BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. COLLECTOR Features • 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 1 Qualified and PPAP Capable BASE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO V 3 BC846 65 SC−70/SOT−323 BC847 45 CASE 419 BC848 30 1 STYLE 3 2 Collector-Base Voltage VCBO V BC846 80 BC847 50 BC848 30 MARKING DIAGRAM Emitter-Base Voltage VEBO V BC846 6.0 BC847 6.0 BC848 5.0 XX M(cid:2) Collector Current − Continuous IC 100 mAdc (cid:2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XX = Specific Device Code M = Month Code THERMAL CHARACTERISTICS (cid:2) = Pb−Free Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C PD 200 mW Thermal Resistance, ORDERING INFORMATION Junction−to−Ambient R(cid:2)JA 620 °C/W See detailed ordering, marking and shipping information in the Junction and Storage Temperature TJ, Tstg −55 to °C package dimensions section on page 12 of this data sheet. +150 1. FR−5 = 1.0 x 0.75 x 0.062 in. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2015 − Rev. 12 BC846AWT1/D

BC846, BC847, BC848 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage BC846 Series V(BR)CEO 65 − − V (IC = 10 mA) BC847 Series 45 − − BC848 Series 30 − − Collector−Emitter Breakdown Voltage BC846 Series V(BR)CES 80 − − V (IC = 10 (cid:3)A, VEB = 0) BC847 Series 50 − − BC848 Series 30 − − Collector−Base Breakdown Voltage BC846 Series V(BR)CBO 80 − − V (IC = 10 (cid:3)A) BC847 Series 50 − − BC848 Series 30 − − Emitter−Base Breakdown Voltage BC846 Series V(BR)EBO 6.0 − − V (IE = 1.0 (cid:3)A) BC847 Series 6.0 − − BC848 Series 5.0 − − Collector Cutoff Current (VCB = 30 V) ICBO − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 (cid:3)A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A hFE − 90 − − (IC = 10 (cid:3)A, VCE = 5.0 V) BC846B, BC847B, BC848B − 150 − BC847C, BC848C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220 BC846B, BC847B, BC848B 200 290 450 BC847C, BC848C 420 520 800 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) − − 0.25 V Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) − 0.7 − V Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) − − 770 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT 100 − − MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k(cid:4), f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB www.onsemi.com 2

BC846, BC847, BC848 BC846A, BC847A, BC848A 300 300 150°C VCE = 1 V 150°C VCE = 5 V N N AI AI G G T 200 T 200 EN 25°C EN 25°C R R R R U U C C DC 100 −55°C DC 100 −55°C , E , E F F h h 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector Current Current 0.18 R 0.16 IC/IB = 20 150°C E TV) MITE ( 0.14 EG −A 0.12 25°C TORVOLT 0.10 LECON 0.08 OLTI CRA 0.06 −55°C , at)TU 0.04 sA E(S VC 0.02 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Collector Emitter Saturation Voltage vs. Collector Current 1.0 1.2 V) 0.9 IC/IB = 20 −55°C E ( 1.1 VCE = 5 V RV) AG 1.0 TTEGE (0.8 25°C OLT 0.9 −55°C , BASE−EMIsat)RATION VOLTA000...567 150°C SE−EMITTER V 0000....5687 12550°°CC BE(TU0.4 BA VSA0.3 , E(on) 00..34 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Base Emitter Saturation Voltage vs. Figure 5. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 3

BC846, BC847, BC848 BC846A, BC847A, BC848A 2.0 1.0 LTAGE (V) 1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N R V IC = 200 mA CIE 1.6 TE 1.2 FFI OR-EMIT 0.8 10IC m =A 20IC m =A IC = 50 mA IC = 100 mA URE COE 2.0 CT AT 2.4 E R V, COLLCE 0.4 , TEMPEVB 2.8 θ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Collector Saturation Region Figure 7. Base−Emitter Temperature Coefficient z) 10 H 400 M T ( 300 7.0 TA = 25°C DUC O 200 R pF) 5.0 Cib H P E ( DT CITANC 3.0 ANDWI 18000 VTAC E= =2 51°0C V CAPA Cob N - B 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.00.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 f(cid:2), T 200.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 8. Capacitances Figure 9. Current−Gain − Bandwidth Product www.onsemi.com 4

