B C 8 4 6 / B C 8 4 7 / BC846 / BC847 / BC848 / BC850 B C 8 NPN Epitaxial Silicon Transistor 4 8 / B C 8 Features 5 0 • Switching and Amplifier Applications 3 — • Suitable for Automatic Insertion in Thick and Thin-film Circuits N • Low Noise: BC850 2 PN • Complement to BC856, BC857, BC858, BC859, and BC860 SOT-23 E 1 p 1.Base 2. Emitter 3. Collector i t a x i a l S i l i c o Ordering Information(1) n T Part Number Marking Package Packing Method ra n BC846AMTF 8AA SOT-23 3L Tape and Reel s i s BC846BMTF 8AB SOT-23 3L Tape and Reel t o BC846CMTF 8AC SOT-23 3L Tape and Reel r BC847AMTF 8BA SOT-23 3L Tape and Reel BC847BMTF 8BB SOT-23 3L Tape and Reel BC847CMTF 8BC SOT-23 3L Tape and Reel BC848BMTF 8CB SOT-23 3L Tape and Reel BC848CMTF 8CC SOT-23 3L Tape and Reel BC850AMTF 8EA SOT-23 3L Tape and Reel BC850CMTF 8EC SOT-23 3L Tape and Reel Note: 1.Affix “-A,-B,-C” means h classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type FE packing. © 2002 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 2 1 BC846/D

B C Absolute Maximum Ratings 8 4 6 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- / ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- B tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The C absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. 8 A 4 7 Symbol Parameter Value Unit / B BC846 80 C 8 VCBO Collector-Base Voltage BC847 / BC850 50 V 4 8 BC848 30 / B BC846 65 C V Collector-Emitter Voltage BC847 / BC850 45 V 8 CEO 5 BC848 30 0 — BC846 / BC847 6 VEBO Emitter-Base Voltage V N BC848 / BC850 5 P N I Collector Current (DC) 100 mA C E TJ Junction Temperature 150 °C p i TSTG Storage Temperature Range -65 to +150 °C ta x i a l S i Thermal Characteristics(2) li c o Values are at TA = 25°C unless otherwise noted. n T Symbol Parameter Value Unit r a n Power Dissipation 310 mW s PD Derate Above 25°C 2.48 mW/°C is t o RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W r Note: 2.PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2

B C Electrical Characteristics(3) 8 4 6 Values are at T = 25°C unless otherwise noted. A / B Symbol Parameter Conditions Min. Typ. Max. Unit C 8 ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA 4 7 hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800 / V (sat) Collector-Emitter Saturation IC = 10 mA, IB = 0.5 mA 90 250 mV BC CE Voltage I = 100 mA, I = 5 mA 200 600 8 C B 4 I = 10 mA, I = 0.5 mA 700 8 VBE(sat) Collector-Base Saturation Voltage IC = 100 mA, BI = 5 mA 900 mV / B C B C V = 5 V, I = 2 mA 580 660 700 CE C 8 VBE(on) Base-Emitter On Voltage mV 5 VCE = 5 V, IC = 10 mA 720 0 V = 5 V, I = 10 mA, — f Current Gain Bandwidth Product CE C 300 MHz T f = 100 MHz N P C Output Capacitance V = 10 V, I = 0, f = 1 MHz 3.5 6.0 pF ob CB E N Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF E p BC846 / BC847 / BC848 V = 5 V, I = 200 μA, 2.0 10.0 i CE C t Noise BC850 RG = 2 kΩ, f = 1 kHz 1.2 4.0 ax NF dB i Figure V = 5 V, I = 200 μA, a BC850 RCE= 2 kΩ, fC = 30 to 15000 Hz 1.4 3.0 l S G i l i Note: c o 3.Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2% n T r a n s hFE Classification is t o Classification A B C r h 110 ~ 220 200 ~ 450 420 ~ 800 FE www.onsemi.com 3

B C Typical Performance Characteristics 8 4 6 / B C 100 1000 8 mA], COLLECTOR CURRENT 468000 IB = 400μIBA = 3I5B0 =μ 3A00IBμ =A 2I5BI 0B= μI= B2A =01 0510μ0μA0AμA h, DC CURRENT GAINFE 100 TTTAAA === 1-255550 o oCoCC VCE = 5V 47 / BC848 / BC8 I[C 20 IB = 50μA 50 — 00 4 8 12 16 20 100.1 1 10 100 1000 N I [mA], COLLECTOR CURRENT P V [V], COLLECTOR-EMITTER VOLTAGE C CE N Figure 1. Static Characteristic Figure 2. DC Current Gain E p i t a x i 1 10 a l V [V], COLLECTOR-EMITTER CE(SAT)SATURATION VOLTAGE0.1 IC = 10IB TA = -55oC TA = 25oTCA = 150oC V [V], COLLECTOR-EMITTER CE(SAT)SATURATION VOLTAGE0.11 IC = 20IB TA = -55oC TA = 25oC TA = 150oC Silicon Transistor 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 I [mA], COLLECTOR CURRENT I [mA], COLLECTOR CURRENT C C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage E E G G A TA 1.2 LT 1.2 L O N VO IC = 10IB ON V IC = 20IB TIO 1.0 ATI 1.0 A R R U U T R SAT 0.8 TA = -55oC ER SA 0.8 TA = -55oC MITTE 0.6 TA = 25oC EMITT 0.6 TA = 25oC E-E SE- V [V], BASBE(SAT) 00..240.1 1 TA = 150oC10 100 1000 V [V], BABE(SAT) 00..240.1 1 TA = 150oC10 100 1000 I [mA], COLLECTOR CURRENT I [mA], COLLECTOR CURRENT C C Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage www.onsemi.com 4

B C Typical Performance Characteristics (Continued) 8 4 6 / B C 100 8 T 100 VCE = 5V f=1MHz 47 N R CURRE 10 TANCE 10 / BC8 O CI 4 CT PA 8 mA], COLLE 1 TA = 150oC TA = 25oC TA = -55oC C[pF], CAob 1 / BC8 I [C 50 — 0.10.0 0.2 0.4 0.6 0.8 1.0 1.2 0.11 10 100 1000 N P V [V], BASE-EMITTER ON VOLTAGE BE(ON) VCB[V], COLLECTOR-BASE VOLTAGE N Figure 7. Base-Emitter On Voltage Figure 8. Collector Output Capacitance E p i t a x T C i U 1000 a D l O R S DTH P VCE=5V ilic WI o D 100 n BAN T GAIN- ran T s REN 10 is R t U o Hz], C r M f[T 10.1 1 10 100 I[mA], COLLECTOR CURRENT C Figure 9. Current Gain Bandwidth Product www.onsemi.com 5

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