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AT25640B-MAHL-T产品简介:
ICGOO电子元器件商城为您提供AT25640B-MAHL-T由Atmel设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 AT25640B-MAHL-T价格参考。AtmelAT25640B-MAHL-T封装/规格:存储器, EEPROM 存储器 IC 64Kb (8K x 8) SPI 20MHz 8-UDFN(2x3)。您可以下载AT25640B-MAHL-T参考资料、Datasheet数据手册功能说明书,资料中有AT25640B-MAHL-T 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC) |
描述 | IC EEPROM 64KBIT 20MHZ 8UDFN |
产品分类 | |
品牌 | Atmel |
数据手册 | |
产品图片 | |
产品型号 | AT25640B-MAHL-T |
PCN封装 | |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
供应商器件封装 | 8-UDFN(2x3) |
其它名称 | AT25640B-MAHL-TCT |
包装 | 剪切带 (CT) |
存储器类型 | EEPROM |
存储容量 | 64K (8K x 8) |
封装/外壳 | 8-UDFN |
工作温度 | -40°C ~ 85°C |
接口 | SPI 串行 |
标准包装 | 1 |
格式-存储器 | EEPROMs - 串行 |
电压-电源 | 1.8 V ~ 5.5 V |
速度 | 5MHz,10MHz,20MHz |
AT25320B and AT25640B SPI Serial EEPROM 32Kb (4096 x 8) and 64Kb (8192 x 8) DATASHEET Features Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 (0,0) and 3 (1,1) ̶ Datasheet Describes Mode 0 Operation Low-voltage and standard-voltage Operation ̶ 1.8V (V = 1.8V to 5.5V) CC 20MHz Clock Rate (5V) 32-byte Page Mode Block Write Protection ̶ Protect 1/4, 1/2, or Entire Array Write Protect (WP) Pin and Write Disable Instructions for Both Hardware and Software Data Protection Self-timed Write Cycle (5ms Max) High Reliability ̶ Endurance: 1,000,000 Write Cycles ̶ Data Retention: 100 Years Green (Pb/Halide-free/RoHS Compliant) Packaging Options Die Sales: Wafer Form, Tape and Reel, and Bumped Wafers Description The Atmel® AT25320B/640B provides 32,768-/65,536-bits of Serial Electrically-Erasable Programmable Read-Only Memory (EEPROM) organized as 4,096/8,192 words of 8 bits each. The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operation are essential. The AT25320B/640B is available in space-saving 8-lead JEDEC SOIC, 8-lead TSSOP, 8-lead UDFN, 8-lead XDFN, and 8-ball VFBGA packages. The AT25320B/640B is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface consisting of Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). All programming cycles are completely self-timed, and no separate erase cycle is required before Write. Block Write Protection is enabled by programming the status register with one of four blocks of write protection. Separate Program Enable and Program Disable instructions are provided for additional data protection. Hardware data protection is provided via the WP pin to protect against inadvertent write attempts to the status register. The HOLD pin may be used to suspend any serial communication without resetting the serial sequence. Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
1. Pin Configurations and Pinouts Table 1-1. Pin Configurations 8-lead SOIC 8-lead TSSOP Pin Name Function CS 1 8 VCC CS 1 8 VCC CS Chip Select SO 2 7 HOLD SO 2 7 HOLD WP 3 6 SCK WP 3 6 SCK SCK Serial Data Clock GND 4 5 SI GND 4 5 SI SI Serial Data Input Top View Top View SO Serial Data Output 8-pad UDFN 8-pad XDFN GND Ground VCC 8 1 CS VCC 8 1 CS V Power Supply CC HOLD 7 2 SO HOLD 7 2 SO SCK 6 3 WP SCK 6 3 WP WP Write Protect SI 5 4 GND SI 5 4 GND HOLD Suspends Serial Input Bottom View Bottom View 8-ball VFBGA VCC 8 1 CS HOLD 7 2 SO SCK 6 3 WP SI 5 4 GND Bottom View Note: Drawings are not to scale. 2. Absolute Maximum Ratings* Operating Temperature . . . . . . . . . . . . . . .-55C to +125C *Notice: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent Storage Temperature. . . . . . . . . . . . . . . . .