BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 −65 BC557 −45 EMITTER BC558 −30 Collector - Base Voltage VCBO Vdc BC556 −80 BC557 −50 BC558 −30 TO−92 Emitter - Base Voltage VEBO −5.0 Vdc CASE 29 STYLE 17 Collector Current − Continuous IC −100 mAdc Collector Current − Peak ICM −200 1 Base Current − Peak IBM −200 mAdc 123 2 3 TDoetraal tDe eavbioceve D 2is5s°iCpation @ TA = 25°C PD 652.05 mmWW/°C STBRUALIGKH PTA LCEKAD TBAEPNET & L REEAEDL AMMO PACK Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit BC Thermal Resistance, Junction−to−Ambient R(cid:2)JA 200 °C/W AY5W5xWx (cid:2) Thermal Resistance, Junction−to−Case R(cid:2)JC 83.3 °C/W (cid:2) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. xx = 6B, 7A, 7B, 7C, or 8B A = Assembly Location Y = Year WW = Work Week (cid:2) = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: March, 2007 − Rev. 3 BC556B/D

BC556B, BC557A, B, C, BC558B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO V (IC = −2.0 mAdc, IB = 0) BC556 −65 − − BC557 −45 − − BC558 −30 − − Collector−Base Breakdown Voltage V(BR)CBO V (IC = −100 (cid:3)Adc) BC556 −80 − − BC557 −50 − − BC558 −30 − − Emitter−Base Breakdown Voltage V(BR)EBO V (IE = −100 (cid:3)Adc, IC = 0) BC556 −5.0 − − BC557 −5.0 − − BC558 −5.0 − − Collector−Emitter Leakage Current ICES (VCES = −40 V) BC556 − −2.0 −100 nA (VCES = −20 V) BC557 − −2.0 −100 BC558 − −2.0 −100 (VCES = −20 V, TA = 125°C) BC556 − − −4.0 (cid:3)A BC557 − − −4.0 BC558 − − −4.0 ON CHARACTERISTICS DC Current Gain hFE − (IC = −10 (cid:3)Adc, VCE = −5.0 V) A Series Device − 90 − B Series Devices − 150 − C Series Devices − 270 − (IC = −2.0 mAdc, VCE = −5.0 V) BC557 120 − 800 A Series Device 120 170 220 B Series Devices 180 290 460 C Series Devices 420 500 800 (IC = −100 mAdc, VCE = −5.0 V) A Series Device − 120 − B Series Devices − 180 − C Series Devices − 300 − Collector−Emitter Saturation Voltage VCE(sat) V (IC = −10 mAdc, IB = −0.5 mAdc) − −0.075 −0.3 (IC = −10 mAdc, IB = see Note 1) − −0.3 −0.6 (IC = −100 mAdc, IB = −5.0 mAdc) − −0.25 −0.65 Base−Emitter Saturation Voltage VBE(sat) V (IC = −10 mAdc, IB = −0.5 mAdc) − −0.7 − (IC = −100 mAdc, IB = −5.0 mAdc) − −1.0 − Base−Emitter On Voltage VBE(on) V (IC = −2.0 mAdc, VCE = −5.0 Vdc) −0.55 −0.62 −0.7 (IC = −10 mAdc, VCE = −5.0 Vdc) − −0.7 −0.82 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556 − 280 − BC557 − 320 − BC558 − 360 − Output Capacitance Cob − 3.0 6.0 pF (VCB = −10 V, IC = 0, f = 1.0 MHz) Noise Figure NF dB (IC = −0.2 mAdc, VCE = −5.0 V, BC556 − 2.0 10 RS = 2.0 k(cid:4), f = 1.0 kHz, (cid:5)f = 200 Hz) BC557 − 2.0 10 BC558 − 2.0 10 Small−Signal Current Gain hfe − (IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557 125 − 900 A Series Device 125 − 260 B Series Devices 240 − 500 C Series Devices 450 − 900 1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V. http://onsemi.com 2

BC556B, BC557A, B, C, BC558B BC557/BC558 2.0 −1.0 T GAIN 1.5 VTAC E= =2 5−°1C0 V −−00..89 TA = 25°C VBE(sat) @ IC/IB = 10 N RE 1.0 S) −0.7 DC CUR 0.7 E (VOLT −−00..65 VBE(on) @ VCE = −10 V ZED 0.5 LTAG −0.4 LI O A V RM V, −0.3 O , NFE 0.3 −−00..21 VCE(sat) @ IC/IB = 10 h 0.2 0 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 I , COLLECTOR CURRENT (mAdc) I , COLLECTOR CURRENT (mAdc) C C Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages −2.0 1.0 LTAGE (V) −1.6 TA = 25°C T (mV/C)° 1.2 −55°C to +125°C O N R V CIE 1.6 E −1.2 FI T F T E MI O 2.0 E C R− −0.8 IC = IC = −50 mA IC = −200 mA RE O −10 mA U CT AT 2.4 V, COLLECE −0.4 IC = −20 mA IC = −100 mA , TEMPERVB 2.8 0 θ −0.02 −0.1 −1.0 −10 −20 −0.2 −1.0 −10 −100 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (mA) B C Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient 10 Hz) 400 M Cib T ( 300 7.0 C U T = 25°C D A O 200 R CITANCE (pF) 53..00 Cob ANDWIDTH P 11805000 VTAC E= =2 5−°1C0 V A B C, CAP 2.0 GAIN − 60 − 40 T N E 30 R R U 1.0 C 20 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 (cid:2), T −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 f V , REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mAdc) R C Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3

