ARF460A/B Datasheet RF Power MOSFET Final May 2018

RF Power MOSFET Contents 1 Revision History ............................................................................................................................. 1 1.1 Revision F ............................................................................................................................................ 1 1.2 Revision E ............................................................................................................................................ 1 1.3 Revision D ........................................................................................................................................... 1 1.4 Revision C ........................................................................................................................................... 1 1.5 Revision B ........................................................................................................................................... 1 1.6 Revision A ........................................................................................................................................... 1 2 Product Overview .......................................................................................................................... 2 2.1 Features .............................................................................................................................................. 2 2.2 Characteristics .................................................................................................................................... 2 3 Electrical Specifications .................................................................................................................. 3 3.1 Absolute Maximum Ratings ................................................................................................................ 3 3.2 Thermal and Mechanical Characteristics ............................................................................................ 3 3.3 Electrical Performance ....................................................................................................................... 4 3.4 Typical Performance Curves ............................................................................................................... 5 3.5 Typical Test Circuit .............................................................................................................................. 8 4 Package Specification ..................................................................................................................... 9 4.1 Package Outline Drawing ................................................................................................................... 9 ARF460A/B Datasheet Revision F

RF Power MOSFET 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision F Revision F was published in May 2018. The following is a summary of the changes in revision F of this document. Updated Product Overview (see page 2) image and features bullet Added Thermal and Mechanical Characteristics (see page 3) section Updated Maximum Transient Thermal Impedance (see page 5) graph Updated Capacitance vs. Drain-to-Source Voltage (see page 6) graph Updated Threshold Voltage vs. Temperature (see page 6) graph 1.2 Revision E Revision E was published in October 2007. The following is a summary of the changes in revision E of this document. Updated to Microsemi format Changed operating and storage junction temperature range from –55 °C to 175 °C to –55 °C to 150 ° C Changed the GFS (VDS) from 15 V to 25 V Changed the minimal values in the Functional Characteristics (see page 4) table 1.3 Revision D Revision D was published in August 2003. The following is a summary of the changes in revision D of this document. Updated Maximum Transient Thermal Impedance (see page 5) graph Added RC ladder Updated patent information 1.4 Revision C Revision C was published in March 2002. The following is a summary of the changes in revision C of this document. Updated to remove preliminary status 1.5 Revision B Revision B was published in November 2001. The following is a summary of the changes in revision B of this document. Updated capacitance values in the Dynamic Electrical Characteristics (see page 4) table 1.6 Revision A Revision A was published in December 2000. It is the first publication of this document. ARF460A/B Datasheet Revision F 1

RF Power MOSFET 2 Product Overview The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical, and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high-efficiency classes of operation. 2.1 Features The following are key features of the ARF460A/B devices: Low-cost common source RF package Low Vth thermal coefficient Low thermal resistance Optimized SOA for superior ruggedness RoHS compliant 2.2 Characteristics The following are characteristics of the ARF460A/B devices at 125 V and 40.68 MHz: Output power: 150 W Gain: 13 dB (Class AB) Efficiency: 75% (Class C) ARF460A/B Datasheet Revision F 2

RF Power MOSFET 3 Electrical Specifications This section details the electrical specifications for the ARF460A/B devices. 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the ARF460A/B devices. All ratings at T = 25 °C unless otherwise specified. C Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain-source voltage 500 V VDGO Drain-gate voltage 500 V ID Continuous drain current 14 A VGS Gate-source voltage ±30 V PD Total power dissipation 250 W RΘJC Junction-to-case thermal resistance 0.40 °C/W TJ, TSTG Operating and storage junction temperature range –55 to 150 °C TL Lead temperature 0.063 inches from case for 10 seconds 300 °C 3.2 Thermal and Mechanical Characteristics The following table shows the thermal and mechanical characteristics of the ARF460A/B device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RθJC Junction-to-case thermal resistance 0.27 0.50 °C/W TJ Operating junction temperature –55 175 °C Tstg Storage temperature –55 175 TL Soldering temperature for 10 seconds (1.6 mm from case) 260 Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m WT Package weight 0.22 oz 6.1 g ARF460A/B Datasheet Revision F 3

