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BAV102产品简介:
ICGOO电子元器件商城为您提供BAV102由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BAV102价格参考。Fairchild SemiconductorBAV102封装/规格:二极管 - 整流器 - 单, Diode Standard 150V 200mA Surface Mount SOD-80。您可以下载BAV102参考资料、Datasheet数据手册功能说明书,资料中有BAV102 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SML SIGNAL 150V 0.2A LL34二极管 - 通用,功率,开关 LL-34 200V 600mA |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,二极管 - 通用,功率,开关,Fairchild Semiconductor BAV102- |
数据手册 | |
产品型号 | BAV102 |
不同If时的电压-正向(Vf) | 1.25V @ 200mA |
不同 Vr、F时的电容 | 5pF @ 0V,1MHz |
不同 Vr时的电流-反向漏电流 | 100nA @ 150V |
二极管类型 | 标准 |
产品种类 | 二极管 - 通用,功率,开关 |
供应商器件封装 | LL-34 |
其它名称 | BAV102FSCT |
包装 | 剪切带 (CT) |
单位重量 | 51.840 mg |
反向恢复时间(trr) | 50ns |
商标 | Fairchild Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | MELF(LL-34) |
封装/箱体 | LL-34 |
峰值反向电压 | 200 V |
工作温度-结 | -65°C ~ 200°C |
工厂包装数量 | 2500 |
恢复时间 | 50 ns |
最大反向漏泄电流 | 0.1 uA |
最大工作温度 | + 200 C |
最大浪涌电流 | 4 A |
最小工作温度 | - 65 C |
标准包装 | 1 |
正向电压下降 | 1.25 V |
正向连续电流 | 0.2 A |
热阻 | 350°C/W Ja |
电压-DC反向(Vr)(最大值) | 150V |
电流-平均整流(Io) | 200mA |
系列 | BAV102 |
速度 | 小信号 =< 200mA(Io),任意速度 |
配置 | Single |
零件号别名 | BAV102_NL |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
B A V 1 April 2013 0 2 — H i g BAV102 h V o High Voltage, General Purpose Diode l t a g e , G Description e n Cathode Band A general purpose diode that couples high forward con- e r ductance fast swiching speed and high blocking volt- a l ages in a glass leadless LL-34 surface mount package. P Placement of the expansion gap has no relationship to u the location of the cathode terminal which is indicated by r p the first color band. o s SOD80 e D i o Absolute Maximum Ratings(1) d e Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Units W Working Inverse Voltage 150 V IV I Average Rectified Current 200 mA O I DC Forward Current 500 mA F i Recurrent Peak Forward Current 600 mA f Pulse Width = 1.0 s 1.0 A I Non-repetitive Peak Forward Current FSM Pulse Width = 1.0 μs 4.0 A T Storage Temperature Range -65 to +200 °C STG T Operating Junction Temperature -65 to +200 °C J Note: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units Power Dissipation 500 mW P D Linear Derating Factor from T = 25°C 3.33 mW/°C A RθJA Thermal Resistance, Junction to Ambient 350 °C/W © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BAV102 Rev. 1.1.0 1
B A Electrical Characteristics V 1 Values are at TC = 25°C unless otherwise noted. 0 2 Symbol Parameter Conditions Min. Max. Units — VR Breakdown Voltage IR = 100 μA 200 V H V Forward Voltage IF = 100 mA 1.00 V ig F I = 200 mA 1.25 V h F V V = 150 V 100 nA I Reverse Current R o R VR = 150 V, TA = 150°C 100 μA lta C Total Capacitance V = 0, f = 1.0 MHz 5.00 pF g T R e t Reverse Recovery Time IF = IR = 30 mA, IRR = 1 mA 50 ns , G rr R = 100 Ω L e n e r a l P u r p o s e D i o d e © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 2
B A Typical Performance Characteristics V 1 0 2 Forward Current Derating Curve Forward Characteristics — 100 8 H nt, I[A]F HM4"EOxA4U"TxN-0ST.1IINN5KG", TC igh Curre6 COPPER PLATE 10 V d o war lt Rectified For24 MOUNTED ON PC BOARD, 1 1TP%A u l =sD e2u 5Wt yº i CdC t yh c =l e 3 0 0 μ s age, G Average 00T60AH 0z. 5R" E(1S2IS.7TmIVmE) OL5EF0A IDN DLUECNTGITVHE LOAD100 150 FORWAR 0.10.7 0.8 0.9 1 1.1 1.2 1.3 1.4 ener Ambient Temperature [oC] DC FORWARD VOLTAGE (V) al Figure 1. Forward Current Derating Curve Figure 2. Forward Charateristics P u r p Reverse Characteristics Non-Repetitive Surge Current o 10 200 s e T C = 100 º C D 160 i o 1 d 120 e 80 0.1 T A = 105 º C TA = 25 º C 40 R E VERSEC 0.0P1E0RCEN2T0 OF R4A0TED 6P0EAK R80EVER1S0E0 VO1L2T0AGE1 (4%0) FORWAR 01 2NUMBE5R OF C1Y0CLES2 0AT 60Hz50 100 Figure 3. Reverse Characteristics Figure 4. Non-Repetitive Surge Current Junction Capacitance 400 100 TA = 25 º C f = 1.0 MHz Visg = 50m Vp-p 50 C A P A C IT 10 AN 1 5 10 50 100 C REVERSE VOLTAGE (V) E Figure 5. Junction Capacitance © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 3
B A Physical Dimensions V 1 0 2 — H SOD-80 i g h V o l t a g e , G e n e r a l 0.50 2.64 REF 1.50 P 0.30 1.30 u r p o s e D i o d e 0.30 C R 0.20 3.60 3.30 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC DO-213, VARIATION AC. B) ALL DIMENSIONS ARE IN MILLIMETERS. C CORNER RADIUS IS OPTIONAL. D) DRAWING FILE NAME: SOD80A REV01 Figure 6. 2-TERMINAL, SOD-80, JEDEC DO-213AC, MINI-MELF Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packaging/tr/SOD80A_tnr.pdf. © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.1.0 4
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