APT77N60BC6 APT77N60SC6 600V 77A 0.041Ω COOLMOS Super Junction MOSFET Power Semiconductors • Ultra Low RDS(ON) TO-247 • Low Miller Capacitance D3PAK • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package. G S MAXIMUM RATINGS All Ratings per die: T = 25°C unless otherwise specifi ed. C Symbol Parameter APT77N60B_SC6 UNIT V Drain-Source Voltage 600 Volts DSS Continuous Drain Current @ T = 25°C 77 C I D Continuous Drain Current @ T = 100°C 49 Amps C I Pulsed Drain Current 1 272 DM V Gate-Source Voltage Continuous ±20 Volts GS P Total Power Dissipation @ T = 25°C 481 Watts D C T ,T Operating and Storage Junction Temperature Range - 55 to 150 J STG °C T Lead Temperature: 0.063" from Case for 10 Sec. 300 L I Avalanche Current 2 13.4 Amps AR E Repetitive Avalanche Energy 2 ( Id =13.4A, Vdd = 50V ) 2.96 AR mJ E Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V ) 1954 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250μA) 600 Volts (DSS) GS D R Drain-Source On-State Resistance 3 (V = 10V, I = 44.4A) .037 .041 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = V , V = 0V, T = 25°C) 25 DS DSS GS C I μA DSS Zero Gate Voltage Drain Current (V = V , V = 0V, T = 150°C) 250 DS DSS GS C I Gate-Source Leakage Current (V = ±20V, V = 0V) ±100 nA 0 GSS GS DS 01 2 VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA) 2.5 3 3.6 Volts A 8- CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. ev R 0 1 "COOLMOS™ comprise a new family of transistors developed by Infi neon Technologies AG. "COOLMOS" is a trade- 72 mark of Infi neon Technologies AG." 50- Microsemi Website - http://www.microsemi.com 0

DYNAMIC CHARACTERISTICS APT77N60B_SC6 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 13600 iss V = 0V GS C Output Capacitance V = 25V 4400 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 290 rss Q Total Gate Charge 4 260 g V = 10V Q Gate-Source Charge VGS = 400V 38 nC gs DD I = 77A @ 25°C Q Gate-Drain ("Miller") Charge D 144 gd td(on) Turn-on Delay Time INDUCTIVE SWITCHING 18 tr Rise Time VVGS == 31800VV 27 ns td(off) Turn-off Delay Time I = 7DD7A @ 25°C 110 165 D t Fall Time R = 5.0Ω 8 12 f G E Turn-on Switching Energy 5 INDUCTIVE SWITCHING @ 25°C 1670 on V = 400V, V = 15V Eoff Turn-off Switching Energy DID = 77A, RG S= 5Ω 2880 D G μJ E Turn-on Switching Energy 5 INDUCTIVE SWITCHING @ 125°C 2300 on V = 400V, V = 15V E DD GS off Turn-off Switching Energy I = 77A, R = 5Ω 3100 D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 77 S Amps I Pulsed Source Current1 (Body Diode) 231 SM V Diode Forward Voltage 3 (V = 0V, I = -77A) 1 1.2 Volts SD GS S dv/ Peak Diode Recovery dv/ 6 15 V/ns dt dt Reverse Recovery Time t T= 25°C 950 ns rr (I = -77A, di/ = 100A/μs) j S dt Reverse Recovery Charge Q T= 25°C 32 μC rr (I = -77A, di/ = 100A/μs) j S dt Peak Recovery Current I T= 25°C 60 Amps RRM (I = -77A, di/ = 100A/μs) j S dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.26 °C/W θJC R Junction to Ambient 40 θJA 1 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-750 Method 3471 2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. P = E *f . Pulse width tp limited by Tj max. AV AR 6 Maximum 125°C diode commutation speed = di/dt 600A/μs 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 0.30 W) 0.25 D = 0.9 C/ CE (° 0.20 0.7 N A D PE 0.15 0.5 M Note: 2010 RMAL I 0.10 0.3 PDM t1 v A 8- , THEC 0.05 0.1 Duty Factotr2 D = t1/t2 0 Re ZθJ 0 0.05 SINGLE PULSE Peak TJ = PDM x ZθJC + TC 21 10-5 10-4 10-3 10-2 0.1 1 7 50- RECTANGULAR PULSE DURATION (SECONDS) 0 Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

Typical Performance Curves APT77N60B_SC6 250 25 V > I (ON) x R (ON)MAX. DS D DS 250μSEC. PULSE TEST 15V 10V @ <0.5 % DUTY CYCLE 200 00 T (A) 7.5V T (A) REN 150 7.0V REN 75 R R U U C 6.5V C N 100 N 50 RAI 6.0V RAI D D I, C 50 5.5V I, D 25 5V T= 25°C TJ= 1J25°C TJ= -55°C 0 0 0 5 10 15 20 25 30 0 2 4 6 8 V , DRAIN-TO-SOURCE VOLTAGE (V) V , GATE-TO-SOURCE VOLTAGE (V) DS GS FIGURE 2, Low Voltage Output Characteristics FIGURE 3, Transfer Characteristics E 1.80 80 C NORMALIZED TO N TA VGS = 10V @ 38.5A 70 S ESI 1.60 A) 60 N R NT ( O E 50 CE 1.40 RR UR VGS = 10V CU 40 O N O-S 1.20 RAI 30 T D AIN- VGS = 20V I, D20 R 1.00 D , n) 10 o DS( 0.80 0 R 0 40 80 120 160 200 25 50 75 100 125 150 I DRAIN CURRENT (A) T , CASE TEMPERATURE (C°) D, C FIGURE 4, R (ON) vs Drain Current FIGURE 5, Maximum Drain Current vs Case Temperature DS 1.20 3.00 N OW N O-SOURCE BREAKDE (NORMALIZED) 111...011505 RAIN-TO-SOURCE O NCE (NORMALIZED) 212...055000 DRAIN-TVOLTAG 1.00 , DDS(ON)RESISTA 1.00 , S 0.95 R 0.50 S D V B 0.90 0 -50 0 50 100 150 -50 0 50 100 150 T, JUNCTION TEMPERATURE (C°) T, Junction Temperature (°C) J J FIGURE 7, On-Resistance vs Temperature FIGURE 6, Breakdown Voltage vs Temperature E 1.20 800 G 1.10 A T 100 HRESHOLD VOLORMALIZED) 10..0900 N CURRENT (A) 10 10ms 100µs1ms (TH), TGS(N 00..7800 I, DRAID 1 100ms A 8-2010 V v e R 0.60 0.1 0 - 50 0 50 100 150 1 10 100 800 21 TC, Case Temperature (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0-7 FIGURE 8, Threshold Voltage vs Temperature FIGURE 9, Maximum Safe Operating Area 5 0

