APTGF90H60T3G Full - Bridge V = 600V CES NPT IGBT Power Module I = 90A @ Tc = 80°C C Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  Motor control Features  Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design  Kelvin emitter for easy drive  Very low stray inductance  High level of integration  Internal thermistor for temperature monitoring 28 27 26 25 23 22 20 19 18 Benefits 29 16  Outstanding performance at high frequency 30 15 operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal 31 14 for easy PCB mounting 32 13  Low profile 2 3 4 7 8 10 11 12  Easy paralleling due to positive T of V C CEsat  Each leg can be easily paralleled to achieve a All multiple inputs and outputs must be shorted together phase leg of twice the current capability Example: 13/14 ; 29/30 ; 22/23 …  RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Breakdown Voltage 600 V CES T = 25°C 120 I Continuous Collector Current C C T = 80°C 90 A C 2 I Pulsed Collector Current T = 25°C 315 1 CM C 0 2 VGE Gate – Emitter Voltage ±20 V er, PD Maximum Power Dissipation TC = 25°C 416 W ctob O RBSOA Reverse Bias Safe Operating Area Tj = 125°C 200A@500V 2 ev R These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note G – APT0502 on www.microsemi.com T3 0 6 H 0 9 F G T P www.microsemi.com 1-8 A

APTGF90H60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current VGE = 0V Tj = 25°C 250 µA CES VCE = 600V Tj = 125°C 500 V Collector Emitter on Voltage VGE =15V Tj = 25°C 1.7 2.0 2.45 V CE(on) IC = 100A Tj = 125°C 2.2 V Gate Threshold Voltage V = V , I = 2mA 4 6 V GE(th) GE CE C I Gate – Emitter Leakage Current V = 20V, V = 0V 400 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 4400 ies GE C Output Capacitance V = 25V 645 pF oes CE C Reverse Transfer Capacitance f = 1MHz 401 res Qg Total gate Charge VGE = 15V 331 Q Gate – Emitter Charge V = 300V 40 nC ge Bus I =100A Q Gate – Collector Charge C 200 gc T Turn-on Delay Time Inductive Switching (25°C) 40 d(on) T Rise Time VGE = 15V 9 r V = 400V ns T Turn-off Delay Time Bus 120 d(off) I = 100A C Tf Fall Time RG = 1.2 15 T Turn-on Delay Time Inductive Switching (125°C) 42 d(on) T Rise Time VGE = 15V 10 r V = 400V ns T Turn-off Delay Time Bus 130 d(off) I = 100A C Tf Fall Time RG = 1.2 22 V = 15V E Turn-on Switching Energy GE T = 125°C 1 on V = 400V j Bus mJ I = 100A E Turn-off Switching Energy C T = 125°C 2 off R = 1.2 j G V ≤15V ; V = 360V I Short Circuit data GE Bus 450 A sc t ≤ 10µs ; T = 125°C p j Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Maximum Peak Repetitive Reverse Voltage 600 V RRM T = 25°C 35 I Maximum Reverse Leakage Current V =600V j µA RM R T = 125°C 600 j I DC Forward Current Tc = 90°C 60 A F I = 60A 1.8 2.2 F V Diode Forward Voltage I = 120A 2.2 V 12 F F 0 2 IF = 60A Tj = 150°C 1.5 er, b Qtrrr r RReevveerrssee RReeccoovveerryy TCihmareg e IVdFi R/=d = t6 =4040A00 0VA /µs TTTTjjj ==== 21215522°°55CC°°CC 1927665000 nnCs G – Rev 2 Octo j 3 T 0 6 H 0 9 F G T P www.microsemi.com 2-8 A

APTGF90H60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R Resistance @ 25°C 50 k 25 ∆R /R 5 % 25 25 B T = 298.15 K 3952 K 25/85 25 ∆B/B T =100°C 4 % C R R  25 T: Thermistor temperature T expB25/85T125 T1 RT: Thermistor value at T Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.3 R Junction to Case Thermal Resistance °C/W thJC Diode 0.65 V RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V ISOL T Operating junction temperature range -40 150 J T Storage Temperature Range -40 125 °C STG T Operating Case Temperature -40 100 C Torque Mounting torque To heatsink M4 2 3 N.m Wt Package Weight 110 g SP3 Package outline (dimensions in mm) 2 1 0 2 er, b o ct O 2 v e R – G 3 0T See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com H6 0 9 F G T P www.microsemi.com 3-8 A

