APT84M50B2 APT84M50L 500V, 84A, 0.065Ω Max N-Channel MOSFET T-MaxTM Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264 A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low C "Miller" capaci- rss tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, APT84M50B2 APT84M50L even when switching at very high frequency. Reliability in fl yback, boost, forward, and D other circuits is enhanced by the high avalanche energy capability. Single die MOSFET G S FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low R • Buck converter DS(on) • Ultra low C for improved noise immunity • Two switch forward (asymmetrical bridge) rss • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current @ T = 25°C 84 I C D Continuous Drain Current @ TC = 100°C 53 A IDM Pulsed Drain Current 1 270 VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1845 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 42 A Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit P Total Power Dissipation @ T = 25°C 1135 W D C R Junction to Case Thermal Resistance 0.11 θJC °C/W R Case to Sink Thermal Resistance, Flat, Greased Surface 0.11 θCS T ,T Operating and Storage Junction Temperature Range -55 150 J STG °C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L 0.22 oz 1 WT Package Weight 6.2 g 8 -201 E 10 in·lbf v Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw e R 1.1 N·m 5 9 0 8 0- 5 Microsemi Website - http://www.microsemi.com 0

Static Characteristics T = 25°C unless otherwise specifi ed APT84M50B2_L J Symbol Parameter Test Conditions Min Typ Max Unit VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 V ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coeffi cient Reference to 25°C, ID = 250μA 0.60 V/°C RDS(on) Drain-Source On Resistance 3 VGS = 10V, ID = 42A 0.055 0.065 Ω VGS(th) Gate-Source Threshold Voltage V = V , I = 2.5mA 3 4 5 V ∆V /∆T Threshold Voltage Temperature Coeffi cient GS DS D -10 mV/°C GS(th) J V = 500V T = 25°C 100 I Zero Gate Voltage Drain Current DS J μA DSS V = 0V T = 125°C 500 GS J IGSS Gate-Source Leakage Current VGS = ±30V ±100 nA Dynamic Characteristics T = 25°C unless otherwise specifi ed J Symbol Parameter Test Conditions Min Typ Max Unit gfs Forward Transconductance VDS = 50V, ID = 42A 65 S C Input Capacitance 13500 iss V = 0V, V = 25V Crss Reverse Transfer Capacitance GS f = 1MDHSz 185 C Output Capacitance 1455 oss pF C 4 Effective Output Capacitance, Charge Related 845 o(cr) V = 0V, V = 0V to 333V GS DS Co(er) 5 Effective Output Capacitance, Energy Related 425 Q Total Gate Charge 340 g V = 0 to 10V, I = 42A, Qgs Gate-Source Charge GS V = 250DV 75 nC Qgd Gate-Drain Charge DS 155 td(on) Turn-On Delay Time Resistive Switching 60 t Current Rise Time V = 333V, I = 42A 70 r DD D ns t Turn-Off Delay Time R = 2.2Ω 6 , V = 15V 155 d(off) G GG t Current Fall Time 50 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current D IS (Body Diode) MshOoSwFinEgT t hseymbol 84 integral reverse p-n G A Pulsed Source Current junction diode ISM (Body Diode) 1 (body diode) S 270 V Diode Forward Voltage I = 42A, T = 25°C, V = 0V 1.0 V SD SD J GS t Reverse Recovery Time I = 42A 3 720 ns rr SD Q Reverse Recovery Charge di /dt = 100A/μs, T = 25°C 20 μC rr SD J I ≤ 42A, di/dt ≤1000A/μs, V = 100V, dv/dt Peak Recovery dv/dt SD DD 8 V/ns T = 125°C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25°C, L = 2.08mH, R = 25Ω, I = 42A. J G AS 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 C is defi ned as a fi xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is defi ned as a fi xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -3.14E-7/V ^2 + 7.31E-8/V + 2.09E-10. DS (BR)DSS, o(er) DS DS 011 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 2 5 - Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. E v e R 5 9 0 8 0- 5 0

