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  • 型号: AP2162AFGEG-7
  • 制造商: Diodes Inc.
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ICGOO电子元器件商城为您提供AP2162AFGEG-7由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供AP2162AFGEG-7价格参考¥1.92-¥1.92以及Diodes Inc.AP2162AFGEG-7封装/规格参数等产品信息。 你可以下载AP2162AFGEG-7参考资料、Datasheet数据手册功能说明书, 资料中有AP2162AFGEG-7详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC PWR SW USB 2CH 1A 8-DFNUSB开关IC DUAL SWITCH 125mOhms 1A

产品分类

PMIC - 电源分配开关集成电路 - IC

品牌

Diodes Incorporated

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

开关 IC,USB开关IC,Diodes Incorporated AP2162AFGEG-7-

数据手册

点击此处下载产品Datasheet

产品型号

AP2162AFGEG-7

PCN设计/规格

点击此处下载产品Datasheet

Rds(On)

105 毫欧

RoHS指令信息

http://diodes.com/download/4349

产品种类

USB开关IC

供应商器件封装

8-DFN3030E(3x3)

其它名称

AP2162AFGEG-7DIDKR

内部开关

包装

Digi-Reel®

商标

Diodes Incorporated

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻—最大值

105 mOhms, 125 mOhms

封装

Reel

封装/外壳

8-DFN 裸露焊盘

封装/箱体

DFN-3030E-8

工作温度

-40°C ~ 85°C

开关数量

Dual

最大工作温度

+ 85 C

最小工作温度

- 40 C

标准包装

1

电压-输入

2.7 V ~ 5.5 V

电流限制

1.4A

电源电压-最大

5.5 V

电源电压-最小

2.7 V

电源电流

1 A

类型

USB 开关

系列

AP2162A

输出数

2

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PDF Datasheet 数据手册内容提取

AP2162A/ AP2172A 1A DUAL CHANNEL CURRENT-LIMITED POWER SWITCH WITH OUTPUT DISCHARGE Description Pin Assignments The AP2162A and AP2172A are dual channel current-limited ( Top View ) integrated high-side power switches optimized for Universal Serial Bus (USB) and other hot-swap applications. The family of devices GND 1 8 FLG1 complies with USB standards and available with both polarities of Enable input. IN 2 7 OUT1 The devices have fast short-circuit response time for improved overall EN1 3 6 OUT2 system robustness, and have integrated output discharge function to ensure completely controlled discharging of the output voltage EN2 4 5 FLG2 capacitor. They provide a complete protection solution for application subject to heavy capacitive loads and the prospect of short circuit, SO-8 and offer reverse current blocking, over-current, over-temperature and short-circuit protection, as well as controlled rise time and under- ( Top View ) voltage lockout functionality. A 7ms deglitch capability on the open- drain flag output prevents false over-current reporting and does not GND 1 8 FLG1 require any external components. IN 2 7 OUT1 All devices are available in SO-8, MSOP-8EP and U-DFN3030-8 EN1 3 6 OUT2 packages. EN2 4 5 FLG2 MSOP-8EP Features  Dual Channel Current-Limited Power Switch with Output ( Top View ) Discharge  Fast Short-Circuit Response Time: 2µs GND 1 8 FLG1  1.4A Accurate Current Limiting  Reverse Current Blocking IN 2 7 OUT1  85mΩ On-Resistance EN1 3 6 OUT2  Input Voltage Range: 2.7V - 5.5V EN2 4 5 FLG2  Built-In Soft-Start with 0.6ms Typical Rise Time  Short Circuit and Thermal Protection U-DFN3030-8  Fault Report (FLG) with Blanking Time (7ms typ)  ESD protection: 2kV HBM, 300V MM  Active High (AP2172A) or Active Low (AP2162A) Enable  Ambient Temperature Range: -40°C to +85°C Applications  SO-8, MSOP-8EP and DFN3030E-8 (Exposed Pad): Available  LCD TVs & Monitors in “Green” Molding Compound (No Br, Sb)  Set-Top-Boxes, Residential Gateways  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Laptops, Desktops, Servers,  Halogen and Antimony Free. “Green” Device (Note 3)  Printers, Docking Stations, HUBs  UL