Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

BAS21H Single high-voltage switching diode Rev. 02 — 3 November Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features n Small and flat lead SMD plastic package n Reverse voltage: V £ 200V R 1.3 Applications n General-purpose switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current [1] - - 200 mA F V reverse voltage - - 200 V R t reverse recovery time [2] - - 50 ns rr [1] Pulse test: t £ 300m s;d£ 0.02. p [2] When switched from I =30mA to I =30mA; R =100W ; measured at I =3mA. F R L R

BAS21H NXP Semiconductors Single high-voltage switching diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 cathode [1] 1 2 2 anode 1 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS21H - plastic surface-mounted package; 2leads SOD123F 4. Marking Table 4. Marking codes Type number Marking code BAS21H B2 BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 2 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse - 250 V RRM voltage V reverse voltage - 200 V R I forward current [1] - 200 mA F I repetitive peak forward t =1ms; - 625 mA FRM p current d =0.25 I non-repetitive peak forward square wave [2] FSM current t =1m s - 9 A p t =100m s - 3 A p t =10ms - 1.7 A p P total power dissipation T £ 25(cid:176) C [3] - 375 mW tot amb T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Pulse test: t £ 300m s;d£ 0.02. p [2] T =25(cid:176) C prior to surge. j [3] Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from in free air [1][2] - - 330 K/W th(j-a) junction to ambient R thermal resistance from [3] - - 70 K/W th(j-sp) junction to solder point [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Soldering point of cathode tab. BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 3 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 7. Characteristics Table 7. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V forward voltage I =100mA [1] - - 1 V F F I =200mA [1] - - 1.25 V F I reverse current V =200V - - 100 nA R R V =200V; T =150(cid:176) C - - 100 m A R j C diode capacitance V =0V; f=1MHz - - 5 pF d R t reverse recovery time [2] - - 50 ns rr [1] Pulse test: t £ 300m s;d£ 0.02. p [2] When switched from I =30mA to I =30mA; R =100W ; measured at I =3mA. F R L R BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 4 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 600 mbg384 102 mbg703 IF IFSM (mA) (A) (1) (2) (3) 400 10 200 1 0 10- 1 0 1 2 1 10 102 103 104 VF (V) tp (m s) (1) T =150(cid:176) C; typical values Based on square wave currents. amb (2) T =25(cid:176) C; typical values T =25(cid:176) C; prior to surge amb j (3) T =25(cid:176) C; maximum values amb Fig 1. Forward current as a function of forward Fig 2. Non-repetitive peak forward current as a voltage function of pulse duration; maximum values mbg381 mbg447 102 1.0 IR Cd (m A) (pF) 10 0.8 (1) (2) 1 0.6 10- 1 0.4 10- 2 0.2 0 100 Tj ((cid:176)C) 200 0 2 4 6 VR (V) 8 (1) V =V ; maximum values f=1MHz; T =25(cid:176) C R Rmax amb (2) V =V ; typical values R Rmax Fig 3. Reverse current as a function of junction Fig 4. Diode capacitance as a function of reverse temperature voltage; typical values BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 5 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 8. Test information tr tp t D.U.T. 10 % RS = 50 W IF SAMPLING + IF trr t OSCILLOSCOPE V = VR + IF · RS Ri = 50 W 90 % (1) VR mga881 input signal output signal (1) I =3mA R Fig 5. Reverse recovery time test circuit and waveforms 9. Package outline 1.7 1.2 1.5 1.0 1 0.55 0.35 3.6 2.7 3.4 2.5 2 0.70 0.25 0.55 0.10 Dimensions in mm 04-11-29 Fig 6. Package outline SOD123F 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BAS21H SOD123F 4mm pitch, 8mm tape and reel -115 -135 [1] For further information and the availability of packing methods, seeSection15. BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 6 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 11. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2· ) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 7. Reflow soldering footprint SOD123F 12. Mounting 43.4 1.2 1.2 1.2 40 1.2 0.5 Dimensions in mm 006aaa670 PCBthickness =1.6mm Fig 8. FR4PCB, standard footprint SOD123F BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 7 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 13. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS21H_2 20061103 Product data sheet - BAS21H_1 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.1 “General description”: amended • Table 1 “Quick reference data”: I forward current table note added F • Table 5 “Limiting values”: I forward current table note added F • Table 5 “Limiting values”: I repetitive peak forward current condition amended FRM • Table 5 “Limiting values”: I non-repetitive peak forward current condition amended FSM • Table6: R thermal resistance from junction to solder point table note added th(j-sp) • Table 7 “Characteristics”: V forward voltage unit amended F • Figure2: figure title and figure note amended • Figure3: amended • Section 12 “Mounting”: added • Section 14.4 “Trademarks”: added BAS21H_1 20050411 Product data sheet - - BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 8 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 14.2 Definitions malfunctionofaNXPSemiconductorsproductcanreasonablybeexpectedto result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Draft —The document is a draft version only. The content is still under Semiconductors products in such equipment or applications and therefore internal review and subject to formal approval, which may result in such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications —Applications that are described herein for any of these informationincludedhereinandshallhavenoliabilityfortheconsequencesof products are for illustrative purposes only. NXP Semiconductors makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet —A short data sheet is an extract from a full data sheet withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended Limiting values —Stress above one or more limiting values (as defined in forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent full information. For detailed and full information see the relevant full data damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting full data sheet shall prevail. values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold 14.3 Disclaimers subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General —Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor any inconsistency or conflict between information in this document and such warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such No offer to sell or license —Nothing in this document may be interpreted information. or construed as an offer to sell products that is open for acceptance or the Right to make changes —NXPSemiconductorsreservestherighttomake grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents changes to information published in this document, including without or other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. 14.4 Trademarks Suitability for use —NXP Semiconductors products are not designed, Notice:Allreferencedbrands,productnames,servicenamesandtrademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners. space or life support equipment, nor in applications where failure or 15. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com BAS21H_2 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 — 3 November 9 of 10

BAS21H NXP Semiconductors Single high-voltage switching diode 16. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 Packing information. . . . . . . . . . . . . . . . . . . . . . 6 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 15 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 16 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 November Document identifier: BAS21H_2