BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B (cid:122)Features (cid:122)External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW 2) Complements the BC858B / BC858BW. 2.0±0.2 1.3±0.1 0.9±0.1 0.650.65 0.2 0.7±0.1 (1) (2) (3) ±0.11.25 ±2.10.1 0~0.1 ROHM : UMT3 All ter0m.3in+−a00ls.1 have same di0m.1e5n±s0io.0n5s 0.1~0.4 ((12)) EBmasiteter EIAJ : SC-70 (3) Collector BC848B, BC848C 21..99±±00..22 0.95+−00..21 0.950.95 0.45±0.1 (1) (2) (3) +0.21.3−0.1 ±2.40.2 00~.20M.1in. All term0.i4na+−l00s.. 10h5ave same d0im.1e5n−+s00io..01n6s ((12)) EBmasiteter ROHM : SST3 (3) Collector (cid:122)Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 0.1 A 0.2 W Collector power BC848BW dissipation BC848B PC 00..325 WW ∗ Junction temperature Tj 150 °C Storage temperature Tstg −65~+150 °C ∗ When mounted on a 7×5×0.6mm ceramic board. (cid:122)Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA − − 100 nA VCB=30V Collector cutoff current ICBO − − 5 µA VCB=30V, Ta=150°C − − 0.25 IC/IB=10mA/0.5mA Collector-emitter saturation voltage VCE(sat) − − 0.6 V IC/IB=100mA/5mA Base-emitter saturation voltage VBE(on) 0.58 − 0.77 V VCE/IC=5V/10mA DC current transfer ratio hFE 200 − 450 − VCE/IC=5V/2mA Transition frequency fT − 200 − MHz VCE=5V, IE=−20mA, f=100MHz Collector output capacitance Cob − 3 − pF VCB=10V, IE=0, f=1MHz Collector output capacitance Cib − 8 − pF VEB=0.5V, IE=0, f=1MHz (SPEC-C22) Rev.A 1/5

BC848BW / BC848B Transistors (cid:122)Packaging specifications Part No. BC848BW BC848B Packaging type UMT3 SST3 Marking G1K G1K Code T106 T116 Basic ordering unit (pieces) 3000 3000 (cid:122)Electrical characteristic curves 100 Ta=25°C 1.2 10.0 35 NT (mA)80 001...860 NT (mA)8.0 2350 URRE60 0.4 URRE6.0 20 C C CTOR 40 0.2 CTOR 4.0 15 COLLE20 0.1 COLLE2.0 10 −IC I-C 5 00 1.0 IB=0mA 2.0 00 1.0 IB=0µA Ta=25°C2.0 VCE−COLLECTOR-EMITTER VOLTAGE (V) VCE-COLLECTOR-EMITTER VOLTAGE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output characteristics ( ) characteristics ( ) 1000 Ta=25°C N GAI VCE=10V T N RRE100 1V 5V U C C D h-FE 10 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs. collector current ( ) 1000 VCE=5V AIN Ta=125°C G T Ta=25°C EN Ta=−55°C RR100 U C C D h-FE 10 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.4 DC current gain vs. collector current ( ) Rev.A 2/5