Recognized, File Number E322375  IEC60950-1 CB Scheme Certified Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. AP2162A/ AP2172A 1 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Typical Applications Circuit   AP2172A Enable Active High Power Supply IN OUT1 Load 2.7V to 5.5V 1uF 10uF* 10k 10k 1uF FLG1 OUT2 Load FLG2 1uF 10uF* ON EN1 OFF EN2 GND Note: * USB 2.0 requires 120F per hub Available Options Enable Pin Current Limit Recommended Maximum Part Number Channel (EN) (typ) Continuous Load Current AP2162A 2 Active Low 1.4A 1.0A AP2172A 2 Active High 1.4A 1.0A Pin Descriptions Pin Number Pin Name MSOP-8EP Function SO-8 U-DFN3030-8 GND 1 1 Ground IN 2 2 Voltage input pin EN1 3 3 Switch 1 enable input, active low (AP2142A) or active high (AP2152A) EN2 4 4 Switch 2 enable input, active low (AP2142A) or active high (AP2152A) FLG2 5 5 Switch 2 over-current and over-temperature fault report; open-drain flag is active low when triggered OUT2 6 6 Switch 2 voltage output pin OUT1 7 7 Switch 1 voltage output pin FLG1 8 8 Switch 1 over-current and over-temperature fault report; open-drain flag is active low when triggered Exposed Pad: Exposed Pad — Exposed Pad It should be connected to GND and thermal mass for enhanced thermal impedance. It should not be used as electrical ground conduction path. AP2162A/ AP2172A 2 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Functional Block Diagram FLG1 AP2162A, AP2172A Thermal Sense Deglitch EN1 Driver Current Limit UVLO GND Current OUT1 Sense Discharge IN Control Current OUT2 Sense Discharge UVLO Control FLG2 Current Driver EN2 Limit Deglitch Thermal Sense GND Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Parameter Ratings Unit ESD HBM Human Body Model ESD Protection 2 kV ESD MM Machine Model ESD Protection 300 V VIN Input Voltage 6.5 V VOUT Output Voltage VIN +0.3 V VEN , VFLG Enable Voltage 6.5 V ILOAD Maximum Continuous Load Current Internal Limited A TJ(MAX) Maximum Junction Temperature 150 °C TST Storage Temperature Range (Note 4) -65 to +150 °C Note: 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified T from -65°C to +150°C) ST Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VIN Input Voltage 2.7 5.5 V IOUT Output Current 0 1.0 A VIH High-Level Input Voltage on EN or EN 2 VIN V VIL Low-Level Input Voltage on EN or EN 0 0.8 V TA Operating Ambient Temperature Range -40 +85 °C AP2162A/ AP2172A 3 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Electrical Characteristics (@TA = +25°C, VIN = +5.0V, unless otherwise specified.) Symbol Parameter Test Conditions (Note 5) Min Typ Max Unit VUVLO Input UVLO 1.6 2.0 2.4 V ISHDN Input Shutdown Current Disabled, IOUT = 0 0.1 1 µA IQ Input Quiescent Current, Dual Enabled, IOUT = 0 115 180 µA ILEAK Input Leakage Current Disabled, OUT grounded 1 µA IREV Reverse Leakage Current Disabled, VIN = 0V, VOUT = 5V, IREV at VIN 0.01 0.1 µA SO-8 90 110 VIN = 5V, IOUT = 1A, MSOP-8EP, TA = +25°C U-DFN3030-8 85 105 RDS(ON) Switch On-Resistance VIN = 5V, IOUT = 1A, -40°C ≤ TA ≤ +85°C 135 mΩ SO-8 110 130 VIN = 3.3V, IOUT = 1A, MSOP-8EP, TA = +25°C U-DFN3030-8 105 125 VIN = 3.3V, IOUT = 1A, -40°C ≤ TA ≤ +85°C 170 ILIMIT Over-Load Current Limit VIN = 5V, VOUT = 4V, CL = 10µF -40°C ≤ TA ≤ +85°C 1.1 1.4 1.7 A ILIMIT_G Ganged Over-Load Current Limit OVIUN T=2 5 tVie,d V tOoUgTe t=h e4r.,8 CVL, O= U10Tµ1F & -40°C ≤ TA ≤ +85°C 2.2 2.8 3.4 A ITrig Current Limiting Trigger Threshold