-65C to +150C damage to the device. This is a stress rating only and functional operation of the device at Voltage on Any Pin these or any other conditions beyond those with Respect to Ground . . . . . . . . . . . . . . . . .-1.0V to +7.0V indicated in the operational sections of this specification is not implied. Exposure to Maximum Operating Voltage . . . . . . . . . . . . . . . . . . . 6.25V absolute maximum rating conditions for DC Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . .5.0mA extended periods may affect device reliability. 2 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
3. Block Diagram Figure 3-1. Block Diagram VCC GND Status Memory Array Address Register 4,096/8,192 x 8 Decoder Data Register Output SI Buffer Mode CS Decode Logic WP Clock SCK SO Generator HOLD AT25320B/640B [DATASHEET] 3 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
4. Electrical Characteristics 4.1 Pin Capacitance Table 4-1. Pin Capacitance(1) Applicable over recommended operating range from T = 25C, f = 1.0MHz, V = 5.0V (unless otherwise noted). A CC Symbol Test Conditions Max Units Conditions C Output Capacitance (SO) 8 pF V = 0V OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) 6 pF V = 0V IN IN Note: 1. This parameter is characterized and is not 100% tested. 4.2 DC Characteristics Table 4-2. DC Characteristics Applicable over recommended operating range from: T = -40C to +85C, V = 1.8V to 5.5V (unless otherwise noted). AI CC Symbol Parameter Test Condition Min Typ Max Units V Supply Voltage 1.8 5.5 V CC1 V Supply Voltage 2.5 5.5 V CC2 V Supply Voltage 4.5 5.5 V CC3 I Supply Current V = 5.0V at 20MHz, SO = Open, Read 7.5 10.0 mA CC1 CC I Supply Current V = 5.0V at 20MHz, SO = Open, Read, Write 4.0 10.0 mA CC2 CC I Supply Current V = 5.0V at 5MHz, SO = Open, Read, Write 4.0 6.0 mA CC3 CC I Standby Current V = 1.8V, CS = V < 0.1 6.0(2) μA SB1 CC CC I Standby Current V = 2.5V, CS = V 0.3 7.0(2) μA SB2 CC CC I Standby Current V = 5.0V, CS = V 2.0 10.0(2) μA SB3 CC CC I Input Leakage V = 0V to V -3.0 3.0 μA IL IN CC I Output Leakage V = 0V to V , T = 0°C to 70°C -3.0 3.0 μA OL IN CC AC V (1) Input Low-voltage -0.6 V x 0.3 V IL CC V (1) Input High-voltage V x 0.7 V + 0.5 V IH CC CC V Output Low-voltage I = 3.0mA 0.4 V OL1 OL 3.6V V 5.5V CC V Output High-voltage I = -1.6mA V - 0.8 V OH1 OH CC V Output Low-voltage I = 0.15mA 0.2 V OL2 OL 1.8V V 3.6V CC V Output High-voltage I = 100μA V - 0.2 V OH2 OH CC Notes: 1. V min and V max are reference only and are not tested. IL IH 2. Worst case measured at 85°C. 4 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
4.3 AC Characteristics Table 4-3. AC Characteristics Applicable over recommended operating range from T = -40°C to +85°C, V = As Specified, CL = 1 TTL Gate and 30pF AI CC (unless otherwise noted). Symbol Parameter Voltage Min Max Units 4.5 – 5.5 0 20 f SCK Clock Frequency 2.5 – 5.5 0 10 MHz SCK 1.8 – 5.5 0 5 4.5 – 5.5 2 t Input Rise Time 2.5 – 5.5 2 μs RI 1.8 – 5.5 2 4.5 – 5.5 2 t Input Fall Time 2.5 – 5.5 2 μs FI 1.8 – 5.5 2 4.5 – 5.5 20 t SCK High Time 2.5 – 5.5 40 ns WH 1.8 – 5.5 80 4.5 – 5.5 20 t SCK Low Time 2.5 – 5.5 40 ns WL 1.8 – 5.5 80 4.5 – 5.5 25 t CS High Time 2.5 – 5.5 50 ns CS 1.8 – 5.5 100 4.5 – 5.5 25 t CS Setup Time 2.5 – 5.5 50 ns CSS 1.8 – 5.5 100 4.5 – 5.5 25 t CS Hold Time 2.5 – 5.5 50 ns CSH 1.8 – 5.5 100 4.5 – 5.5 5 t Data In Setup Time 2.5 – 5.5 10 ns SU 1.8 – 5.5 20 4.5 – 5.5 5 t Data In Hold Time 2.5 – 5.5 10 ns H 1.8 – 5.5 20 4.5 – 5.5 5 t HOLD Setup Time 2.5 – 5.5 10 HD 1.8 – 5.5 20 4.5 – 5.5 5 t HOLD Hold Time 2.5 – 5.5 10 ns CD 1.8 – 5.5 20 4.5 – 5.5 0 20 t Output Valid 2.5 – 5.5 0 40 ns V 1.8 – 5.5 0 80 4.5 – 5.5 0 t Output Hold Time 2.5 – 5.5 0 ns HO 1.8 – 5.5 0 AT25320B/640B [DATASHEET] 5 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
