BAP55LX DFN1006D-2 Silicon PIN diode Rev. 4 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits  High speed switching for RF signals  Low diode capacitance  Low forward resistance  Very low series inductance  For applications up to 3GHz 1.3 Applications  RF attenuators and switches 2. Pinning information Table 1. Discrete pinning Pin Description Simplified outline Symbol 1 cathode [1] 2 anode 1 2 Transparent sym006 top view [1] The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BAP55LX DFN1006D-2 leadless ultra small plastic package; 2 terminals; SOD882D body10.60.4mm

BAP55LX NXP Semiconductors Silicon PIN diode 4. Marking Table 3. Marking codes Type number Marking code[1] BAP55LX 1111 1101 [1] For SOD882D binary marking code description, see Figure1. 4.1 Binary marking code description CATHODE BAR READING DIRECTION VENDOR CODE READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac477 Fig 1. SOD882D binary marking code description example 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 50 V R I forward current - 100 mA F P total power dissipation T = 90 C - 135 mW tot sp T storage temperature 65 +150 C stg T junction temperature 65 +150 C j 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction 78 K/W th(j-sp) to solder point BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 2 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 7. Characteristics Table 6. Characterist ics T = 25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V forward voltage I =50mA - 0.95 1.1 V F F I reverse current V =20V - - 10 nA R R V =50V - - 100 nA R C diode capacitance seeFigure3; f=1MHz; d V =0V - 0.28 - pF R V =1V - 0.23 - pF R V =20V - 0.18 0.28 pF R r diode forward resistance seeFigure4; f=100MHz; D I =0.5mA - 3.3 4.5  F I =1mA - 2.2 3.3  F I =10mA - 0.8 1.2  F I =100mA - 0.5 0.8  F ISL isolation seeFigure5;V =0V; R f=900MHz - 19 - dB f=1800MHz - 14 - dB f=2450MHz - 12 - dB L insertion loss seeFigure6;I =0.5mA; ins F f=900MHz - 0.24 - dB f=1800MHz - 0.25 - dB f=2450MHz - 0.26 - dB L insertion loss seeFigure6;I =1mA; ins F f=900MHz - 0.17 - dB f=1800MHz - 0.18 - dB f=2450MHz - 0.19 - dB L insertion loss seeFigure6;I =10mA; ins F f=900MHz - 0.08 - dB f=1800MHz - 0.09 - dB f=2450MHz - 0.10 - dB L insertion loss seeFigure6;I =100mA; ins F f=900MHz - 0.05 - dB f=1800MHz - 0.07 - dB f=2450MHz - 0.08 - dB  charge carrier life time when switched from I =10mA to 0.225 0.27 - s L F I =6mA; R =100; measured at R L I =3mA R L series inductance I =100mA; f=100MHz - 0.4 - nH S F BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 3 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 001aan470 0.5 Cd (pF) 0.4 0.3 0.2 0.1 0 0 1000 2000 3000 4000 f (MHz) VR=0 V; Tj=25C. Fig 2. Diode capacitance as a function of frequency; typical values 400 001aag762 102 001aag763 Cd (fF) rD (Ω) 300 10 200 1 100 0 10−1 0 5 10 15 20 10−1 1 10 102 VR (V) If (mA) f=1MHz; Tj=25C. f=100MHz; Tj=25C. Fig 3. Diode capacitance as a function of reverse Fig 4. Forward resistance as a function of forward voltage; typical values current; typical values BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 4 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 001aag764 001aag765 0 0 (1) ISL Lins (dB) (dB) (3) (2) −0.2 −10 (4) −0.4 −20 −0.6 −30 −0.8 −40 −1.0 0 1000 2000 3000 0 1000 2000 3000 f (MHz) f (MHz) Tamb=25C Tamb=25C Diode zero biased and inserted in series with a 50 (1) IF=100mA stripline circuit (2) IF=10mA (3) I =1mA F (4) IF=0.5mA Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network Fig 5. Isolation of the diode as a function of Fig 6. Insertion loss of the diode as a function of frequency; typical values frequency; typical values BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 5 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 7.1 S-parameters 7.1.1 Diode in series configuration 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 (5) (6) 0.2 (7) 180° 0 0.2 0.5 ((23)) 2 5 10 0° 0 (4) −0.2 −5 (1) −0.5 −2 −135° −45° −1 1.0 −90° 001aan345 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0 mA (2) I = 0.1 mA F (3) IF = 0.5 mA (4) IF = 1 mA (5) I = 5mA F (6) IF = 10 mA (7) IF = 100 mA Fig 7. Input reflection coefficient (S ); typical values 11 BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 6 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 (5) (6) 0.2 (7) 180° 0 0.2 0.5 ((23)) 2 5 10 0° 0 (4) −0.2 −5 (1) −0.5 −2 −135° −45° −1 1.0 −90° 001aan347 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0 mA (2) I = 0.1 mA F (3) IF = 0.5 mA (4) IF = 1 mA (5) I = 5mA F (6) IF = 10 mA (7) IF = 100 mA Fig 8. Output reflection coefficient (S ); typical values 22 BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 7 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 90° 135° 45° (1) (2) (3) 180°−1.0 −0.8 −0.6 −0.4 −0.2 0 (4) 0° (5) (6) (7) −135° −45° −90° 001aan346 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0 mA (2) I = 0.1 mA F (3) IF = 0.5 mA (4) IF = 1 mA (5) I = 5mA F (6) IF = 10 mA (7) IF = 100 mA Fig 9. Forward transmission coefficient (S ); typical values 21 BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 8 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 7.1.2 Diode in parallel configuration 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 (1) +5 (2) (3) 0.2 (4) (5) 180° 0 0.2 (6)0.5 1 2 5 10 0° 0 −0.2 −5 −0.5 −2 −135° −45° −1 1.0 −90° 001aan342 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0.1 mA (2) IF = 0.5 mA (3) I = 1 mA F (4) IF = 5mA (5) IF = 10 mA (6) I = 100 mA F Fig 10. Input reflection coefficient (S ); typical values 11 BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 9 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 (1) +5 (2) (3) 0.2 (4) 180° 0 0.2 ((56)) 0.5 1 2 5 10 0° 0 −0.2 −5 −0.5 −2 −135° −45° −1 1.0 −90° 001aan344 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0.1 mA (2) I = 0.5 mA F (3) IF = 1 mA (4) IF = 5mA (5) I = 10 mA F (6) IF = 100 mA Fig 11. Output reflection coefficient (S ); typical values 22 BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 10 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 90° 135° 45° (1) (2) −1.0 −0.8 −0.6 −0.4 −0.2 0 (3) 180° (4) 0° (5) (6) −135° −45° −90° 001aan343 Z0 = 50 ; f = 100 MHz to 10 GHz. (1) IF = 0.1 mA (2) I = 0.5 mA F (3) IF = 1 mA (4) IF = 5mA (5) I = 10 mA F (6) IF = 100 mA Fig 12. Forward transmission coefficient (S ); typical values 21 BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 11 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 8. Package outline DFN1006D-2: Leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm SOD882D (2x) L1 w A (2x) 1 2 b (2x) (2x) w B e A A1 y E A D (2) B Dimensions 0 0.5 1 mm scale Unit A(1) A1 b D E e L1 w y max 0.4 0.04 0.55 0.65 1.05 0.30 0.1 0.03 mm nom 0.50 0.60 1.00 0.65 0.25 min 0.45 0.55 0.95 0.22 Note 1. Dimension including plating thickness. 2. The marking bar indicates the cathode (if applicable). sod882d_po Outline References European Issue date version IEC JEDEC JEITA projection 10-09-27 SOD882D 12-05-01 Fig 13. Package outline SOD882D (DFN1006D-2) BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 12 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 9. Abbreviations Table 7. Abbreviations Acronym Description PIN P-type, Intrinsic, N-type SMD Surface Mounted Device RF Radio Frequency 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BAP55LX v.4 20130806 Product data sheet - BAP55LX v.3 Modifications: • Section1.1 on page1: Changed package to SOD882D • Table1 on page1: Changed simplified outline to SOD882D • Table2 on page1: Changed package to SOD882D • Section4 on page2: Update ‘Marking’ section • Section8 on page12: Changed package to SOD882D BAP55LX v.3 20110113 Product data sheet - BAP55LX v.2 BAP55LX v.2 20101216 Product data sheet - BAP55LX v.1 BAP55LX v.1 20070730 Product data sheet - - BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 13 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 14 of 16