Output Current Slew rate (<100A/s), CL = 10µF 1.8 A Ganged Current Limiting Trigger OUT1 & OUT2 tied together, Output Current Slew rate ITrig_G Threshold (<100A/s), CL = 10µF 3.6 A OUTx connected to ground, device enabled into short IOS Short-Circuit Current per Channel circuit, CL = 10µF 1.4 A OUT1 & OUT2 connected to ground, device enabled into IOS_G Ganged Short-Circuit Current short-circuit, CL = 10µF 2.2 2.8 3.4 A TSHORT Short-Circuit Response Time VOUT = 0V to IOUT = ILIMIT (output shorted to ground) 2 µs VIL EN Input Logic Low Voltage VIN = 2.7V to 5.5V 0.8 V VIH EN Input Logic High Voltage VIN = 2.7V to 5.5V 2 V ISINK EN Input Leakage VEN = 0V to 5.5V 1 µA ILEAK-O Output Leakage Current Disabled, VOUT = 0V 0.5 1 µA TR Output Turn-On Rise Time CL = 1µF, RLOAD = 5Ω 0.6 1.5 ms TF Output Turn-Off Fall Time CL = 1µF, RLOAD = 5Ω 0.05 0.3 ms TD(ON) Output Turn-On Delay Time CL = 100µF, RLOAD = 5Ω 0.2 0.5 ms TD(OFF) Output Turn-Off Delay Time CL = 100µF, RLOAD = 5Ω 0.1 0.3 ms RFLG FLG Output FET On-Resistance IFLG = 10mA 20 40 Ω IFOH FLG Off Current VFLG = 5V 0.01 1 µA TBlank FLG Blanking Time CL = 10µF 4 7 15 ms RDIS Discharge Resistance (Note 6) VIN = 5V, disabled, IOUT =1mA 100 Ω TSHDN Thermal Shutdown Threshold Enabled, RLOAD =1kΩ 140 C THYS Thermal Shutdown Hysteresis 25 C SO-8 (Note 7) 115 θJA Thermal Resistance Junction-to-Ambient MSOP-8EP (Note 8) 75 °C/W U-DFN3030-8 (Note 8) 60 Notes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 6. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when V < V ). The IN UVLO discharge function offers a resistive discharge path for the external storage capacitor for limited time. 7. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout. 8. Test condition for MSOP-8EP and U-DFN3030-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground plane. AP2162A/ AP2172A 4 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Typical Performance Characteristics V V EN 50% 50% EN 50% 50% T T T D(OFF) T D(OFF) R R T T F F T T D(ON) 90% 90% D(ON) 90% 90% V V OUT OUT 10% 10% 10% 10% Figure 1 Voltage Waveforms: AP2162A (left), AP2172A (right) Figure 2 Response Time to Short Circuit Waveform All Enable Plots are for AP2162A Active Low Turn-On Delay and Rise Time Turn-Off Delay and Fall Time EN EN 5V/div 5V/div CL=1F Iin TA= +25°C 500mA/div I5in0 0mA/div RL=5Ω CL=1F V2Vo/udt iv TA= +25°C V2Vo/udt iv RL=5Ω 500µs/div 500µs/div AP2162A/ AP2172A 5 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Typical Performance Characteristics (cont.) Turn-On Delay and Rise Time Turn-Off Delay and Fall Time EN EN 5V/div 5V/div CL=100F TA= +25°C Iin Iin 500mA/div 500mA/div RL=5Ω Vout 2V/div Vout 2V/div CL=100F TA= +25°C RL=5Ω 500µs/div 500µs/div Short Circuit Current, Inrush Current with Device Enabled Into Short Different Load Capacitance EN EN 5V/div 5V/div CL=100F CL=220F CL=470F I5o0u0tm A/div VTCAILN===1 +52VF5 °C I5in0 0mA/div VTRAILN=== 55+ΩV2 5 °C 500µs/div 500µs/div 2 Ω Load Connected to Enabled Device 1 Ω Load Connected to Enabled Device VIN=5V VIN=5V TA= +25°C TA= +25°C CL=1F CL=1F FLG FLG 2V/div 2V/div Iout Iout 1A/div 1A/div 2ms/div 2ms/div AP2162A/ AP2172A 6 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Typical Performance Characteristics (cont.) Short Circuit with Blanking Time and Recovery Power On Vout FLG 5V/div 5V/div VIN=5V TA= +25°C TA= +25°C CL=1F I5o0u0tm A/div CL=1F RL=5Ω FLG 5V/div Vin 5V/div Iout Vout 1A/div 