BAS40-06LT1G, SBAS40-06LT1G Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. www.onsemi.com Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable 40 VOLTS applications where space is limited. SCHOTTKY BARRIER DIODE Features • Extremely Fast Switching Speed • Low Forward Voltage • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and SOT−23 (TO−236) PPAP Capable CASE 318 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS STYLE 12 Compliant CATHODE ANODE 1 MAXIMUM RATINGS 3 Rating Symbol Value Unit 2 CATHODE Reverse Voltage VR 40 V Stresses exceeding those listed in the Maximum Ratings table may damage the MARKING DIAGRAM device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS L2 M(cid:2) (cid:2) Characteristic Symbol Max Unit Forward Power Dissipation PF @ TA = 25°C 225 mW L2 = Specific Device Code Derate above 25°C 1.8 mW/°C M = Date Code* (cid:2) = Pb−Free Package Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Forward Continuous Current IFM 120 mA vary depending upon manufacturing location. Single Forward Current IFSM mA t (cid:2) 1 s 200 t (cid:2) 10 ms 600 ORDERING INFORMATION Thermal Resistance (Note 1) R(cid:2)JA 508 °C/W Device Package Shipping† Junction−to−Ambient (Note 2) 311 BAS40−06LT1G SOT−23 3,000 / 1. FR−4 @ minimum pad. (Pb−Free) Tape & Reel 2. FR−4 @ 1.0 x 1.0 in pad. SBAS40−06LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: March, 2018 − Rev. 10 BAS40−06LT1/D

BAS40−06LT1G, SBAS40−06LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V(BR)R V (IR = 10 (cid:3)A) 40 − Total Capacitance CT pF (VR = 1.0 V, f = 1.0 MHz) − 5.0 Reverse Leakage IR (cid:3)Adc (VR = 25 V) − 1.0 Forward Voltage VF mVdc (IF = 1.0 mAdc) − 380 Forward Voltage VF mVdc (IF = 10 mAdc) − 500 Forward Voltage VF Vdc (IF = 40 mAdc) − 1.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 100 100 TA = 150°C A) μA) 10 125°C T (m NT ( RREN 10 URRE 1.0 85°C U C C E D S WAR 150°C VER 0.1 R 1.0 1(cid:2)25°C RE I, FOF 2855°°CC I, R 0.01 25°C -(cid:2)40°C -(cid:2)55°C 0.1 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5.0 10 15 20 25 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 3.5 3.0 F) 2.5 p E ( C N 2.0 A T CI A 1.5 P A C , T 1.0 C 0.5 0 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance www.onsemi.com 2

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C GENERIC END VIEW MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT XXXM(cid:2) (cid:2) 1 2.90 03.X90 XXX= Specific Device Code M = Date Code (cid:2) = Pb−Free Package *This information is generic. Please refer to 3X0.80 0.95 device data sheet for actual part marking. PITCH Pb−Free indicator, “G” or microdot “ (cid:2)”, DIMENSIONS: MILLIMETERS may or may not be present. STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8: CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE 2. EMITTER 2. BASE 2. NO CONNECTION 3. COLLECTOR 3. COLLECTOR 3. CATHODE STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14: PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE 2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE 3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20: PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26: PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1.GATE PIN 1.ANODE PIN 1.CATHODE 2. SOURCE 2. OUTPUT 2. ANODE 2.DRAIN 2.CATHODE 2.ANODE 3. DRAIN 3. INPUT 3. CATHODE 3.SOURCE 3.GATE 3.NO CONNECTION STYLE 27: STYLE 28: PIN 1.CATHODE PIN 1.ANODE 2.CATHODE 2.ANODE 3.CATHODE 3.ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: TECHNICAL SUPPORT Email Requests to: orderlit@onsemi.com North American Technical Support: Europe, Middle East and Africa Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 ON Semiconductor Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ www.onsemi.com 1