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  • 型号: BC847T,115
  • 制造商: NXP Semiconductors
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BC847T,115产品简介:

ICGOO电子元器件商城为您提供BC847T,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BC847T,115价格参考。NXP SemiconductorsBC847T,115封装/规格:晶体管 - 双极 (BJT) - 单, Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150mW Surface Mount SC-75。您可以下载BC847T,115参考资料、Datasheet数据手册功能说明书,资料中有BC847T,115 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANSISTOR NPN 45V 100MA SOT416两极晶体管 - BJT TRANS GP TAPE-7

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,NXP Semiconductors BC847T,115-

数据手册

点击此处下载产品Datasheet

产品型号

BC847T,115

PCN封装

点击此处下载产品Datasheet

PCN设计/规格

点击此处下载产品Datasheet点击此处下载产品Datasheet

不同 Ib、Ic时的 Vce饱和值(最大值)

400mV @ 5mA,100mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

110 @ 2mA,5V

产品种类

两极晶体管 - BJT

供应商器件封装

SC-75

其它名称

568-8001-2
934054817115
BC847T T/R
BC847T T/R-ND
BC847T,115-ND
BC847T115

功率-最大值

150mW

包装

带卷 (TR)

发射极-基极电压VEBO

6 V

商标

NXP Semiconductors

增益带宽产品fT

100 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SC-75,SOT-416

封装/箱体

SOT-416

工厂包装数量

3000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

150 mW

最大工作温度

+ 150 C

最大直流电集电极电流

0.1 A

最小工作温度

- 65 C

标准包装

3,000

特色产品

http://www.digikey.com/cn/zh/ph/NXP/I2C.html

电压-集射极击穿(最大值)

45V

电流-集电极(Ic)(最大值)

100mA

电流-集电极截止(最大值)

-

直流电流增益hFE最大值

110 at 2 mA at 5 V

直流集电极/BaseGainhfeMin

110 at 2 mA at 5 V

配置

Single

集电极—发射极最大电压VCEO

45 V

集电极—基极电压VCBO

50 V

零件号别名

BC847T T/R

频率-跃迁

100MHz

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PDF Datasheet 数据手册内容提取

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 9 — 23 September 2014 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device(SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847C BC857C BC847W SOT323 SC-70 - BC857W BC847AW BC857AW BC847BW BC857BW BC847CW BC857CW BC847T SOT416 SC-75 - BC857T BC847AT BC857AT BC847BT BC857BT BC847CT BC857CT BC847AM SOT883 SC-101 - BC857AM BC847BM BC857BM BC847CM BC857CM [1] Valid for all available selection groups. 1.2 Features and benefits  General-purpose transistors  SMD plastic packages  Three different gain selections  AEC-Q101 qualified 1.3 Applications  General-purpose switching and amplification