Table 4-3. AC Characteristics (Continued) Applicable over recommended operating range from T = -40°C to +85°C, V = As Specified, CL = 1 TTL Gate and 30pF AI CC (unless otherwise noted). Symbol Parameter Voltage Min Max Units 4.5 – 5.5 0 25 t HOLD to Output Low Z 2.5 – 5.5 0 50 ns LZ 1.8 – 5.5 0 100 4.5 – 5.5 40 t HOLD to Output High Z 2.5 – 5.5 80 ns HZ 1.8 – 5.5 200 4.5 – 5.5 40 t Output Disable Time 2.5 – 5.5 80 ns DIS 1.8 – 5.5 200 4.5 – 5.5 5 t Write Cycle Time 2.5 – 5.5 5 ms WC 1.8 – 5.5 5 4.5 – 5.5 Endurance(1) 3.3V, 25°C, Page Mode 2.5 – 5.5 1,000,000 Write Cycles 1.8 – 5.5 Note: 1. This parameter is characterized and is not 100% tested. 5. Serial Interface Description Master: The device that generates the serial clock. Slave: Because the Serial Clock pin (SCK) is always an input, the AT25320B/640B always operates as a slave. Transmitter/receiver: The AT25320B/640B has separate pins designated for data transmission (SO) and reception (SI). MSB: The Most Significant Bit (MSB) is the first bit transmitted and received. Serial Opcode: After the device is selected with CS going low, the first byte will be received. This byte contains the opcode that defines the operations to be performed. Invalid Opcode: If an invalid opcode is received, no data will be shifted into the AT25320B/640B, and the Serial Output pin (SO) will remain in a high-impedance state until the falling edge of CS is detected again. This will reinitialize the serial communication. Chip Select: The AT25320B/640B is selected when the CS pin is low. When the device is not selected, data will not be accepted via the SI pin, and the Serial Output pin (SO) will remain in a high-impedance state. Hold: The HOLD pin is used in conjunction with the CS pin to pause the AT25320B/640B. When the device is selected and a serial sequence is underway, HOLD can be used to pause the serial communication with the master device without resetting the serial sequence. To pause, the HOLD pin must be brought low while the SCK pin is low. To resume serial communication, the HOLD pin is brought high while the SCK pin is low (SCK may still toggle during HOLD). Inputs to the SI pin will be ignored while the SO pin is in the high-impedance state. Write Protect: The Write Protect pin (WP) will allow normal read/write operations when held high. When the WP pin is brought low and WPEN bit is one, all write operations to the status register are inhibited. WP going low while CS is still low will interrupt a Write to the status register. If the internal write cycle has already been initiated, WP going low will have no effect on any write operation to the status register. The WP pin function is blocked when the WPEN bit in the status register is zero. This will allow the user to install the AT25320B/640B in a system with the WP pin tied to ground and still be able to write to the status register. All WP pin functions are enabled when the WPEN bit is set to one. 6 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
