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  • 型号: APT2X30D120J
  • 制造商: American Microsemiconductor, Inc.
  • 库位|库存: xxxx|xxxx
  • 要求:
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APT2X30D120J产品简介:

ICGOO电子元器件商城为您提供APT2X30D120J由American Microsemiconductor, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 APT2X30D120J价格参考。American Microsemiconductor, Inc.APT2X30D120J封装/规格:二极管 - 整流器 - 阵列, Diode Array 2 Independent Standard 1200V 30A Chassis Mount SOT-227-4, miniBLOC。您可以下载APT2X30D120J参考资料、Datasheet数据手册功能说明书,资料中有APT2X30D120J 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE DUAL 30A 1200V SOT-227

产品分类

二极管,整流器 - 模块

品牌

Microsemi Power Products Group

数据手册

http://www.microsemi.com/document-portal/doc_download/6158-apt2x31-30d120j-c-pdfhttp://www2.microsemi.com/document-portal/doc_download/14813-power-products-group-ppg-catalog

产品图片

产品型号

APT2X30D120J

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同If时的电压-正向(Vf)

2.5V @ 30A

不同 Vr时的电流-反向漏电流

250µA @ 1200V

二极管类型

标准

二极管配置

2 个独立式

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

ISOTOP®

其它名称

APT2X30D120JMI
APT2X30D120JMI-ND

包装

管件

反向恢复时间(trr)

370ns

安装类型

底座安装

封装/外壳

SOT-227-4,miniBLOC

标准包装

10

热阻

*

电压-DC反向(Vr)(最大值)

1200V(1.2kV)

电流-平均整流(Io)(每二极管)

30A

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

New Diode Data Sheet By Darel Bidwell 2 3 2 3 2 3 7 2 2 1 4 1 4 1 4 OT- ® S Anti-Parallel Parallel APT2X30D120J APT2X31D120J APT2X31D120J 1200V 30A "UL Recognized" ISOTOP® APT2X30D120J 1200V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses -Switchmode Power Supply -Inverters • Soft Recovery Characteristics • Low Noise Switching • Free Wheeling Diode -Motor Controllers • Popular SOT-227 Package • Cooler Operation -Converters • Snubber Diode • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • Induction Heating • High Blocking Voltage • Increased System Power Density • High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified. C Symbol Characteristic / Test Conditions APT2X31_30D120J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1200 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward Current (T = 102°C, Duty Cycle = 0.5) 30 F(AV) C I RMS Forward Current (Square wave, 50% duty) 39 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 210 FSM J T ,T Operating and StorageTemperature Range -55 to 175 J STG °C T Lead Temperature for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I = 30A 2.0 2.5 F V Forward Voltage I = 60A 2.3 Volts F F I = 30A, T = 125°C 1.8 F J V = V Rated 250 R R 5 IRM Maximum Reverse Leakage Current VR = VR Rated, TJ = 125°C 500 µA 3-200 C CT Junction Capacitance, VR = 200V 32 pF v e R 7 1 0 APT Website - http://www.advancedpower.com 0 3- 5 0

New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT2X31_30D120J Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 31 ns t Reverse Recovery Time - 370 rr I = 30A, di /dt = -200A/µs Q Reverse Recovery Charge F F - 660 nC rr V = 800V, T = 25°C R C I Maximum Reverse Recovery Current - 5 - Amps RRM t Reverse Recovery Time - 500 ns rr I = 30A, di /dt = -200A/µs Qrr Reverse Recovery Charge F F - 3450 nC V = 800V, T = 125°C R C I Maximum Reverse Recovery Current - 12 - Amps RRM trr Reverse Recovery Time - 220 ns I = 30A, di /dt = -1000A/µs Q Reverse Recovery Charge F F - 4650 nC rr V = 800V, T = 125°C R C IRRM Maximum Reverse Recovery Current - 37 Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .61 θJC °C/W R Junction-to-Ambient Thermal Resistance 20 θJA 1.03 oz W Package Weight T 29.2 g 10 lb•in Torque Maximum Mounting Torque 1.1 N•m APT Reserves the right to change, without notice, the specifications and information contained herein. 1.20 W) 0.9 C/ 1.00 E (° C N 0.80 0.7 A D E P M 0.60 0.5 L I Note: A ERM 0.40 0.3 PDM t1 TH t2 Z, θJC 0.20 00..105 SINGLE PULSE PeaDk uTtJy =F aPcDtoMr xD Z =θ JtC1/ t+2 TC 0 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) 0.219 °C/W 0.00306 J/°C 5 0 0 Power 2 0.468 °C/W 0.0463 J/°C 3- (watts) C v Re 0.341 °C/W 0.267 J/°C 017 Case temperature (°C) 0 3- 5 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 0

TYPICAL PERFORMANCE CURVES APT2X31_30D120J 100 600 TJ = 125°C 90 E 60A VR = 800V ENT 80 Y TIM 500 CURR 7600 OVER 400 30A WARD (A) 50 TJ = 150°C SE REC(ns) 300 15A R 40 R I, FOF 3200 TJ = 125°C T T=J -=5 52°5C°C t, REVErr 210000 J 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 200 400 600 800 1000 1200 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/µs) F F Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change E 7000 TJ = 125°C NT 50 TJ = 125°C HARG 6000 V6R0 =A 800V URRE 40 VR = 800V 60A C C Y 5000 Y R R E E RECOV(nC) 4000 30A RECOV(A) 30 E 3000 E S S 20 R R 30A E E V 2000 V E E Q, Rrr 1000 15A , RRM 10 15A R I 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 -di /dt, CURRENT RATE OF CHANGE (A/µs) -di /dt, CURRENT RATE OF CHANGE (A/µs) F F Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.4 45 Duty cycle = 0.5 t 40 TJ = 175°C ETERS A/µs) 11..20 Qrr rr 35 AMIC PARAMalized to 1000 00..86 trr IRRM I(A) F(AV) 322050 Nm K, DYf(Nor 0.4 Q 1150 rr 0.2 5 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature 250 E C N 200 A T CI A N CAP(pF) 150 O NCTI 100 05 U 0 C, JJ 50 C 3-2 v e 01 10 100 200 7 R Figure 8. JuVnRc,t RioEnV CEaRpSaEc iVtaOnLcTeA vGs.E R (eVv) erse Voltage 3-001 5 0

APT2X31_30D120J Vr +18V diF/dt Adjust APT10035LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current. RRM 5 0.25 IRRM 4 trr - Reverse Recovery Time, measured from zero crossing where diode 3 current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places) H=4.9 (.193) (4 places) r =(2 4 p.0la (c.1e5s)7 ) 4.0 (.157) 0.75 (.030) 12.6 (.496) 2255..24 ((01..909020)) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 2005 113450...911 (((..155.891748))5) APATn2tiX-p30aDra1l2le0lJ APTP2Xa3ra1lDle1l20J 3- 30.3 (1.193) Anode 2 Cathode 1Cathode 1 Anode 1 C 3388..02 ((11..459064)) v e R 7 Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 1 0 3-0 ISOTOP® is a Registered Tr ademark of S GS Thomson . APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 05 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.