BC846, BC847, BC848 BC846B 600 600 150°C VCE = 1 V 150°C VCE = 5 V 500 500 N N AI AI G G T 400 25°C T 400 N N E E 25°C R R R 300 R 300 U U C C DC 200 −55°C DC 200 −55°C , E , E F F h 100 h 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector Current Current 0.30 R IC/IB = 20 150°C TEV)0.25 MITE ( EG −A0.20 OROLT 25°C ECTN V0.15 LO OLTI CRA0.10 , at)TU −55°C sA E(S0.05 C V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1.1 1.2 V) RV)1.0 IC/IB = 20 −55°C AGE ( 11..01 VCE = 5 V TTEGE (0.9 25°C OLT 0.9 −55°C , BASE−EMIsat)RATION VOLTA0000....5678 150°C SE−EMITTER V 0000....5687 12550°C°C E(U A VBSAT0.4 , Bn) 0.4 0.3 E(o 0.3 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 13. Base Emitter Saturation Voltage vs. Figure 14. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 5

BC846, BC847, BC848 BC846B S) 2.0 1.0 TAGE (VOLT 1.6 TA = 25°C °NT (mV/C) 1.4 L 20 mA 50 mA 100 mA 200 mA E R VO 1.2 FFICI 1.8 OR-EMITTE 0.8 10IC m =A ATURE COE 2.2 (cid:2)VB for VBE -55°C to 125°C LLECT 0.4 MPER 2.6 O E V, CCE 0 θ, TVB 3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient 40 T C TA = 25°C DU VCE = 5 V RO 500 TA = 25°C E (pF) 20 Cib WIDTH P 200 C D AN 10 AN CIT - B 100 PA N CA 6.0 GAI 50 C, T- 4.0 Cob EN R R 20 U C (cid:2), T 2.0 f 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6

BC846, BC847, BC848 BC847B, BC848B 600 600 150°C VCE = 1 V 150°C VCE = 5 V 500 500 N N AI AI G G T 400 T 400 N N E 25°C E 25°C R R R 300 R 300 U U C C DC 200 −55°C DC 200 −55°C , E , E F F h 100 h 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. DC Current Gain vs. Collector Figure 20. DC Current Gain vs. Collector Current Current 0.30 R IC/IB = 20 E MITTE (V) 0.25 150°C EG −A 0.20 OROLT 25°C TV ECN 0.15 LO OLTI CRA 0.10 , at)TU −55°C sA E(S 0.05 C V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 21. Collector Emitter Saturation Voltage vs. Collector Current 1.1 1.2 V) , BASE−EMITTERsat)RATION VOLTAGE (V)010000......905678 IC/IB = 20 1−255505°°°CCC SE−EMITTER VOLTAGE ( 0000101.......5689071 VCE = 5 V 1−255505°°°CCC E(U A BT0.4 B VSA , n) 0.4 0.3 E(o 0.3 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 22. Base Emitter Saturation Voltage vs. Figure 23. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 7

BC846, BC847, BC848 BC847B, BC848B 2.0 1.0 LTAGE (V) 1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N R V IC = 200 mA CIE 1.6 TE 1.2 FFI OR-EMIT 0.8 10IC m =A 20IC m =A IC = 50 mA IC = 100 mA URE COE 2.0 CT AT 2.4 E R V, COLLCE 0.4 , TEMPEVB 2.8 θ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 24. Collector Saturation Region Figure 25. Base−Emitter Temperature Coefficient z) 10 H 400 M T ( 300 7.0 TA = 25°C DUC O 200 R pF) 5.0 Cib H P E ( DT CITANC 3.0 ANDWI 18000 VTAC E= =2 51°0C V CAPA Cob N - B 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.00.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 f(cid:2), T 200.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 26. Capacitances Figure 27. Current−Gain − Bandwidth Product www.onsemi.com 8

