APT5014BLL (G) APT5014SLL (G) 500V 35A 0.140ΩΩΩΩΩ POWER MOS 7 R MOSFET D3PAK TO-247 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering R DS(ON) and Q . Power MOS 7® combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. D •Lower Input Capacitance •Increased Power Dissipation •Lower Miller Capacitance •Easier To Drive G •Lower Gate Charge, Qg •TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified. C Symbol Parameter APT5014BLL-SLL(G) UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current @ T = 25°C 35 D C Amps I Pulsed Drain Current 1 140 DM VGS Gate-Source Voltage Continuous ±30 Volts VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ T = 25°C 403 Watts C P D Linear Derating Factor 3.22 W/°C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG °C T Lead Temperature: 0.063" from Case for 10 Sec. 300 L I Avalanche Current 1 (Repetitive and Non-Repetitive) 35 Amps AR E Repetitive Avalanche Energy 1 30 AR mJ E Single Pulse Avalanche Energy 4 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250µA) 500 Volts DSS GS D R Drain-Source On-State Resistance 2 (V = 10V, 17.5A) 0.140 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 I DS GS µA DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125°C) 500 DS GS C 4 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 200 6- VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 5 Volts B v e CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. R 6 0 APT Website - http://www.advancedpower.com 0 7 0- 5 0

DYNAMIC CHARACTERISTICS APT5014 BLL - SLL Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 3261 iss V = 0V GS Coss Output Capacitance VDS = 25V 704 pF C Reverse Transfer Capacitance f = 1 MHz 50 rss Qg Total Gate Charge 3 VGS = 10V 72 Qgs Gate-Source Charge VDD = 250V 20 nC I = 35A @ 25°C Q Gate-Drain ("Miller") Charge D 36 gd t Turn-on Delay Time RESISTIVE SWITCHING 11 d(on) V = 15V tr Rise Time VGS = 250V 6 DD ns td(off) Turn-off Delay Time ID = 35A @ 25°C 23 R = 1.6Ω t Fall Time G 3 f E Turn-on Switching Energy 6 INDUCTIVE SWITCHING @ 25°C 325 on V = 333V, V = 15V DD GS E Turn-off Switching Energy I = 35A, R = 5Ω 249 off D G Eon Turn-on Switching Energy 6 INDUVCTIV =E 3 S3W3VIT,C VHIN=G 1 @5 V125°C 545 µJ DD GS E Turn-off Switching Energy I = 35A, R = 5Ω 288 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 35 S Amps I Pulsed Source Current 1 (Body Diode) 140 SM V Diode Forward Voltage 2 (V = 0V, I = -35A) 1.3 Volts SD GS S t Reverse Recovery Time (I = -35A, dl /dt = 100A/µs) 510 ns rr S S Q Reverse Recovery Charge (I = -35A, dl /dt = 100A/µs) 10 µC rr S S dv/ Peak Diode Recovery dv/ 5 8 V/ns dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.31 θJC °C/W R Junction to Ambient 40 θJA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting Tj = +25°C, L = 2.12mH, RG = 25Ω, Peak IL = 35A temperature 5 dv/ numbers reflect the limitations of the test circuit rather than the dt 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% device itself. IS ≤ -35A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 W) 0.30 0.9 C/ E (° 0.25 C N 0.7 A D E 0.20 P M AL I 0.15 0.5 Note: 4 M 00 R M ev B 6-2 Z, THEJCθ 00..1005 00..13 SINGLE PULSE PDDuty Fta1ctort 2 D = t1/t2 6 R 0 0.05 Peak TJ = PDM x ZθJC + TC 00 10-5 10-4 10-3 10-2 10-1 1.0 7 0- RECTANGULAR PULSE DURATION (SECONDS) 5 FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0

Typical Performance Curves APT5014 BLL_SLL 100 15 &10V 8V ES) 80 R RC MODEL E P Junction M temp. (°C) T (A 60 7V N 0.119 0.0135F E R Power UR 20 6.5V (watts) C N 0.191 0.319F RAI 6V D 20 , D Case temperature. (°C) I 5.5V 5V 0 0 5 10 15 20 25 30 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 100 E 1.2 C NORMALIZED TO AN VGS = 10V @ 17.5A T ES) 80 SIS 1.15 R E E R MP ON 1.10 NT (A 60 RCE VGS=10V E U 1.05 R O UR 40 O-S VGS=20V N C TJ = +125°C N-T 1.0 RAI TJ = +25°C RAI I, DD 20 N), D 0.95 O TJ = -55°C (S 0 D 0.90 0 1 2 3 4 5 6 7 8 9 R 0 10 20 30 40 50 60 V , GATE-TO-SOURCE VOLTAGE (VOLTS) I , DRAIN CURRENT (AMPERES) GS D FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R (ON) vs DRAIN CURRENT DS 35 1.15 N W S) 30 DO 1.10 E K AMPER 25 E BREAALIZED) 1.05 DRAIN CURRENT ( 211050 DRAIN-TO-SOURCVOLTAGE (NORM 10..0905 , D 5 , S 0.90 I S D V B 0 0.85 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , CASE TEMPERATURE (°C) T, JUNCTION TEMPERATURE (°C) C J FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 1.2 E NC ID = 17.5A SISTA 2.0 VGS = 10V GE 1.1 E A N R OLT 1.0 URCE OALIZED) 1.5 HOLD VALIZED) 0.9 OM SM (ON), DRAIN-TO-SDS(NOR 100...050 V(TH), THREGS(NOR 000...876 ev B 6-2004 R -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 R T, JUNCTION TEMPERATURE (°C) T , CASE TEMPERATURE (°C) 6 J C 0 FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0 7 0- 5 0

