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  • 型号: BC817-16-7-F
  • 制造商: Diodes Inc.
  • 库位|库存: xxxx|xxxx
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BC817-16-7-F产品简介:

ICGOO电子元器件商城为您提供BC817-16-7-F由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BC817-16-7-F价格参考。Diodes Inc.BC817-16-7-F封装/规格:晶体管 - 双极 (BJT) - 单, Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 310mW Surface Mount SOT-23-3。您可以下载BC817-16-7-F参考资料、Datasheet数据手册功能说明书,资料中有BC817-16-7-F 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANSISTOR NPN 45V SOT23-3两极晶体管 - BJT NPN BIPOLAR

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

Diodes Incorporated

产品手册

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产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,Diodes Incorporated BC817-16-7-F-

数据手册

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产品型号

BC817-16-7-F

PCN其它

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PCN设计/规格

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RoHS指令信息

http://diodes.com/download/4349

不同 Ib、Ic时的 Vce饱和值(最大值)

700mV @ 50mA,500mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

100 @ 100mA,1V

产品目录绘图

产品目录页面

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产品种类

两极晶体管 - BJT

供应商器件封装

SOT-23-3

其它名称

BC817-16-FDIDKR-ND
BC817-16FDIDKR

功率-最大值

310mW

包装

Digi-Reel®

发射极-基极电压VEBO

5 V

商标

Diodes Incorporated

增益带宽产品fT

100 MHz

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SOT-23

工厂包装数量

3000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

310 mW

最大工作温度

+ 150 C

最大直流电集电极电流

0.8 A

最小工作温度

- 65 C

标准包装

1

电压-集射极击穿(最大值)

45V

电流-集电极(Ic)(最大值)

800mA

电流-集电极截止(最大值)

100nA

直流集电极/BaseGainhfeMin

100

系列

BC817-16

配置

Single

集电极—发射极最大电压VCEO

45 V

频率-跃迁

100MHz

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PDF Datasheet 数据手册内容提取

BC817-16/-25/-40 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data  Ideally Suited for Automatic Insertion  Case: SOT23  Epitaxial Planar Die Construction  Case Material: Molded Plastic, “Green” Molding Compound;  Complementary PNP Types Available (BC807) UL Flammability Classification Rating 94V-0  For switching and AF Amplifier Applications  Moisture Sensitivity: Level 1 per J-STD-020  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Terminals: Finish – Matte Tin Plated Leads, Solderable per  Halogen and Antimony Free. "Green" Device (Note 3) MIL-STD-202, Method 208  Qualified to AEC-Q101 Standards for High Reliability  Weight 0.008 grams (Approximate)  Automotive-Compliant Parts Are Available Under Separate Datasheet (BC817-16Q_40Q) SOT23 Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BC817-16-7-F AEC-Q101 K6A 7 8 3,000 BC817-25-7-F AEC-Q101 K6B 7 8 3,000 BC817-40-7-F AEC-Q101 K6C 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 XXX = Product Type Marking Code (See Table Above) YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) Date Code Key Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 Code C D E F G H I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D BC817-16/ -25/ -40 1 of 7 June 2016 Document number: DS11107 Rev. 21 - 2 www.diodes.com © Diodes Incorporated

BC817-16/-25/-40 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 0.5 A Peak Collector Current ICM 1.0 A Peak Base Current IBM 200 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit (Note 5) 310 Power Dissipation (Note 6) PD 350 mW (Note 5) 403 Thermal Resistance, Junction to Ambient (Note 6) RθJA 357 °C/W Thermal Resistance, Junction to Leads (Note 7) RθJL 350 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except mounted on 15mm x 15mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BC817-16/ -25/ -40 2 of 7 June 2016 Document number: DS11107 Rev. 21 - 2 www.diodes.com © Diodes Incorporated

