BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 www.onsemi.com • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V COLLECTOR • S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC−Q101 1 Qualified and PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2 Compliant EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 3 Collector-Emitter Voltage VCEO Vdc 1 BC846 65 BC847, BC850 45 2 BC848, BC849 30 SOT−23 CASE 318 Collector−Base Voltage VCBO Vdc STYLE 6 BC846 80 BC847, BC850 50 BC848, BC849 30 MARKING DIAGRAM Emitter−Base Voltage VEBO Vdc BC846 6.0 BC847, BC850 6.0 XX M(cid:2) BC848, BC849 5.0 (cid:2) Collector Current − Continuous IC 100 mAdc 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be XX =Device Code assumed, damage may occur and reliability may be affected. M =Date Code* (cid:2) =Pb−Free Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic Symbol Max Unit *Date Code orientation and/or overbar may vary depending upon manufacturing location. Total Device Dissipation FR−5 Board, PD 225 mW (Note 1) TA = 25°C Derate above 25°C 1.8 mW/°C ORDERING INFORMATION Thermal Resistance, R(cid:2)JA 556 °C/W See detailed ordering and shipping information in the package Junction−to−Ambient (Note 1) dimensions section on page 12 of this data sheet. Total Device Dissipation PD 300 mW Alumina Substrate (Note 2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, R(cid:2)JA 417 °C/W Junction−to−Ambient (Note 2) Junction and Storage TJ, Tstg −55 to °C Temperature Range +150 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: January, 2017 − Rev. 17 BC846ALT1/D

BC846ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage BC846A, B V(BR)CEO 65 − − V (IC = 10 mA) BC847A, B, C, BC850B, C 45 − − BC848A, B, C, BC849B, C 30 − − Collector−Emitter Breakdown Voltage BC846A, B V(BR)CES 80 − − V (IC = 10 (cid:3)A, VEB = 0) BC847A, B, C BC850B, C 50 − − BC848A, B, C, BC849B, C 30 − − Collector−Base Breakdown Voltage BC846A, B V(BR)CBO 80 − − V (IC = 10 (cid:3)A) BC847A, B, C, BC850B, C 50 − − BC848A, B, C, BC849B, C 30 − − Emitter−Base Breakdown Voltage BC846A, B V(BR)EBO 6.0 − − V (IE = 1.0 (cid:3)A) BC847A, B, C, BC850B, C 6.0 − − BC848A, B, C, BC849B, C 5.0 − − Collector Cutoff Current (VCB = 30 V) ICBO − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 (cid:3)A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A hFE − 90 − − (IC = 10 (cid:3)A, VCE = 5.0 V) BC846B, BC847B, BC848B − 150 − BC847C, BC848C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220 BC846B, BC847B, BC848B, 200 290 450 BC849B, BC850B BC847C, BC848C, BC849C, BC850C 420 520 800 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) − − 0.25 V Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) − 0.7 − V Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) − − 770 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT 100 − − MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, NF dB VCE = 5.0 Vdc, RS = 2.0 k(cid:4), BC846A,B, BC847A,B,C, BC848A,B,C − − 10 f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C − − 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

BC846ALT1G Series BC846A, BC847A, BC848A, SBC846A 300 300 150°C VCE = 1 V 150°C VCE = 5 V N N AI AI G G T 200 T 200 EN 25°C EN 25°C R R R R U U C C DC 100 −55°C DC 100 −55°C , E , E F F h h 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector Current Current 0.18 R 0.16 IC/IB = 20 150°C E TV) MITE ( 0.14 EG −A 0.12 25°C TORVOLT 0.10 LECON 0.08 OLTI CRA 0.06 −55°C , at)TU 0.04 sA E(S VC 0.02 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage vs. Collector Current 1.0 1.2 V) 0.9 IC/IB = 20 −55°C E ( 1.1 VCE = 5 V RV) AG 1.0 TTEGE (0.8 25°C OLT 0.9 −55°C , BASE−EMIsat)RATION VOLTA000...567 150°C SE−EMITTER V 0000....5687 12550°°CC BE(TU0.4 BA VSA0.3 , E(on) 00..34 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Base Emitter Saturation Voltage vs. Figure 5. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 3

