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B C 8 0 November 2014 7 / B C 8 0 8 BC807 / BC808 — P PNP Epitaxial Silicon Transistor N P E p i t a x Features i a 3 l • Switching and Amplifier Applications S i • Suitable for AF-Driver Stages and Low Power Output Stages li c • Complement to BC817 / BC818 2 o n 1 SOT-23 T r 1. Base 2. Emitter 3. Collector a n s i s t o Ordering Information r Part Number Marking Package Packing Method BC80716MTF 9FA SOT-23 3L Tape and Reel BC80725MTF 9FB SOT-23 3L Tape and Reel BC80740MTF 9FC SOT-23 3L Tape and Reel BC80840MTF 9GC SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit BC807 -50 V Collector-Emitter Voltage V CES BC808 -30 BC807 -45 V Collector-Emitter Voltage V CEO BC808 -25 V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -800 mA C T Junction Temperature 150 °C J T Storage Temperature -65 to +150 °C STG © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.0 1

B C Thermal Characteristics(1) 8 0 7 Values are at T = 25°C unless otherwise noted. A / B Symbol Parameter Value Unit C 8 Power Dissipation 310 mW 0 PD Derate Above 25°C 2.48 mW/°C 8 — RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W P N Note: P 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. E p i t a x i a Electrical Characteristics l S Values are at T = 25°C unless otherwise noted. i A li c Symbol Parameter Conditions Min. Typ. Max. Unit o n Collector-Emitter Breakdown BC807 -45 T BV I = -10 mA, I = 0 V r CEO Voltage BC808 C B -25 a n s Collector-Emitter Breakdown BC807 -50 i BV I = -0.1 mA, V = 0 V s CES Voltage BC808 C BE -30 to r BV Emitter-Base Breakdown Voltage I = -0.1 mA, I = 0 -5 V EBO E C I Collector Cut-Off Current V = -25 V, V = 0 -100 nA CES CE BE I Emitter Cut-Off Current V = -4 V, I = 0 -100 nA EBO EB C h V = -1 V, I = -100 mA 100 630 FE1 CE C DC Current Gain h V = -1 V, I = -300 mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -500 mA, I = -50 mA -0.7 V CE C B V (on) Base-Emitter On Voltage V = -1 V, I = -300 mA -1.2 V BE CE C V = -5 V, I = -10 mA, f Current Gain Bandwidth Product CE C 100 MHz T f = 50 MHz C Output Capacitance V = -10 V, f = 1 MHz 12 pF ob CB h Classification FE Classification 16 25 40 h 100 ~ 250 160 ~ 400 250 ~ 630 FE1 h 60 ~ 100 ~ 170 ~ FE2 © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.0 2

B C Typical Performance Characteristics 8 0 7 / B C I[mA], COLLECTOR CURRENTC -----123450000000000 IB I=BI B=-II I BBB=5-I .=B==4-0 I . =Bm4---5 . 3=-I1m0A0 B. .3. m-5A05= .m20mA m-.m A5AA2mA.I0BA m= A- 1.5mAPT = 600mW I[mA], COLLECTOR CURRENTC ---112--26048 IB = - 8I0B μ=A - 7I0Bμ =A - I6B 0=μ -A I5B 0=μI B-A =4 0I-Bμ 3 =A0 Iμ- A2=0 -μ 1A0μA PT = 600mW 808 — PNP Epitaxia B l -0-0 -1 -2 IB = 0 -3 -4 -5 -0-0 -10 -20 -30IB = 0 -40 -50 Sil i VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE co n Figure 1. Static Characteristic Figure 2. Static Characteristic T r a n s i s 1000 GE -10 to PULSE LTA IC = 10 IB r VO PULSE VCE = - 2.0V N N O GAI 100 ATI -1 VCE(sat) h, DC CURRENT FE 10 - 1.0V at), V(sat)[V], SATURCE -0.1 VBE(sat) 1 V(sBE -0.01 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage -1000 100 VCE = -1V f = 1.0MHz NT PULSE CURRE -100 TANCE Cib OR ACI Cob ECT -10 CAP 10 I[mA], COLLC -1 C, C[pF], ibob -0.1 1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -0.1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE VBE[V], BASE-EMITTER VOLTAGE VEB[V], EMITTER-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.0 3

B C Typical Performance Characteristics (Continued) 8 0 7 / B C 8 0 1000 8 T VCE = -5.0V — C U D P O R N P H P DT E NDWI 100 pi BA ta N x AI i G a Hz], l S M f[T 10 ili -1 -10 -100 c o IC[mA], COLLECTOR CURRENT n T r Figure 7. Current Gain Bandwidth Product a n s i s t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.0 4

B C Physical Dimensions 8 0 7 / B C 8 0 0.95 8 2.92±0.20 — 3 P N 1.40 P E p +0.20 i 1.30 2.20 t -0.15 a x i a l S 1 2 il i (0.29) 0.60 co 0.95 0.37 n 0.20 A B 1.00 T 1.90 1.90 ra n LAND PATTERN s i RECOMMENDATION s t o r 1.20 MAX SEE DETAIL A (0.93) 0.10 0.00 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 8. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.0 5

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AccuPower(cid:165) F-PFS(cid:165) OPTOPLANAR® Awinda® FRFET® ®* AX-CAP®* Global Power ResourceSM ® TinyBoost® BitSiC(cid:165) GreenBridge(cid:165) PowerTrench® TinyBuck® Build it Now(cid:165) Green FPS(cid:165) PowerXS™ TinyCalc(cid:165) CorePLUS(cid:165) Green FPS(cid:165) e-Series(cid:165) Programmable Active Droop(cid:165) TinyLogic® CorePOWER(cid:165) Gmax(cid:165) QFET® TINYOPTO(cid:165) CROSSVOLT(cid:165) GTO(cid:165) QS(cid:165) TinyPower(cid:165) CTL(cid:165) IntelliMAX(cid:165) Quiet Series(cid:165) TinyPWM(cid:165) Current Transfer Logic(cid:165) ISOPLANAR(cid:165) RapidConfigure(cid:165) TinyWire(cid:165) DEUXPEED® Making Small Speakers Sound Louder (cid:165) TranSiC(cid:165) Dual Cool™ and Better™ TriFault Detect(cid:165) EcoSPARK® MegaBuck(cid:165) Saving our world, 1mW/W/kW at a time™ TRUECURRENT®* EfficientMax(cid:165) MICROCOUPLER(cid:165) SignalWise(cid:165) μSerDes(cid:165) ESBC(cid:165) MicroFET(cid:165) SmartMax(cid:165) ® MicroPak(cid:165) SMART START(cid:165) Fairchild® MicroPak2(cid:165) SSoPlMut®ions for Your Success(cid:165) UHC® Fairchild Semiconductor® MillerDrive(cid:165) STEALTH(cid:165) Ultra FRFET(cid:165) FFFFFAEAAasCTCStBTvTTC®e® Qnocurehie(cid:165)(cid:165)t Series(cid:165) MMMMMmTToVWotixNt®iiS®oo®nnaGMveraird®x®(cid:165) SSSSSuuuuupppppeereeerrrrSFMSSOEOOOTTTTS(cid:165)®(cid:165)(cid:165)®-3--68 XUVVVXsCioSnseli™XutFnaa(cid:165)Esg l™MTe(cid:165)Palxu(cid:165)s(cid:165) FPS(cid:165) SyncFET(cid:165) OOpPtToOHLiTO(cid:165)GIC® Sync-Lock™ (cid:3037)(cid:10106)™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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