APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. TO-247 A proprietary planar stripe design yields excellent reliability and manufacturability. Low D3PAK switching loss is achieved with low input capacitance and ultra low C "Miller" capaci- rss tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, APT9M100B APT9M100S even when switching at very high frequency. Reliability in fl yback, boost, forward, and D other circuits is enhanced by the high avalanche energy capability. Single die MOSFET G S FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low R • Buck converter DS(on) • Ultra low C for improved noise immunity • Two switch forward (asymmetrical bridge) rss • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current @ T = 25°C 9 I C D Continuous Drain Current @ TC = 100°C 6 A IDM Pulsed Drain Current 1 37 VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 575 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 5 A Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit P Total Power Dissipation @ T = 25°C 335 W D C R Junction to Case Thermal Resistance 0.37 θJC °C/W R Case to Sink Thermal Resistance, Flat, Greased Surface 0.11 θCS T ,T Operating and Storage Junction Temperature Range -55 150 J STG °C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L 0.22 oz 1 WT Package Weight 201 6.2 g 7- C 10 in·lbf v Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Re 1.1 N·m 8 0 1 8 0- 5 0

Static Characteristics T = 25°C unless otherwise specifi ed APT9M100B_S J Symbol Parameter Test Conditions Min Typ Max Unit VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 1000 V ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coeffi cient Reference to 25°C, ID = 250μA 1.15 V/°C RDS(on) Drain-Source On Resistance 3 VGS = 10V, ID = 5A 1.01 1.4 Ω VGS(th) Gate-Source Threshold Voltage V = V , I = 1mA 3 4 5 V ∆V /∆T Threshold Voltage Temperature Coeffi cient GS DS D -10 mV/°C GS(th) J V = 1000V T = 25°C 100 I Zero Gate Voltage Drain Current DS J μA DSS V = 0V T = 125°C 500 GS J IGSS Gate-Source Leakage Current VGS = ±30V ±100 nA Dynamic Characteristics T = 25°C unless otherwise specifi ed J Symbol Parameter Test Conditions Min Typ Max Unit gfs Forward Transconductance VDS = 50V, ID = 5A 10 S C Input Capacitance 2605 iss V = 0V, V = 25V Crss Reverse Transfer Capacitance GS f = 1MDHSz 35 C Output Capacitance 220 oss pF C 4 Effective Output Capacitance, Charge Related 90 o(cr) V = 0V, V = 0V to 667V GS DS C 5 Effective Output Capacitance, Energy Related 46 o(er) Q Total Gate Charge 80 g V = 0 to 10V, I = 5A, Qgs Gate-Source Charge GS V = 500DV 14 nC Qgd Gate-Drain Charge DS 38 td(on) Turn-On Delay Time Resistive Switching 12 t Current Rise Time V = 667V, I = 5A 11 r DD D ns t Turn-Off Delay Time R = 4.7Ω 6 , V = 15V 40 d(off) G GG t Current Fall Time 10 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current D IS (Body Diode) MshOoSwFinEgT t hseymbol 9 integral reverse p-n G A Pulsed Source Current junction diode ISM (Body Diode) 1 (body diode) S 37 V Diode Forward Voltage I = 5A, T = 25°C, V = 0V 1.0 V SD SD J GS t Reverse Recovery Time I = 5A, V = 100V 3 1040 ns rr SD DD Q Reverse Recovery Charge di /dt = 100A/μs, T = 25°C 19 μC rr SD J I ≤ 5A, di/dt ≤1000A/μs, V = 667V, dv/dt Peak Recovery dv/dt SD DD 10 V/ns T = 125°C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25°C, L = 46.00mH, R = 4.7Ω, I = 5A. J G AS 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 C is defi ned as a fi xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is defi ned as a fi xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -7.56E-8/V ^2 + 1.33E-8/V + 2.58E-11. DS (BR)DSS, o(er) DS DS 1 1 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 20 G 7- C Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. v e R 8 0 1 8 0- 5 0

