ARF448A(G) D G ARF448B(G) S TO-247 Common Source RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Low Cost Common Source RF Package. Specified 150 Volt, 40.68 MHz Characteristics: ¥ Very High Breakdown for Improved Ruggedness. Output Power = 140 Watts. ¥ Low Thermal Resistance. Gain = 15dB (Class C) ¥ Nitride Passivated Die for Improved Reliability. Efficiency = 75% MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified. C Symbol Parameter ARF448A/448B(G) UNIT V Drain-Source Voltage 450 DSS Volts V Drain-Gate Voltage 450 DGO I Continuous Drain Current @ T = 25°C 15 Amps D C V Gate-Source Voltage ±30 Volts GS P Total Power Dissipation @ T = 25°C 230 Watts D C R Junction to Case 0.55 °C/W qJC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG °C T Lead Temperature: 0.063" from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 mA) 450 DSS GS D Volts V (ON) On State Drain Voltage 1 (I (ON) = 7.5A, V = 10V) 3 DS D GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I mA DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125°C) 250 DS DSS GS C I Gate-Source Leakage Current (V = ±30V, V = 0V) ±100 nA GSS GS DS gfs Forward Transconductance (VDS = 25V, ID = 7.5A) 5 8.5 mhos VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 5 Volts 003 2 7- CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. C APT Website - http://www.advancedpower.com v e R 8 0 9 4 0- 5 0

DYNAMIC CHARACTERISTICS ARF448A/448B(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 1400 1700 iss V = 0V GS C Output Capacitance V = 150V 150 200 pF oss DS C Reverse Transfer Capacitance f = 1 MHz 65 100 rss td(on) Turn-on Delay Time V = 15V 7 15 GS t Rise Time V = 0.5 V 5 10 r DD DSS ns td(off) Turn-off Delay Time ID = ID[Cont.] @ 25°C 23 40 R = 1.6W t Fall Time G 12 25 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 40.68 MHz 13 15 dB PS V = 0V V = 150V h Drain Efficiency GS DD 70 75 % y Electrical Ruggedness VSWR 20:1 Pout = 140W No Degradation in Output Power 1Pulse Test: Pulse width < 380 mS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C V = 150V Ciss 25 DD P = 250W out 1000 20 pf) B) CE ( 500 N (d 15 TAN Coss AI CI G A 10 AP Crss C 5 100 0 50 10 20 30 40 50 60 65 1 5 10 50 150 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 25 TJ = -55°C 70 10mS 100mS RES) 20 VDS> ID (ON) x RDS (ON)MAX. RES) LIOMPITEERDA BTIYO RND HSE (ROEN) E 250mSEC. PULSE TEST E MP @ <0.5 % DUTY CYCLE MP 10 1mS A A T ( 15 T ( 5 N N E E R R 10mS R R U 10 U N C N C 1 100mS AI AI R R .5 DC v B I, DD 5 TJ = +125°C TJ = -55°C I, DD TTJC ==++12550°°CC Re TJ = +25°C SINGLE PULSE 8 0 .1 90 0 2 4 6 8 1 5 10 50 100 500 0-4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 5 Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 0

ARF448A/448B(G) 1.2 40 VGS=8, 10 & 15V GE 1.1 ES) TA ER 30 L P , THRESHOLD VOS(th)(NORMALIZED) 100...098 DRAIN CURRENT (AM 2100 656..55VVV VG 0.7 , D 5V I 4.5V 0.6 0 -50 -25 0 25 50 75 100 125 150 1 5 10 15 20 25 30 TC, CASE TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Threshold Voltage vs Temperature Figure 6, Typical Output Characteristics 300 17 N Class C AI V = 150V G Class C S) 240 f =D 4D0.68 MHz ER VDD = 150V ATT LIFI 16 f = 40.68 MHz W P M UT ( 180 E A POWER O 120 N SOURC(dB) 15 P, OUT 60 OMMO 14 C , S P G 0 13 0 2 4 6 8 10 0 60 120 180 240 300 PIN, POWER IN (WATTS) POUT, POWER OUT (WATTS) Figure 7, Typical Power Out vs Power In Figure 8, Typical Common Source Amplifier Gain vs Power Out 0.6 D=0.5 W) °E (C/ 0.1 0.2 C 0.1 N A 0.05 D 0.05 E P MAL IM 0.01 00..0021 NoPDMte: t1 R E SINGLE PULSE H 0.005 t2 T , C Duty Factor D = t1/t2 ZqJ Peak TJ = PDM x ZqJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Table 1 - Typical Class C Large Signal Input-Output Impedance Freq. (MHz) Z (W) Z (W) in OL 2.0 20.90 - j 9.2 56.00 - j 06.0 3 13.5 2.40 - j 6.8 37.00 - j 26.0 00 2 27.0 0.57 - j 2.6 18.00 - j 25.0 7- 40.0 0.31 - j 0.5 9.90 - j 19.2 C 65.0 0.44 + j 1.9 4.35 - j 11.4 ev R 8 Z - gate shunted by 25W 0 in 49 Z - conjugate of optimum load impedance for 250W at 150V 0- OL 5 0

ARF448A/448B(G) 40.68 MHz Test Circuit Parts List C1 -- 1800pF 100V chip C2-C4 -- Arco 463 Mica Trimmer L4 C5-C7 -- 1nF 500V COG chip + L1 -- 1" #16 AWG into hairpin ~9.6nH 150V - L2 -- 6t #16 AWG .25" ID ~165nH C6 C7 L3 -- 10t #18 AWG .25" ID ~0.47µH L4 -- VK200-4B ferrite choke ~3µH L3 R1 -- 25 Ohm 1/2W Carbon T1 -- 9:1 Broadband Transformer RF Output L2 C5 C4 C3 L1 DUT RF Input T1 C1 C2 R1 40.48 MHz Test Circuit TO-247 Package Outline Top View 4.69 (.185) 5.31 (.209) 15.49 (.610) 1.49 (.059) 16.26 (.640) 2.49 (.098) 5.38 (.212) Dimensions in Millimeters and (Inches) 6.15 (.242) BSC 6.20 (.244) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical e 20.80 (.819) specifications. The device pin-outs are the mirror image urc 21.46 (.845) of each other to allow ease of use as a push-pull pair. o 3.55 (.138) S 3.81 (.150) 2.87 (.113) 4.50 (.177) Max. 3.12 (.123) Device 0.40 (.016) 1.65 (.065) 0.79 (.031) 19.81 (.780) 2.13 (.084) ARF448A ARF448B 20.32 (.800) 1.01 (.040) Gate Drain 1.40 (.055) Source Source Drain Gate 2.21 (.087) 03 2.59 (.102) 5.45 (.215) BSC 0 2 2-Plcs. 7- C v e R 8 0 9 4 0- 5 0

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