APTM50HM75STG Full bridge V = 500V DSS Series & parallel diodes R = 75mΩ typ @ Tj = 25°C DSon I = 46A @ Tc = 25°C MOSFET Power Module D Application • Motor control VBUS • Switched Mode Power Supplies • Uninterruptible Power Supplies CR1A CR3A Q1 CR1B CR3B Q3 Features • Power MOS 7® MOSFETs G1 G3 S1 OUT1 OUT2 S3 - Low RDSon - Low input and Miller capacitance CR2A CR4A - Low gate charge CR2B CR4B - Avalanche energy rated Q2 Q4 - Very rugged G2 G4 • Kelvin source for easy drive S2 S4 • Very low stray inductance NTC1 0/VBUS NTC2 - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant All ratings @ T = 25°C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Drain - Source Breakdown Voltage 500 V DSS T = 25°C 46 I Continuous Drain Current c D T = 80°C 34 A c I Pulsed Drain current 184 DM 3 V Gate - Source Voltage ±30 V 1 GS 0 2 RDSon Drain - Source ON Resistance 90 mΩ er, b P Maximum Power Dissipation T = 25°C 357 W o D c ct O EIAARR ARevpaelatintcivhee Acuvrarleanntc (hree pEentietrivgey and non repetitive) 4560 mAJ ev 6 E Single Pulse Avalanche Energy 2500 R AS – G T These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.See application note S 5 APT0502 on www.microsemi.com 7 M 0H 5 M T P www.microsemi.com 1–7 A

APTM50HM75STG Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V = 0V,V = 500V T = 25°C 100 I Zero Gate Voltage Drain Current GS DS j µA DSS V = 0V,V = 400V T = 125°C 500 GS DS j R Drain – Source on Resistance V = 10V, I = 23A 75 90 mΩ DS(on) GS D V Gate Threshold Voltage V = V , I = 2.5mA 3 5 V GS(th) GS DS D I Gate – Source Leakage Current V = ±30 V, V = 0V ±100 nA GSS GS DS Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance VGS = 0V 5600 C Output Capacitance V = 25V 1200 pF oss DS C Reverse Transfer Capacitance f = 1MHz 90 rss Q Total gate Charge 123 g V = 10V GS Q Gate – Source Charge V = 250V 33 nC gs Bus I = 46A Q Gate – Drain Charge D 65 gd Td(on) Turn-on Delay Time Inductive switching @ 125°C 18 T Rise Time VGS = 15V 35 r V = 333V ns T Turn-off Delay Time Bus 87 d(off) I = 46A D T Fall Time R = 5Ω 77 f G E Turn-on Switching Energy Inductive switching @ 25°C 755 on V = 15V, V = 333V µJ GS Bus E Turn-off Switching Energy I = 46A,R = 5Ω 726 off D G E Turn-on Switching Energy Inductive switching @ 125°C 1241 on V = 15V, V = 333V µJ GS Bus Eoff Turn-off Switching Energy ID = 46A, RG = 5Ω 846 R Junction to Case Thermal Resistance 0.35 °C/W thJC Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM I Maximum Reverse Leakage Current V =600V 250 µA RM R I DC Forward Current T = 70°C 30 A F c I = 30A 1.6 1.8 F V Diode Forward Voltage I = 60A 1.9 V F F I = 30A T = 125°C 1.4 F j T = 25°C 85 j Qtrr RReevveerrssee RReeccoovveerryy TCihmareg e VdIFi R/=d = t3 =40 0A200 V0A /µs TTjj == 12255°C°C 116300 nnCs ober, 2013 rr Tj = 125°C 700 Oct RthJC Junction to Case Thermal Resistance 1.2 °C/W 6 ev R – G T S 5 7 M 0H 5 M T P www.microsemi.com 2–7 A

APTM50HM75STG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM I Maximum Reverse Leakage Current V = 600V 250 µA RM R I DC Forward Current T = 70°C 30 A F c I = 30A 1.6 1.8 F V Diode Forward Voltage I = 60A 1.9 V F F I = 30A T = 125°C 1.4 F j T = 25°C 85 j t Reverse Recovery Time ns rr I = 30A F T = 125°C 160 V = 400V j R Q Reverse Recovery Charge di/dt = 200A/µs Tj = 25°C 130 nC rr T = 125°C 700 j R Junction to Case Thermal Resistance 1.2 °C/W thJC Thermal and package characteristics Symbol Characteristic Min Max Unit V RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V ISOL T Operating junction temperature range -40 150 J T Recommended junction temperature under switching conditions -40 Tmax -25 JOP J °C T Storage Temperature Range -40 125 STG T Operating Case Temperature -40 100 C Torque Mounting torque To heatsink M5 2.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol Characteristic Min Typ Max Unit R Resistance @ 25°C 50 kΩ 25 ∆R /R 5 % 25 25 B T = 298.15 K 3952 K 25/85 25 ∆B/B T =100°C 4 % C R R = 25 T: Thermistor temperature T exp⎢⎢⎣⎡B25/85⎜⎜⎝⎛T125 −T1⎟⎟⎠⎞⎥⎥⎦⎤ RT: Thermistor value at T SP4 Package outline (dimensions in mm) 3 1 0 2 er, b o ct O 6 v e R – G T S 5 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com M7 0H 5 M T P www.microsemi.com 3–7 A