5V/div 20ms/div 1ms/div Power Off Device Enabled FLG TA= +25°C FLG 5V/div CL=1F 5V/div RL=5Ω Iout Iout 500mA/div 500mA/div Vin EN 5V/div 5V/div Vout Vout TA= +25°C 5V/div 5V/div CL=1F RL=5Ω 10ms/div 1ms/div Device Disabled UVLO Increasing FLG 5V/div Vin Iout TA= +25°C 2V/div 500mA/div CL=1F RL=5Ω Vout EN 5V/div 5V/div Iout 500mA/div Vout TA= +25°C 5V/div CL=1F RL=5Ω 1ms/div 1ms/div AP2162A/ AP2172A 7 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Typical Performance Characteristics (cont.) UVLO Decreasing UVLO Increasing (No Load) TA= +25°C Vin CL=1F Vin 2V/div RL=5Ω 2V/div Vout 5V/div Vout 5V/div Iout TA= +25°C 500mA/div CL=1F RL=0Ω 10ms/div 1ms/div Channel 1 Enabled and Shorted UVLO Decreasing (No Load) with Channel 2 Enabled VIN=5V TA= +25°C TA= +25°C V2Vin/ div CRLL==10ΩF V5Vo/udt1iv CL=1F FLG1 5V/div Vout 5V/div Vout2 5V/div FLG2 5V/div 20ms/div 5ms/div Channel 2 Enabled and Shorted Channels 1 and 2 Enabled and with Channel 1 Enabled Shorted Vout1 5V/div FLG1 VIN=5V 5V/div TA= +25°C CL=1F Vout2 5V/div FLG2 5V/div 5ms/div 5ms/div AP2162A/ AP2172A 8 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Typical Performance Characteristics (cont.) CL=100µF RL=5Ω TA= +25°C CL=100µF RL=5Ω TA= +25°C CL=1µF RL=5Ω TA= +25°C CL=1µF RL=5Ω TA= +25°C Vin=5.0V Vin=5.0V Vin=5.5V Vin=5.5V Vin=2.7V Vin=2.7V AP2162A/ AP2172A 9 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Typical Performance Characteristics (cont.) Vin=3.3V Vin=3.3V CL=1µF Vin=5V Vin=5V UVLO Rising UVLO Falling VIN=5V VOUT=4V CL=1µF VIN=5V TA= +25°C CL=1µF TA= +25°C CL=1µF AP2162A/ AP2172A 10 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Application Information Power Supply Considerations A 0.1μF to 1μF X7R or X5R ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the input and output pin(s) is recommended when the output load is heavy. This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing the output with a 1μF ceramic capacitor improves the immunity of the device to short-circuit transients. Over-Current and Short Circuit Protection An internal sensing FET is employed to check for over-current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting. Three possible overload conditions can occur. In the first condition, the output has been shorted to GND before the device is enabled or before VIN has been applied. The AP2162A/AP2172A senses the short circuit and immediately clamps output current to a certain safe level namely ILIMIT. In the second condition, an output short or an overload occurs while the device is enabled. At the instance the overload occurs, higher inrush current may flow for a very short period of time before the current limit function can react. The input capacitor(s) rapidly discharge through the device, activating current limit circuitry. Protection is achieved by momentarily opening the P-MOS high-side power switch and then gradually turning it on. After the current limit function has tripped (reached the over-current trip threshold), the device switches into current limiting mode and the current is clamped at ILIMIT. The threshold for activating current limiting is 1.4A typical per channel. In the third condition, the load has been gradually increased beyond the recommended operating current. The current is permitted to rise until the current-limit threshold (ITRIG) is reached or until the thermal limit of the device is exceeded. The AP2162A/AP2172A is capable