Figure 5-1. SPI Serial Interface Master: Slave: Microcontroller AT25320B/640B Data Out (MOSI) SI Data In (MISO) SO Serial Clock (SPI CK) SCK SS0 CS SS1 SI SS2 SO SS3 SCK CS SI SO SCK CS SI SO SCK CS AT25320B/640B [DATASHEET] 7 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
6. Functional Description The AT25320B/640B is designed to interface directly with the synchronous Serial Peripheral Interface (SPI) of the 6805 and 68HC11 series of microcontrollers. The AT25320B/640B utilizes an 8-bit instruction register. The list of instructions and their operation codes are contained in Table 6-1. All instructions, addresses, and data are transferred with the MSB first and start with a high-to-low CS transition. Table 6-1. Instruction Set Instruction Name Instruction Format Operation WREN 0000 X110 Set Write Enable Latch WRDI 0000 X100 Reset Write Enable Latch RDSR 0000 X101 Read Status Register WRSR 0000 X001 Write Status Register READ 0000 X011 Read Data from Memory Array WRITE 0000 X010 Write Data to Memory Array Write Enable (WREN): The device will power-up in the write disable state when V is applied. All CC programming instructions must therefore be preceded by a Write Enable instruction. Write Disable (WRDI): To protect the device against inadvertent writes, the Write Disable instruction disables all programming modes. The WRDI instruction is independent of the status of the WP pin. Read Status Register (RDSR): The Read Status Register instruction provides access to the status register. The Ready/Busy and Write Enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write Protection Bits indicate the extent of protection employed. These bits are set by using the WRSR instruction. Table 6-2. Status Register Format Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 WPEN X X X BP1 BP0 WEN RDY Table 6-3. Read Status Register Bit Definition Bit Definition Bit 0 (RDY) Bit 0 = 0 (RDY) indicates the device is READY. Bit 0 = 1 indicates the write cycle is in progress. Bit 1 (WEN) Bit 1= 0 indicates the device is not WRITE ENABLED. Bit 1 = 1 indicates the device is write enabled. Bit 2 (BP0) See Table 6-4 on page 9. Bit 3 (BP1) See Table 6-4 on page 9. Bits 4 – 6 are zeros when device is not in an internal write cycle. Bit 7 (WPEN) See Table 6-5 on page 9. Bits 0 – 7 are ones during an internal write cycle. 8 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
Write Status Register (WRSR): The WRSR instruction allows the user to select one of four levels of protection. The AT25320B/640B is divided into four array segments. One-quarter, one-half, or all of the memory segments can be protected. Any of the data within any selected segment will therefore be read-only. The Block Write Protection levels and corresponding status register control bits are shown in Table 6-4. The three bits BP0, BP1, and WPEN are nonvolatile cells that have the same properties and functions as the regular memory cells (e.g., WREN, t , RDSR). WC Table 6-4. Block Write Protect Bits Status Register Bits Array Addresses Protected Level BP1 BP0 AT25320B AT25640B 0 0 0 None None 1(1/4) 0 1 0C000FFF 18001FFF 2(1/2) 1 0 08000FFF 10001FFF 3(All) 1 1 00000FFF 00001FFF The WRSR instruction also allows the user to enable or disable the Write Protect (WP) pin through the use of the Write Protect Enable (WPEN) bit. Hardware Write Protection is enabled when the WP pin is low and the WPEN bit is one. Hardware Write