ICGOO在线商城 > 分立半导体产品 > 二极管 - 整流器 - 单 > BAT54W-E3-08
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BAT54W-E3-08产品简介:
ICGOO电子元器件商城为您提供BAT54W-E3-08由Vishay设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BAT54W-E3-08价格参考。VishayBAT54W-E3-08封装/规格:二极管 - 整流器 - 单, 肖特基 表面贴装 二极管 30V 200mA(DC) SOD-123。您可以下载BAT54W-E3-08参考资料、Datasheet数据手册功能说明书,资料中有BAT54W-E3-08 详细功能的应用电路图电压和使用方法及教程。
BAT54W-E3-08 是 Vishay Semiconductor Diodes Division 生产的一款肖特基二极管,属于二极管 - 整流器 - 单类别。以下是其主要应用场景: 1. 电源管理:BAT54W-E3-08 适用于低电压、低功耗的电源管理电路中,例如便携式设备的电池充电保护和电源切换。其低正向压降特性有助于提高效率,减少能量损耗。 2. 信号整流:在通信设备和消费电子中,该二极管可用于高频信号的整流和检测。其快速开关速度(典型反向恢复时间为 4 ns)使其非常适合高频应用。 3. ESD 保护:由于 BAT54W 具有较低的电容和快速响应时间,它可以用作静电放电(ESD)保护元件,保护敏感的电子器件免受瞬态电压的影响。 4. 数据线保护:在 USB、HDMI 和其他高速数据接口中,该二极管可以提供过压保护,同时保持信号完整性。 5. 逆向电流阻断:在太阳能电池板和其他能量收集系统中,BAT54W 可以防止逆向电流流动,从而避免能量损失或损坏。 6. 音频和视频电路:在音视频设备中,BAT54W 可用于信号耦合和解调,确保高保真度和低失真。 7. 汽车电子:尽管其额定电压较低,但在某些低功率汽车子系统中,BAT54W 可用作保护和整流元件。 总之,BAT54W-E3-08 的小型化设计(SOD-323 封装)、低正向压降和快速开关速度,使其成为便携式设备、通信系统和消费电子产品中的理想选择。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 30V 0.2A SOD123肖特基二极管与整流器 200mA 30 Volt |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | Vishay SemiconductorsVishay Semiconductor Diodes Division |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,Vishay Semiconductors BAT54W-E3-08- |
数据手册 | |
产品型号 | BAT54W-E3-08BAT54W-E3-08 |
不同If时的电压-正向(Vf) | 800mV @ 100mA |
不同 Vr、F时的电容 | 10pF @ 1V,1MHz |
不同 Vr时的电流-反向漏电流 | 2µA @ 25V |
二极管类型 | |
产品 | Schottky Diodes |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | SOD-123 |
其它名称 | BAT54W-E3-08DKR |
包装 | Digi-Reel® |
单位重量 | 10.300 mg |
反向恢复时间(trr) | 5ns |
商标 | Vishay Semiconductors |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SOD-123 |
封装/箱体 | SOD-123 |
峰值反向电压 | 30 V |
工作温度-结 | 125°C (最大) |
工作温度范围 | - 55 C to + 125 C |
工厂包装数量 | 3000 |
恢复时间 | 5 ns |
技术 | Silicon |
最大二极管电容 | 10 pF |
最大功率耗散 | 150 mW |
最大反向漏泄电流 | 2 uA |
最大工作温度 | + 125 C |
最大浪涌电流 | 600 mA |
最小工作温度 | - 55 C |
标准包装 | 1 |
正向电压下降 | 800 mV |
正向连续电流 | 200 mA |
电压-DC反向(Vr)(最大值) | 30V |
电流-平均整流(Io) | 200mA(DC) |
系列 | BAT54 |
速度 | 小信号 =< 200mA(Io),任意速度 |
配置 | Single |
BAT54W www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc?99912 Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT54W-E3-08 or BAT54W-E3-18 BAT54W Single L4 Tape and reel BAT54W-HE3-08 or BAT54W-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 30 V RRM Forward continuous current (1) I 200 mA F Repetitive peak forward current (1) tp < 1 s, < 0.5 IFRM 300 mA Surge forward current (1) t = 10 ms I 600 mA p FSM Power dissipation (1) P 150 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) R 650 K/W thJA Maximum junction temperature T 125 °C j Storage temperature range T -65 to +150 °C stg Operating temperature range T -55 to +125 °C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.6, 23-Feb-18 1 Document Number: 85666 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reserve breakdown voltage Tested with 100 μA pulses V 30 V (BR) Leakage current (1) V = 25 V I 2 μA R R I = 0.1 mA V 240 mV F F I = 1 mA V 320 mV F F Forward voltage (1) I = 10 mA V 400 mV F F I = 30 mA V 500 mV F F I = 100 mA V 800 mV F F Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D I = 10 mA, I = 10 mA, Reserve recovery time F R t 5 ns iR = 1 mA, RL = 100 rr Note (1) Pulse test: tp < 300 μs, < 2 % TYPICAL CHARACTERISTICS (T = 25 °C, unless otherwise specified) amb 1000 1000 Tj= 125 °C mA) 100 Tj= 125 °C µA) 100 100 °C ward Current ( 101 - 40 °C verse Current ( 101 7550 °°CC I- ForF 0.1 25 °C I- ReR 0.1 25 °C 0.01 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 20 25 30 18867 VF- Forward Voltage (V) 18869 VR- Reverse Voltage (V) Fig. 1 - Typical Forward Current vs. Forward Voltage vs. Fig. 3 - Typical Reverse Current vs. Reverse Voltage vs. Various Temperatures Various Temperatures 14 F) 12 p e ( 10 c n a cit 8 a p a C 6 al c pi 4 y T - D 2 C 0 0 4 8 12 16 20 24 28 18868 VR- Reverse Voltage (V) Fig. 2 - Typical Capacitance vs. Reverse Applied Voltage Rev. 1.6, 23-Feb-18 2 Document Number: 85666 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54W www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOD-123 x. a m 4) 0 0 0. 1 ( 0. 1.35 (0.053) 1 (0.039) 0.2 (0.008) 00..4255 ((00..001180)) 0° to 8° 0.15 (0.006) 0.10 (0.004) 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 0.85 (0.033) 0.65 (0.026) 0.45 (0.018) 33..8555 ((00..115420)) 1.7 (0.067) 1.40 (0.055) 2.5 (0.098) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.6, 23-Feb-18 3 Document Number: 85666 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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