Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational · Large Signal Voltage Gain: 110dB Typical amplifier. It is specifically designed for audio systems · Low Input Noise Voltage: 0.7μV (RIAA) RMS to improve tone control; it can also be used in pre- Typical amplifier, industrial measurement tools and applica- · Wide Gain Bandwidth Product: 15MHz at 10KHz tions where gain and phase matched channels are man- Typical datory. · Low Distortion: 0.0005% Typical The IC features internal frequency compensation, low · Slew Rate: 7V/μs Typical noise, low distortion, high gain and high bandwidth. The AZ4580 can operate under dual power supply Applications voltage up to ±18V or single power supply up to 36V. · Audio AC-3 Decoder System The AZ4580 is available in DIP-8, SOIC-8 and · Audio Amplifier TSSOP-8 packages. SOIC-8 DIP-8 TSSOP-8 Figure 1. Package Types of AZ4580 Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 1

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Pin Configuration M/G Package P Package (SOIC-8/TSSOP-8) (DIP-8) OUTPUT 1 1 8 VCC OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1- 2 7 OUTPUT 2 INPUT 1+ 3 6 INPUT 2- INPUT 1+ 3 6 INPUT 2- VEE 4 5 INPUT 2+ VEE 4 5 INPUT 2+ Figure 2. Pin Configuration of AZ4580 Pin Description Pin No. Function Pin No. Function Pin No. Function Pin No. Function 1 OUTPUT 1 2 INPUT 1- 3 INPUT 1+ 4 VEE 5 INPUT 2+ 6 INPUT 2- 7 OUTPUT 2 8 VCC Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 2

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Functional Block Diagram 8 VCC 2, 6 1, 7 INPUT- OUTPUT 3, 5 INPUT+ 4 VEE Figure 3. Representative Schematic Diagram of AZ4580 (Each Amplifier) Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 3

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Ordering Information AZ4580 - E1: Lead Free Circuit Type G1: Green Package TR: Tape and Reel Blank: Tube M: SOIC-8 P: DIP-8 G: TSSOP-8 Temperature Part Number Marking ID Package Packing Type Range Lead Free Green Lead Free Green AZ4580M-E1 AZ4580M-G1 4580M-E1 4580M-G1 Tube SOIC-8 -40 to 85oC AZ4580MTR-E1 AZ4580MTR-G1 4580M-E1 4580M-G1 Tape & Reel DIP-8 -40 to 85oC AZ4580P-E1 AZ4580P-G1 AZ4580P-E1 AZ4580P-G1 Tube TSSOP-8 -40 to 85oC AZ4580GTR-E1 AZ4580GTR-G1 EG80 GG80 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 4

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Absolute Maximum Ratings (Note 1) Parameter Smbol Value Unit VCC + 20 Power Supply Voltage V VEE - 20 Input Voltage VI ±15 V Differential Input Voltage VID ±30 V Operating Junction Temperature TJ 150 oC Storage Temperature Range TSTG -65 to 150 oC Lead Temperature (Soldering 10s) TL 260 oC TSSOP-8 400 Power Dissipation (TA=25oC) PD SOIC-8 500 mW DIP-8 800 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi- cated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage ± 2 ± 18 V Operating Temperature Range -40 85 oC Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 5

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Electrical Characteristics Operating Conditions: V =+15V, V =- 15V, T =25oC unless otherwise specified. CC EE A Parameter Conditions Min Typ Max Unit Supply Current no load 4 7 mA Input Offset Voltage R ≤10KΩ 0.5 3 mV S Input Offset Current VCM=0V 5 100 nA Input Bias Current VCM=0V 150 500 nA Input Common Mode Voltage Range ±12 ±13.5 V Common Mode Rejection Ratio V =0V to V -1.5V, R ≤10KΩ 80 110 dB CM CC S Large Signal Voltage Gain R =2KΩ, V =±10V 90 110 dB L O Power Supply Rejection Ratio R ≤10KΩ 80 110 dB S Output Sink Current V-=1V, V+=0V, VO=2V 80 mA Output Source Current V+=1V, V-=0V, VO=2V 45 mA Slew Rate R ≥2KΩ 7 V/μS L Gain Bandwidth Product RL=2KΩ, f=10KHz 15 MHz A =20dB, V =5V Total Harmonic Distortion V O 0.0005 % R =2KΩ, f=1KHz L Equivalent Input Noise Voltage RIAA RS=50Ω, 30KHz LPF 0.7 μVRMS Thermal Resistance DIP-8 43 (Junction to Case) oC/W SOIC-8 63 Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 6