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 45 V CEO I collector current - - 100 mA C h DCcurrent gain V =5V; I =2mA [1] 110 - 800 FE CE C h group A 110 180 220 FE h group B 200 290 450 FE h group C 420 520 800 FE [1] T = 25 °C unless otherwise specified amb 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT23, SOT323, SOT416 1 base 3 3 2 emitter 3 collector 1 2 1 2 sym021 006aaa144 SOT883 1 base 2 emitter 1 3 3 3 collector 2 1 Transparent top view 2 sym021 BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 2 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BC847 - plastic surface-mounted package; 3leads SOT23 BC847A BC847B BC847C BC847W SC-70 plastic surface-mounted package; 3leads SOT323 BC847AW BC847BW BC847CW BC847T SC-75 plastic surface-mounted package; 3leads SOT416 BC847AT BC847BT BC847CT BC847AM SC-101 leadless ultra small plastic package; 3solder lands; SOT883 body 1.00.60.5 mm BC847BM BC847CM [1] Valid for all available selection groups. 4. Marking Table 5. Marking codes Type number Marking code[1] Type number Marking code[1] BC847 1H* BC847T 1N BC847A 1E* BC847AT 1E BC847B 1F* BC847BT 1F BC847C 1G* BC847CT 1G BC847W 1H* BC847AM D4 BC847AW 1E* BC847BM D5 BC847BW 1F* BC847CM D6 BC847CW 1G* [1] * = placeholder for manufacturing site code BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 3 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 45 V CEO V emitter-base voltage open collector - 6 V EBO I collector current - 100 mA C I peak collector current single pulse; - 200 mA CM t 1ms p I peak base current single pulse; - 100 mA BM t 1ms p P total power dissipation T 25C [1] tot amb SOT23 - 250 mW SOT323 - 200 mW SOT416 - 150 mW SOT883 [2] - 250 mW T junction temperature - 150 C j T ambient temperature 65 +150 C amb T storage temperature 65 +150 C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB with 60m copper strip line, standard footprint. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1] th(j-a) junction to ambient SOT23 - - 500 K/W SOT323 - - 625 K/W SOT416 - - 833 K/W SOT883 [2] - - 500 K/W [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4PCB with 60m copper strip line, standard footprint. BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 4 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 7. Characteristics Table 8. Characteristics T =25C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit I collector-base cut-off V =30V; I =0A - - 15 nA CBO CB E current V =30V; I =0A; - - 5 A CB E T =150C j I emitter-base cut-off V =5V; I =0A - - 100 nA EBO EB C current h DCcurrent gain V =5V; I =10A FE CE C h group A - 170 - FE h group B - 280 - FE h group C - 420 - FE DCcurrent gain V =5V; I =2mA 110 - 800 CE C h group A 110 180 220 FE h group B 200 290 450 FE h group C 420 520 800 FE V collector-emitter I =10mA; I =0.5mA - 90 200 mV CEsat C B saturation voltage I =100mA; I =5mA [1] - 200 400 mV C B V base-emitter I =10mA; I =0.5mA [2] - 700 - mV BEsat C B saturation voltage I =100mA; I =5mA [2] - 900 - mV C B V base-emitter voltage I =2mA; V =5V [2] 580 660 700 mV BE C CE I =10mA; V =5V - - 770 mV C CE f transition frequency V =5V; I =10mA; 100 - - MHz T CE C f=100MHz C collector capacitance V =10V; I =i =0A; - - 1.5 pF c CB E e f=1MHz C emitter capacitance V =0.5V; I =i =0A; - 11 - pF e EB C c f=1MHz NF noise figure I =200A; V =5V; - 2 10 dB C CE R =2k; f=1kHz; S B=200Hz [1] Pulse test: tp300s; =0.02. [2] V decreases by approximately 2mV/K with increasing temperature. BE BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 5 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors mgt723 mgt724 400 1200 VBE hFE (mV) 1000 (1) 300 (1) 800 (2) 200 (2) 600 (3) 400 (3) 100 200 0 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) V =5V V =5V CE CE (1) Tamb=150C (1) Tamb=55C (2) Tamb=25C (2) Tamb=25C (3) Tamb=55C (3) Tamb=150C Fig 1. GroupA: DCcurrent gain as a function of Fig 2. GroupA: Base-emitter voltage as a function of collector current; typical values collector current; typical values 103 mgt725 1200 mgt726 VBEsat VCEsat (mV) (mV) 1000 (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) I /I =20 I /I =10 C B C B (1) Tamb=150C (1) Tamb=55C (2) Tamb=25C (2) Tamb=25C (3) Tamb=55C (3) Tamb=150C Fig 3. GroupA: Collector-emitter saturation voltage Fig 4. GroupA: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 6 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors mgt727 mgt728 600 1200 hFE VBE (mV) 500 1000 (1) 400 800 (1) (2) 300 600 (2) 200 400 (3) (3) 100 200 0 0 10-1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) V =5V V =5V CE CE (1) Tamb=150C (1) Tamb=55C (2) Tamb=25C (2) Tamb=25C (3) Tamb=55C (3) Tamb=150C Fig 5. GroupB: DCcurrent gain as a function of Fig 6. GroupB: Base-emitter voltage as a function of collector current; typical values collector current; typical values 104 mgt729 1200 mgt730 VBEsat VCEsat (mV) (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) (3) (2) 200 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) I /I =20 I /I =10 C B C B (1) Tamb=150C (1) Tamb=55C (2) Tamb=25C (2) Tamb=25C (3) Tamb=55C (3) Tamb=150C Fig 