APTGF90H60T3G Typical IGBT Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 200 200 250µs Pulse Test 250µs Pulse Test A) < 0.5% Duty cycle A) < 0.5% Duty cycle urrent ( 150 TJ=25°C TJ=125°C urrent ( 150 TJ=25°C C C or 100 or 100 Collect 50 Collect 50 TJ=125°C Ic, Ic, 0 0 0 1 2 3 4 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Transfer Characteristics Gate Charge 200 18 nt (A)150 2<5 00.µ5s% P Duulstey cTyecslet age (V) 1146 ITCJ == 12050°AC VCE=300VVCE=120V ctor Curre100 mitter Volt 11028 VCE=480V olle o E 6 c, C 50 TJ=125°C ate t 4 I 0 TJ=25°C , GGE 02 V 0 1 2 3 4 5 6 7 8 9 0 50 100 150 200 250 300 350 400 VGE, Gate to Emitter Voltage (V) Gate Charge (nC) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature n 1.20 140 w o Collector to Emitter BreakdVoltage (Normalized) 011...901000 c, DC Collector Current (A) 11022468000000 0.80 I 0 25 50 75 100 125 25 50 75 100 125 150 T, Junction Temperature (°C) T , Case Temperature (°C) J C 2 1 0 2 er, b o ct O 2 v e R – G 3 T 0 6 H 0 9 F G T P www.microsemi.com 4-8 A

APTGF90H60T3G Turn-On Delay Time vs Collector Current Turn-Off Delay Time vs Collector Current ay Time (ns) 5600 VGE = 15V y Time (ns) 115705 VGE=15V, td(on), Turn-On Del 234000 TVRjCG =E = =1 1 24.520°Ω0CV d(off), Turn-Off Dela 1102570505 VRCGE = = 1 4.20Ω0V VTGJE==2155T°CVJ=, 125°C 0 50 100 150 200 250 300 t 0 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current Current Fall Time vs Collector Current 60 60 50 VRCGE = = 1 4.20Ω0V 50 VCE = 400V, VGE = 15V, RG = 1.2Ω tr, Rise Time (ns) 234000 TVJG=E1=2155°VC, tf, Fall Time (ns) 234000 TJ = 125°C TJ = 25°C 10 10 0 0 0 50 100 150 200 250 300 0 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Turn-Off Energy Loss vs Collector Current 4 5 J) E, Turn-On Energy Loss (mJ)on 0123 VRCGE == 14.020ΩV TVJ=GE1=2155°CV, E, Turn-off Energy Loss (moff 01234 VVRCGGEE = == 1 41.205Ω0VV TJ = 125°C 0 50 100 150 200 250 300 0 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 6 250 VCE = 400V sses (mJ) 45 VTJG=E 1=2 155°CV Eon, 100A urrent (A) 125000 ching Energy Lo 123 Eon, 100A Eoff, 100A I, Collector CC 10500 October, 2012 wit 0 0 2 S v 0 2 4 6 8 10 12 0 200 400 600 e R Gate Resistance (Ohms) VCE, Collector to Emitter Voltage (V) G – 3 T 0 6 H 0 9 F G T P www.microsemi.com 5-8 A

APTGF90H60T3G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current 10000 240 z) pF) Cies ncy (kH 200 ZVS VDRG C= E= 5= 10 4.%20Ω0V e ( ue 160 ZCS TJ = 125°C nc eq TC= 75°C C, Capacita 1000 CCoreess Operating Fr 1248000 hard , max switching 100 F 0 0 10 20 30 40 50 0 40 80 120 160 200 VCE, Collector to Emitter Voltage (V) IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 W) 0.3 0.9 C/ ce (° 0.25 0.7 an 0.2 d e 0.5 mp 0.15 mal I 0.1 0.3 her 0.05 0.1 T 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 2 1 0 2 er, b o ct O 2 v e R – G 3 T 0 6 H 0 9 F G T P www.microsemi.com 6-8 A

APTGF90H60T3G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 W) 0.6 0.9 C/ e (° 0.5 0.7 c dan 0.4 0.5 e mp 0.3 mal I 0.2 0.3 Ther 0.1 00..105 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 240 175 s) TJ=125°C ent (A) 126000 Time (n 150 VR=400V d Curr 120 TJ=125°C overy 125 120 A war 80 Rec 100 I, ForF 40 TJ=25°C everse 75 3600 AA R 0 t, rr 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 400 800 1200 1600 2000 2400 VF, Anode to Cathode Voltage (V) -diF/dt (A/µs) C) 3 QRR vs. Current Rate Charge 50 IRRMvs. Current Rate of Charge Q, Reverse Recovery Charge (µRR 0120 TVJR==414020050°VC800 1200 1600 2006130020 0 AA A2400 I, Reverse Recovery Current (A)RRM 1234000000 TVJR==144200500°VC 800 1200 11263000 0A A200600 A2400 -diF/dt (A/µs) -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 400 100 Duty Cycle = 0.5 pF) 300 80 TJ=175°C citance ( 200 AV) (A) 60 apa I(F 40 C, C 100 20 0 0 2 1 1 10 100 1000 25 50 75 100 125 150 175 20 VR, Reverse Voltage (V) Case Temperature (°C) ber, o ct O 2 v e R – G 3 T 0 6 H 0 9 F G T P www.microsemi.com 7-8 A

APTGF90H60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life- support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part. 2 1 0 2 er, b o ct O 2 v e R – G 3 T 0 6 H 0 9 F G T P www.microsemi.com 8-8 A