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Typical Performance Characteristics 120 30 110 V) n (dB) 10900 VRCL=C=2 K1Ω5V, T, VA=E2E=5 o-C15V Swing ( 25 VCC= 15V, VEE= -15V ai 80 e 20 R=2KΩ, T=25oC ge G 70 oltag L A p Volta 5600 utput V 15 o O Lo 40 m 10 n u e 30 m Op 20 axi 5 M 10 0 0 1 10 100 1k 10k 100k 1M 10M 100 1k 10k 100k 1M 10M Frequency (Hz) Frequency (Hz) Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency 30 20 wing (V) 2268 ge Density 15 mum Output Voltage S 1122268024 VTAC=C=2 51o5CV, VEE= -15V, alent Input Noise Volta0.5(nV/(Hz)) 105 VRCSC==5 01Ω5V, T, VA=E2E=5 o-C15V Maxi 14 Equiv 12 0 0.1 1 10 1 10 100 1k Load Resistance (KΩ) Frequency (Hz) Figure 6. Maximum Output Voltage Swing Figure 7. Equivalent Input Noise Voltage Density vs. Load Resistance vs. Frequency Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 7

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Typical Performance Characteristics (Continued) 2.0 200 1.5 V) 150 Offset Voltage (m 01..50 VVCEEC==-1155VV Bias Current (nA) 100 VVCEEC==-1155VV ut 0.0 ut p p In In 50 -0.5 -1.0 0 -25 0 25 50 75 100 125 -40 -20 0 20 40 60 80 100 120 Ambient Temperature (oC) Ambient Temperature (oC) Figure 8. Input Offset Voltage vs.Temperature Figure 9. Input Bias Current vs.Temperature Typical Applications VO 10μF 6.2K 20K 8 7 6 5 - + AZ4580 + - 1 2 3 4 D2 15K 20K 20K 20K D1 10K VIN Figure 10. Application of AZ4580 in an AC/DC Converter Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 8

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Typical Applications (Continued) 33μF + 470 10μF 100pF 1/2AZ4580 Phono Cartridge - 47K 100K 16K 200K 390 4.7nF 15nF 100μF Figure 11. Application of AZ4580 in a RIAA Preamp BOOST -BASS-CUT R1 11K R2 100K R3 11K V i C1 C2 0.05μF 0.05μF R4 11K - C3 1/2 AZ4580 V 0.005μF O + R5 3.6K R6 500K R7 3.6K BOOST -TREBLE-CUT Figure 12. Application of AZ4580 in Tone Control Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 9

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 6° 5° 3.200(0.126) 3.710(0.146) 3.600(0.142) 4.310(0.170) 4° 4 ° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.254(0.010)TYP 0.360(0.014) 8.200(0.323) 0.360(0.014) 2.540(0.100 ) TYP 9.400(0.370) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) R0.750(0.030) 6.600(0.260) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.600(0.378) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 10

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 4.700(0.185) 0.320(0.013) 5.100(0.201) 1.350(0.053) 7° 1.750(0.069) 8° 8° 7° 0.675(0.027) D 0.725(0.029) 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.100(0.004) φ0.800(0.031) 0.300(0.012) 6) 0 0.200(0.008) 0 0. 0( 5 1 0. R 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.190(0.007) 1° 0.330(0.013) 0.250(0.010) 5° 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 11

Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) 2.900(0.114) SEE DETAIL A 3.100(0.122) 0.050(0.002) 0.090(0.004) 1.200(0.047) 0.150(0.006) MAX 0.200(0.008) 0.800(0.031) 1.050(0.041) 12 ° TOP & BOTTOM R0.090(0.004) R0.090(0.004) 9) 7) 2) 6 7 5 00(0.1 00(0.1 00(0.2 TYP GAGE PLANE 4.3 4.5 6.4 0° 8° 6) 1 0 0. 0( 0.450(0.018) 40 SEATING 0.750(0.030) 0. PLANE 0.190(0.007) 0.250(0.010) 1.000(0.039) 6) 0.300(0.012) TYP REF 2 0.0 YP 1.950(0.077) 50( T TYP 6 DETAIL A 0. Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 12

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