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  • 型号: BC846S,125
  • 制造商: NXP Semiconductors
  • 库位|库存: xxxx|xxxx
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BC846S,125产品简介:

ICGOO电子元器件商城为您提供BC846S,125由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BC846S,125价格参考¥0.24-¥0.24。NXP SemiconductorsBC846S,125封装/规格:晶体管 - 双极 (BJT) - 阵列, Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 300mW Surface Mount 6-TSSOP。您可以下载BC846S,125参考资料、Datasheet数据手册功能说明书,资料中有BC846S,125 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS DUAL NPN 65V 100MA 6TSSOP两极晶体管 - BJT Dual NPN 65V 100mA 200mW 100MHz

产品分类

晶体管(BJT) - 阵列分离式半导体

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,NXP Semiconductors BC846S,125-

数据手册

点击此处下载产品Datasheet

产品型号

BC846S,125

PCN封装

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PCN设计/规格

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不同 Ib、Ic时的 Vce饱和值(最大值)

300mV @ 5mA,100mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

110 @ 2mA,5V

产品种类

两极晶体管 - BJT

供应商器件封装

6-TSSOP

其它名称

568-6061-6

功率-最大值

300mW

包装

Digi-Reel®

发射极-基极电压VEBO

6 V

商标

NXP Semiconductors

增益带宽产品fT

100 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

6-TSSOP,SC-88,SOT-363

封装/箱体

SOT-363

工厂包装数量

3000

晶体管极性

NPN

晶体管类型

2 NPN(双)

最大功率耗散

200 mW

标准包装

1

特色产品

http://www.digikey.com/cn/zh/ph/NXP/I2C.html

电压-集射极击穿(最大值)

65V

电流-集电极(Ic)(最大值)

100mA

电流-集电极截止(最大值)

-

直流集电极/BaseGainhfeMin

110

配置

Dual

集电极—发射极最大电压VCEO

65 V

集电极连续电流

100 mA

频率-跃迁

100MHz

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PDF Datasheet 数据手册内容提取

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC846S NPN general purpose double transistor Product data sheet 1999 Sep 01 Supersedes data of 1999 May 28

NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S FEATURES • Two transistors in one package • Reduces number of components and board space handbook, halfpage 6 5 4 • No mutual interference between the transistors. 6 5 4 TR2 APPLICATIONS TR1 • General purpose switching and small signal 1 2 3 amplification. 1 2 3 Top view MAM340 DESCRIPTION NPN double transistor in an SC-88 (SOT363) plastic six lead package. Fig.1 Simplified outline (SC-88) and symbol. PINNING PIN DESCRIPTION MARKING 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 TYPE NUMBER MARKING CODE 6, 3 collector TR1; TR2 BC846S 4Ft LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor V collector-base voltage open emitter − 80 V CBO V collector-emitter voltage open base − 65 V CEO V emitter-base voltage open collector − 6 V EBO I collector current (DC) − 100 mA C P total power dissipation T ≤ 25 °C − 200 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Per device P total power dissipation T ≤ 25 °C; note 1 − 300 mW tot amb Note 1. Refer to SC-88 (SOT363) standard mounting conditions. 1999 Sep 01 2

NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 416 K/W th j-a Note 1. Refer to SC-88 (SOT363) standard mounting conditions. CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor I collector cut-off current I = 0; V = 30 V − − 15 nA CBO E CB I = 0; V = 30 V; T = 150 °C − − 5 μA E CB j I emitter cut-off current I = 0; V = 5 V − − 100 nA EBO C EB h DC current gain I = 2 mA; V = 5 V 110 − − FE C CE V collector-emitter saturation I = 10 mA; I = 0.5 mA − − 100 mV CEsat C B voltage I = 100 mA; I = 5 mA; note 1 − − 300 mV C B V base-emitter saturation I = 10 mA; I = 0.5 mA − 770 − mV BEsat C B voltage C collector capacitance I = i = 0; V = 10 V; f = 1 MHz − − 1.5 pF c E e CB f transition frequency I = 10 mA; V = 5 V; 100 − − MHz T C CE f = 100 MHz Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 1999 Sep 01 3

NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S 103 MGL738 1200 MGL739 handbook, halfpage handbook, halfpage VBE VCEsat (mV) (mV) 1000 (1) 800 (2) 102 (1) (2) 600 (3) (3) 400 10 200 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20. VCE = 5 V. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Collector-emitter saturation voltage as a Fig.3 Base-emitter voltage as a function of function of collector current; typical values. collector current; typical values. MGL740 400 handbook, full pagewidth hFE (1) 300 200 (2) (3) 100 0 10−1 1 10 102 103 IC (mA) VCE = 5 V. (2) Tamb = 25 °C. (1) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.4 DC current gain as a function of collector current; typical values. 1999 Sep 01 4

NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D B E A X y HE v M A 6 5 4 Q pin 1 index A A1 1 2 3 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) A1 UNIT A max bp c D E e e1 HE Lp Q v w y 1.1 0.30 0.25 2.2 1.35 2.2 0.45 0.25 mm 0.1 1.3 0.65 0.2 0.2 0.1 0.8 0.20 0.10 1.8 1.15 2.0 0.15 0.15 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT363 SC-88 97-02-28 1999 Sep 01 5

NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Sep 01 6

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/02/pp7 Date of release: 1999 Sep 01 Document order number: 9397 750 06102