7. GroupB: Collector-emitter saturation voltage Fig 8. GroupB: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 7 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors mgt731 mgt732 1200 1200 hFE VBE (mV) 1000 1000 (1) (1) 800 800 (2) (2) 600 600 400 400 (3) (3) 200 200 0 0 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) V =5V V =5V CE CE (1) Tamb=150C (1) Tamb=55C (2) Tamb=25C (2) Tamb=25C (3) Tamb=55C (3) Tamb=150C Fig 9. GroupC: DCcurrent gain as a function of Fig 10. GroupC: Base-emitter voltage as a function of collector current; typical values collector current; typical values 104 mgt733 1200 mgt734 VBEsat VCEsat (mV) (mV) 1000 (1) 103 800 (2) 600 (3) 102 400 (1) 200 (3) (2) 10 0 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) I /I =20 I /I =10 C B C B (1) Tamb=150C (1) Tamb=55C (2) Tamb=25C (2) Tamb=25C (3) Tamb=55C (3) Tamb=150C Fig 11. GroupC: Collector-emitter saturation voltage Fig 12. GroupC: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 8 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 1.1 2.8 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 0.48 0.15 0.38 0.09 1.9 Dimensions in mm 04-11-04 Fig 13. Package outline SOT23(TO-236AB) 2.2 1.1 1.8 0.8 3 0.45 0.15 2.2 1.35 2.0 1.15 1 2 0.4 0.25 0.3 0.10 1.3 Dimensions in mm 04-11-04 Fig 14. Package outline SOT323(SC-70) BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 9 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 1.8 0.95 1.4 0.60 3 0.45 0.15 1.75 0.9 1.45 0.7 1 2 0.30 0.25 0.15 0.10 1 Dimensions in mm 04-11-04 Fig 15. Package outline SOT416(SC-75) 0.62 0.55 0.55 0.50 0.47 0.46 0.30 3 0.22 1.02 0.65 0.95 0.30 0.22 2 1 0.20 0.12 0.35 Dimensions in mm 03-04-03 Fig 16. Package outline SOT883(SC-101) BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 10 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3×) (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 17. Reflow soldering footprint SOT23(TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 18. Wave soldering footprint SOT23(TO-236AB) BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 11 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 2.65 1.85 1.325 solder lands 2 solder resist 2.35 (03.×6) 3 1.3 solder paste 0.5 occupied area 1 (3×) Dimensions in mm 0.55 (3×) sot323_fr Fig 19. Reflow soldering footprint SOT323(SC-70) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 3.65 2.1 1.8 Dimensions in mm preferred transport 09 (2×) direction during soldering sot323_fw Fig 20. Wave soldering footprint SOT323(SC-70) BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 12 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 2.2 1.7 solder lands solder resist 0.85 1 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Fig 21. Reflow soldering footprint SOT416(SC-75) 1.3 0.7 R0.05 (12×) solder lands solder resist 0.9 0.6 0.7 0.25 solder paste (2×) occupied area 0.3 (2×) 0.3 Dimensions in mm 0.4 (2×) 0.4 sot883_fr Fig 22. Reflow soldering footprint SOT883(SC-101) BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 13 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BC847_SERv.9 20140923 Product data sheet - BC847_SERv.8 Modifications: • Section 1.2 “Features and benefits”: updated • Section 5 “Limiting values”: updated • Figure5: corrected • Section 8 “Test information”: added • Section 12 “Legal information”: updated BC847_SERv.8 20120820 Product data sheet - BC847_BC547_SERv.7 BC847_BC547_SERv.7 20081210 Product data sheet - BC847_BC547_SERv.6 BC847_BC547_SERv.6 20050519 Product data sheet - - BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 14 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, Draft — The document is a draft version only. The content is still under authorized or warranted to be suitable for use in life support, life-critical or internal review and subject to formal approval, which may result in safety-critical systems or equipment, nor in applications where failure or modifications or additions. NXP Semiconductors does not give any malfunction of an NXP Semiconductors product can reasonably be expected representations or warranties as to the accuracy or completeness of to result in personal injury, death or severe property or environmental information included herein and shall have no liability for the consequences of damage. NXP Semiconductors and its suppliers accept no liability for use of such information. inclusion and/or use of NXP Semiconductors products in such equipment or Short data sheet — A short data sheet is an extract from a full data sheet applications and therefore such inclusion and/or use is at the customer's own with the same product type number(s) and title. A short data sheet is intended risk. for quick reference only and should not be relied upon to contain detailed and Applications — Applications that are described herein for any of these full information. For detailed and full information see the relevant full data products are for illustrative purposes only. NXP Semiconductors makes no sheet, which is available on request via the local NXP Semiconductors sales representation or warranty that