Protection is disabled when either the WP pin is high or the WPEN bit is zero. When the device is hardware write protected, writes to the status register, including the Block Protect bits and the WPEN bit, and the block-protected sections in the memory array are disabled. Writes are only allowed to sections of the memory that are not block-protected. Note: When the WPEN bit is Hardware Write Protected, it cannot be changed back to zero as long as the WP pin is held low. Table 6-5. WPEN Operation Protected Unprotected Status WPEN WP WEN Blocks Blocks Register 0 X 0 Protected Protected Protected 0 X 1 Protected Writeable Writeable 1 Low 0 Protected Protected Protected 1 Low 1 Protected Writeable Protected X High 0 Protected Protected Protected X High 1 Protected Writeable Writeable AT25320B/640B [DATASHEET] 9 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
Read Sequence (READ): Reading the AT25320B/640B via the Serial Output (SO) pin requires the following sequence. After the CS line is pulled low to select a device, the Read opcode is transmitted via the SI line followed by the byte address to be read (A15 – A0, see Table 6-6). Upon completion, any data on the SI line will be ignored. The data (D7 – D0) at the specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be driven high after the data comes out. The read sequence can be continued since the byte address is automatically incremented and data will continue to be shifted out. When the highest address is reached, the address counter will roll over to the lowest address allowing the entire memory to be read in one continuous read cycle. Write Sequence (WRITE): In order to program the AT25320B/640B, two separate instructions must be executed. First, the device must be write enabled via the WREN instruction. Then a Write instruction may be executed. Also, the address of the memory location(s) to be programmed must be outside the protected address field location selected by the Block Write Protection level. During an internal write cycle, all commands will be ignored except the RDSR instruction. A Write instruction requires the following sequence. After the CS line is pulled low to select the device, the Write opcode is transmitted via the SI line followed by the byte address (A15 – A0) and the data (D7 – D0) to be programmed (see Table 6-6). Programming will start after the CS pin is brought high. The low-to-high transition of the CS pin must occur during the SCK low-time immediately after clocking in the D0 (LSB) data bit. The Ready/Busy status of the device can be determined by initiating a Read Status Register (RDSR) instruction. If Bit 0 = 1, the write cycle is still in progress. If Bit 0 = 0, the write cycle has ended. Only the RDSR instruction is enabled during the write programming cycle. The AT25320B/640B is capable of a 32-byte page write operation. After each byte of data is received, the five low-order address bits are internally incremented by one; the high-order bits of the address will remain constant. If more than 32-bytes of data are transmitted, the address counter will rollover and the previously written data will be overwritten. The AT25320B/640B is automatically returned to the write disable state at the completion of a write cycle. Note: If the device is not Write-enabled (WREN), the device will ignore the write instruction and will return to the standby state, when CS is brought high. A new CS falling edge is required to reinitiate the serial communication. Table 6-6. Address Key Address AT25320B AT25640B A A –A A –A N 11 0 12 0 Don’t Care Bits A –A A –A 15 12 15 13 10 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
