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BC808-25LT1G产品简介:
ICGOO电子元器件商城为您提供BC808-25LT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BC808-25LT1G价格参考¥0.09-¥0.09。ON SemiconductorBC808-25LT1G封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 25V 500mA 100MHz 300mW 表面贴装 SOT-23-3(TO-236)。您可以下载BC808-25LT1G参考资料、Datasheet数据手册功能说明书,资料中有BC808-25LT1G 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS PNP 25V 500MA SOT-23两极晶体管 - BJT 500mA 30V PNP |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | ON Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,ON Semiconductor BC808-25LT1G- |
数据手册 | |
产品型号 | BC808-25LT1G |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 700mV @ 50mA,500mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 160 @ 100mA,1V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-23-3(TO-236) |
其它名称 | BC808-25LT1GOSCT |
功率-最大值 | 300mW |
包装 | 剪切带 (CT) |
发射极-基极电压VEBO | 5 V |
商标 | ON Semiconductor |
增益带宽产品fT | 100 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23-3 |
工厂包装数量 | 3000 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 225 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.5 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 25V |
电流-集电极(Ic)(最大值) | 500mA |
电流-集电极截止(最大值) | 100nA(ICBO) |
直流集电极/BaseGainhfeMin | 160 |
系列 | BC808 |
配置 | Single |
集电极—发射极最大电压VCEO | - 25 V |
集电极—基极电压VCBO | - 30 V |
集电极—射极饱和电压 | - 0.7 V |
集电极连续电流 | - 0.5 A |
频率-跃迁 | 100MHz |
BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon www.onsemi.com Features • COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector − Emitter Voltage VCEO −25 V 2 Collector − Base Voltage VCBO −30 V SOT−23 CASE 318 Emitter − Base Voltage VEBO −5.0 V STYLE 6 Collector Current − Continuous IC −500 mAdc THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Tota(DNl eDoreatevte i1c a)e bT DoAiv s=es 2i2p55a°°tCiCon FR−5 Board, PD 212.85 mmWW/°C 5x (cid:2)M(cid:2) Thermal Resistance, R(cid:2)JA 556 °C/W 1 Junction−to−Ambient 5x =Device Code Total Device Dissipation Alumina PD x = F or G Substrate, (Note 2) M =Date Code* TA = 25°C 300 mW (cid:2) =Pb−Free Package Derate above 25°C 2.4 mW/°C (Note: Microdot may be in either location) Thermal Resistance, R(cid:2)JA 417 °C/W *Date Code orientation and/or overbar may Junction−to−Ambient vary depending upon manufacturing location. Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 2 of this data sheet. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: October, 2016 − Rev. 5 BC808−25LT1/D
BC808−25LT1G, BC808−40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO −25 − − V (IC = −10 mA) Collector−Emitter Breakdown Voltage V(BR)CES −30 − − V (VEB = 0, IC = −10 (cid:3)A) Emitter−Base Breakdown Voltage V(BR)EBO −5.0 − − V (IE = −1.0 (cid:3)A) Collector Cutoff Current ICBO (VCB = −20 V) − − −100 nA (VCB = −20 V, TJ = 150°C) − − −5.0 (cid:3)A ON CHARACTERISTICS DC Current Gain hFE − (IC = −100 mA, VCE = −1.0 V) BC808−25LT1G 160 − 400 BC808−40LT1G 250 − 600 (IC = −500 mA, VCE = −1.0 V) 40 − − Collector−Emitter Saturation Voltage VCE(sat) − − −0.7 V (IC = −500 mA, IB = −50 mA) Base−Emitter On Voltage VBE(on) − − −1.2 V (IC = −500 mA, IB = −1.0 V) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT 100 − − MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance Cobo − 10 − pF (VCB = −10 V, f = 1.0 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping† BC808−25LT1G SOT−23 5F 3000 / Tape & Reel SBC808−25LT1G (Pb−Free) BC808−40LT1G SOT−23 5G 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2
BC808−25LT1G, BC808−40LT1G 1000 VCE = -1.0 V TA = 25°C N AI G T N E R R 100 U C C D , E F h 10 -0.1 -1.0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain S) -1.0 -1.0 T VOL TJ = 25°C TA = 25°C GE ( -0.8 -0.8 VBE(sat) @ IC/IB = 10 A T OL S) VBE(on) @ VCE = -1.0 V R V -0.6 IC = OLT -0.6 TTE -500 mA E (V MI G CTOR-E -0.4 IC = -300 mA V, VOLTA -0.4 E OLL -0.2 IC = -100 mA -0.2 , CCE IC = -10 mA VCE(sat) @ IC/IB = 10 V 0 0 -0.01 -0.1 -1.0 -10 -100 -1.0 -10 -100 -1000 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 2. Saturation Region Figure 3. “On” Voltages 100 C) +1.0 ° V/ m TS ( (cid:2)VC for VCE(sat) EFFICIEN 0 NCE (pF) Cib RE CO -1.0 PACITA 10 U A T C PERA -2.0 (cid:2)VB for VBE C, Cob M E T , V θ 1.0 -1.0 -10 -100 -1000 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT VR, REVERSE VOLTAGE (VOLTS) Figure 4. Temperature Coefficients Figure 5. Capacitances www.onsemi.com 3
BC808−25LT1G, BC808−40LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BC808−25LT1/D 4
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