APT9M100B_S 30 10 VGS = 10V TJ = 125°C 25 VGS= 6, 7, 8 & 9V 8 A) TJ = -55°C A) T ( 20 T ( N N E E 6 R R R R U 15 U C C RAIN 10 TJ = 25°C RIAN 4 5V D D , D , D I I 2 5 TJ = 125°C 4.5V T = 150°C 0 J 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) DS Figure 1, Output Characteristics Figure 2, Output Characteristics E 3.0 40 NC NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. STA 2.5 VGS = 10V @ 5A 35 @25 0<μ0S.5E %C. DPUUTLYS EC YTCESLET SI RE A) 30 E ON 2.0 ENT ( 25 URC 1.5 URR 20 TJ = -55°C O C O-S AIN 15 TJ = 25°C N-T 1.0 DR TJ = 125°C AI , D 10 R I D 0.5 , N) 5 O DS( 0 0 R -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 T, JUNCTION TEMPERATURE (°C) V , GATE-TO-SOURCE VOLTAGE (V) J GS Figure 3, R vs Junction Temperature Figure 4, Transfer Characteristics DS(ON) 14 4,000 C 12 1,000 iss E TJ = -55°C NC 10 F) CTA TJ = 25°C E (p DU 8 NC 100 CON 6 TJ = 125°C CITA Coss S A N P A A g, TRfs 4 C, C 10 Crss 2 0 1 0 1 2 3 4 5 6 0 200 400 600 800 1000 I , DRAIN CURRENT (A) V , DRAIN-TO-SOURCE VOLTAGE (V) D DS Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage 16 40 I = 5A GE (V) 14 D T (A) 35 TA 12 EN 30 OL VDS = 200V RR V 10 U 25 CE VDS = 500V N C TJ = 25°C UR 8 RAI 20 O D T = 150°C O-S 6 SE 15 J T V = 800V R 1 TE- 4 DS VE 10 201 V, GAGS 2 IRESD, 5 v C 7- 0 0 e R 0 2Q0 , TOT4A0L GAT6E0 CHA8R0G E (n1C0)0 120 0 V , 0S.O3 URCE0-.T6O -DRA0IN.9 VOLTA1G.2E (V)1.5 8 g SD 0 Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 81 0- 5 0

APT9M100B_S 60 60 IDM IDM A) 10 A) 10 T ( T ( EN EN Rds(on) R R 13μs UR 13μs UR 100μs N C 100μs N C 1ms AI 1 1ms AI 1 10ms , DRD Rds(on) 10ms , DRD TTJC = = 1 2550°°CC 10D0Cm lsine I 100ms I Scaling for Different Case & Junction 0.11 TTVJC D= =S 1 ,72 5D5°°RCCAIN1-0T O-SODUCR linCeE1 V0O0 LTAGE (V) 1000 0.11 TeVmIDDp S=e, r IaDDtu(RTrCeAs I=:N 12-50T° CO)-*S(TOJ U- TRCC)/E121 V50O0 LTAGE (V)1000 Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area 0.40 W) 0.35 D = 0.9 E (°C/ 0.30 0.7 C N 0.25 A D E P 0.20 0.5 M Note: MAL I 0.15 PDM t1 ER 0.3 t2 , THC 0.10 SINGLE PULSE Dtu1t =y FPauclstoe rD Du =rat iot1n/t2 ZθJ 0.05 0.1 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration TO-247 (B) Package Outline D3PAK Package Outline e1 SAC: Tin, Silver, Copper e3 100% Sn Plated 4.69 (.185) 4.98 (.196) 15.95 (.628) 13.41 (.528) 512...344199 (((...200059998))) 6.15 (.242) BSC 1156..4296 ((..661400)) 56..3280 ((..221424)) Drain(Heat Sink) 511...045877 (((...200056082))) 16.05(.632) 11..1054( (.0.04451)) 13.51(.532) Drain 2201..8406 ((..881495)) 3.50 (.138) R4e/1v8is/e9d5 1133..9799( (.5.55413)) R8/e2v9is/e9d7 1111..5611 ((..445537)) 3.81 (.150) 00..4566 ((..001282)) {3 Plcs} 1.27 (.050) C 7-2011 10..04106 ( .(0.1064)0) 1290..8312 ((..7880400.5))0 11(.1..047107 (().. 00M45a05x)). 1223DG....6181ar5372at ei((((....n001168125433)))) 2200....68017427 08((.. 11((..01005200))17)) 11..2322 ((..004582)) 5{122...490 P588l c(((s...200.178}582))) BS1C.40 (.055) Haanreeda P t34(L BlS..ea80aita16nsede k((d ..so 11(56fD L00re))aaidn)) v Source e Source 8 R 22..2519 ((..018072)) 5.45 (2.2-P1l5c)s B.SC GateDrain 10 Dimensions in Millimeters (Inches) Dimensions in Millimeters (Inches) 8 0- 5 0