Typical Performance Curves APT77N60B_SC6 12,000 14 S) ID = 77A C T 10,000 iss OL 12 E (V VDS= 120V G 10 CE (pF) 1000 Coss VOLTA 8 VDS= 300V AN CE VDS= 480V CIT 100 UR 6 A O P S C, CA 10 Crss E-TO- 4 T A 2 G , S 0 VG 0 0 10 20 30 40 50 0 50 100 150 200 250 300 350 V , DRAIN-TO-SOURCE VOLTAGE (V) Q , TOTAL GATE CHARGE (nC) DS g FIGURE 10, Capacitance vs Drain-To-Source Voltage FIGURE 11, Gate Charges vs Gate-To-Source Voltage 350 400 RRENT (A) 100 TJ= +150°C s) 330500 td(off) U n RSE DRAIN C 10 TJ = =25°C and t (on)d(off) 122505000 TVRL JDG= D= 1= 01= 502 .4μ500°H Ω0CV E d( V t E 100 R , R ID 50 t d(on) 1 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 25 50 75 100 125 V SOURCE-TO-DRAIN VOLTAGE (V) I (A) SD, D FIGURE 12, Source-Drain Diode Forward Voltage FIGURE 13, Delay Times vs Current 00 6000 VDD = 400V VDD = 400V RG = 5.0Ω RG = 5.0 Ω 50 TL J= = 1 0102μ5°HC tr GY (μJ) 45000000 TLE JO= N= 1 i0n10c2lμ5u°HdCes Eon Eoff R diode reverse recovery. ns) NE t, and t(rf 00 tf TCHING E 23000000 WI 50 S 1000 0 0 0 25 50 75 100 125 10 30 50 70 90 110 130 ID (A) ID (A) FIGURE 14 , Rise and Fall Times vs Current FIGURE 15, Switching Energy vs Current 7000 J) 6000 VILTD JD= =D= 1 701=702 4Aμ50 °H0CV Eoff u Y ( 5000 EON includes G diode reverse recovery. E R on E 4000 N E G N 3000 10 CHI A 8-20 SWIT 2000 v 1000 e R 0 0 21 0 10 20 30 40 50 0-7 RG, GATE RESISTANCE (Ohms) 05 FIGURE 16, Switching Energy vs Gate Resistance

APT77N60B_SC6 10% Gate Voltage 90% Gate Voltage td(on) TJ = 125°C t TJ = 125°C d(off) t r t 90% f Collector Current Collector Current 5% 10% 5% 10% Collector Voltage 0 Collector Voltage Switching Energy Switching Energy Figure 17, Turn-on Switching Waveforms and Defi nitions Figure 18, Turn-off Switching Waveforms and Defi nitions AAPPTT3300DDFQ6600 VDD IC VCE G D.U.T. FigFuirgeu 1re9 ,2 I0n,d Iuncdtuivceti vSew Sitwchiticnhgi nTge sTte Csitr Ccuirictuit TO-247 Package Outline D3PAK Package Outline e3 100% Sn 4512....63449199 ((((....120080595998)))) 6.15 (.242) BSC 1156..4296 ((..661400)) 56..3280 ((..221424)) Drain(Heat Sink) 4511....90458877 ((((....120090566082)))) 1165..0955( (.6.63228)) 11..1054( (.0.04451)) 1133..5411( (.5.53228)) Drain 2201..8406 ((..881495)) R4/e1v8is/9e5d 1133..9799( (.5.55413)) R8/e2v9i/s9e7d 1111..5611 ((..445537)) 3.50 (.138) 3.81 (.150) 00..5466 ((..002128)) {3 Plcs} 1.27 (.050) 00..4709 ((..001361)) 1290..8312 ((..78480.5000)) 11(...041107 7(()..00 M4505a))x. 1223DG....6181ra5372at ie((((n....001168125433)))) 2200....68017427 08(( ..((11..01005200))17)) 11..2322 ((..004582)) 5{122...490 P588l c(((.s..200.}178582))) B1S.4C0 (.055) Haanreeda P34(tLB ..Sl80eaa16isatn ee((dk.. d11os 56f( D00L))eraadin)) 2010 22..2519 ((..018072)) 5.45 2(.-2P1lc5s). BSC Source GatDeraSionurce Rev A 8- Dimensions in Millimeters and (Inches) Dimensions in Millimeters (Inches) 0 21 0-7 05