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B C 5 5 January 2016 6 / B C 5 5 7 BC556 / BC557 / BC558 / BC559 / BC560 / B C PNP Epitaxial Silicon Transistor 5 5 8 / B C 5 Features 5 9 • Switching and Amplifier / B • High-Voltage: BC556, VCEO = -65 V C 5 • Low-Noise: BC559, BC560 6 TO-92 • Complement to BC546, BC547, BC548, BC549, and BC550 0 1. Collector — 2. Base 123 1 2 3. Emitter PN 3 P Straight Lead Bent Lead Bulk Packing Tape & Reel E Ammo Packing p i t a x i a l S i Ordering Information l i c o n Part Number Marking Package Packing Method T r BC556ABU BC556A TO-92 3L Bulk a n BC556ATA BC556A TO-92 3L Ammo s i s BC556BTA BC556B TO-92 3L Ammo t o BC556BTF BC556B TO-92 3L Tape and Reel r BC556BTFR BC556B TO-92 3L Tape and Reel BC557ATA BC557A TO-92 3L Ammo BC557BTA BC557B TO-92 3L Ammo BC557BTF BC557B TO-92 3L Tape and Reel BC558BTA BC558B TO-92 3L Ammo BC559BTA BC559B TO-92 3L Ammo BC559CTA BC559C TO-92 3L Ammo BC560CTA BC560C TO-92 3L Ammo © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 1

B C Absolute Maximum Ratings 5 5 6 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- / ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- B tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The C absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. 5 A 5 7 Symbol Parameter Value Unit / B BC556 -80 C 5 VCBO Collector-Base Voltage BC557 / BC560 -50 V 5 8 BC558 / BC559 -30 / B BC556 -65 C V Collector-Emitter Voltage BC557 / BC560 -45 V 5 CEO 5 9 BC558 / BC559 -30 / V Emitter-Base Voltage -5 V B EBO C I Collector Current (DC) -100 mA 5 C 6 I Peak Collector Current (Pulse) -200 mA 0 CP — I Peak Base Current (Pulse) -200 mA BP P TJ Junction Temperature 150 °C N TSTG Storage Temperature Range -65 to +150 °C P E p i t a x Thermal Characteristics(1) i a l Values are at TA = 25°C unless otherwise noted. S i l Symbol Parameter Max. Unit ic o Total Power Dissipation 500 mW n PD Derate Above 25°C 4.0 mW/°C Tr a RθJA Thermal Resistance, Junction-to-Ambient 250 °C/W ns i s Note: t o 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 2

B C Electrical Characteristics 5 5 6 Values are at T = 25°C unless otherwise noted. A / B Symbol Parameter Conditions Min. Typ. Max. Unit C 5 ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 -15 nA 5 7 hFE DC Current Gain VCE = -5 V, IC = -2 mA 110 800 / B Collector-Emitter Saturation IC = -10 mA, IB = -0.5 mA -90 -300 C V (sat) mV CE Voltage I = -100 mA, I = -5 mA -250 -650 5 C B 5 8 VBE(sat) Collector-Base Saturation Voltage IIC == --11000 m mAA, I, BI == - 0-.55 mmAA --790000 mV / B C B C V = -5 V, I = -2 mA -600 -660 -750 5 CE C V (on) Base-Emitter On Voltage mV 5 BE V = -5 V, I = -10 mA -800 9 CE C / V = -5 V, I = -10 mA, B f Current Gain Bandwidth Product CE C 150 MHz T f = 10 MHz C 5 C Output Capacitance V = -10 V, I = 0, f = 1 MHz 6 pF 6 ob CB E 0 BC556 / BC557 / BC558 V = -5 V, I = -200 μA, 2 10 — CE C Noise BC559 / BC560 f = 1 kHz, RG = 2 kΩ 1 4 P NF dB N Figure BC559 V = -5 V, I = -200 μA, 1.2 4.0 P CE C BC560 RG = 2 kΩ, f = 30 to 15000 MHz 1.2 2.0 E p i t a x i a hFE Classification l S i Classification A B C li c o hFE 110 ~ 220 200 ~ 450 420 ~ 800 n T r a n s i s t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 3

B C Typical Performance Characteristics 5 5 6 / B C -50 1000 5 COLLECTOR CURRENT ------223344050505 IB = -4IB0 0=μ -A3IB5 0=μ -IA3B 0=0 -μ2IAB5I B0= =μ - 2A-10500μμAA C CURRENT GAIN 100 TTTAAA === 1-255550ooCoCC VCE = -5V 57 / BC558 / BC I[mA], C --1105 IIB == --15000μμAA h, DFE 559 -5 B / B -0 10 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 -10 -100 -1000 C I [mA], COLLECTOR CURRENT 5 V [V], COLLECTOR-EMITTER VOLTAGE C 6 CE 0 Figure 1. Static Characteristic Figure 2. DC Current Gain — P N P -10 -1000 E R IC = 20 IB IC = 20 IB p V(sat) [V], COLLECTOR-EMITTECESATURATION VOLTAGE -0-.11 TA = 150oC TTA A= = - 5255ooCC I [mA], COLLECTOR CURRENTC -1-0100 TA = 150oC TA = 25oC TA = -55oC itaxial Silicon Tran s -0.01 -1 i -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 s t I [mA], COLLECTOR CURRENT V (sat) [V], BASE-EMITTER SATURATION VOLTAGE o C BE r Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage -1000 T V = -5V N CE f=1MHz E RR E 10 IE = 0 U C C -100 N TOR CITA C A LLE CAP mA], CO -10 C(pF), ob I[C T = 150oC T = 25oC T = -55oC A A A 1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 V (on) [V], BASE-EMITTER ON VOLTAGE BE VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 4

B C Typical Performance Characteristics (Continued) 5 5 6 / B C CT 1000 1000 55 U 7 DTH PROD VCE = -5V P [mW]D / BC5 WI N, 100 5 NT GAIN-BAND 100 R DISSIPATIO 10 8 / BC55 RE WE 9 CUR PO / B Hz], 10 1 C M -1 -10 0 50 100 150 5 f[T IC[mA], COLLECTOR CURRENT AMBIENT TEMPERATURE, [oC] 60 — Figure 7. Current Gain Bandwidth Product Figure 8. Power Deration P N P E e1000 p sistanc itax Re 100 50% ia ermal 3100%% l S ansient Th 101 2D%5=%1% RRtthhjjaa=(t2)=5r0(to)C*R/Wthja ilicon ed Tr Tr maliz 0.1 Single Pulse an or s N i r(t), 0.01 sto 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 r t1, time(sec) Figure 9. Normalized Transient Thermal Resistance © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 5

B C Physical Dimensions 5 5 6 / B C 5 5 7 / B C 5 5 8 / B C 5 5 9 / B C 5 6 0 — P N P E p i t a x i a l S i l i c o n T r a n s i s t o r Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION, BULK © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 6

B C Physical Dimensions (Continued) 5 5 6 / B C 5 5 7 / B C 5 5 8 / B C 5 5 9 / B C 5 6 0 — P N P E p i t a x i a l S i l i c o n T r a n s i s t o r Figure 11. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM, AMMO, TAPE AND REEL © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 7

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BC559BU BC559CBU BC559BBU BC559BTA BC559ATA BC559B BC559 BC559CTA BC559BTAR