BC817-16/-25/-40 Thermal Characteristics and Derating Information W) 0.4 W) 400 n ( C/ 350 o o ati 0.3 e ( 300 Dissip 0.2 stanc 220500 D=0.5 wer Resi 150 D=0.1 o 0.1 al 100 D=0.2 Single Pulse P m x r 50 a e D=0.05 M h 0.0 T 0 0 25 50 75 100 125 150 110000µμ 1m 10m 100m 1 10 100 1k Temperature (oC) Pulse Width (s) Derating Curve Transient Thermal Impedance ) 10 W n ( Single Pulse. Tamb=25oC o ati p si s Di 1 r e w o P x a M 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation BC817-16/ -25/ -40 3 of 7 June 2016 Document number: DS11107 Rev. 21 - 2 www.diodes.com © Diodes Incorporated

BC817-16/-25/-40 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 — — V IC = 100µA Collector-Emitter Breakdown Voltage BVCEO 45 — — V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 5 — — V IC = 100µA Collector-Emitter Cut-Off Current ICES — — 150.00 µnAA VVCCEE == 4255VV, TJ = +150°C Emitter-Base Cut-Off Current IEBO — — 100 nA VEB = 5.0V BC817-16 100 250 BC817-25 160 400 VCE = 1.0V, IC = 100mA BC817-40 250 600 DC Current Gain (Note 9) BC817-16 hFE 60 — — BC817-25 100 — VCE = 1.0V, IC = 300mA BC817-40 170 Collector-Emitter Saturation Voltage (Note 9) VCE(SAT) — — 0.7 V IC = 500mA, IB = 50mA Base-Emitter Voltage (Note 9) VBE — — 1.2 V VCE = 1.0V, IC = 300mA Gain Bandwidth Product fT 100 — — MHz Vf =C E5 0=M 5H.0zV , IC = 10mA, Collector-Base Capacitance CCBO — — 12 pF VCB = 10V, f = 1.0MHz Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC817-16/ -25/ -40 4 of 7 June 2016 Document number: DS11107 Rev. 21 - 2 www.diodes.com © Diodes Incorporated

BC817-16/-25/-40 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 500 100 mA) 400 mA) 80 URRENT ( 300 CURRENT ( 60 R C OR O T 200 CT 40 C E E L LL OL O , CC100 I, CC20 I 0 0 0 1 2 0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1 Typical Collector Current vs. Collector-Emitter Voltage Figure 2 Typical Collector Current vs. Collector-Emitter Voltage 1,000 0.5 VCE = 1V R 0.4 AIN 150°C MITTEE (V) IC / IB = 10 ENT G TA = 25°C -50°C OR-EOLTAG0.3 RR100 ECTN V U LO DC C COLRATI 0.2 h, FE , E(SAT)SATU 25°C C 0.1 V 150°C -50°C 10 0 0.1 1 10 100 1,000 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3 Typical DC Current Gain vs. Collector Current Figure 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1,000 z) H M T ( C U D O R P H 100 T D WI D N A B N- AI G , T f 10 1 10 100 1,000 I , COLLECTOR CURRENT (mA) C Figure 5 Gain-Bandwidth Product vs. Collector Current BC817-16/ -25/ -40 5 of 7 June 2016 Document number: DS11107 Rev. 21 - 2 www.diodes.com © Diodes Incorporated

BC817-16/-25/-40 Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. All 7° H SOT23 GAUG0E.2 P5LANE Dim Min Max Typ J A 0.37 0.51 0.40 K1 K B 1.20 1.40 1.30 C 2.30 2.50 2.40 a D 0.89 1.03 0.915 A M F 0.45 0.60 0.535 L L1 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 C B K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- D All Dimensions in mm F G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. Y Dimensions Value (in mm) C 2.0 X 0.8 Y1 C X1 1.35 Y 0.9 Y1 2.9 X X1 BC817-16/ -25/ -40 6 of 7 June 2016 Document number: DS11107 Rev. 21 - 2 www.diodes.com © Diodes Incorporated

BC817-16/-25/-40 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com BC817-16/ -25/ -40 7 of 7 June 2016 Document number: DS11107 Rev. 21 - 2 www.diodes.com © Diodes Incorporated

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