7. Timing Diagrams Figure 7-1. Synchronous Data Timing (for Mode 0) tCS VIH CS VIL tCSS tCSH VIH SCK tWH tWL VIL tSU tH VIH SI Valid In VIL tV tHO tDIS VOH HI-Z HI-Z SO VOL Figure 7-2. WREN Timing CS SCK SI WREN Opcode HI-Z SO Figure 7-3. WRDI Timing CS SCK SI WRDI Opcode HI-Z SO AT25320B/640B [DATASHEET] 11 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
Figure 7-4. RDSR Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK SI Instruction Data Out High-impedance SO 7 6 5 4 3 2 1 0 MSB Figure 7-5. WRSR Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK Data In SI Instruction 7 6 5 4 3 2 1 0 High-impedance SO Figure 7-6. Read Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31 SCK Byte Address SI Instruction 15 14 13 ... 3 2 1 0 Data Out High-impedance SO 7 6 5 4 3 2 1 0 MSB 12 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
Figure 7-7. Write Timing CS 0 1 2 3 4 5 6 7 8 9 10 11 20 21 22 23 24 25 26 27 28 29 30 31 SCK Byte Address Data In SI Instruction 15 14 13 ... 3 2 1 0 7 6 5 4 3 2 1 0 SO High-impedance Figure 7-8. HOLD Timing CS tCD tCD SCK tHD HOLD tHD tHZ SO tLZ AT25320B/640B [DATASHEET] 13 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
8. Ordering Code Detail A T 2 5 3 2 0 B - S S H L - B Atmel Designator Shipping Carrier Option B = Bulk (Tubes) T = Tape and Reel, Standard Quantity Option E = Tape and Reel, Expanded Quantity Option Product Family 25 = Standard SPI Operating Voltage Serial EPPROM L = 1.8V to 5.5V Device Density Packaged Device Grade or Wafer/Die Thickness 320 = 32-kilobit 640 = 64-kilobit H = Green, NiPdAu Lead Finish Industrial Temperature Range (-40°C to +85°C) Device Revision U = Green, Matte Sn Lead Finish Industrial Temperature Range (-40°C to +85°C) 11 = 11mil Wafer Thickness Package Option SS = JEDEC SOIC X = TSSOP MA = UDFN ME = XDFN C = VFBGA WWU = Wafer Unsawn WDT = Die in Tape and Reel 14 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
9. Part Markings AT25320B and AT25640B: Package Marking Information 8-lead SOIC 8-lead TSSOP 8-lead UDFN 2.0 x 3.0 mm Body ### ATHYWW ATMLHYWW ###L @ HL@ ###L @ AAAAAAAA AAAAAAA YXX 8-ball VFBGA 8-lead XDFN 2.35 x 3.73 mm Body 1.8 x 2.2 mm Body ###U ### @YMXX YXX Note 1: designates pin 1 Note 2: Package drawings are not to scale Catalog Number Truncation AT25320B Truncation Code ###: 5BB AT25640B Truncation Code ###: 5CB Date Codes V oltages Y = Year M = Month WW = Work Week of Assembly L: 1.8V min 2: 2012 6: 2016 A: January 02: Week 2 3: 2013 7: 2017 B: February 04: Week 4 4: 2014 8: 2018 ... ... 5: 2015 9: 2019 L: December 52: Week 52 Country of Assembly L ot Number G rade/Lead Finish Material @ = Country of Assembly AAA...A = Atmel Wafer Lot Number U: Industrial/Matte Tin H: Industrial/NiPdAu Trace Code A tmel Truncation XX = Trace Code (Atmel Lot Numbers Correspond to Code) AT: Atmel Example: AA, AB.... YZ, ZZ ATM: Atmel ATML: Atmel 11/5/12 TITLE DRAWING NO. REV. 25320-640BSM, AT25320B and AT25640B Package Package Mark Contact: 25320-640BSM B Marking Information DL-CSO-Assy_eng@atmel.com AT25320B/640B [DATASHEET] 15 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
