BAR50... Silicon PIN Diodes • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 10 MHz up to 6 GHz • Especially useful as antenna switch in mobile communication • Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) • Low forward resistance • Very low harmonic distortion • Pb-free (RoHS compliant) package • Qualified according AEC Q1011) BAR50-02L BAR50-02V BAR50-03W (cid:1) (cid:2) Type Package Configuration L (nH) Marking S BAR50-02L* TSLP-2-1 single, leadless 0.4 AB BAR50-02V SC79 single 0.6 a BAR50-03W SOD323 single 1.8 blue A 1*BAR50-02L is not qualified according AEC Q101 1 2011-07-18

BAR50... Maximum Ratings at T = 25°C, unless otherwise specified A Parameter Symbol Value Unit Diode reverse voltage V 50 V R Forward current I 100 mA F Total power dissipation P mW tot BAR50-02L, T ≤ 130°C 250 S BAR50-02V, T ≤ 120°C 250 S BAR50-03W, T ≤ 115°C 250 S Junction temperature T 150 °C j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) R K/W thJS BAR50-02L ≤ 80 BAR50-02V ≤ 120 BAR50-03W ≤ 140 Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I - - 50 nA R V = 50 V R Forward voltage V - 0.95 1.1 V F I = 50 mA F 1For calculation of R please refer to Application Note Thermal Resistance thJA 2 2011-07-18

BAR50... Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance C pF T V = 1 V, f = 1 MHz - 0.24 0.5 R V = 5 V, f = 1 MHz - 0.2 0.4 R V = 0 V, f = 100 MHz - 0.2 - R V = 0 V, f = 1...1.8 GHz, BAR50-02L - 0.1 - R V = 0 V, f = 1...1.8 GHz, all other - 0.15 - R Reverse parallel resistance R kΩ P V = 0 V, f = 100 MHz - 25 - R V = 0 V, f = 1 GHz - 6 - R V = 0 V, f = 1.8 GHz - 5 - R Forward resistance r Ω f I = 0.5 mA, f = 100 MHz - 25 40 F I = 1 mA, f = 100 MHz - 16.5 25 F I = 10 mA, f = 100 MHz - 3 4.5 F Charge carrier life time τ - 1100 - ns rr I = 10 mA, I = 6 mA, measured at I = 3 mA, F R R R = 100 Ω L I-region width W - 56 - µm I Insertion loss1) I dB L I = 3 mA, f = 1.8 GHz - 0.56 - F I = 5 mA, f = 1.8 GHz - 0.4 - F I = 10 mA, f = 1.8 GHz - 0.27 - F Isolation1) I SO V = 0 V, f = 0.9 GHz - 24.5 - R V = 0 V, f = 1.8 GHz - 20 - R V = 0 V, f = 2.45 GHz - 18 - R V = 0 V, f = 5.6 GHz - 12 - R 1BAR50-02L in series configuration, Z = 50 Ω 3 2011-07-18

BAR50... Diode capacitance C = ƒ (V ) Reverse parallel resistance R = ƒ(V ) T R P R f = Parameter f = Parameter 10 3 0.5 KOhm pF 0.4 10 2 100 MHz T 0.35 p C R 1 GHz 0.3 10 1 1 MHz 1.8 GHz 100 MHz 0.25 1 GHz 1.8 GHz 0.2 10 0 0.15 0.1 10 -1 0 2 4 6 8 10 12 14 16 V 20 0 2 4 6 8 10 12 14 16 V 20 VR VR Forward resistance r = ƒ (I ) Forward current I = ƒ (V ) f F F F f = 100 MHz T = Parameter A 10 4 10 0 A Ohm 10 -1 10 3 10 -2 rf 10 2 IF 10 -3 -40 °C 10 1 25 °C 10 -4 85 °C 125 °C 10 0 10 -5 10 -1 10 -6 10 -2 10 -1 10 0 10 1 mA 10 2 0 0.2 0.4 0.6 0.8 V 1.2 IF VF 4 2011-07-18

BAR50... Forward current I = ƒ (T ) Forward current I = ƒ (T ) F S F S BAR50-02L BAR50-02V 120 120 mA mA 100 100 90 90 80 80 F F I I 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0 15 30 45 60 75 90 105 120 °C 150 0 15 30 45 60 75 90 105 120 C° 150 T T S S Forward current I = ƒ (T ) Permissible Pulse Load R = ƒ (t ) F S thJS p BAR50-03W BAR50-02L 10 2 120 mA 100 mA 90 S 80 J h Rt D = 0.5 F 70 0.2 I 0.1 60 10 1 0.05 0.02 50 0.01 0.005 40 0 30 20 10 00 15 30 45 60 75 90 105 120 C° 150 10 01 0 -6 10 -5 10 -4 10 -3 10 -2 °C 10 0 t TS p 5 2011-07-18

BAR50... Permissible Pulse Load Permissible Pulse Load R = ƒ (t ) thJS p I / I = ƒ (t ) BAR50-02V Fmax FDC p BAR50-02L 10 1 10 3 D = 0 C D 0.005 10 2 / IaxF 00..0012 S m 0.05 hJ IF 0.1 Rt 0.5 0.2 mA 0.5 10 1 0.2 0.1 0.05 0.02 0.01 0.005 10 0 0 10 0 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 °C 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Pulse Load Permissible Pulse Load R = ƒ (t ) thJS p I / I = ƒ (t ) BAR50-03W Fmax FDC p BAR50-02V 10 1 10 3 DC 10 2 F /I ax S m 0 hj F Rt I 0.005 0.5 0.01 10 1 0.2 0.02 0.1 0.05 0.05 0.1 0.02 0.2 0.01 0.5 0.005 10 0 0 10 0 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 2011-07-18

BAR50... Permissible Pulse Load Insertion loss I = -|S |2 = ƒ(f) L 21 I / I = ƒ (t ) I = Parameter Fmax FDC p F BAR50-03W BAR50-02L in series configuration, Z = 50Ω 10 1 0 dB 100 mA C D -0.2 F /Iax 2|1 10 mA m S2 -0.3 IF 0 | 0.005 5 mA 0.1 -0.4 0.2 0.5 1 -0.5 2 3 mA 5 -0.6 -0.7 10 01 0 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 -0.80 1 2 3 4 GHz 6 tp f Isolation I = -|S |2 = ƒ(f) SO 21 V = Parameter R BAR50-02L in series configuration, Z = 50Ω 0 dB 2 |1 -10 2 S | -15 -20 -25 0 V 1 V 10 V -30 0 1 2 3 4 GHz 6 f 7 2011-07-18

Package SC79 BAR50... 8 2011-07-18

BAR50... Date Code marking for discrete packages with one digit (SCD80, SC79, SC751)) CES-Code Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 01 a p A P a p A P a p A P 02 b q B Q b q B Q b q B Q 03 c r C R c r C R c r C R 04 d s D S d s D S d s D S 05 e t E T e t E T e t E T 06 f u F U f u F U f u F U 07 g v G V g v G V g v G V 08 h x H X h x H X h x H X 09 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 1) New Marking Layout for SC75, implemented at October 2005. . 9 2011-07-18

Package SOD323 BAR50... 10 2011-07-18

Package TSLP-2-1 BAR50... 11 2011-07-18

BAR50... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2011-07-18

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