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APT2X61D20J产品简介:
ICGOO电子元器件商城为您提供APT2X61D20J由American Microsemiconductor, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 APT2X61D20J价格参考。American Microsemiconductor, Inc.APT2X61D20J封装/规格:二极管 - 整流器 - 阵列, Diode Array 2 Independent Standard 200V 60A Chassis Mount SOT-227-4, miniBLOC。您可以下载APT2X61D20J参考资料、Datasheet数据手册功能说明书,资料中有APT2X61D20J 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE DUAL 60A 200V SOT-227 |
产品分类 | 二极管,整流器 - 模块 |
品牌 | Microsemi Power Products Group |
数据手册 | http://www.microsemi.com/document-portal/doc_download/6165-apt2x61-60d20j-d-pdf |
产品图片 | |
产品型号 | APT2X61D20J |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | - |
不同If时的电压-正向(Vf) | 1.3V @ 60A |
不同 Vr时的电流-反向漏电流 | 250µA @ 200V |
二极管类型 | 标准 |
二极管配置 | 2 个独立式 |
供应商器件封装 | ISOTOP® |
包装 | 管件 |
反向恢复时间(trr) | 31ns |
安装类型 | 底座安装 |
封装/外壳 | SOT-227-4,miniBLOC |
标准包装 | 10 |
热阻 | * |
电压-DC反向(Vr)(最大值) | 200V |
电流-平均整流(Io)(每二极管) | 60A |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
New Diode Data Sheet By Darel Bidwell 2 3 2 3 2 3 7 2 2 1 4 1 4 1 4 OT- ® S Anti-Parallel Parallel APT2X60D20J APT2X61D20J APT2X61D20J 200V 60A "UL Recognized" ISOTOP® APT2X60D20J 200V 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses -Switchmode Power Supply -Inverters • Soft Recovery Characteristics • Low Noise Switching • Free Wheeling Diode -Motor Controllers • Popular SOT-227 Package • Cooler Operation -Converters • Snubber Diode • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • Induction Heating • High Blocking Voltage • Increased System Power Density • High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified. C Symbol Characteristic / Test Conditions APT2X61_60D20J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 200 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward Current (T = 122°C, Duty Cycle = 0.5) 60 F(AV) C I RMS Forward Current (Square wave, 50% duty) 107 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 600 FSM J T ,T Operating and StorageTemperature Range -55 to 175 J STG °C T Lead Temperature for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I = 60A 1.1 1.3 F V Forward Voltage I = 120A 1.4 Volts F F I = 60A, T = 125°C 0.9 F J V = V Rated 250 R R 5 IRM Maximum Reverse Leakage Current VR = VR Rated, TJ = 125°C 500 µA 2-200 D CT Junction Capacitance, VR = 200V 210 pF v e R 3 0 0 APT Website - http://www.advancedpower.com 2 3- 5 0
New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT2X61_60D20J Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 30 ns t Reverse Recovery Time - 31 rr I = 60A, di /dt = -200A/µs Q Reverse Recovery Charge F F - 60 nC rr V = 133V, T = 25°C R C I Maximum Reverse Recovery Current - 3 - Amps RRM t Reverse Recovery Time - 60 ns rr I = 60A, di /dt = -200A/µs Qrr Reverse Recovery Charge F F - 250 nC V = 133V, T = 125°C R C I Maximum Reverse Recovery Current - 7 - Amps RRM trr Reverse Recovery Time - 40 ns I = 60A, di /dt = -1000A/µs Q Reverse Recovery Charge F F - 540 nC rr V = 133V, T = 125°C R C IRRM Maximum Reverse Recovery Current - 24 Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .60 θJC °C/W R Junction-to-Ambient Thermal Resistance 20 θJA 1.03 oz W Package Weight T 29.2 g 10 lb•in Torque Maximum Mounting Torque 1.1 N•m APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70 W) 0.60 C/ 0.9 CE (° 0.50 N A 0.7 ED 0.40 P M L I 0.30 0.5 Note: A RM DM t1 E 0.20 0.3 P TH t2 , θJC 0.10 0.1 SINGLE PULSE Duty Factor D = t1/t2 Z 0.05 Peak TJ = PDM x ZθJC + TC 0 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) 0.159 °C/W 0.00560 J/°C 5 0 2-20 (Pwoawttesr) 0.255 °C/W 0.0849 J/°C D v e R 0.186 °C/W 0.489 J/°C 3 0 20 Case temperature (°C) 3- 5 0 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES APT2X61_60D20J 200 80 TJ = 125°C 180 E VR = 133V 120A M RENT 116400 RY TI 60 60A 30A R E CU 120 OV RWARD (A) 10800 TJ = 125°C RSE REC(ns) 40 I, FOF 6400 TJ = 150°C T T=J - =5 52°5C°C t, REVErr 20 J 20 0 0 0 0.5 1 1.5 2 0 200 400 600 800 1000 1200 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/µs) F F Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change 600 25 GE TVJR = = 112353°VC 120A ENT TVJR = = 112353°VC 120A HAR 500 URR 20 C C Y Y ER 400 60A ER 60A V V 15 RECO(nC) 300 30A RECO(A) E E 10 S S R 200 R E E 30A V V E E R R 5 Q, rr 100 , RM R I 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 -diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.4 120 Duty cycle = 0.5 TJ = 175°C ETERS A/µs) 11..20 trrQrr 100 AMIC PARAMalized to 1000 00..86 IRRM trr I(A) F(AV) 8600 Nm K, DYf(Nor 0.4 Q 40 rr 20 0.2 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature 1400 E 1200 C N A T 1000 CI A P N CA(pF) 800 O TI 600 NC 05 U 0 C, JJ 420000 D 2-2 v e 01 10 100 200 3 R Figure 8. JuVnRc,t RioEnV CEaRpSaEc iVtaOnLcTeA vGs.E R (eVv) erse Voltage 3-200 5 0
APT2X61_60D20J Vr +18V diF/dt Adjust APT20M36BLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current. RRM 5 0.25 IRRM 4 trr - Reverse Recovery Time, measured from zero crossing where diode 3 current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places) H=4.9 (.193) (4 places) r =(2 4 p.0la (c.1e5s)7 ) 4.0 (.157) 0.75 (.030) 12.6 (.496) 2255..24 ((01..909020)) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 2005 113450...911 (((..155.891748))5) AAPnTt2i-Xp6a0rDa2ll0eJl APTP2aXr6a1llDe2l0J 2- 30.3 (1.193) Anode 2 Cathode 1Cathode 1 Anode 1 D 3388..02 ((11..459064)) v e R 3 Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 0 0 3-2 ISOTOP® is a Registered Tr ademark of S GS Thomson . APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 05 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.