2 3 2 3 2 3 7 2 2 - 1 4 T 1 4 1 4 O S Anti-Paralle l Parallel APT2X101D40J 400V 100A APT2X100D40J APT2X101D40J APT2X100D40J 400V 100A "UL Recognized" ISOTOP® file # E145592 DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses -Switchmode Power Supply -Inverters • Soft Recovery Characteristics • Low Noise Switching • Free Wheeling Diode • Popular SOT-227 Package • Cooler Operation -Motor Controllers -Converters • Low Forward Voltage • Higher Reliability Systems • Snubber Diode • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating Density • High Speed Rectifi ers • Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specifi ed. C Symbol Characteristic / Test Conditions APT2X101_100D40J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 400 Volts RRM V Maximum Working Peak Reverse Voltage RWM I (AV) Maximum Average Forward Current (T = 112°C, Duty Cycle = 0.5) 100 F C I (RMS) RMS Forward Current (Square wave, 50% duty) 164 Amps F I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 1000 FSM J T ,T Operating and StorageTemperature Range -55 to 175 °C J STG STATIC ELECTRICAL CHARACTERISTICS Symbol MIN TYP MAX UNIT I = 100A 1.3 1.5 F VF Forward Voltage I F = 200A 1.6 Volts I = 100A, T = 125°C 1.2 F J V = V Rated 500 R R I Maximum Reverse Leakage Current μA RM VR = VR Rated, TJ = 125°C 1000 11 0 2 CT Junction Capacitance, VR = 200V 260 pF G 3- v e R 7 0 0 4 Microsemi Website - http://www.microsemi.com 3- 5 0

DYNAMIC CHARACTERISTICS APT2X101_100D40J Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C - 37 ns trr Reverse Recovery Time - 50 I = 100A, di /dt = -200A/μs Qrr Reverse Recovery Charge F V = 268VF, T = 25°C - 150 nC R C I Maximum Reverse Recovery Current - 6 7 Amps RRM trr Reverse Recovery Time - 150 ns I = 100A, di /dt = -200A/μs Qrr Reverse Recovery Charge F F - 1050 nC V = 268V, T = 125°C R C IRRM Maximum Reverse Recovery Current - 13 17 Amps trr Reverse Recovery Time - 90 ns I = 100A, di /dt = -800A/μs Qrr Reverse Recovery Charge FV = 268V,F T = 125°C - 2100 nC R C IRRM Maximum Reverse Recovery Current - 39 Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .42 θJC °C/W R Junction-to-Ambient Thermal Resistance 20 θJA 1.03 oz W Package Weight T 29.2 g 10 lb•in Torque Maximum Terminal & Mounting Torque 1.1 N•m Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein. 0.45 C/W) 0.40 0.9 E (° 0.35 C 0.7 N 0.30 A D PE 0.25 0.5 M Note: L I 0.20 RMA 0.15 0.3 PDM t1 E t2 H 0.10 Z, TθJC 0.05 00.0.15 SINGLE PULSE PeakD TutJy =F aPcDtoMr D x =ZθJtC1 /t+2 TC 0 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 1 1 0 2 3- G v e R 7 0 0 4 3- 5 0

TYPICAL PERFORMANCE CURVES APT2X101_100D40J 300 160 200A 250 ME 140 100A ENT Y TI 120 50A CURR 200 OVER 100 WARD (A) 150 SE REC(ns) 80 R R 60 O 100 E F V I, F 50 TJ = 125°C TJ = 25°C t, RErr 40 T = 150°C T = -55°C 20 J J TJ=125°C 0 0 VR=268V 0 0.5 1 1.5 2 0 200 400 600 800 1000 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/μs) F F Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change 2500 40 RGE TVJR==122658°VC 200A RENT 35 TVJR==122658°VC 200A CHA 2000 CUR 30 100A Y Y R R RECOVE(nC) 1500 50A RECOVE(A) 2250 SE 1000 100A SE 15 50A R R E E EV EV 10 R 500 R Q, rr , RM 5 R I 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.4 200 Duty cycle = 0.5 Q 180 TJ=150°C 1.2 rr ERS s) trr 160 ETA/μ 1.0 140 M0 NAMIC PARAmalized to 80 00..86 IRRM trr I(A) F(AV) 11208000 K, DYf(Nor 0.4 Qrr 6400 0.2 20 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature 3000 E 2500 C N A T CI 2000 A P ON CA(pF) 1500 TI C UN 1000 011 J 2 C, J 500 G 3- v e 0 R .3 1 10 100 200 7 Figure 8. JunVcRt,i oRnE VCEapRaScEit aVnOcLeT AvsG. ER (eVv)e rse Voltage 3-400 5 0

APT2X101_100D40J Vr +18V diF/dt Adjust APT50M50L2LL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current. RRM 5 0.25 IRRM 4 trr - Reverse Recovery Time, measured from zero crossing where diode 3 current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places ) H=4.9 (.193) (4 places) r =(2 4 p.0la (c.1e5s)7 ) 4.0 (.157) 0.75 (.030) 12.6 (.496) 2255..24 ((01..909020)) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) Anti-paralle l Parallel 15.1 (.594) APT2X100D40J APT2X101D40J 30.1 (1.185) 30.3 (1.193) Anode 2 Cathode 1 Cathode 1 Anode 1 38.0 (1.496) 38.2 (1.504) 1 1 0 2 G 3- Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 v e R 7 0 0 4 3- 5 0