Typical Performance Curves APT5014 BLL_SLL 140 10,000 OPERATION HERE LIMITED BY RDS (ON) Ciss S) E 50 R T (AMPE 100µS NCE (pF) 1,000 Coss N A AIN CURRE 10 1mS C, CAPACIT 100 DR Crss , D TC =+25°C I TJ =+150°C 10mS SINGLE PULSE 1 10 1 5 10 50 100 500 0 10 20 30 40 50 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS DS FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 16 200 TS) ID = 35A ES) L 14 R 100 O E V P AGE ( 12 VDS=100V T (AM 50 T N TJ =+150°C CE VOL 108 VDS=250V VDS=400V CURRE TJ =+25°C O-SOUR 6 E DRAIN 105 E-T 4 RS T E A V G 2 E , GS , RR V 0 ID 1 0 20 40 60 80 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 60 70 VDD = 333V td(off) 60 RG = 5Ω 50 TL J= = 1 10205µ°HC tf 50 ns) 40 VDD = 333V d t (d(off) 30 RTL JG= = =1 10520Ω5µ°HC d t(ns)f 40 an an 30 on) 20 t r td( 20 10 td(on) tr 10 0 0 0 10 20 30 40 50 60 0 10 20 30 40 50 60 I (A) I (A) D D FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT 1000 1400 VDD = 333V VDD = 333V 800 RTJG == 152Ω5°C 1200 ITDJ == 3152A5°C Eoff GY (J)µ LEd iOo=Nd e1i 0nr0ceµlvuHedresse recovery. GY (J)µ 1000 LEd iOo=Nd e1i 0nr0ceµlvuHedresse recovery. ER 600 ER 800 HING EN 400 Eon HING EN 600 Eon C C 004 WIT WIT 400 6-2 S 200 S B Eoff 200 ev 0 0 06 R 0 10 20 ID3 (0A) 40 50 60 0 5 R1G0, GA15TE R20ESI2S5TA3N0CE3 (O5hm40s) 45 50 0 FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 7 0- 5 0

Typical Performance Curves APT5014 BLL_SLL(G) Gate Voltage 10 % 90% td(on) TJ = 125 C td(off) Gate Voltage TJ = 125 C t r Drain Voltage 90% Drain Current 90% tf 5 % 10 % Drain Current 10% 0 Drain Voltage Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60 VDD ID VDS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline D3PAK Package Outline 4512....63449199 ((((....120080595998))))(cid:31)(cid:31) 6.15 (.242) BSC 1156..4296 ((..661400))(cid:31) 56..3280 ((..221424))(cid:31) Drain(cid:31)(Heat Sink) 4511....90458877 ((((....120090566082))))(cid:31)(cid:31) 1156..9055 (cid:31)((..662382))(cid:31) 11..0145 (cid:31)((..004415))(cid:31) 1133..4511 (cid:31)((..552382))(cid:31) Drain 2201..8406 ((..881495))(cid:31) R4/e1v8is/9e5d(cid:31) 1133..7999 (cid:31)((..554531))(cid:31) R8/e2v9i/s9e7d(cid:31) 1111..5611 ((..445537))(cid:31) 3.50 (.138)(cid:31) 3.81 (.150) 00..4566 ((..001282)) {3 Plcs}(cid:31) 1.27 (.050)(cid:31) 00..4709 ((..001361))(cid:31) 19.81 (.748.500)(cid:31) (.177) Max. 1223....61815372 ((((....001168125433))))(cid:31)(cid:31) 2200....68017427 08(( ..((11..01005200))17(cid:31)))(cid:31) 11..2322 ((..004582))(cid:31) 12..9088 ((..007882))(cid:31)1.40 (.055) Hea34(tB ..S80a16isn e((k.. 11o 56f( D00L))er(cid:31)(cid:31)aadin))(cid:31) 2004 20.32 (.800)11..0410 ((..004505))(cid:31) DGraatien 5{2.4 P5l c(.s2.}15) BSC(cid:31) aanred PLleaatedds(cid:31) B 6- 22..2519 ((..018072))(cid:31) 5.45 2(.-2P1lc5s). BSC Source GatDeraSionurce 6 Rev Dimensions in Millimeters and (Inches) Dimensions in Millimeters (Inches) 0 0 0-7 05