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  • 型号: BAT120S,115
  • 制造商: NXP Semiconductors
  • 库位|库存: xxxx|xxxx
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BAT120S,115产品简介:

ICGOO电子元器件商城为您提供BAT120S,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BAT120S,115价格参考。NXP SemiconductorsBAT120S,115封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 Pair Series Connection Schottky 25V 1A (DC) Surface Mount TO-261-4, TO-261AA。您可以下载BAT120S,115参考资料、Datasheet数据手册功能说明书,资料中有BAT120S,115 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 25V 1A SC73肖特基二极管与整流器 DIODE SCHOTTKY

产品分类

二极管,整流器 - 阵列分离式半导体

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,NXP Semiconductors BAT120S,115-

数据手册

点击此处下载产品Datasheet

产品型号

BAT120S,115

PCN封装

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PCN设计/规格

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不同If时的电压-正向(Vf)

450mV @ 1A

不同 Vr时的电流-反向漏电流

1mA @ 25V

二极管类型

肖特基

二极管配置

1 对串联

产品

Schottky Diodes

产品种类

肖特基二极管与整流器

供应商器件封装

SC-73

其它名称

568-6809-1

包装

剪切带 (CT)

反向恢复时间(trr)

-

商标

NXP Semiconductors

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-261-4,TO-261AA

封装/箱体

SOT-223

峰值反向电压

25 V

工作温度范围

+ 125 C

工厂包装数量

1000

技术

Silicon

最大反向漏泄电流

1000 uA

最大工作温度

+ 125 C

最大浪涌电流

10 A

最小工作温度

- 65 C

标准包装

1

正向电压下降

400 mV

正向连续电流

1 A

热阻

100°C/W Ja

电压-DC反向(Vr)(最大值)

25V

电流-平均整流(Io)(每二极管)

1A(DC)

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Dual Series

零件号别名

BAT120S T/R

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PDF Datasheet 数据手册内容提取

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 BAT120 series Schottky barrier double diodes Product data sheet 2003 Aug 04 Supersedes data of 2001 Aug 27

NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series FEATURES PINNING • Low switching losses BAT120 PIN • Capability of absorbing very high surge current A C S • Fast recovery time 1 k a a 1 1 1 • Guard ring protected 2 n.c. n.c. n.c. • Plastic SMD package. 3 k a k 2 2 2 4 a , a k , k k , a 1 2 1 2 1 2 APPLICATIONS • Low power switched-mode power supplies • Rectification handbook, halfpage 4 • Polarity protection. DESCRIPTION Planar Schottky barrier double diodes encapsulated in a SOT223 plastic SMD package. MARKING 1 2 3 TYPE NUMBER MARKING CODE Top view MSB002 - 1 BAT120A AT120A Fig.1 Simplified outline (SOT223) and pin BAT120C AT120C configuration. BAT120S AT120S 4 4 4 1 3 1 3 1 3 2 n.c. MGL171 2 n.c. MGL172 2 n.c. MGL173 a. BAT120A. b. BAT120C. c. BAT120S. Fig.2 BAT120 diode configurations and symbols. 2003 Aug 04 2

NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode V continuous reverse voltage − 25 V R I continuous forward current − 1 A F I non-repetitive peak forward current t < 10 ms; half sinewave; − 10 A FSM p JEDEC method I non-repetitive peak reverse current t = 100 μs − 0.5 A RSM p T storage temperature −65 +150 °C stg T junction temperature − 125 °C j T operating ambient temperature −65 +125 °C amb ELECTRICAL CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode V forward voltage see Fig.3 F I = 100 mA 260 300 mV F I = 1 A 400 450 mV F I reverse current V = 20 V; note 1; see Fig.4 80 500 μA R R V = 25 V; note 1; see Fig.4 − 1 mA R V = 20 V; T = 100 °C; note 1 − 10 mA R j C diode capacitance f = 1 MHz; V = 4 V; see Fig.5 100 − pF d R Note 1. Pulse test: t = 300 μs; δ = 0.02. p THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 100 K/W th j-a Note 1. Refer to SOT223 standard mounting conditions. 2003 Aug 04 3

NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series GRAPHICAL DATA handbook1,0 h4alfpage MBL886 105 MHB970 handbook, halfpage IR (1) IF (μA) (mA) 104 (2) 103 (3) (1) 103 (2) 102 (3) (4) (4) 102 10 10 1 1 0 10 20 30 0 200 400 600 800 VR (V) VF (mV) (1) Tamb = 125 °C. (3) Tamb = 75 °C. (1) Tamb = 125 °C. (3) Tamb = 75 °C. (2) Tamb = 100 °C. (4) Tamb = 25 °C. (2) Tamb = 100 °C. (4) Tamb = 25 °C. Fig.3 Forward current as a function of forward Fig.4 Reverse current as a function of reverse voltage; typical values. voltage; typical values. 103 MBK571 handbook, halfpage Cd (pF) 102 10 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 04 4

NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE v M A b1 4 Q A A1 1 2 3 Lp e1 bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y 1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95 mm 4.6 2.3 0.2 0.1 0.1 1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT223 SC-73 99-09-13 2003 Aug 04 5

NXP Semiconductors Product data sheet Schottky barrier double diodes BAT120 series DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Aug 04 6

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp7 Date of release: 2003 Aug 04 Document order number: 9397 750 11054