BAR42 BAR43 Small signal Schottky diode Datasheet - production data Description (cid:36) (cid:46)(cid:20) (cid:46) (cid:36) General purpose metal to silicon diodes featuring (cid:49)(cid:70) (cid:46)(cid:20) (cid:36) very low turn-on voltage and fast switching. (cid:36) (cid:46)(cid:21) (cid:46) (cid:46)(cid:21) Table 1. Device summary (cid:37)(cid:36)(cid:53)(cid:23)(cid:21)(cid:41)(cid:44)(cid:47)(cid:48) (cid:37)(cid:36)(cid:53)(cid:23)(cid:22)(cid:36)(cid:41)(cid:44)(cid:47)(cid:48) (cid:37)(cid:36)(cid:53)(cid:23)(cid:22)(cid:41)(cid:44)(cid:47)(cid:48) Symbol Value I 0.1 A (cid:36)(cid:20) (cid:36)(cid:21) F(AV) (cid:46) (cid:36)(cid:20) V 30 V (cid:46)(cid:21) (cid:36)(cid:20) RRM (cid:36)(cid:21) (cid:46) (cid:46)(cid:20) (cid:46)(cid:21) T 150 °C j (cid:36)(cid:20) (cid:36)(cid:21) (cid:36)(cid:21) (cid:46)(cid:20) V (max) 0.33 and 0.40 V F (cid:37)(cid:36)(cid:53)(cid:23)(cid:22)(cid:38)(cid:41)(cid:44)(cid:47)(cid:48) (cid:37)(cid:36)(cid:53)(cid:23)(cid:22)(cid:54)(cid:41)(cid:44)(cid:47)(cid:48) SOT23-3L Features • Very small conduction losses • Negligible switching losses • Low forward voltage drop • Surface mount device July 2017 DocID3288 Rev 5 1/7 This is information on a product in full production. www.st.com

Characteristics BAR42, BAR43 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak off-state voltage 30 V DRM I Continuous forward current 0.1 A F(AV) I Surge non repetitive forward current t = 10 ms sinusoidal 0.75 A FSM p P Power dissipation(1) T = 25 °C 250 mW tot amb T Maximum Storage temperature range - 65 to + 150 °C stg T Maximum operating junction temperature(2) 150 °C j T Maximum temperature for soldering during 10 s 260 °C L 1. For double diodes, P is the total dissipation of both diodes tot dPtot 1 2. < condition to avoid thermal runaway for a diode on its own heatsink. dTj Rth(j-a) Table 3. Thermal parameter Symbol Parameter Value Unit R Junction to ambient(1) 500 °C/W th(j-a) 1. Mounted on epoxy board with recommended pad layout. Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Breakdown V T = 25 °C I = 100 µA 30 V BR voltage j R I (1) Reverse leakage Tj = 25 °C V = V 500 nA R current T = 100 °C R RRM 100 µA j I = 10 mA 0.35 0.40 F BAR42 I = 50 mA 0.50 0.65 F Forward voltage V (2) T = 25 °C I = 2 mA 0.26 0.33 V F drop j BAR43 F I = 15 mA 0.45 F ALL I =100 mA 1 F 1. Pulse test: t = 5 ms, δ < 2 % p 2. Pulse test: t = 380 µs, δ < 2 % p 2/7 DocID3288 Rev 5

BAR42, BAR43 Characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Symbol Test conditions Min. Typ. Max. Unit C Junction capacitance T = 25 °C V = 1 V F = 1 MHz 7 pF j R I = 10 mA I = 10 mA C Reverse recovery time F R 5 pF T = 25 °C I = 1 mA R = 100 Ω j rr L C = 300 pF F = 45 MHz η Detection efficiency L 80 ps T = 25 °C V = 2 V R = 50 Ω j i L Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level) current (typical values, high level) IFM(A) IFM(A) 2.00E-2 5E-1 1.80E-2 1.60E-2 Tj=100°C 1E-1 1.40E-2 1.20E-2 Tj=100°C 1.00E-2 68..0000EE--33 Tj=50°C Tj=25°C 1E-2 Tj=50°C Tj=25°C 4.00E-3 2.00E-3 VFM(V) VFM(V) 0.00E+0 1E-3 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Figure 3. Reverse leakage current versus Figure 4. Reverse leakage current versus reverse voltage applied (typical values) junction temperature IR(µA) IR(µA) 1E+2 1E+4 Tj=100°C 1E+3 VR=30V 1E+1 1E+2 1E+0 1E+1 Tj=50°C 1E+0 1E-1 Tj=25°C 1E-1 VR(V) VR(V) 1E-2 1E-2 0 5 10 15 20 25 30 0 25 50 75 100 125 150 DocID3288 Rev 5 3/7 7

Characteristics BAR42, BAR43 Figure 5. Ju n ction capacitance versus reverse Figure 6. Relative variation of thermal voltage applied (typical values) impedance junction to ambient versus pulse duration C(pF) Zth(j-a)/Rth(j-a) 10 1.00 F=1MHz δ= 0.5 Tj=25°C 5 δ= 0.2 T δ= 0.1 0.10 δ=tp/T tp 2 Single pulse VR(V) epoxy FR4 with recommended pad layout,e = 35 µm tp(s) 1 0.01 Cu 1 2 5 10 20 30 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 Figure 7. Thermal resistance junction to ambient versus copper surface under each lead Rth(j-a)(°C/W) 350 EpoxyprintedcircuitboardFR4,copperthickness:35µm P=0.25W 300 250 200 S(CU)(mm²) 150 0 5 10 15 20 25 30 35 40 45 50 4/7 DocID3288 Rev 5

BAR42, BAR43 Package information 2 Package information • Epoxy meets UL94, V0 • Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. SOT23-3L dimensions Dimensions Ref. Millimeters Inches A Min. Max. Min. Max. E A 0.89 1.4 0.035 0.055 A1 0 0.1 0 0.004 e B 0.3 0.51 0.012 0.02 B e1 D c 0.085 0.18 0.003 0.007 D 2.75 3.04 0.108 0.12 S e 0.85 1.05 0.033 0.041 A1 e1 1.7 2.1 0.067 0.083 E 1.2 1.6 0.047 0.063 c L H 2.1 2.75 0.083 0.108 H L 0.6 typ. 0.024 typ. S 0.35 0.65 0.014 0.026 Figure 8. Footprint (dimensions in mm) 0.95 0.61 1.26 0.73 3.25 DocID3288 Rev 5 5/7 7

Ordering information BAR42, BAR43 3 Ordering information Table 7. Ordering information Order code Marking Package Weight Base Qty Delivery mode BAR42FILM D94 BAR43FILM D95 BAR43AFILM DB1 SOT23-3L 0.01 g 3000 Tape and reel BAR43CFILM DB2 BAR43SFILM DA5 4 Revision history Table 8. Document revision history Date Revision Changes Aug-2001 2B Last release. 16-Apr-2005 3 Layout update. No content change. 23-Apr-2014 4 Updated ECOPACK statement. 18-Jul-2017 5 Updated figure in cover page. 6/7 DocID3288 Rev 5

BAR42, BAR43 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID3288 Rev 5 7/7 7