BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector−Emitter Voltage VCEO −45 Vdc 3 Collector−Emitter Voltage VCES −50 Vdc EMITTER Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −800 mAdc Total Power Dissipation @ TA = 25°C PD 625 mW Derate above TA = 25°C 5.0 mW/°C Total Power Dissipation @ TA = 25°C PD 1.5 W TO−92 Derate above TA = 25°C 12 mW/°C CASE 29 STYLE 17 Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range 1 12 2 THERMAL CHARACTERISTICS 3 3 Characteristic Symbol Max Unit STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Thermal Resistance, Junction−to−Ambient R(cid:2)JA 200 °C/W AMMO PACK Thermal Resistance, Junction−to−Case R(cid:2)JC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended MARKING DIAGRAM Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC xxx AYWW(cid:2) (cid:2) BCxxx= Device Code A = Assembly Location Y = Year WW = Work Week (cid:2) = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: September, 2011 − Rev. 6 BC327/D

BC327, BC327−16, BC327−25, BC327−40 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −10 mA, IB = 0) −45 − − Collector−Emitter Breakdown Voltage V(BR)CES Vdc (IC = −100 (cid:3)A, IE = 0) −50 − − Emitter−Base Breakdown Voltage V(BR)EBO −5.0 − − Vdc (IE = −10 (cid:3)A, IC = 0) Collector Cutoff Current ICBO nAdc (VCB = −30 V, IE = 0) − − −100 Collector Cutoff Current ICES nAdc (VCE = −45 V, VBE = 0) − − −100 Emitter Cutoff Current IEBO − − −100 nAdc (VEB = −4.0 V, IC = 0) ON CHARACTERISTICS DC Current Gain hFE − (IC = −100 mA, VCE = −1.0 V) BC327 100 − 630 BC327−16 100 − 250 BC327−25 160 − 400 BC327−40 250 − 630 (IC = −300 mA, VCE = −1.0 V) 40 − − Base−Emitter On Voltage VBE(on) − − −1.2 Vdc (IC = −300 mA, VCE = −1.0 V) Collector−Emitter Saturation Voltage VCE(sat) − − −0.7 Vdc (IC = −500 mA, IB = −50 mA) SMALL−SIGNAL CHARACTERISTICS Output Capacitance Cob − 11 − pF (VCB = −10 V, IE = 0, f = 1.0 MHz) Current−Gain − Bandwidth Product fT − 260 − MHz (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) 1.0 NT 0.7 D = 0.5 E SI 0.5 N A RE 0.3 0.2 E TNC LIZED EFFECTIVERMAL RESISTA0000..00..1257 00.0.025 0.1SINGLE PULSE P(pk) t1 (cid:2)(cid:2)(cid:2)(cid:2)DJJJJ CCAAC( ( U==tt)) R 31==V70 r(50E(t)t°°S) CC(cid:2) (cid:2) J/A/JWWCAP PMMLAAYXX FOR AH 0.01 RMT0.03 SINGLE PULSE t2 POWER O PULSE TRAIN SHOWN r(t), N 0.02 DUTY CYCLE, D = t1/t2 RTJE(pAkD) − T TIMC E= APT(p tk1) (cid:2)JC(t) 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 1. Thermal Response http://onsemi.com 2

BC327, BC327−16, BC327−25, BC327−40 -1000 1000 1.0 s 1.0 ms TJ = 135°C VCE = -1.0 V mA) 100 (cid:3)s TA = 25°C NT ( dc AIN RE TC = 25°C T G R N CU dc RE OR -100 TA = 25°C UR 100 T C C C E D COLL CURRENT LIMIT h, FE , C THERMAL LIMIT I SECOND BREAKDOWN LIMIT -10 (APPLIES BELOW RATED VCEO) 10 -1.0 -3.0 -10 -30 -100 -0.1 -1.0 -10 -100 -1000 VCE, COLLECTOR-EMITTER VOLTAGE IC, COLLECTOR CURRENT (mA) Figure 2. Active Region − Safe Operating Area Figure 3. DC Current Gain S) -1.0 -1.0 T VOL TJ = 25°C TA = 25°C GE ( -0.8 -0.8 VBE(sat) @ IC/IB = 10 A T OL S) VBE(on) @ VCE = -1.0 V R V -0.6 IC = OLT -0.6 TTE -500 mA E (V MI G CTOR-E -0.4 IC = -300 mA V, VOLTA -0.4 E OLL -0.2 IC = -100 mA -0.2 , CCE IC = -10 mA VCE(sat) @ IC/IB = 10 V 0 0 -0.01 -0.1 -1.0 -10 -100 -1.0 -10 -100 -1000 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Saturation Region Figure 5. “On” Voltages 100 C) +1.0 ° V/ m TS ( (cid:2)VC for VCE(sat) EFFICIEN 0 NCE (pF) Cib RE CO -1.0 PACITA 10 U A T C PERA -2.0 (cid:2)VB for VBE C, Cob M E T , V θ 1.0 -1.0 -10 -100 -1000 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT VR, REVERSE VOLTAGE (VOLTS) Figure 6. Temperature Coefficients Figure 7. Capacitances http://onsemi.com 3

BC327, BC327−16, BC327−25, BC327−40 ORDERING INFORMATION Device Order Number Specific Device Marking Package Type Shipping† BC327G 7 TO−92 Straight Lead 5000 Units / Bulk (Pb−Free) BC327RL1G 327 TO−92 Bent Lead 2000 / Tape & Reel (Pb−Free) BC327−025G 327 TO−92 Straight Lead 5000 Units / Bulk (Pb−Free) BC327−25RL1G 7−25 TO−92 Bent Lead 2000 / Tape & Reel (Pb−Free) BC327−25ZL1G 32725 TO−92 Bent Lead 2000 / Tape & Ammo Box (Pb−Free) BC327−40ZL1G 7−40 TO−92 Bent Lead 2000 / Tape & Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4

BC327, BC327−16, BC327−25, BC327−40 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A NOTES: B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 H J K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X−X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N R A B BENT LEAD N1O.TEDSIM:ENSIONING AND TOLERANCING PER TAPE & REEL ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T MILLIMETERS SPELAATNIENG K DIM MIN MAX A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 X X D G 2.40 2.80 G J 0.39 0.50 K 12.70 --- J N 2.04 2.66 V P 1.50 4.00 C R 2.93 --- V 3.43 --- SECTION X−X 1 N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com BC327/D 5