APTM50HM75STG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 W) 0.35 0.9 C/ ° 0.3 e ( 0.7 c n 0.25 a d 0.5 e 0.2 p m al I 0.15 0.3 m r 0.1 e 0.1 h T 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 180 120 160 VDS> ID(on)xRDS(on)MAX 8V 100 250µs pulse test @ < 0.5 duty cycle A) 140 VGS=10&15V A) nt ( 120 7.5V nt ( 80 Curre 100 7V Curre 60 Drain 6800 6.5V Drain 40 TJ=25°C I, D 40 6V I, D 20 20 5.5V TJ=125°C 0 0 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 V , Drain to Source Voltage (V) V , Gate to Source Voltage (V) DS GS RDS(on) vs Drain Current DC Drain Current vs Case Temperature e 1.20 c 50 n Normalized to a N Resist 11..1105 VGS=10V @ 23A VGS=10V rrent (A) 40 urce O 1.05 VGS=20V ain Cu 30 o So 1.00 C Dr 20 ain t 0.95 I, DD 10 r D on) 0.90 0 013 R(DS 0 20 40 60 80 100 25 50 75 100 125 150 er, 2 ID, Drain Current (A) TC, Case Temperature (°C) ctob O 6 v e R – G T S 5 7 M 0H 5 M T P www.microsemi.com 4–7 A

APTM50HM75STG Breakdown Voltage vs Temperature ON resistance vs Temperature e n 1.2 nc 2.5 dow sista VIDG=S2=31A0V Source BreakNormalized) 1.1 Source ON remalized) 12..50 o e ( 1.0 o or Drain tVoltag Drain t(N 1.0 , SS 0.9 n), 0.5 BVD 25 50 75 100 125 150 (oS 25 50 75 100 125 150 D TJ, Junction Temperature (°C) R TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1.1 1000 e ag 1.0 A) shold Voltalized) 0.9 n Current ( 100 limliimtedit ebdy bRyD RSoDnSon 100µs H), Thre(Norm 00..78 I, DraiD 10 STiJn=g15le0 °pCulse 1ms T T =25°C (S C 10ms G V 0.6 1 25 50 75 100 125 150 1 10 100 1000 T , Case Temperature (°C) V , Drain to Source Voltage (V) C DS Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source Voltage 100000 14 nce (pF)10000 CCoissss e Voltage (V) 11028 ITDJ==4265A°C VDS=250VVDS=1V0D0SV=400V apacita 1000 o Sourc 6 C, C 100 Crss ate t 4 G 2 , S G 10 V 0 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 13 0 VDS, Drain to Source Voltage (V) Gate Charge (nC) er, 2 b o ct O 6 v e R – G T S 5 7 M 0H 5 M T P www.microsemi.com 5–7 A

APTM50HM75STG Delay Times vs Current Rise and Fall times vs Current 100 120 td(off) VDS=333V 80 100 RTJG==152Ω5°C tf s) L=100µH nd t(nd(off) 4600 VRTL=JDG=S1=1=05230Ω53µ3H°VC and t(ns)f 6800 ad(on) td(on) tr 40 tr t 20 20 0 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 ID, Drain Current (A) ID, Drain Current (A) Switching Energy vs Current Switching Energy vs Gate Resistance 2.5 4 Switching Energy (mJ) 01..5512 VRTL=JDG=S1=1=05230Ω53µ3H°VC EoEnoff Switching Energy (mJ) 0123....1235555 VITLD=JD==S141=06230A53µ3H°VCEoff Eon 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 I , Drain Current (A) Gate Resistance (Ohms) D Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 400 A) 350 ZVS VDD=S5=03%33V ent ( y (kHz) 235000 ZCS RTTJCG===17525Ω5°°CC ain Curr 100 TJ=150°C nc 200 Dr que 150 rse 10 e e Fr 100 ev T =25°C 50 swhitacrhdi ng , RDR J I 0 1 10 15 20 25 30 35 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 3 1 0 ID, Drain Current (A) VSD, Source to Drain Voltage (V) er, 2 b o ct 6 O v e R – G T S 5 7 M 0H 5 M T P www.microsemi.com 6–7 A

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