BAS19L, BAS20L, BAS21L, BAS21DW5 High Voltage Switching Diode Features www.onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S and NSV Prefixes for Automotive and Other Applications HIGH VOLTAGE Requiring Unique Site and Control Change Requirements; SWITCHING DIODE AEC−Q101 Qualified and PPAP Capable SOT−23 MAXIMUM RATINGS 3 1 Rating Symbol Value Unit CATHODE ANODE Continuous Reverse Voltage VR Vdc BAS19 120 SC−88A BAS20 200 5 1 250 BAS21 CATHODE ANODE Repetitive Peak Reverse Voltage VRRM Vdc 4 3 BAS19 120 CATHODE ANODE BAS20 200 250 BAS21 MARKING DIAGRAMS Continuous Forward Current IF 200 mAdc 3 Peak Forward Surge Current IFSM 2 A 3 (1/2 Cycle, Sine Wave, 60 Hz) 1 Jx M (cid:2) Repetitive Peak Forward Current IFRM 0.6 A 2 (cid:2) (Pulse Train: TON = 1 s, TOFF = 0.5 s) 1 2 SOT−23 (TO−236) Junction and Storage Temperature TJ, Tstg −55 to +150 °C CASE 318 Range STYLE 8 Power Dissipation (Note 1) PD 385 mW 5 4 Electrostatic Discharge ESD HM < 500 V Jx M (cid:2) MM < 400 V 3 (cid:2) Stresses exceeding those listed in the Maximum Ratings table may damage the 1 1 2 3 device. If any of these limits are exceeded, device functionality should not be SC−88A (SOT−353) assumed, damage may occur and reliability may be affected. CASE 419A 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. x = P, R, or S P = BAS19L R = BAS20L S = BAS21L or BAS21DW5 M = Date Code (cid:2) = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: November, 2016 − Rev. 18 BAS19LT1/D

BAS19L, BAS20L, BAS21L, BAS21DW5 THERMAL CHARACTERISTICS (SOT−23) Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board PD 225 mW (Note 2) TDAe r=a t2e5 a°Cbove 25°C 1.8 mW/°C Thermal Resistance R(cid:2)JA Junction−to−Ambient (SOT−23) 556 °C/W Total Device Dissipation Alumina Substrate PD 300 mW (Note 3) TDAe r=a t2e5 a°Cbove 25°C 2.4 mW/°C Thermal Resistance Junction−to−Ambient R(cid:2)JA 417 °C/W Junction and Storage TJ, Tstg Temperature Range −55 to +150 °C THERMAL CHARACTERISTICS (SC−88A) Characteristic Symbol Max Unit Power Dissipation (Note 4) PD 385 mW Thermal Resistance − R(cid:2)JA Junction−to−Ambient 328 °C/W Derate Above 25°C 3.0 mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 2. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. 3. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current IR (cid:3)Adc (VR = 100 Vdc) BAS19 − 0.1 (VR = 150 Vdc) BAS20 − 0.1 (VR = 200 Vdc) BAS21 − 0.1 (VR = 100 Vdc, TJ = 150°C) BAS19 − 100 (VR = 150 Vdc, TJ = 150°C) BAS20 − 100 (VR = 200 Vdc, TJ = 150°C) BAS21 − 100 Reverse Breakdown Voltage V(BR) Vdc (IBR = 100 (cid:3)Adc) BAS19 120 − (IBR = 100 (cid:3)Adc) BAS20 200 − (IBR = 100 (cid:3)Adc) BAS21 250 − Forward Voltage VF Vdc (IF = 100 mAdc) − 1.0 (IF = 200 mAdc) − 1.25 Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

BAS19L, BAS20L, BAS21L, BAS21DW5 820 (cid:4) +10 V 2.0 k 0.1 (cid:3)F tr tp t IF 100 (cid:3)H IF 10% trr t 0.1 (cid:3)F D.U.T. 90% 50 (cid:4) OUTPUT 50 (cid:4) INPUT IR(REC) = 3.0 mA IR PULSE SAMPLING VR OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) Notes: 1. A 2.0 k(cid:4) variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 10 150°C 150°C 125°C A) 125°C μA) T (m 85°C NT ( 1.0 N 10 E RRE 55°C URR 85°C U C WARD C 25°C VERSE 0.1 55°C R 1.0 RE I, FOF -55°C I, R0.01 25°C -40°C 0.1 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 20 50 80 110 140 170 200 230 260 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. V vs. I Figure 3. I vs. V F F R R 1.6 30 pF) 1.4 Cap RENT (A) 25 BasTedJ =o n2 5s°qCua preri owr atov es ucrugrerents E ( UR ACITANC 1.2 E MAX C 20 P 1.0 G 15 A R C U E S D D O 0.8 R 10 , DID RWA C 0.6 FO 5 , M S F 0.4 I 0 0 1 2 3 4 5 6 7 8 0.001 0.01 0.1 1 10 100 1000 VR, REVERSE VOLTAGE (V) tp, PULSE ON TIME (ms) Figure 4. Capacitance Figure 5. Forward Surge Current www.onsemi.com 3

BAS19L, BAS20L, BAS21L, BAS21DW5 ORDERING INFORMATION Device Package Shipping† BAS19LT1G SOT−23 3000 / Tape & Reel (Pb−Free) BAS19LT3G SOT−23 10000 / Tape & Reel (Pb−Free) NSVBAS19LT1G* SOT−23 3000 / Tape & Reel (Pb−Free) BAS20LT1G SOT−23 3000 / Tape & Reel (Pb−Free) BAS20LT3G SOT−23 10000 / Tape & Reel (Pb−Free) NSVBAS20LT3G* SOT−23 10000 / Tape & Reel (Pb−Free) SBAS20LT1G* SOT−23 3000 / Tape & Reel (Pb−Free) BAS21LT1G SOT−23 3000 / Tape & Reel (Pb−Free) SBAS21LT1G* SOT−23 3000 / Tape & Reel (Pb−Free) BAS21LT3G SOT−23 10000 / Tape & Reel (Pb−Free) SBAS21LT3G* SOT−23 10000 / Tape & Reel (Pb−Free) BAS21DW5T1G SC−88A 3000 / Tape & Reel (Pb−Free) SBAS21DW5T1G* SC−88A 3000 / Tape & Reel (Pb−Free) SBAS21DW5T3G* SC−88A 10000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 4

BAS19L, BAS20L, BAS21L, BAS21DW5 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 8: END VIEW PIN 1. ANODE 2. NO CONNECTION 3. CATHODE RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS www.onsemi.com 5

BAS19L, BAS20L, BAS21L, BAS21DW5 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING G PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE 5 4 MOLD FLASH, PROTRUSIONS, OR GATE BURRS. S −B− INCHES MILLIMETERS 1 2 3 DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 D 5 PL 0.2 (0.008) M B M G 0.026 BSC 0.65 BSC H --- 0.004 --- 0.10 J 0.004 0.010 0.10 0.25 N K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 (cid:3) (cid:4) 0.0748 mm SCALE 20:1 inches ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BAS19LT1/D 6

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BAS19LT1G BAS19LT3G BAS20LT1G BAS21DW5T1G BAS21LT1G BAS21LT3G SBAS21DW5T1G SBAS21LT1G SBAS21LT3G NSVBAS20LT3G SBAS21DW5T3G