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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BVN NPN/PNP general purpose transistor Product data sheet 2001 Nov 07 Supersedes data of 2001 Aug 30

NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN FEATURES PINNING • 300 mW total power dissipation PIN DESCRIPTION • Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Excellent coplanarity due to straight leads 2, 5 base TR1; TR2 • Replaces two SC-75/SC-89 packaged transistors on 6, 3 collector TR1; TR2 same PCB area • Reduced required PCB area • Reduced pick and place costs. APPLICATIONS handbook, halfpag6e 5 4 6 5 4 • General purpose switching and amplification • Switch mode power supply complementary MOSFET driver TR2 TR1 • Complementary driver for audio amplifiers. 1 2 3 1 2 3 DESCRIPTION MAM443 Top view NPN/PNP transistor pair in a SOT666 plastic package. MARKING TYPE NUMBER MARKING CODE Fig.1 Simplified outline (SOT666) and symbol. BC847BVN 13 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity V collector-base voltage open emitter − 50 V CBO V collector-emitter voltage open base − 45 V CEO V emitter-base voltage open collector − 5 V EBO I collector current (DC) − 100 mA C I peak collector current − 200 mA CM I peak base current − 200 mA BM P total power dissipation T ≤ 25 °C; note 1 − 200 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Per device P total power dissipation T ≤ 25 °C; note 1 − 300 mW tot amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2

NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient notes 1 and 2 416 K/W th j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering is reflow soldering. CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity I collector-base cut-off current V = 30 V; I = 0 − − 15 nA CBO CB E V = 30 V; I = 0; T = 150 °C − − 5 μA CB E j I emitter-base cut-off current V = 5 V; I = 0 − − 100 nA EBO EB C h DC current gain V = 5 V; I = 2 mA 200 − 450 FE CE C V collector-emitter saturation I = 10 mA; I = 0.5 mA − − 100 mV CEsat C B voltage I = 100 mA; I = 5 mA; note 1 − − 300 mV C B V collector-emitter saturation I = 10 mA; I = 0.5 mA − 755 − mV BEsat C B voltage f transition frequency I = 10 mA; V = 5 V; f = 100 MHz 100 − − MHz T C CE NPN transistor V base-emitter turn-on voltage V = 5 V; I = 2 mA 580 655 700 mV BE CE C C collector capacitance V = 10 V; I = I = 0; f = 1MHz − − 1.5 pF c CB E e C emitter capacitance V = 500 mV; I = I = 0; f = 1MHz − 11 − pF e EB C c PNP transistor V base-emitter turn-on voltage V = −5 V; I = −2 mA 600 655 750 mV BE CE C C collector capacitance V = −10 V; I = I = 0; f = 1MHz − − 2.2 pF c CB C c C emitter capacitance V = −500 mV; I = I = 0; f = 1MHz − 10 − pF e EB E e Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2001 Nov 07 3

NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN MLD703 MLD704 600 1200 handbook, halfpage handbook, halfpage VBE (1) mV hFE 1000 (1) 400 800 (2) (2) 600 200 (3) (3) 400 0 200 10−1 1 10 102 103 10−2 10−1 1 10 102 103 IC (mA) IC (mA) TR1 (NPN); VCE = 5 V. TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 DC current gain as a function of collector Fig.3 Base-emitter voltage as a function of current: typical values. collector current; typical values. 104 MLD705 1200 MLD706 handbook, halfpage handbook, halfpage VBEsat VCEsat (mV) (mV) 1000 (1) 103 (2) 800 (3) 600 102 (1) (2) (3) 400 10 200 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) TR1 (NPN); IC/IB = 20. TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a Fig.5 Base-emitter saturation voltage as a function of collector current: typical values. function of collector current. 2001 Nov 07 4

NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN 1000 MLD699 −1200 MLD700 handbook, halfpage handbook, halfpage hFE VBE mV 800 −1000 (1) 600 −800 (1) (2) 400 −600 (2) 200 (3) −400 (3) 0 −200 −10−2 −10−1 −1 −10 −102 −103 −10−2 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) TR2 (PNP); VCE = −5 V. TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.6 DC current gain as a function of collector Fig.7 Base-emitter voltage as a function of current: typical values. collector current; typical values. −104 MLD701 −1200 MLD702 handbook, halfpage handbook, halfpage VBEsat VCEsat (mV) (mV) −1000 (1) −103 −800 (2) (3) −600 −102 (1) (2) (3) −400 −10 −200 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) TR2 (PNP); IC/IB = 20. TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.8 Collector-emitter saturation voltage as a Fig.9 Base-emitter saturation voltage as a function of collector current: typical values. function of collector current. 2001 Nov 07 5

NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D A E X S Y S HE 6 5 4 pin 1 index A 1 2 3 c e1 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y 0.6 0.27 0.18 1.7 1.3 1.7 0.3 mm 1.0 0.5 0.1 0.1 0.5 0.17 0.08 1.5 1.1 1.5 0.1 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 01-01-04 SOT666 01-08-27 2001 Nov 07 6

NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Nov 07 7

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Nov 07 Document order number: 9397 750 09039