APT84M50B2_L 350 160 VGS = 10V TJ = 125°C VGS= 7,8 & 10V 300 140 T = -55°C NT (A) 250 J NT (A) 112000 6V E E R 200 R R R CU TJ = 25°C CU 80 N 150 N RAI RIA 60 D 100 D , D , D 40 I TJ = 150°C I 5V 50 20 T = 125°C 4.5V J 0 0 0 5 10 15 20 25 0 5 10 15 20 25 30 V , DRAIN-TO-SOURCE VOLTAGE (V) V , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) DS Figure 1, Output Characteristics Figure 2, Output Characteristics E 2.5 280 NC NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. STA VGS = 10V @ 42A 240 @25 0<μ0S.5E %C. DPUUTLYS EC YTCESLET SI 2.0 E ON RE 1.5 ENT (A) 200 TJ = -55°C C R 160 R R U U T = 25°C O C J O-S 1.0 AIN 120 T = 125°C T R J AIN- , DD 80 R 0.5 I D , N) 40 O DS( 0 0 R -55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 T, JUNCTION TEMPERATURE (°C) V , GATE-TO-SOURCE VOLTAGE (V) J GS Figure 3, R vs Junction Temperature Figure 4, Transfer Characteristics DS(ON) 120 20,000 10,000 C iss 100 E TJ = -55°C DUCTANC 80 TJ = 1T2J5 °=C 25°C NCE (pF) 1000 CON 60 CITA Coss S A N P A 40 A R C 100 g, Tfs 20 C, Crss 0 10 0 10 20 30 40 50 60 70 80 90 0 100 200 300 400 500 I , DRAIN CURRENT (A) V , DRAIN-TO-SOURCE VOLTAGE (V) D DS Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage 16 280 I = 42A GE (V) 14 D T (A) 240 OLTA 12 VDS = 100V RREN 200 V 10 U CE VDS = 250V N C 160 UR 8 RAI TJ = 25°C O D 120 V, GATE-TO-SGS 642 VDS = 400V IREVERSE SD, 8400 TJ = 150°C v E 8 -2011 0 0 e 0 Q1g0,0 T OTAL2 0G0A TE C3H0A0R GE (4n0C0) 500 0 VSD, 0S.3O URCE0-.T6O -DRA0I.N9 VOLTA1.G2E (V)1.5 95 R Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 8 0- 5 0

APT84M50B2_L 300 300 100 I 100 I DM DM A) A) T ( T ( N N 13μs E 13μs E R 10 R 10 100μs R 100μs R N CU Rds(on) 11m0sms N CU Rds(on) 1m10sms , DRAID 1 100DmCs line , DRAID 1 TTJC = = 1 2550°°CC 100mDsC line I I Scaling for Different Case & Junction 0.11 TTVJC D= =S 1 ,72 5D5°°RCCAIN1-T0O -SOURCE V10O0L TAGE (V) 800 0.11 TeVmIDDp S=e, r IaDDtu(RTrCeAs I=:N 21-5T0°CO )-*S(TOJ U- TRCC)/E12 V510O0L TAGE (V)800 Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area 0.12 W) 0.10 D = 0.9 C/ CE (° 0.08 0.7 N A D E MP 0.06 0.5 Note: MAL I 0.04 PDM t1 ER 0.3 t2 , THC 0.02 SINGLE PULSE Dtu1t =y FPauclstoe rD Du =rat iot1n/t2 ZθJ 0.1 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration T-MAX™ (B2) Package Outline TO-264 (L) Package Outline e3 100% Sn Plated 4.69 (.185) 4.60 (.181) 5.31 (.209) 15.49 (.610) 5.21 (.205) 19.51 (.768) 1.49 (.059) 16.26 (.640) 1.80 (.071) 20.50 (.807) 2.49 (.098) 2.01 (.079) 3.10 (.122) 5.38 (.212) 3.48 (.137) 6.20 (.244) 5.79 (.228) n 20.80 (.819) 6.20 (.244) Drai 21.46 (.845) n Drai 2256..4489 ((11..000433)) 4.50 (.177) Max. 23..8172 ((..111233)) 2.29 (.090) 2.29 (.090) 2.69 (.106) 5 -2011 1.00.1406 ((..001460)) 1290..8312 ((..788000)) 11..0410 ((..004505)) 12DSG..61oar53aut ei((r..nc00e6854)) 1291..8319 ((..7884022)).69 (.106) DSGoarauteirnce E 0.48 (.019) 0.76 (.030) ev 22..2519 ((..018072)) 5.45 (.215) BSC 230...508904 (((...110013283))) 1.30 (23.0..715981 (()..111205)) 5 R These dimensions are equal to the TO-247 w2it-hPlocus.t the mounting hole. 5.45 (2.2-P1l5c)s B.SC 9 0 Dimensions in Millimeters (Inches) Dimensions in Millimeters (Inches) 8 0- 5 0