10. Ordering Information Delivery Information Operation Atmel Ordering Code Lead Finish Package Form Quantity Range AT25320B-SSHL-B Bulk (Tubes) 100 per Tube 8S1 AT25320B-SSHL-T Tape and Reel 4,000 per Reel AT25320B-XHL-B Bulk (Tubes) 100 per Tube 8X NiPdAu AT25320B-XHL-T Tape and Reel 5,000 per Reel (Lead-free/Halogen-free) Industrial AT25320B-MAHL-T Tape and Reel 5,000 per Reel Temperature 8MA2 (-40C to 85C) AT25320B-MAHL-E Tape and Reel 15,000 per Reel AT25320B-MEHL-T 8ME1 Tape and Reel 5,000 per Reel SnAgCu AT25320B-CUL-T 8U2-1 Tape and Reel 5,000 per Reel (Lead-free/Halogen-free) AT25320B-WWU11L(1) N/A Wafer Sale Note 1 AT25640B-SSHL-B Bulk (Tubes) 100 per Tube 8S1 AT25640B-SSHL-T Tape and Reel 4,000 per Reel AT25640B-XHL-B Bulk (Tubes) 100 per Tube 8X NiPdAu AT25640B-XHL-T Tape and Reel 5,000 per Reel (Lead-free/Halogen-free) Industrial AT25640B-MAHL-T Tape and Reel 5,000 per Reel Temperature 8MA2 (-40C to 85C) AT25640B-MAHL-E Tape and Reel 15,000 per Reel AT25640B-MEHL-T 8ME1 Tape and Reel 5,000 per Reel SnAgCu AT25640B-CUL-T 8U2-1 Tape and Reel 5,000 per Reel (Lead-free/Halogen-free) AT25640B-WWU11L(1) N/A Wafer Sale Note 1 Note: 1. Contact Atmel Sales for Wafer sales Package Type 8S1 8-lead, 0.15” wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8X 8-lead, 4.40mm body, Plastic Thin Shrink Small Outline Package (TSSOP) 8MA2 8-pad, 2.00mm x 3.00mm body, 0.50mm pitch, Ultra Thin, Dual No Lead (UDFN) 8ME1 8-pad, 1.80mm x 2.20mm body, Ultra Lead Frame Land Grid Array (XDFN) 8U2-1 8-ball, 2.35mm x 3.73mm body, 0.75mm pitch (VFBGA) 16 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
11. Packaging Information 11.1 8S1 — 8-lead JEDEC SOIC C 1 E E1 L N Ø TOP VIEW END VIEW e b A COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE A1 A 1.35 – 1.75 A1 0.10 – 0.25 b 0.31 – 0.51 C 0.17 – 0.25 D 4.80 – 5.05 D E1 3.81 – 3.99 E 5.79 – 6.20 SIDE VIEW e 1.27 BSC Notes: This drawing is for general information only. L 0.40 – 1.27 Refer to JEDEC Drawing MS-012, Variation AA ØØ 0° – 8° for proper dimensions, tolerances, datums, etc. 6/22/11 TITLE GPC DRAWING NO. REV. 8S1, 8-lead (0.150” Wide Body), Plastic Gull Wing SWB 8S1 G Package Drawing Contact: Small Outline (JEDEC SOIC) packagedrawings@atmel.com AT25320B/640B [DATASHEET] 17 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
11.2 8X — 8-lead TSSOP C 1 Pin 1 indicator this corner E1 E L1 N L Top View End View A b A1 COMMON DIMENSIONS e A2 (Unit of Measure = mm) D SYMBOL MIN NOM MAX NOTE Side View A - - 1.20 A1 0.05 - 0.15 Notes: 1. This drawing is for general information only. A2 0.80 1.00 1.05 Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. D 2.90 3.00 3.10 2, 5 2. Dimension D does not include mold Flash, protrusions or gate E 6.40 BSC burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15mm (0.006in) per side. E1 4.30 4.40 4.50 3, 5 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25mm b 0.19 0.25 0.30 4 (0.010in) per side. e 0.65 BSC 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08mm total in excess L 0.45 0.60 0.75 of the b dimension at maximum material condition. Dambar L1 1.00 REF cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07mm. C 0.09 - 0.20 5. Dimension D and E1 to be determined at Datum Plane H. 2/27/14 TITLE GPC DRAWING NO. REV. 8X, 8-lead 4.4mm Body, Plastic Thin Package Drawing Contact: Shrink Small Outline Package (TSSOP) TNR 8X E packagedrawings@atmel.com 18 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
