Ordering number : ENA1458A ATP405 N-Channel Power MOSFET 100V, 40A, 33mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)=25mΩ (typ.) • Input capacitance Ciss=4000pF (typ.) • 10V drive • Halogen free compliance Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 40 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 160 A Allowable Power Dissipation PD Tc=25°C 70 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 148 mJ Avalanche Current *2 IAV 40 A Note : *1 VDD=30V, L=100μH, IAV=40A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) • Package : ATPAK 7057-001 • JEITA, JEDEC : - • Minimum Packing Quantity : 3,000 pcs./reel ATP405-TL-H 6.5 1.5 4.6 Packing Type: TL Marking 2.6 4 0.5 0.4 0.4 ATP405 LOT No. 5 TL 0 6 6. 7.3 9.5 4. Electrical Connection 2,4 2 5 1 3 1.7 0.55 0. 0.8 0.6 0.7 0.4 1 : Gate 2.3 2.3 2 : Drain 1 3 : Source 4 : Drain 0.1 ATPAK 3 Semiconductor Components Industries, LLC, 2013 July, 2013 62712 TKIM/42209QA MSIM TC-00001943 No. A1458-1/7

ATP405 Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 100 V Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 10 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.5 V Forward Transfer Admittance | yfs | VDS=10V, ID=20A 62 S Static Drain-to-Source On-State Resistance RDS(on) ID=20A, VGS=10V 25 33 mΩ Input Capacitance Ciss 4000 pF Output Capacitance Coss VDS=20V, f=1MHz 300 pF Reverse Transfer Capacitance Crss 170 pF Turn-ON Delay Time td(on) 38 ns Rise Time tr 125 ns See specifi ed Test Circuit. Turn-OFF Delay Time td(off) 220 ns Fall Time tf 150 ns Total Gate Charge Qg 68 nC Gate-to-Source Charge Qgs VDS=60V, VGS=10V, ID=40A 14 nC Gate-to-Drain “Miller” Charge Qgd 15 nC Diode Forward Voltage VSD IS=40A, VGS=0V 0.9 1.2 V Switching Time Test Circuit Avalanche Resistance Test Circuit VIN VDD=60V 10V 0V L ID=20A VIN RL=3Ω ≥50Ω D VOUT PW=10μs D.C.≤1% ATP405 10V G 50Ω VDD 0V ATP405 P.G 50Ω S Ordering Information Device Package Shipping memo ATP405-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1458-2/7

ATP405 ID -- VDS ID -- VGS(off) 80 80 A 7600 Tc=25°C 8.0V 6.0 V 4.5V A 7600 VDS=10V Tc= --25°C75°C25°C ent, I-- D 5400 10.0V ent, I-- D 5400 urr urr C C n 30 n 30 C Drai 20 VGS=4.0V Drai 20 Tc=75° C 10 10 25° 5°C 2 -- 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Drain-to-Source Voltage, VDS -- V IT14604 Cutoff Voltage, VGS(off) -- V IT14605 RDS(on) -- VGS RDS(on) -- Tc 70 70 ID=20A Single pulse Single pulse Ω Ω m 60 m 60 n) -- 50 n) -- 50 o o Static Drain-to-SourceOn-State Resistance, R(DS 14320000 Tc-2-=2575°5°C°CC Static Drain-to-SourceOn-State Resistance, R(DS 14320000 V G S= 1 0 V, I D= 2 0 A 0 0 2 3 4 5 6 7 8 9 10 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V IT14606 Case Temperature, Tc -- °C IT14607 | yfs | -- ID IS -- VSD 2 2 VDS=10V 100 VGS=0V S 7 Single pulse y nce, fs -- || 1003752 C 25°C -- AS 105732532 d Transfer Admitta 103752 Tc= --25°75°C Source Current, I 01..1057325732 Tc=75°C 25°C --25°C ar 0.01 w 7 For 1.07 532 5 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 0.2 0.4 0.6 0.8 1.0 1.2 Drain Current, ID -- A IT14608 Diode Forward Voltage, VSD -- V IT14609 SW Time -- ID Ciss, Coss, Crss -- VDS 1000 10000 VDD=60V f=1MHz 7 7 VGS=10V 5 5 Ciss s n SW Time -- 23 td(otfff) Crss -- pF100023 me, 100 ss, 7 Ti 7 tr Co 5 ng 5 td(on) s, Coss chi Cis 3 wit 3 2 Crss S 2 100 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 5 10 15 20 25 30 Drain Current, ID -- A IT14610 Drain-to-Source Voltage, VDS -- V IT14611 No. A1458-3/7

ATP405 VGS -- Qg A S O 10 5 VDS=60V 3 IDP=160A PW≤10μs -- VS 89 ID=40A A 1003572 ID=40A 10ms 1100μ1s0μs e, VG 67 -- D 1072 100ms ms ate-to-Source Voltag 2435 Drain Current, I 01..1072357235 Otlhimpisei traeardtei aob nyis iRnDS(on). DC operation G 5 1 3 Tc=25°C 2 Single pulse 0 0.01 0 10 20 30 40 50 60 70 80 0.01 2 3 5 70.1 2 3 5 71.0 2 3 5 710 2 3 5 7100 2 Total Gate Charge, Qg -- nC IT14612 Drain-to-Source Voltage, VDS -- V IT14613 PD -- Tc EAS -- Ta 80 120 W % 70 Power Dissipation, P-- D 56340000 Energy derating factor-- 108640000 ble 20 che a n w a o al 20 All 10 Av 0 0 00 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 Case Temperature, Tc -- °C IT14602 Ambient Temperature, Ta -- °C IT14603 No. A1458-4/7

ATP405 Taping Specifi cation ATP405-TL-H No. A1458-5/7

ATP405 Outline Drawing Land Pattern Example ATP405-TL-H Mass (g) Unit Unit: mm 0.266 mm * For reference 6.5 7 6. 1.5 2 6 1. 2.3 2.3 No. A1458-6/7

ATP405 Note on usage : Since the ATP405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1458-7/7

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