such applications will be suitable for the office. In case of any inconsistency or conflict with the short data sheet, the specified use without further testing or modification. full data sheet shall prevail. Customers are responsible for the design and operation of their applications Product specification — The information and data provided in a Product and products using NXP Semiconductors products, and NXP Semiconductors data sheet shall define the specification of the product as agreed between accepts no liability for any assistance with applications or customer product NXP Semiconductors and its customer, unless NXP Semiconductors and design. It is customer’s sole responsibility to determine whether the NXP customer have explicitly agreed otherwise in writing. In no event however, Semiconductors product is suitable and fit for the customer’s applications and shall an agreement be valid in which the NXP Semiconductors product is products planned, as well as for the planned application and use of deemed to offer functions and qualities beyond those described in the customer’s third party customer(s). Customers should provide appropriate Product data sheet. design and operating safeguards to minimize the risks associated with their applications and products. 12.3 Disclaimers NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s Limited warranty and liability — Information in this document is believed to third party customer(s). Customer is responsible for doing all necessary be accurate and reliable. However, NXP Semiconductors does not give any testing for the customer’s applications and products using NXP representations or warranties, expressed or implied, as to the accuracy or Semiconductors products in order to avoid a default of the applications and completeness of such information and shall have no liability for the the products or of the application or use by customer’s third party consequences of use of such information. NXP Semiconductors takes no customer(s). NXP does not accept any liability in this respect. responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) will cause permanent In no event shall NXP Semiconductors be liable for any indirect, incidental, damage to the device. Limiting values are stress ratings only and (proper) punitive, special or consequential damages (including - without limitation - lost operation of the device at these or any other conditions above those given in profits, lost savings, business interruption, costs related to the removal or the Recommended operating conditions section (if present) or the replacement of any products or rework charges) whether or not such Characteristics sections of this document is not warranted. Constant or damages are based on tort (including negligence), warranty, breach of repeated exposure to limiting values will permanently and irreversibly affect contract or any other legal theory. the quality and reliability of the device. Notwithstanding any damages that customer might incur for any reason Terms and conditions of commercial sale — NXP Semiconductors whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards products are sold subject to the general terms and conditions of commercial customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual Right to make changes — NXP Semiconductors reserves the right to make agreement is concluded only the terms and conditions of the respective changes to information published in this document, including without agreement shall apply. NXP Semiconductors hereby expressly objects to limitation specifications and product descriptions, at any time and without applying the customer’s general terms and conditions with regard to the notice. This document supersedes and replaces all information supplied prior purchase of NXP Semiconductors products by customer. to the publication hereof. BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 15 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors No offer to sell or license — Nothing in this document may be interpreted or Translations — A non-English (translated) version of a document is for construed as an offer to sell products that is open for acceptance or the grant, reference only. The English version shall prevail in case of any discrepancy conveyance or implication of any license under any copyrights, patents or between the translated and English versions. other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein 12.4 Trademarks may be subject to export control regulations. Export might require a prior authorization from competent authorities. Notice: All referenced brands, product names, service names and trademarks Quick reference data — The Quick reference data is an extract of the are the property of their respective owners. product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 9 — 23 September 2014 16 of 17

BC847 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13 Contact information. . . . . . . . . . . . . . . . . . . . . 16 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 September 2014 Document identifier: BC847_SER