BAT54CXV3 Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount www.onsemi.com package is excellent for hand held and portable applications where space is limited. 30 VOLT Features • DUAL COMMON CATHODE Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ I = 10 mAdc SCHOTTKY BARRIER DIODES F • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 2 1 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) SC−89 Rating Symbol Value Unit CASE 463C STYLE 3 Reverse Voltage VR 30 V Forward Power Dissipation PF @ TA = 25°C 240 mW 1 2 Derate above 25°C 1.9 mW/°C ANODE ANODE Forward Current (DC) IF 200 Max mA 3 CATHODE Non−Repetitive Peak Forward IFSM 600 mA Current, tp < 10 msec Repetitive Peak Forward Current IFRM 300 mA MARKING DIAGRAM Pulse Wave = 1 sec, Duty Cycle = 66% Junction Temperature TJ −55 to 125 °C 5CM(cid:2) (cid:2) Storage Temperature Range Tstg −55 to +150 °C 1 Thermal Resistance, R(cid:2)JA 525 °C/W Junction−to−Ambient (Note 1) 5C = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code device. If any of these limits are exceeded, device functionality should not be (cid:2) = Pb−Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) 1. FR−4 board with minimum mounting pad. ORDERING INFORMATION Device Package Shipping† BAT54CXV3T1G SC−89 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 − Rev. 3 BAT54CXV3/D

BAT54CXV3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V(BR)R 30 − − V (IR = 10 (cid:3)A) Total Capacitance CT − 7.6 10 pF (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage IR − 0.5 2.0 (cid:3)Adc (VR = 25 V) Forward Voltage VF V (IF = 0.1 mA) − 0.22 0.24 (IF = 1.0 mA) − 0.29 0.32 (IF = 10 mA) − 0.35 0.40 (IF = 30 mA) − 0.41 0.50 (IF = 100 mA) − 0.52 0.80 Reverse Recovery Time trr − − 5.0 ns (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 (cid:4) +10 V 120 k0 (cid:3)H IF 0.1 (cid:3)F tr tp T IF 0.1 (cid:3)F 10% trr T DUT 50 (cid:4) OUTPUT 50 (cid:4) INPUT 90% PULSE SAMPLING iR(REC) = 1 mA GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE INPUT SIGNAL (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k(cid:4) variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

BAT54CXV3 100 125°C A) m 85°C T ( N 10 E R R U C 150°C D R A 1.0 W R O , FF 25°C −40°C −55°C I 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 1000 TA = 150°C A) 100 (cid:3)T ( TA = 125°C N E 10 R R U C 1.0 E TA = 85°C S R E 0.1 V E R I, R 0.01 TA = 25°C 0.001 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 14 F) 12 p E ( C 10 N A T CI 8 A P A 6 C L A T 4 O T , T 2 C 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance www.onsemi.com 3

BAT54CXV3 PACKAGE DIMENSIONS SC−89, 3−LEAD CASE 463C−03 ISSUE C A −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD 3 FINISH THICKNESS. MINIMUM LEAD THICKNESS B −Y− S IS THE MINIMUM THICKNESS OF BASE 1 2 MATERIAL. K 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. MILLIMETERS INCHES G DIM MIN NOM MAX MIN NOM MAX 2 PL A 1.50 1.60 1.70 0.059 0.063 0.067 D 3 PL B 0.75 0.85 0.95 0.030 0.034 0.040 C 0.60 0.70 0.80 0.024 0.028 0.031 0.08 (0.003) M X Y D 0.23 0.28 0.33 0.009 0.011 0.013 G 0.50 BSC 0.020 BSC H 0.53 REF 0.021 REF J 0.10 0.15 0.20 0.004 0.006 0.008 K 0.30 0.40 0.50 0.012 0.016 0.020 L 1.10 REF 0.043 REF M −−− −−− 10 _ −−− −−− 10 _ M N N −−− −−− 10 _ −−− −−− 10 _ J S 1.50 1.60 1.70 0.059 0.063 0.067 C STYLE 3: PIN 1.ANODE −T− SEATING 2.ANODE PLANE 3.CATHODE SOLDERING FOOTPRINT* 0.53 0.020 1.10 0.53 0.043 0.020 0.50 0.020 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com BAT54CXV3/D 4