BC846ALT1G Series BC846A, BC847A, BC848A, SBC846A 2.0 1.0 LTAGE (V) 1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N R V IC = 200 mA CIE 1.6 TE 1.2 FFI OR-EMIT 0.8 10IC m =A 20IC m =A IC = 50 mA IC = 100 mA URE COE 2.0 CT AT 2.4 E R V, COLLCE 0.4 , TEMPEVB 2.8 θ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Collector Saturation Region Figure 7. Base−Emitter Temperature Coefficient z) 10 H 400 M T ( 300 7.0 TA = 25°C DUC O 200 R pF) 5.0 Cib H P E ( DT CITANC 3.0 ANDWI 18000 VTAC E= =2 51°0C V CAPA Cob N - B 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.00.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 f(cid:2), T 200.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 8. Capacitances Figure 9. Current−Gain − Bandwidth Product www.onsemi.com 4

BC846ALT1G Series BC846B, SBC846B 600 600 150°C VCE = 1 V 150°C VCE = 5 V 500 500 N N AI AI G G T 400 T 400 N N E 25°C E 25°C R R R 300 R 300 U U C C DC 200 −55°C DC 200 −55°C , E , E F F h 100 h 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector Current Current 0.30 R IC/IB = 20 150°C TEV)0.25 MITE ( EG −A0.20 OROLT 25°C ECTN V0.15 LO OLTI CRA0.10 , at)TU −55°C sA E(S0.05 C V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1.1 1.2 V) RV)1.0 IC/IB = 20 −55°C AGE ( 11..01 VCE = 5 V TTEGE (0.9 25°C OLT 0.9 −55°C , BASE−EMIsat)RATION VOLTA0000....5678 150°C SE−EMITTER V 0000....5687 12550°C°C E(U A VBSAT0.4 , Bn) 0.4 0.3 E(o 0.3 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 13. Base Emitter Saturation Voltage vs. Figure 14. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 5

BC846ALT1G Series BC846B, SBC846B S) 2.0 1.0 TAGE (VOLT 1.6 TA = 25°C °NT (mV/C) 1.4 L 20 mA 50 mA 100 mA 200 mA E R VO 1.2 FFICI 1.8 OR-EMITTE 0.8 10IC m =A ATURE COE 2.2 (cid:2)VB for VBE -55°C to 125°C LLECT 0.4 MPER 2.6 O E V, CCE 0 θ, TVB 3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient 40 T C TA = 25°C DU VCE = 5 V RO 500 TA = 25°C E (pF) 20 Cib WIDTH P 200 C D AN 10 AN CIT - B 100 PA N CA 6.0 GAI 50 C, T- 4.0 Cob EN R R 20 U C (cid:2), T 2.0 f 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6

BC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B 600 600 150°C VCE = 1 V 150°C VCE = 5 V 500 500 N N AI AI G G T 400 T 400 N N E 25°C E 25°C R R R 300 R 300 U U C C DC 200 −55°C DC 200 −55°C , E , E F F h 100 h 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. DC Current Gain vs. Collector Figure 20. DC Current Gain vs. Collector Current Current 0.30 R IC/IB = 20 E MITTE (V) 0.25 150°C −EAG 0.20 OROLT 25°C TV ECN 0.15 LO OLTI CRA 0.10 , at)TU −55°C sA E(S 0.05 C V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 21. Collector Emitter Saturation Voltage vs. Collector Current 1.1 1.2 V) , BASE−EMITTERsat)RATION VOLTAGE (V)000001......567890 IC/IB = 20 1−255505°°°CCC SE−EMITTER VOLTAGE ( 0000101.......5689071 VCE = 5 V 1−255505°°°CCC E(U A BT0.4 B VSA , n) 0.4 0.3 E(o 0.3 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 22. Base Emitter Saturation Voltage vs. Figure 23. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 7

BC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B 2.0 1.0 LTAGE (V) 1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N R V IC = 200 mA CIE 1.6 TE 1.2 FFI OR-EMIT 0.8 10IC m =A 20IC m =A IC = 50 mA IC = 100 mA URE COE 2.0 CT AT 2.4 E R V, COLLCE 0.4 , TEMPEVB 2.8 θ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 24. Collector Saturation Region Figure 25. Base−Emitter Temperature Coefficient z) 10 H 400 M T ( 300 7.0 TA = 25°C DUC O 200 R pF) 5.0 Cib H P E ( DT CITANC 3.0 ANDWI 18000 VTAC E= =2 51°0C V CAPA Cob N - B 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.00.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 f(cid:2), T 200.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 26. Capacitances Figure 27. Current−Gain − Bandwidth Product www.onsemi.com 8

