BAT54XV2 Schottky Barrier Diodes These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. www.onsemi.com Features • Extremely Fast Switching Speed 30 VOLT • Low Forward Voltage − 0.35 V (Typ) @ I = 10 mA SILICON HOT−CARRIER F • S Prefix for Automotive and Other Applications Requiring Unique DETECTOR AND SWITCHING Site and Control Change Requirements; AEC−Q101 Qualified and DIODES PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 2 Compliant CATHODE ANODE 2 SOD−523 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) CASE 502 1 Rating Symbol Value Unit Reverse Voltage VR 30 V MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JVM(cid:2) (cid:2) Total Device Dissipation FR−5 Board, PD 200 mW 1 (Note 1) TA = 25°C Derate above 25°C 1.57 mW/°C JV = Device Code M = Date Code* Forward Current (DC) IF 200 Max mA (cid:2) = Pb−Free Package Non−Repetitive Peak Forward IFSM 600 mA (Note: Microdot may be in either location) Current, tp < 10 msec *Date Code orientation may vary depending up- on manufacturing location. Repetitive Peak Forward Current IFRM 300 mA Pulse Wave = 1 sec, Duty Cycle = 66% Thermal Resistance, R(cid:2)JA 635 °C/W Junction−to−Ambient ORDERING INFORMATION Junction and Storage Temperature TJ, Tstg −55 to 125 °C Device Package Shipping† Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be BAT54XV2T1G SOD−523 3000 / Tape & assumed, damage may occur and reliability may be affected. (Pb−Free) Reel 1. FR−4 Minimum Pad. BAT54XV2T5G SOD−523 8000 / Tape & (Pb−Free) Reel SBAT54XV2T1G SOD−523 3000 / Tape & (Pb−Free) Reel SBAT54XV2T5G SOD−523 8000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2018 − Rev. 12 BAT54XV2T1/D

BAT54XV2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V(BR)R 30 − − V (IR = 10 (cid:3)A) Total Capacitance CT − 7.6 10 pF (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage IR − 0.3 2.0 (cid:3)A (VR = 25 V) Forward Voltage VF V (IF = 0.1 mA) − 0.22 0.24 (IF = 1.0 mA) − 0.28 0.32 (IF = 10 mA) − 0.35 0.40 (IF = 30 mA) − 0.39 0.50 (IF = 100 mA) − 0.46 0.80 Reverse Recovery Time trr − − 5.0 ns (IF = IR = 10 mA, IR(REC) = 1.0 mA) Figure 1 820 (cid:4) +10 V 21 k00 (cid:3)H IF 0.1 (cid:3)F t tp t IF r 0.1 (cid:3)F 10% trr t DUT 50 (cid:4) Output 50 (cid:4) Input 90% Pulse Sampling iR(REC) = 1 mA Generator Oscilloscope VR IR OUTPUT PULSE INPUT SIGNAL (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k(cid:4) variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

BAT54XV2 100 1000 TA = 150°C T (mA) (cid:3)T (A) 100 TA = 125°C N 10 150°C N E E RR RR 10 TA = 85°C U U C C RD 125°C SE 1.0 WA 1.0 ER OR 85°C EV , FF 25°C −40°C −55°C , RR 0.1 TA = 25°C I I 0.1 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 T (A) 25 Based on square wave currents N F) 12 RE TJ = 25°C prior to surge p R 20 NCE ( 10 X CU TA 8 MA 15 CI E A G CAP 6 UR 10 TAL 4 RD S O A T W 5 , T 2 R C O F 0 , M 0 0 5 10 15 20 25 30 S 0.001 0.01 0.1 1 10 100 1000 F I VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms) Figure 4. Total Capacitance Figure 5. Forward Surge Current www.onsemi.com 3

BAT54XV2 PACKAGE DIMENSIONS SOD−523 CASE 502 ISSUE E −X− D NOTES: −Y− 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. E MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 1 2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO- 2Xb TRUSIONS, OR GATE BURRS. 0.08 M X Y MILLIMETERS DIM MIN NOM MAX TOP VIEW A 0.50 0.60 0.70 b 0.25 0.30 0.35 c 0.07 0.14 0.20 D 1.10 1.20 1.30 E 0.70 0.80 0.90 A HE 1.50 1.60 1.70 L 0.30 REF L2 0.15 0.20 0.25 c HE RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 1.80 2X 0.48 2X L 02X.40 PACKAGE OUTLINE DIMENSION: MILLIMETERS 2X L2 *For additional information on our Pb−Free strategy and soldering BOTTOM VIEW details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local Email: orderlit@onsemi.com Sales Representative ◊ www.onsemi.com BAT54XV2T1/D 4

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