RF Power MOSFET 3.3 Electrical Performance The following table shows the static electrical characteristics of the ARF460A/B devices. These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Table 3 • Static Electrical Characteristics Symbol Parameter Min Typ Max Unit BVDSS Drain-source breakdown voltage (VGS = 0 V, ID = 250 µA) 500 V VDS(ON) On-state drain voltage(ID(ON) = 7 A, VGS = 10 V) 4 V IDSS Zero gate voltage drain current (VDS = VDSS, VGS = 0 V) 25 µA Zero gate voltage drain current (VDS = 0.8 VDSS, VGS = 0 V, TC = 125 °C) 250 IGSS Gate-source leakage current (VDS = ±30 V, VDS = 0 V) ±100 nA gFS Forward transconductance (VDS = 25 V, ID = 7 A) 3.3 5.5 8 mhos VGS(TH) Gate threshold voltage (VDS = VGS, ID = 50 mA) 3 5 V The following table shows the dynamic electrical characteristics of the ARF460A/B devices. Table 4 • Dynamic Electrical Characteristics Symbol Parameter Test Conditions Min Typ Max Unit CISS Input capacitance VGS = 0 V 1200 1400 pF COSS Output capacitance VDS = 150 V 150 180 f = 1 MHz CRSS Reverse transfer capacitance 60 75 tD(ON) Turn-on delay time VGS = 15 V 7 ns tR Rise time VDD = 0.5 VDSS 6 ID = ID[Cont.] at 25 °C tD(OFF) Turn-off delay time RG = 1.6 Ω 20 tF Fall time 4.0 7 The following table shows the functional characteristics of the ARF460A/B devices. Table 5 • Functional Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit GPS Common source amplifier power gain f = 40.68 MHz 13 15 dB η Drain efficiency IDQ = 50 mA 70 75 % VDD = 125 V Ψ Electrical ruggedness VSWR 10:1 POUT = 150 W No degradation in output power Note: Pulse test: pulse width < 380 µs; duty cycle < 2% ARF460A/B Datasheet Revision F 4

RF Power MOSFET 3.4 Typical Performance Curves This section shows the typical performance curves for the ARF460A/B devices. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Transient Thermal Impedance Model Figure 3 • Capacitance vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Gate-to-Source Voltage ARF460A/B Datasheet Revision F 5

RF Power MOSFET Figure 3 • Capacitance vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Gate-to-Source Voltage Figure 5 • Drain Current vs. Drain-to-Source Voltage Figure 6 • Threshold Voltage vs. Temperature Figure 7 • Typical Output Characteristics The following table shows the typical class AB large signal input and output impedance of the ARF460A/B Datasheet Revision F 6

RF Power MOSFET The following table shows the typical class AB large signal input and output impedance of the ARF460A/B devices, where I = 100 mA. DQ Table 6 • Typical Class AB Large Signal Input—Output Impedance Frequency (MHz) ZIN1 (Ω) ZOL2 (Ω) 2.0 20.9 - j 9.2 38 - j 2.6 13.5 2.4 - j 6.8 31 - j 14 27 0.57 - j 2.6 19.6 - j 17.6 40 0.31 - j 0.5 12.5 - j 15.8 65 0.44 - j 1.9 6.0 - j 10.5 Note: 1. Gate shunted with 25 Ω 2. I = 100 mA DQ 3. Conjugate of optimum load for 150 W output at V = 125 V DD ARF460A/B Datasheet Revision F 7

RF Power MOSFET 3.5 Typical Test Circuit The following drawing shows the test circuit of the ARF460A/B devices. Figure 8 • 40.68 MHz Test Circuit The following table shows the test circuit characteristics of the ARF460A/B devices. Table 7 • Test Circuit Characteristics Component Characteristic C1 2000 pF 100 V NPO chip mounted at gate lead C2–C5 Arco 463 Mica trimmer C6–C8 0.1 µF 500 V ceramic chip C9 2200 pF 500 V chip L1 4t #20 AWG 0.25" ID 0.3" L approximately 80 nH L2 6t #16 AWG 0.312" ID 0.4" L approximately 185 nH L3 15t #24 AWG 0.25" ID approximately 0.85 µH L4 VK200-4B ferrite choke 3 µH R1–R2 51 Ω 0.5 W carbon DUT ARF460A/B ARF460A/B Datasheet Revision F 8

RF Power MOSFET 4 Package Specification This section outlines the package specification for the ARF460A/B device. 4.1 Package Outline Drawing This section details the TO-247 package drawing of the ARF460A/B device. Dimensions are in millimeters and (inches). Figure 9 • Package Outline Drawing ARF460A/B Datasheet Revision F 9

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