BA157, BA158, BA159D, BA159 www.vishay.com Vishay General Semiconductor Fast Switching Plastic Rectifier FEATURES • Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance DO-204AL (DO-41) please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. PRIMARY CHARACTERISTICS Note I 1.0 A F(AV) • These devices are not AEC-Q101 qualified. V 400 V, 600 V, 800 V, 1000 V RRM IFSM 20 A MECHANICAL DATA t 150 ns, 250 ns, 500 ns rr Case: DO-204AL, molded epoxy body IR 5.0 μA Molding compound meets UL 94 V-0 flammability rating VF 1.3 V Base P/N-E3 - RoHS-compliant, commercial grade TJ max. 125 °C Terminals: Matte tin plated leads, solderable per Package DO-204AL (DO-41) J-STD-002 and JESD 22-B102 Diode variation Single die E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL BA157 BA158 BA159D BA159 UNIT Maximum repetitive peak reverse voltage V 400 600 800 1000 V RRM Maximum RMS voltage V 280 420 560 700 V RMS Maximum DC blocking voltage V 400 600 800 1000 V DC Maximum average forward rectified current I 1.0 A 0.375" (9.5 mm) lead length at T = 55 °C F(AV) A Peak forward surge current 10 ms single half I 20 A sine-wave superimposed on rated load FSM Maximum operation junction temperature T - 65 to + 125 °C J Maximum storage temperature T - 65 to + 150 °C STG ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BA157 BA158 BA159D BA159 UNIT Maximum instantaneous 1.0 A V 1.3 V forward voltage F Maximum DC reverse current T = 25 °C I 5.0 μA at rated DC blocking voltage A R Maximum reverse recovery time I = 0.5 A, I = 1.0 A, I = 0.25 A t 150 250 500 ns F R rr rr Typical junction capacitance 4.0 V, 1 MHz C 12 pF J Revision: 24-Jul-13 1 Document Number: 88536 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BA157, BA158, BA159D, BA159 www.vishay.com Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BA158-E3/54 0.33 54 5500 13" diameter paper tape and reel BA158-E3/73 0.33 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 1.0 100 60 Hz ent (A) 0.8 Resistive or Inductive Load urrent (A) 10 d Curr 0.6 ward C PulseT WJ i=d t2h5 = ° C300 μs war For 1 1 % Duty Cycle or 0.4 s F u Average 0.2 stantaneo 0.1 0.375" (9.5 mm) Lead Length n I 0 0.01 0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 20 100 Current (A) 15 8.3 ms SinTgJ l=e H55a l°f CSine-Wave Current (μA) 10 TJ = 100 °C Surge 10 everse 1 d R war ous TJ = 25 °C Peak For 5 stantane 0.1 n I 0 0.01 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Revision: 24-Jul-13 2 Document Number: 88536 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BA157, BA158, BA159D, BA159 www.vishay.com Vishay General Semiconductor 100 100 TJ = 25 °C W) pF) Vsfi g= = 1 5.00 MmHVzp-p e (°C/ e ( nc c a 10 n d a e cit mp apa 10 al I C m Junction sient Ther 1 n a Tr 1 0.1 0.1 1 10 100 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. Revision: 24-Jul-13 3 Document Number: 88536 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: BA157-E3/54 BA157-E3/73 BA158-E3/53 BA158-E3/54 BA159-E3/51 BA159-E3/54 BA159-E3/73