BC846, BC847, BC848 BC847C, BC848C 1000 1000 150°C 900 VCE = 1 V 900 150°C VCE = 5 V N 800 N 800 AI AI G 700 G 700 T 25°C T EN 600 EN 600 25°C R R R 500 R 500 U U DC C 340000 −55°C DC C 340000 −55°C , E , E hF 200 hF 200 100 100 0 0 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector Current Current 0.30 R IC/IB = 20 E MITTE (V) 0.25 150°C EG −A 0.20 OROLT 25°C TV ECN 0.15 LO OLTI CRA 0.10 , at)TU −55°C sA E(S 0.05 C V 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 30. Collector Emitter Saturation Voltage vs. Collector Current 1.1 1.2 V) , BASE−EMITTERsat)RATION VOLTAGE (V)010000......905678 IC/IB = 20 −1255550°°°CCC SE−EMITTER VOLTAGE ( 0000101.......5689071 VCE = 5 V 1−255505°°°CCC E(U A BT0.4 B VSA , n) 0.4 0.3 E(o 0.3 B 0.2 V 0.2 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 31. Base Emitter Saturation Voltage vs. Figure 32. Base Emitter Voltage vs. Collector Collector Current Current www.onsemi.com 9

BC846, BC847, BC848 BC847C, BC848C 2.0 1.0 LTAGE (V) 1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N R V IC = 200 mA CIE 1.6 TE 1.2 FFI OR-EMIT 0.8 10IC m =A 20IC m =A IC = 50 mA IC = 100 mA URE COE 2.0 CT AT 2.4 E R V, COLLCE 0.4 , TEMPEVB 2.8 θ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature Coefficient z) 10 H 400 M T ( 300 7.0 TA = 25°C DUC O 200 R pF) 5.0 Cib H P E ( DT CITANC 3.0 ANDWI 18000 VTAC E= =2 51°0C V CAPA Cob N - B 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.00.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 f(cid:2), T 200.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 35. Capacitances Figure 36. Current−Gain − Bandwidth Product www.onsemi.com 10

BC846, BC847, BC848 1 1 A) A) T ( 100 mS 10 mS T ( 100 mS 10 mS EN 1 mS EN 1 mS RR 0.1 1 S RR 0.1 1 S U U C C R R O O T Thermal Limit T Thermal Limit C C E 0.01 E 0.01 L L L L O O C C , C , C I I 0.001 0.001 1 10 100 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 37. Safe Operating Area for Figure 38. Safe Operating Area for BC846A, BC846B BC847A, BC847B, BC847C 1 A) 100 mS 10 mS T ( N 1 mS E R 0.1 1 S R U C R O CT Thermal Limit E 0.01 L L O C , C I 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Safe Operating Area for BC848A, BC848B, BC848C www.onsemi.com 11

BC846, BC847, BC848 DEVICE ORDERING AND SPECIFIC MARKING INFORMATION Device Specific Marking Code Package Shipping† BC846BWT1G 1B 3,000 / Tape & Reel SBC846BWT1G* BC847AWT1G 1E 3,000 / Tape & Reel SBC847AWT1G* BC847BWT1G 1F 3,000 / Tape & Reel SBC847BWT1G* SC−70 (SOT−323) BC847CWT1G (Pb−Free) 1G 3,000 / Tape & Reel SBC847CWT1G* BC847CWT3G 1G 10,000 / Tape & Reel SBC847CWT3G* BC848BWT1G 1K NSVBC848BWT1G* 3,000 / Tape & Reel BC848CWT1G 1L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 12

BC846, BC847, BC848 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. e1 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.032 0.035 0.040 HE E A1 0.00 0.05 0.10 0.000 0.002 0.004 1 2 A2 0.70 REF 0.028 REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 b E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e e1 0.65 BSC 0.026 BSC L 0.20 0.38 0.56 0.008 0.015 0.022 HE 2.00 2.10 2.40 0.079 0.083 0.095 c STYLE 3: A A2 PIN 1.BASE 2.EMITTER 3.COLLECTOR 0.05 (0.002) L A1 SOLDERING FOOTPRINT* 0.65 0.65 0.025 0.025 1.9 0.075 0.9 0.035 0.7 0.028 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com BC846AWT1/D 13