BAP55LX NXP Semiconductors Silicon PIN diode Export control — This document as well as the item(s) described herein NXP Semiconductors’ specifications such use shall be solely at customer’s may be subject to export control regulations. Export might require a prior own risk, and (c) customer fully indemnifies NXP Semiconductors for any authorization from competent authorities. liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ Non-automotive qualified products — Unless this data sheet expressly standard warranty and NXP Semiconductors’ product specifications. states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested Translations — A non-English (translated) version of a document is for in accordance with automotive testing or application requirements. NXP reference only. The English version shall prevail in case of any discrepancy Semiconductors accepts no liability for inclusion and/or use of between the translated and English versions. non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in 11.4 Trademarks automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the Notice: All referenced brands, product names, service names and trademarks product for such automotive applications, use and specifications, and (b) are the property of their respective owners. whenever customer uses the product for automotive applications beyond 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BAP55LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 6 August 2013 15 of 16

BAP55LX NXP Semiconductors Silicon PIN diode 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4.1 Binary marking code description. . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 S-parameters . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.1.1 Diode in series configuration . . . . . . . . . . . . . . 6 7.1.2 Diode in parallel configuration . . . . . . . . . . . . . 9 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 12 9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12 Contact information. . . . . . . . . . . . . . . . . . . . . 15 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 6 August 2013 Document identifier: BAP55LX

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