BC848BW / BC848B Transistors 1000 Ta=25°C VCE=5V f=1kHz N AI G T N E RR100 U C C A h-FE 10 0.01 0.1 1 10 100 IC-COLLECTOR CURRENT (mA) Fig.5 AC current gain vs. collector current VCOLLECTOR EMITTER SATURATION VOLTAGE (V)CE(SAT) 00000.....F011100886240ig.1.6 CIvC-ooCllOtleaLcgL1tEe.o0C rvT-sOe.Rm c ioCttlUeleRrc R1st0EoaNrtTu c r(TIumCaa/rIAt=Bri=2)oe15nn0°1C t00 VBASE EMITTER SATURATION VOLTAGE (V)BE(SAT)01110F.....828640i0g.1.7 BvICoa-ClstOaeLg-Le1eE.m 0CvTistOt.e Rcr o CsllaUeRtcuR1tro0EarNt iTco u(TInmCra/IrA=Be=2)n150°t1C00 VBASE EMITTER VOLTAGE (V)FBE(ON)i01110g.....828640.08.1 cGhraIoCr-uCanOcdLteeL1Erd.0iCs eTtiOmcRsi t tCeUrR pR1r0EoNpTa (gTVmCaaAE=t=)2i5o5Vn°1C00 1000 Ta=25°C 1000 Ta=25°C 1000 40V Ta=25°C IC/IB=10 IC/IB=10 IC=101B1=101B2 3V t-TURN ON TIME (ns)on100 t-RISE TIME (ns)r100 VCC=40V t-STORAGE TIME (ns)S100 VCE=15V 10 10 10 1.0 10 100 1.0 10 100 1.0 10 100 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) Fig.9 Turn-on time vs. collector Fig.10 Rise time vs. collector Fig.11 Storage time vs. collector current current current Rev.A 3/5

BC848BW / BC848B Transistors 1000 TVICCa=C=1=204510B°V1C=101B2 100 Tf=a1=M2H5°zC GE (V)50100MHz200MHz300MHz 400MHz Ta=25°C A T t-FALL TIME (ns)f100 CAPACITANCE (pF)10 Cib Cob ECTOR-EMITTER VOL5.0 432100000000MMMMHHHHzzzz L L O C 10 1 V CE0.5 1.0 10 100 0.5 1 10 50 0.5 10 100 500 IC-COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (V) IC-COLLECTOR CURRENT (mA) Fig.12 Fall time vs. collector Fig.13 Input/output capacitance Fig.14 Gain bandwidth product current vs. voltage DUCT (MHz)1000 TVaCE==255V°C D TO 1mA100 hoe TVf=aC2E=7=2065HV°zC URRENT (A) 101nn VCB=30V CURRENT GAIN-BANDWIDTH PRO10100 h PARAMETER NORMALIZE01.011 hrhehofeehie hiehhhhIhhCfrifroe=eeeee1====m7247.8.A8.505k×µΩ1S0−5 I-COLLECTOR CUTOFF CCBO1001.0011PPPP 0.51.0 10 100 500 0.1 1 10 100 0 25 50 75 100 125 150 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) TA-AMBIENT TEMPERATURE (°C) Fig.15 Gain bandwidth product Fig.16 h parameter Fig.17 Collector cutoff current vs. collector current vs. collector current 12 Ta=25°C 100k Ta=25°C E (dB)108 RVICCS=E=1=10500VkµΩA ΩANCE ()10k NF=1dB3dB5dB8dB12dB Vf=C1E0=H5Vz R T U S G SI NOISE FI 64 URCE RE 1k NF 2 R-SOS 0 100 10 100 1k 10k 100k 0.01 0.1 1 10 f-FREQUENCY (Hz) IC-COLLECTOR CURRENT (mA) Fig.18 Noise vs. collector current Fig.19 Noise characteristics ( ) Rev.A 4/5

BC848BW / BC848B Transistors 100k Ta=25°C 100k 100k ΩRESISTANCE ()10k NF=1dB3dB5dB8dB12dB Vf=C3E0=H5Vz ΩRESISTANCE ()10k fTV=aC1E=k=2H55zV°C NF=1dB3dB5dB8dB 12dB ΩRESISTANCE ()10k TVf=aC1E=0=2k55HV°zC NF=1dB 3dB 5dB8dB CE CE CE UR 1k UR 1k UR 1k O O O R-SS R-SS R-SS 100 100 100 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) IC-COLLECTOR CURRENT (mA) Fig.20 Noise characteristics ( ) Fig.21 Noise characteristics ( ) Fig.22 Noise characteristics ( ) Rev.A 5/5

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1