BC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C 1000 1000 900 150°C VCE = 1 V 900 150°C VCE = 5 V N 800 N 800 AI AI G 700 G 700 T T EN 600 25°C EN 600 25°C R R R 500 R 500 U U C 400 C 400 DC 300 −55°C DC 300 −55°C , E , E hF 200 hF 200 100 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector Current Current 0.30 R IC/IB = 20 E MITTE (V) 0.25 150°C EG −A 0.20 OROLT 25°C TV ECN 0.15 LO OLTI CRA 0.10 , at)TU −55°C sA E(S 0.05 C V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 30. Collector Emitter Saturation Voltage vs. Collector Current 1.1 1.2 V) , BASE−EMITTERsat)RATION VOLTAGE (V)100000......056789 IC/IB = 20 −1255550°°°CCC SE−EMITTER VOLTAGE ( 0000101.......5689071 VCE = 5 V 1−255505°°°CCC E(U A BT0.4 B VSA , n) 0.4 0.3 E(o 0.3 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 31. Base Emitter Saturation Voltage vs. Figure 32. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 9

BC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C 2.0 1.0 LTAGE (V) 1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N R V IC = 200 mA CIE 1.6 TE 1.2 FFI OR-EMIT 0.8 10IC m =A 20IC m =A IC = 50 mA IC = 100 mA URE COE 2.0 CT AT 2.4 E R V, COLLCE 0.4 , TEMPEVB 2.8 θ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature Coefficient z) 10 H 400 M T ( 300 7.0 TA = 25°C DUC O 200 R pF) 5.0 Cib H P E ( DT CITANC 3.0 ANDWI 18000 VTAC E= =2 51°0C V CAPA Cob N - B 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.00.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 f(cid:2), T 200.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 35. Capacitances Figure 36. Current−Gain − Bandwidth Product www.onsemi.com 10

BC846ALT1G Series 1 1 A) A) T ( 100 mS 10 mS T ( 100 mS 10 mS EN 1 mS EN 1 mS RR 0.1 1 S RR 0.1 1 S U U C C R R O O T Thermal Limit T Thermal Limit C C E 0.01 E 0.01 L L L L O O C C , C , C I I 0.001 0.001 1 10 100 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 37. Safe Operating Area for Figure 38. Safe Operating Area for BC846A, BC846B BC847A, BC847B, BC847C, BC850B, BC850C 1 A) 100 mS 10 mS T ( N 1 mS E R 0.1 1 S R U C R O CT Thermal Limit E 0.01 L L O C , C I 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C www.onsemi.com 11

BC846ALT1G Series ORDERING INFORMATION Device Marking Package Shipping† BC846ALT1G 3,000 / Tape & Reel SBC846ALT1G* 1A BC846ALT3G 10,000 / Tape & Reel BC846BLT1G 3,000 / Tape & Reel SBC846BLT1G* 1B BC846BLT3G 10,000 / Tape & Reel SBC846BLT3G* BC847ALT1G 3,000 / Tape & Reel 1E BC847ALT3G 10,000 / Tape & Reel BC847BLT1G 3,000 / Tape & Reel SBC847BLT1G* 1F BC847BLT3G 10,000 / Tape & Reel NSVBC847BLT3G* BC847CLT1G 3,000 / Tape & Reel SBC847CLT1G* 1G BC847CLT3G 10,000 / Tape & Reel SOT−23 BC848ALT1G 1J (Pb−Free) 3,000 / Tape & Reel BC848BLT1G 3,000 / Tape & Reel SBC848BLT1G* 1K BC848BLT3G 10,000 / Tape & Reel BC848CLT1G 3,000 / Tape & Reel NSVBC848CLT1G* 1L BC848CLT3G 10,000 / Tape & Reel BC849BLT1G 3,000 / Tape & Reel NSVBC849BLT1G* 2B BC849BLT3G 10,000 / Tape & Reel BC849CLT1G 3,000 / Tape & Reel 2C BC849CLT3G 10,000 / Tape & Reel BC850BLT1G 2F NSVBC850BLT1G* 3,000 / Tape & Reel BC850CLT1G 2G NSVBC850CLT1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 12

BC846ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BC846ALT1/D 13

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BC846ALT1G BC846ALT3G BC846BLT1G BC846BLT3G BC847ALT1G BC847BLT1G BC847BLT3G BC847CLT1G BC847CLT3G BC848ALT1G BC848BLT1G BC848BLT3G BC848CLT1G BC849BLT1G BC849CLT1G BC850BLT1G BC850CLT1G SBC847BLT1G SBC846BLT3G SBC847CLT1G NSVBC847BLT3G