B340LB www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low profile package • Ideal for automated placement • Low power loss, high efficiency Available • Very low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection I 3.0 A F(AV) application. V 40 V RRM MECHANICAL DATA I 100 A FSM V at I = 3.0 A 0.34 V Case: SMB (DO-214AA) F F Molding compound meets UL 94 V-0 flammability rating T max. 150 °C J Base P/N-E3 - RoHS-compliant, commercial grade Package SMB (DO-214AA) Base P/N-M3 - halogen-free, RoHS-compliant, commercial Diode variations Single grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL B340LB UNIT Device marking code B34 Maximum repetitive peak reverse voltage V 40 RRM Maximum RMS voltage V 28 V RMS Maximum DC blocking voltage V 40 DC Maximum average forward rectified current at T (fig. 1) I 3.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 100 superimposed on rated load FSM Voltage rate of change (rated V ) dV/dt 10 000 V/μs R Operating junction and storage temperature range T , T -65 to +150 °C J STG Revision: 07-Jul-17 1 Document Number: 89039 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

B340LB www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT T = 25 °C 0.43 0.45 J Maximum instantaneous forward voltage V (1) 3.0 A V F T = 125 °C 0.34 0.38 J T = 25 °C - 0.4 J Maximum reverse current at I (2) Rated V mA R R T = 125 °C 26 40 J Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL B340LB UNIT RθJA 70 Typical thermal resistance °C/W RθJL 25 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE DO-214AA (SMB) B340LB-E3/52T 0.096 52T 750 7" diameter tape and reel DO-214AA (SMB) B340LB-E3/5BT 0.096 5BT 3200 13" diameter tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 3.0 1.5 Resistive or Inductive Load D = 0.3 D = 0.5 D = 0.8 )A (ntreurC 22..05 Loss (W) 01..92 D = 0.1 D = 0.2 rda 1.5 wer D = 1.0 w o orF e P 0.6 e ga 1.0 erag T rev Av 0.3 A 0.5 D = t/T t p p 0 0 0 25 50 75 100 125 150 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Lead Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 07-Jul-17 2 Document Number: 89039 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

B340LB www.vishay.com Vishay General Semiconductor 120 1000 A) Current (A) 18000 Current (m 10100 TJ = 150 °C Surge 60 everse 1 TJ = 125 °C d R orwar 40 eous 0.1 F n eak 20 anta 0.01 TJ = 25 °C P st n I 0 0.001 1 10 100 10 20 30 40 50 60 70 80 90 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Reverse Characteristics 100 1000 A) ent ( )F d Curr 10 TJ = 150 °C p( ecn war atic s For TJ = 125 °C apaC ntaneou 1 TJ = 25 °C noitcnu a J st n I 0.1 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.086(2.20) 0.155( 3.94) 0.085 (2.159) 0.077(1.95) 0.130(3.30) MAX. 0.086 (2.18) MIN. 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.060 (1.52) 0.096(2.44) MIN. 0.084(2.13) 0.220 REF. 0.060(1.52) 0.008(0.2) 0.030(0.76) 0(0) 0.220(5.59) 0.205(5.21) Revision: 07-Jul-17 3 Document Number: 89039 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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