11.3 8MA2 — 8-pad UDFN E 1 8 Pin 1 ID 2 7 D 3 6 4 5 TOP VIEW C SIDE VIEW A2 A A1 E2 b (8x) 8 1 COMMON DIMENSIONS 7 2 Pin#1 ID (Unit of Measure = mm) D2 6 3 SYMBOL MIN NOM MAX NOTE A 0.50 0.55 0.60 5 4 A1 0.0 0.02 0.05 e (6x) A2 - - 0.55 L (8x) K D 1.90 2.00 2.10 BOTTOM VIEW D2 1.40 1.50 1.60 Notes: 1. This drawing is for general information only. Refer to E 2.90 3.00 3.10 Drawing MO-229, for proper dimensions, tolerances, E2 1.20 1.30 1.40 datums, etc. 2. The Pin #1 ID is a laser-marked feature on Top View. b 0.18 0.25 0.30 3 3. Dimensions b applies to metallized terminal and is C 1.52 REF measured between 0.15 mm and 0.30 mm from the terminal tip. If the terminal has the optional radius on L 0.30 0.35 0.40 the other end of the terminal, the dimension should e 0.50 BSC not be measured in that radius area. 4. The Pin #1 ID on the Bottom View is an orientation K 0.20 - - feature on the thermal pad. 11/26/14 TITLE GPC DRAWING NO. REV. 8MA2, 8-pad 2 x 3 x 0.6mm Body, Thermally Package Drawing Contact: Enhanced Plastic Ultra Thin Dual Flat No-Lead YNZ 8MA2 G packagedrawings@atmel.com Package (UDFN) AT25320B/640B [DATASHEET] 19 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
11.4 8ME1 — 8-pad XDFN D 8 7 6 5 PIN #1 ID E 1 2 3 4 A1 Top View A Side View e1 b L COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE 0.10 A – – 0.40 PIN #1 ID A1 0.00 – 0.05 D 1.70 1.80 1.90 0.15 E 2.10 2.20 2.30 b 0.15 0.20 0.25 b e 0.40 TYP e e1 1.20 REF L 0.26 0.30 0.35 End View 9/10/2012 TITLE GPC DRAWING NO. REV. 8ME1, 8-pad (1.80mm x 2.20mm body) DTP 8ME1 B Package Drawing Contact: Extra Thin DFN (XDFN) packagedrawings@atmel.com 20 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
11.5 8U2-1 — 8-ball VFBGA f 0.10 C d0.10 (4X) d0.08 C A1 BALL D A C A1 BALL PAD CORNER PAD CORNER 2 1 Øb A j n0.15m C A B j n0.08m C B E e C D (e1) A1 B d A2 (d1) A TOP VIEW SIDE VIEW BOTTOM VIEW 8 SOLDER BALLS COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX NOTE A 0.81 0.91 1.00 A1 0.15 0.20 0.25 A2 0.40 0.45 0.50 b 0.25 0.30 0.35 D 2.35 BSC Notes: E 3.73 BSC 1. This drawing is for general e 0.75 BSC 2. Dimension 'b' is measured at the maximum solder ball diameter. e1 0.74 REF 3. Solder ball composition shall be 95.5Sn-4.0Ag-.5Cu. d 0.75 BSC d1 0.80 REF 6/11/13 TITLE GPC DRAWING NO. REV. 8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch, Package Drawing Contact: Very Thin, Fine-Pitch Ball Grid Array Package GWW 8U2-1 G packagedrawings@atmel.com (VFBGA) AT25320B/640B [DATASHEET] 21 Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
12. Revision History Doc. Rev. Date Comments Add the UDFN Expanded Quantity Option. 8535H 01/2015 Update the 8X, 8MA2, and 8ME1 package outline drawings and the ordering information. Update part markings to single page part marking. Update package drawings. 8535G 11/2012 Replace 8A2 package with 8X package. Update template and Atmel logos. Update 8A2 and 8S1 package drawings. 8535F 06/2010 Remove Preliminary. 8535E 04/2010 Update Ordering Code Detail, Ordering Information, template. Change Catalog Numbering. 8535D 08/2009 Add new Part Marking Information. 8535C 05/2009 Add Part Marking information; changed to Preliminary status. 8535B 07/2008 Modify ‘Endurance’ parameter on page 6. 8535A 04/2008 Initial document release. 22 AT25320B/640B [DATASHEET] Atmel-8535H-SEEPROM-AT25320B-640B-Datasheet_012015
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