2 3 2 3 2 3 7 2 -2 1 4 1 4 1 4 OT S Anti-Paralle l Parallel APT2X100D100J APT2X101D100J APT2X101D100J 1000V 95A "UL Recognized" ISOTOP® file # E145592 APT2X100D100J 1000V 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses -Switchmode Power Supply -Inverters • Soft Recovery Characteristics • Low Noise Switching • Free Wheeling Diode • Popular SOT-227 Package • Cooler Operation -Motor Controllers -Converters • Low Forward Voltage • Higher Reliability Systems • Snubber Diode • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating Density • High Speed Rectifi ers • Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specifi ed. C Symbol Characteristic / Test Conditions APT2X101_100D100J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1000 Volts RRM V Maximum Working Peak Reverse Voltage RWM I (AV) Maximum Average Forward Current (T = 77°C, Duty Cycle = 0.5) 95 F C I (RMS) RMS Forward Current (Square wave, 50% duty) 131 Amps F I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 1000 FSM J T ,T Operating and StorageTemperature Range -55 to 175 J STG °C T Lead Temperature for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol MIN TYP MAX UNIT I = 100A 1.9 2.5 F VF Forward Voltage I F = 200A 2.2 Volts I = 100A, T = 125°C 1.7 F J V = V Rated 250 R R I Maximum Reverse Leakage Current μA RM VR = VR Rated, TJ = 125°C 500 2011 3- CT Junction Capacitance, VR = 200V 110 pF v H e R 7 0 0 0 Microsemi Website - http://www.microsemi.com 3- 5 0

DYNAMIC CHARACTERISTICS APT2X101_100D100J Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C - 43 ns trr Reverse Recovery Time - 300 I = 100A, di /dt = -200A/μs Qrr Reverse Recovery Charge F V = 667VF, T = 25°C - 800 nC R C I Maximum Reverse Recovery Current - 7 - Amps RRM trr Reverse Recovery Time - 360 ns I = 100A, di /dt = -200A/μs Qrr Reverse Recovery Charge F F - 4050 nC V = 667V, T = 125°C R C IRRM Maximum Reverse Recovery Current - 19 - Amps trr Reverse Recovery Time - 170 ns I = 100A, di /dt = -1000A/μs Qrr Reverse Recovery Charge F V = 667VF, T = 125°C - 7400 nC R C IRRM Maximum Reverse Recovery Current - 70 Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .41 θJC °C/W R Junction-to-Ambient Thermal Resistance 20 θJA 1.03 oz W Package Weight T 29.2 g 10 lb•in Torque Maximum Terminal & Mounting Torque 1.1 N•m Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein. 0.45 C/W) 0.40 0.9 E (° 0.35 C 0.7 N 0.30 A D PE 0.25 0.5 M Note: L I 0.20 RMA 0.15 0.3 PDM t1 E t2 H 0.10 Z, TθJC 0.05 00.0.15 SINGLE PULSE PeakD TutJy =F aPcDtoMr D x =ZθJtC1 /t+2 TC 0 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 1 1 0 2 3- H v e R 7 0 0 0 3- 5 0

TYPICAL PERFORMANCE CURVES APT2X101_100D100J 300 600 TJ=125°C 250 ME 500 VR=667V ENT Y TI 200A RR 200 ER 400 WARD CU(A) 150 TJ = 150°C SE RECOV(ns) 300 100A 50A R R O 100 T = 125°C E 200 F J V I, F 50 TJ = 25°C t, RErr 100 T = -55°C J 0 0 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/μs) F F Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change 10000 80 GE TVJR==162657°VC ENT 70 TVJR==162657°VC 200A R 200A R A 8000 R Y CH 100A Y CU 60 R R VE 6000 VE 50 RECO(nC) RECO(A) 40 100A E 4000 E S S 30 R 50A R E E 50A EV EV 20 R 2000 R Q, rr , RM 10 R I 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 -diF/dt, CURRENT RATE OF CHANGE (A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.4 140 Duty cycle = 0.5 1.2 Q 120 TJ=150°C S t rr ETERA/μs) 1.0 rr 100 AMIC PARAMalized to 1000 00..86 trr IRRM (A) IF(AV) 8600 Nm K, DYf(Nor 0.4 Qrr 40 0.2 20 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature 1200 E 1000 C N A T CI 800 A P ON CA(pF) 600 TI C N 400 11 U 0 C, JJ 200 H 3-2 v e 0 R .6 1 10 100 200 7 Figure 8. JuVnRc,t iRoEnV CEaRpSaEci tVaOnLcTeA vGsE. R (Vev) erse Voltage 3-000 5 0

APT2X101_100D100J Vr +18V diF/dt Adjust APT75GP120B2LL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current. RRM 5 0.25 IRRM 4 trr - Reverse Recovery Time, measured from zero crossing where diode 3 current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places ) H=4.9 (.193) (4 places) r =(2 4 p.0la (c.1e5s)7 ) 4.0 (.157) 0.75 (.030) 12.6 (.496) 2255..24 ((01..909020)) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) Anti-paralle l Parallel 15.1 (.594) APT2x100DQ60J APT2x101DQ60J 30.1 (1.185) 30.3 (1.193) Anode 2 Cathode 1 Cathode 1 Anode 1 11 38.0 (1.496) 20 38.2 (1.504) 3- v H Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 e R 7 0 0 0 3- 5 0