of delivering current up to the current-limit threshold without damaging the device. Once the threshold has been reached, the device switches into its current limiting mode and is set at ILIMIT. FLG Response When an over-current or over-temperature shutdown condition is encountered, the FLG open-drain output goes active low after a nominal 7-ms deglitch timeout. The FLG output remains low until both over-current and over-temperature conditions are removed. Connecting a heavy capacitive load to the output of the device can cause a momentary over-current condition, which does not trigger the FLG due to the 7-ms deglitch timeout. The AP2162A/AP2172A is designed to eliminate false over-current reporting without the need of external components to remove unwanted pulses. Power Dissipation and Junction Temperature The low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (TA) and RDS(ON), the power dissipation can be calculated by: PD = RDS(ON)× I2 Finally, calculate the junction temperature: TJ = PD x RJA + TA Where: TA = Ambient temperature C RθJA = Thermal resistance PD = Total power dissipation Thermal Protection Thermal protection prevents the IC from damage when heavy-overload or short-circuit faults are present for extended periods of time. The AP2162A/AP2172A implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately 140°C due to excessive power dissipation in an over-current or short-circuit condition the internal thermal sense circuitry turns the power switch off, thus preventing the power switch from damage. Hysteresis is built into the thermal sense circuit allowing the device to cool down approximately 25°C before the switch turns back on. The switch continues to cycle in this manner until the load fault or input power is removed. The FLG open-drain output is asserted when an over-temperature shutdown or over-current occurs with 7-ms deglitch. AP2162A/ AP2172A 11 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Application Information (cont.) Under-Voltage Lockout (UVLO) Under-voltage lockout function (UVLO) keeps the internal power switch from being turned on until the power supply has reached at least 2V, even if the switch is enabled. Whenever the input voltage falls below approximately 2V, the power switch is quickly turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Discharge Function The discharge function of the device is active when enable is disabled or de-asserted. The discharge function with the N-MOS power switch implementation is activated and offers a resistive discharge path for the external storage capacitor. This is designed for discharging any residue of the output voltage when either no external output resistance or load resistance is present at the output. Host/Self-Powered HUBs Hosts and self-powered hubs (SPH) have a local power supply that powers the embedded functions and the downstream ports. This power supply must provide from 5.25V to 4.75V to the board side of the downstream connection under both full-load and no-load conditions. Hosts and SPHs are required to have current-limit protection and must report over-current conditions to the USB controller. Typical SPHs are desktop PCs, monitors, printers, and stand-alone hubs. Generic Hot-Plug Applications In many applications it may be necessary to remove modules or pc boards while the main unit is still operating. These are considered hot-plug applications. Such