BAR 18 BAS70-04 06 ® SMALL SIGNAL SCHOTTKY DIODES A1 K K2 K1 N.C. A A2 BAR18 BAS70-04 K A A1 K1 A2 K2 BAS70-05 BAS70-06 DESCRIPTION Lowturn-onandhighbreakdownvoltagediodesin- tendedforultrafastswitchingandUHFdetectorsin SOT-23 (Plastic) hybrid micro circuits. ABSOLUTE RATINGS(limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 70 V IF Continuous forward current 70 mA Ptot Power dissipation (note 1) Tamb = 25°C 250 mW Tstg Maximum storage temperature range - 65 to +150 °C Tj Maximum operating junction temperature * 150 (cid:176) C TL Maximum temperature for soldering during 10s 260 (cid:176) C Note 1:for double diodes, Ptot is the total dissipation of both diodes dPtot 1 * : < thermal runaway condition for a diode on its own heatsink dTj Rth(j- a) THERMALRESISTANCE Symbol Parameter Value Unit Rth (j-a) Junction to ambient (*) 500 °C/W (*) Mounted on epoxy board with recommended pad layout. December 2001 - Ed: 3A 1/4

BAR 18 / BAS70-04 06 ELECTRICALCHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tj = 25°C I = 10m A 70 V R VF* Tj= 25°C I = 1mA 410 mV F IR** Tj= 25°C V = 50V 200 nA R Pulse test: * tp = 380m s,d < 2% ** tp = 5 ms,d < 2% DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C Tj = 25°C V = 0V F = 1MHz 2 pF R t * Tj = 25(cid:176) C I = 5mA Krakauer Method 100 ps F * Effective carrier life time. Fig. 1-1: Forward voltage drop versus forward Fig. 1-2: Forward voltage drop versus forward current(lowlevel). current(highlevel). IFM(A) IFM(A) 2.0E-2 7E-2 1.8E-2 Tj=100°C Typical values 1.6E-2 Tj=100°C Typical values 1.4E-2 1E-2 1.2E-2 Tj=25°C Maximum values Tj=25°C 1.0E-2 Maximum values 8.0E-3 6.0E-3 TypTicj=a2l v5a°Clues 1E-3 TypTicj=a2l v5a°Clues 4.0E-3 2.0E-3 VFM(V) VFM(V) 0.0E+0 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2/4

BAR 18 / BAS70-04 06 Fig. 2: Reverse leakage current versus reverse Fig. 3: Reverse leakage current versus junction voltage applied (typical values). temperature (typical values) IR(µA) IR(µA) 1E+1 5E+2 Tj=100°C VR=70V 1E+2 1E+0 1E+1 1E-1 1E+0 Tj=25°C 1E-2 1E-1 VR(V) Tj(°C) 1E-3 1E-2 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 25 50 75 100 125 150 Fig.4:Junctioncapacitanceversusreversevoltage Fig. 5: Relative variation of thermal impedance applied(typicalvalues). junctiontoambientversuspulseduration(alumine substrate 10mm*8mm*0.5mm). C(pF) Zth(j-a)/Rth(j-a) 2.0 1.00 F=1MHz Tj=25°C 1.0 d = 0.5 d = 0.2 0.10 d = 0.1 T VR(V) Single pulse tp(s) d =tp/T tp 0.1 0.01 1 10 100 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 Fig.6:Thermalresistancejunctiontoambientver- suscoppersurfaceundereachlead(Epoxyprinted circuit board FR4, copper thickness:35m m). Rth(j-a) (°C/W) 350 P=0.25W 300 250 200 S(Cu) (mm²) 150 0 5 10 15 20 25 30 35 40 45 50 3/4

BAR 18 / BAS70-04 06 PACKAGE MECHANICALDATA SOT23 (Plastic) E A DIMENSIONS REF. Millimeters Inches e Min. Max. Min. Max. B e1 D A 0.89 1.4 0.035 0.055 A1 0 0.1 0 0.004 S B 0.3 0.51 0.012 0.02 A1 c 0.085 0.18 0.003 0.007 D 2.75 3.04 0.108 0.12 e 0.85 1.05 0.033 0.041 L e1 1.7 2.1 0.067 0.083 H E 1.2 1.6 0.047 0.063 H 2.1 2.75 0.083 0.108 L 0.6 typ. 0.024 typ. c S 0.35 0.65 0.014 0.026 FOOTPRINT DIMENSIONS 0.9 0.9 0.035 0.035 1.10.043 1.9 2.350.92 1.45 0.075 mm 0.037 inch 1.10.043 0.9 0.035 Ordering type Marking Package Weight Base qty Delivery mode BAR18 D76 SOT-23 0.01g 3000 Tape & reel BAS70-04 D96 SOT-23 0.01g 3000 Tape & reel BAS70-05 D97 SOT-23 0.01g 3000 Tape & reel BAS70-06 D98 SOT-23 0.01g 3000 Tape & reel n Epoxy meets UL94,V0 Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswritten approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4

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