2 3 2 3 APT2X151DL60J APT2X150DL60J 1 4 1 4 600V 150A Anti-Parallel Parallel APT2X150DL60J APT2X151DL60J Ultrafast Soft Recovery Dual Rectifi er Diode 2 3 PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS 7 2 • Anti-Parallel Diode • Ultrafast Recovery Times (trr) • Low Losses 1 4 OT-2 -Switchmode Power Supply S -Inverters • Soft Recoverery Characteristics • L ow Noise Switching • Free Wheeling Diode • L ow Forward Voltage • Cooler Operation - Motor Controllers ISOTOPfi "filUe L# 1R45e5c9o2ngnized" - Converters • Low Forward Voltage • Higher Reliability Systems • Snubber Diode • High Blocking Voltage • Increased System Power • Uninterruptible Power Supply D e n s ity • Induction Heating • Low Leakage Current • High Speed Rectifi ers MAXIMUM RATINGS All Ratings per Diode: T = 25°C unless otherwise specifi ed. C Symbol Characteristic / Test Conditions Ratings Unit V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 600 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward current (T = 40°C, Duty Cycle = 0.5) 150 F(AV) C I RMS Forward Currrent (Square wave, 50% duty) 165 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45°C, 8.3 ms) 1000 FSM J T, T Operating and Storage Junction Temperature Range -55 to 175 °C J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit I = 150A 1.25 1.6 F V Forward Voltage I = 300A 2.0 Volts F F I = 150A, T = 125°C 1.25 F J V = 600V 25 R I Maximum Reverse Leakage Current μA RM V = 600V, T = 125°C 250 09 R J 0 2 C Junction Capacitance, V = 200V 139 pF 6 - T R B 1 Continuous current limited by package lead temperature. v e R 0 2 3 6 Microsemi Website - http://www.microsemi.com 2- 5 0

DYNAMIC CHARACTERISTICS APT2X151_150DL60J Symbol Characteristic / Test Conditions Min Typ Max Unit t Reverse Recovery Time I = 1A, di/dt = -15A/μs, V = 30V, T = 25°C 51 rr F F R J ns t Reverse Recovery Time 408 rr I = 150A, di/dt = -200A/μs Q Reverse Recovery Charge F F 2387 nC rr V = 400V, T = 25°C R C I Maximum Reverse Recovery Current 13 Amps RRM t Reverse Recovery Time 639 ns rr I = 150A, di/dt = -200A/μs Q Reverse Recovery Charge F F 7253 nC rr V = 400V, T = 125°C R C I Maximum Reverse Recovery Current 21 Amps RRM t Reverse Recovery Time 299 ns rr I = 150A, di/dt = -1000A/ Q Reverse Recovery Charge F F 12075 nC rr μs V = 400V, T = 125°C R C I Maximum Reverse Recovery Current 68 Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit R Junction-to-Case Thermal Resistance 0.56 °C/W θJC V RMS Voltage (50-60mHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 2500 Isolation 1.03 oz W Package Weight T 29.2 g 10 lb·in Torque Maximum Mounting Torque 1.1 N·m Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 0.6 W) 0.5 C/ E (° C 0.4 N A D E MP 0.3 L I Note: A ERM 0.2 PDM t1 H T t2 , ZθJC 0.1 PeaDk uTtJy =F aPcDtoMr xD Z =θJtC1 /t+2TC 0 10-5 10-4 10-3 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 9 0 0 2 6 - B v e R 0 2 3 6 2- 5 0

TYPICAL PERFORMANCE CURVES APT2X151_150DL60J 400 700 T= 125°C TJ = 125°C 350 J 600 150A VR = 400V T (A) 300 TJ= 55°C TJ= 150°C ENT (A) 500 75A N 250 R RE T= 25°C UR 400 R J C D CU 200 TOR 300 R 150 C A E RW 100 OLL 200 O C I, FF 50 t, rr 100 0 0 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 V , ANODE-TO-CATHODE VOLTAGE (V) -di/dt, CURRENT RATE OF CHANGE (A/μs) F F FIGURE 2, Forward Current vs. Forward Voltage FIGURE 3, Reverse Recovery Time vs. Current Rate of Change Y CHARGE 1124000000 TVJR = = 1 42050°VC 150A URRENT 678000 TVJR = = 1 42050°VC 150A R 10000 75A C SE RECOVE(nC)68000000 RECOVERY (A)4500 75A REVER 4000 ERSE 2300 , Qrr REV 2000 , M 10 R R 0 I 0 0 200 400 600 800 1000 0 200 400 600 800 1000 -di/dt, CURRENT RATE OF CHANGE (A/μs) -di/dt, CURRENT RATE OF CHANGE (A/μs) F F FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 1.2 200 RS 1 116800 AMIC PARAMETEzed to 1000A/μs) 00..68 IQRtRRRRMR I (A)F(AV) 11180240000 Nali 0.4 Ym 60 K, Df(Nor 0.2 40 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J FIGURE 6, Dynamic Parameters vs Junction Temperature FIGURE 7, Maximum Average Forward Current vs. Case Temperature 1400 F) 1200 p E ( C N 1000 A T CI A 800 P A C N 600 9 O 0 TI 20 NC 400 6 - JU B C, J 200 ev R 0 1 10 100 500 320 6 FIGURE 8, JuVnRc, tRioEnV CEaRpSaEc iVtaOnLcTeA vGsE. R(Ve)v e r s e V o l t a g e 052-

APT2X151_150DL60J Vr +18V diF/dt Adjust 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 6 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current. RRM 5 0.25 IRRM 4 trr - Reverse Recovery Time, measured from zero crossing where diode 3 current goes from positive to negative, to the point at which the straight Slope = diM/dt 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places) H=4.9 (.193) (4 places) 25.2 (0.992) r = 4.0 (.157) (2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) Anti-parallel Parallel 15.1 (.594) APT2X100D60J APT2X101D60J 30.1 (1.185) 9 30.3 (1.193) Anode 2 Cathode 1 Cathode 1 Anode 1 0 0 2 38.0 (1.496) 6 - 38.2 (1.504) B v e 0 R Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 2 63 2- 5 0

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