BC556B, BC557A, B, C, BC558B BC556 −1.0 D) T = 25°C ZE VCE = −5.0 V J ALI TA = 25°C −0.8 M V @ I /I = 10 R BE(sat) C B O 2.0 S) GAIN (N 1.0 E (VOLT −0.6 VBE @ VCE = −5.0 V T G REN 0.5 OLTA −0.4 CUR V, V C −0.2 D , FE 0.2 VCE(sat) @ IC/IB = 10 h 0 −0.1 −0.2 −1.0−2.0 −5.0 −10 −20 −50 −100−200 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 7. DC Current Gain Figure 8. “On” Voltage S) −2.0 −1.0 LT C) O ° E (V −1.6 mV/ −1.4 R−EMITTER VOLTAG −−10..28 −1I0C m=A −20 mA −50 mA −100 mA −200 mA URE COEFFICIENT ( −−12..82 (cid:2)VB for VBE −55°C to 125°C O AT LLECT −0.4 MPER −2.6 O E C T V, CE 0 TJ = 25°C , θVB −3.0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (mA) B C Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient 40 T C U V = −5.0 V T = 25°C OD 500 CE J R 20 P F) Cib TH E (p WID 200 C D N N CITA 81.00 − BA 100 PA N CA 6.0 GAI 50 C, Cob T− N 4.0 RE R 20 U C 2.0 f(cid:2), T −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −1.0 −10 −100 V , REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) R C Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4

BC556B, BC557A, B, C, BC558B 1.0 0.7 D = 0.5 0.5 HERMALMALIZED) 00..32 0.2 0.05 SINGLE PULSE SIENT TCE (NOR 00.0.17 0.1 SINGLE PULSE P(pk) ZRZ(cid:2)(cid:2)(cid:2)JJJCAC(( tt=)) ==8 3 r(.(t3)t) °R CR(cid:2)/(cid:2)JWJCA MAX RANTAN 0.05 t1 R(cid:2)JA = 200°C/W MAX TS D CURVES APPLY FOR POWER r(t), RESI 0.03 t2 PULSE TRAIN SHOWN 0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1 TJ(pk) − TC = P(pk) R(cid:2)JC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0(cid:3)k 2.0(cid:3)k 5.0(cid:3)k 10(cid:3) t, TIME (ms) Figure 13. Thermal Response −200 1 s 3 ms A) −100 m The safe operating area curves indicate IC−VCE limits of the NT ( −50 TA = 25°C TJ = 25°C transistor that must be observed for reliable operation. Collector E load lines for specific circuits must fall below the limits indicated by R UR the applicable curve. OR C BC558 vaTrihaeb led adtae poef nFdiginugre u 1p4o nis cboansdeidti ounpso.n P TuJl(spek) c=u 1rv5e0s° Ca;r Te Cv oarli dT Af oisr ECT −10 BC557 duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be L BC556 L calculated from the data in Figure 13. At high case or ambient O I, CC −5.0 BTHOENRDMINAGL WLIIMRIET LIMIT tbeem hpaenrdalteudre tso, vthaeluremsa lle lsims itthaatino nthse w liimll riteadtiuocnes timhep opsoewde br yth saenc ocannd breakdown. SECOND BREAKDOWN LIMIT −2.0 −1.0 −5.0 −10 −30 −45 −65 −100 V , COLLECTOR−EMITTER VOLTAGE (V) CE Figure 14. Active Region − Safe Operating Area http://onsemi.com 5

BC556B, BC557A, B, C, BC558B ORDERING INFORMATION Device Package Shipping† BC556BG TO−92 5000 Units / Bulk (Pb−Free) BC556BZL1G TO−92 2000 / Ammo Box (Pb−Free) BC557AZL1G TO−92 2000 / Ammo Box (Pb−Free) BC557BG TO−92 5000 Units / Bulk (Pb−Free) BC557BRL1 TO−92 2000 / Tape & Reel BC557BRL1G TO−92 2000 / Tape & Reel (Pb−Free) BC557BZL1G TO−92 2000 / Ammo Box (Pb−Free) BC557CG TO−92 5000 Units / Bulk (Pb−Free) BC557CZL1G TO−92 2000 / Ammo Box (Pb−Free) BC558BRLG TO−92 2000 / Tape & Reel (Pb−Free) BC558BRL1G TO−92 2000 / Tape & Reel (Pb−Free) BC558BZL1G TO−92 2000 / Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6

BC556B, BC557A, B, C, BC558B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM NOTES: A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 G J 0.015 0.020 0.39 0.50 H J K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− V C N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 SECTION X−X R 0.115 −−− 2.93 −−− 1 N V 0.135 −−− 3.43 −−− N NOTES: R A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER TAPE & REEL ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T SPELAATNIENG K DIM MMIILNLIMETMEARXS A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 X X D GD 02..4400 02..5840 G J 0.39 0.50 J K 12.70 −−− N 2.04 2.66 V C P 1.50 4.00 R 2.93 −−− SECTION X−X V 3.43 −−− 1 N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com BC556B/D 7