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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes Product data sheet 2003 Mar 20 Supersedes data of 2001 Oct 10

NXP Semiconductors Product data sheet General purpose controlled avalanche BAS29; BAS31; BAS35 (double) diodes FEATURES PINNING • Small plastic SMD package DESCRIPTION PIN • Switching speed: max. 50 ns BAS29 BAS31 BAS35 • General application 1 anode anode cathode (k1) • Continuous reverse voltage: max. 90 V 2 not connected cathode cathode (k2) • Repetitive peak reverse voltage: max. 110 V 3 cathode common common • Repetitive peak forward current: max. 600 mA connection anode • Repetitive peak reverse current: max. 600 mA. APPLICATIONS handbook, halfpa2ge 1 • General purpose switching in e.g. surface mounted circuits. 2 1 DESCRIPTION 3 General purpose switching diodes fabricated in planar 3 technology, and encapsulated in small rectangular plastic SMD SOT23 packages. The BAS29 consists of a single a. Simplified outline. c. BAS31 diode. diode. The BAS31 has two diodes in series. The BAS35 has two diodes with a common anode. 2 1 2 1 n.c. MARKING 3 3 TYPE NUMBER MARKING CODE(1) b. BAS29 diode. d. BAS35 diode. BAS29 L20 or ∗A8 MAM233 BAS31 L21 or ∗V1 Fig.1 Simplified outline (SOT23) and symbols. BAS35 L22 or ∗V2 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. 2003 Mar 20 2

NXP Semiconductors Product data sheet General purpose controlled avalanche BAS29; BAS31; BAS35 (double) diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode V repetitive peak reverse voltage − 110 V RRM V continuous reverse voltage − 90 V R I continuous forward current single diode loaded; see Fig.2; − 250 mA F note 1 double diode loaded; see Fig.2; − 150 mA note 1 I repetitive peak forward current − 600 mA FRM I non-repetitive peak forward current square wave; T = 25 °C prior to FSM j surge; see Fig.4 t = 1 µs − 10 A t = 100 µs − 4 A t = 1 s − 0.75 A P total power dissipation T = 25 °C; note 1 − 250 mW tot amb I repetitive peak reverse current − 600 mA RRM E repetitive peak reverse energy t ≥ 50 µs; f ≤ 20 Hz; T = 25 °C − 5 mJ RRM p j T storage temperature −65 +150 °C stg T junction temperature − 150 °C j Note 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 20 3

NXP Semiconductors Product data sheet General purpose controlled avalanche BAS29; BAS31; BAS35 (double) diodes ELECTRICAL CHARACTERISTICS T = 25 °C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode V forward voltage see Fig.3 F I = 10 mA − 750 mV F I = 50 mA − 840 mV F I = 100 mA − 900 mV F I = 200 mA − 1 V F I = 400 mA − 1.25 V F I reverse current see Fig.5 R V = 90 V − 100 nA R V = 90 V; T = 150 °C − 100 µA R j V reverse avalanche breakdown I = 1 mA 120 170 V (BR)R R voltage C diode capacitance f = 1 MHz; V = 0; see Fig.6 − 35 pF d R t reverse recovery time when switched from I = 30 mA to − 50 ns rr F I = 30 mA; R = 100 Ω; measured R L at I = 3 mA; see Fig.7 R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to tie-point 360 K/W th j-tp R thermal resistance from junction to ambient note 1 500 K/W th j-a Note 1. Device mounted on an FR4 printed-circuit board. 2003 Mar 20 4

NXP Semiconductors Product data sheet General purpose controlled avalanche BAS29; BAS31; BAS35 (double) diodes GRAPHICAL DATA MBG440 MBH280 300 600 handbook, halfpage handbook, halfpage IF IF (mA) (mA) (1) 200 400 (1) (2) (3) 100 200 (2) 0 0 0 100 Tamb (oC) 200 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) Single diode loaded. (1) Tj = 150 °C; typical values. (2) Double diode loaded. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient Fig.3 Forward current as a function of forward temperature. voltage. 102 MBH327 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Mar 20 5

NXP Semiconductors Product data sheet General purpose controlled avalanche BAS29; BAS31; BAS35 (double) diodes handbook1, 0h2alfpage MBH282 handbook,4 h0alfpage MGD003 IR Cd (µA) (pF) 10 30 (1) (2) 1 20 10−1 10 10−2 0 0 100 Tj (oC) 200 0 10 20 VR (V) 30 (1) VR = 90 V; maximum values. (2) VR = 90 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. handbook, full pagewidth tr tp t D.U.T. 10% RS = 50Ω IF SAMPLING IF trr t OSCILLOSCOPE V = VR I F x RS R i = 50Ω 90% (1) VR MGA881 input signal output signal (1) IR = 3 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. 2003 Mar 20 6

NXP Semiconductors Product data sheet General purpose controlled avalanche BAS29; BAS31; BAS35 (double) diodes PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT23 TO-236AB 99-09-13 2003 Mar 20 7

NXP Semiconductors Product data sheet General purpose controlled avalanche BAS29; BAS31; BAS35 (double) diodes DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and General ⎯ Information in this document is believed to be operation of the device at these or any other conditions accurate and reliable. However, NXP Semiconductors above those given in the Characteristics sections of this does not give any representations or warranties, document is not implied. Exposure to limiting values for expressed or implied, as to the accuracy or completeness extended periods may affect device reliability. of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and Right to make changes ⎯ NXP Semiconductors conditions of commercial sale, as published at reserves the right to make changes to information http://www.nxp.com/profile/terms, including those published in this document, including without limitation pertaining to warranty, intellectual property rights specifications and product descriptions, at any time and infringement and limitation of liability, unless explicitly without notice. This document supersedes and replaces all otherwise agreed to in writing by NXP Semiconductors. In information supplied prior to the publication hereof. case of any inconsistency or conflict between information Suitability for use ⎯ NXP Semiconductors products are in this document and such terms and conditions, the latter not designed, authorized or warranted to be suitable for will prevail. use in medical, military, aircraft, space or life support No offer to sell or license ⎯ Nothing in this document equipment, nor in applications where failure or malfunction may be interpreted or construed as an offer to sell products of an NXP Semiconductors product can reasonably be that is open for acceptance or the grant, conveyance or expected to result in personal injury, death or severe implication of any license under any copyrights, patents or property or environmental damage. NXP Semiconductors other industrial or intellectual property rights. accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or Export control ⎯ This document as well as the item(s) applications and therefore such inclusion and/or use is at described herein may be subject to export control the customer’s own risk. regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. Quick reference data ⎯ The Quick reference data is an NXP Semiconductors makes no representation or extract of the product data given in the Limiting values and warranty that such applications will be suitable for the Characteristics sections of this document, and as such is specified use without further testing or modification. not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings 2003 Mar 20 8

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/05/pp9 Date of release: 2003 Mar 20 Document order number: 9397 750 10962