implementations require the control of current surges seen by the main power supply and the card being inserted. The most effective way to control these surges is to limit and slowly ramp the current and voltage being applied to the card, similar to the way in which a power supply normally turns on. Due to the controlled rise times and fall times of the AP2162A/AP2172A, these devices can be used to provide a softer start-up to devices being hot-plugged into a powered system. The UVLO feature of the AP2162A/AP2172A also ensures that the switch is off after the card has been removed, and that the switch is off during the next insertion. By placing the AP2162A/AP2172A between the VCC input and the rest of the circuitry, the input power reaches these devices first after insertion. The typical rise time of the switch is approximately 1ms, providing a slow voltage ramp at the output of the device. This implementation controls system surge current and provides a hot-plugging mechanism for any device. Ordering Information Package 7”/13” Tape and Reel Part Number Packaging Code Quantity Part Number Suffix AP21X2ASG-13 S SO-8 250/Tape & Reel -13 AP21X2AMPG-13 MP MSOP-8EP 2500/Tape & Reel -13 AP21X2AFGEG-7 FGE U-DFN3030-8 3000/Tape & Reel -7 AP2162A/ AP2172A 12 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Marking Information (1) SO-8 ( Top view ) 8 7 6 5 Logo 2 : 2 Channel YY : Year : 08, 09,10~ Part Number AP21XXA WW : Week : 01~52; 52 6 : Active Low 7 : Active High YY WW X X represents 52 and 53 week X : Internal Code G : Green 1 2 3 4 (2) MSOP-8EP (3) U-DFN3030-8 ( Top View ) XX : Identification Code X X Y : Year : 0~9 W : Week : A~Z : 1~26 week; YWX a~z : 27~52 week; z represents 52 and 53 week X : A~Z : Green Part Number Package Identification Code AP2162AFGEG-7 U-DFN3030-8 AA AP2172AFGEG-7 U-DFN3030-8 AB AP2162A/ AP2172A 13 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. (1) Package Type: SO-8 SO-8 Dim Min Max A - 1.75 54 A1 0.10 0.20 E1 E 0.2 Gauge Plane A2 1.30 1.50 A1 Seating Plane A3 0.15 0.25 L b 0.3 0.5 Detail ‘A’ D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 h 7°~9° e 1.27 Typ 45° h - 0.35 Detail ‘A’ A2 A A3 L 0.62 0.82  0 8 e b All Dimensions in mm D (2) Package Type: MSOP-8EP MSOP-8EP D Dim Min Max Typ A - 1.10 - A1 0.05 0.15 0.10 A2 0.75 0.95 0.86 D1 4X10° Ab3 00..2229 00..3489 00..3309 x E E2 0.25 c 0.08 0.23 0.15 Gauge Plane D 2.90 3.10 3.00 y Seating Plane D1 1.60 2.00 1.80 a E 4.70 5.10 4.90 1 e 8Xb 4X10° L EE12 21..9300 31..1700 31..0500 E3 Detail C E3 2.85 3.05 2.95 A1 A3 e - - 0.65 c L 0.40 0.80 0.60 A A2 a 0° 8° 4° x - - 0.750 D E1 y - - 0.750 See Detail C All Dimensions in mm (3) Package Type: U-DFN3030-8 U-DFN3030-8 A Type E A3 Dim Min Max Typ A1 A 0.57 0.63 0.60 A1 0 0.05 0.02 D A3   0.15 D2 b 0.20 0.30 0.25 L (x8) D 2.95 3.05 3.00 D2 2.15 2.35 2.25 E 2.95 3.05 3.00 E E2 e   0.65 E2 1.40 1.60 1.50 L 0.30 0.60 0.45 Z   0.40 All Dimensions in mm Z (x4) e b (x8) AP2162A/ AP2172A 14 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

AP2162A/ AP2172A Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package Type: SO-8 X Dimensions Value (in mm) X 0.60 Y 1.55 C1 C1 5.4 C2 1.27 C2 Y (2) Package Type: MSOP-8EP X C G Y Dimensions Value (in mm) C 0.650 G 0.450 X 0.450 Y2 Y1 X1 2.000 X1 Y 1.350 Y1 1.700 Y2 5.300 (3) Package Type: U-DFN3030-8 X (x8) C Dimensions Value (in mm) (xY8) C 0.65 C1 2.35 X 0.30 Y 0.65 Y1 1.60 Y1 Y2 Y2 2.75 C1 AP2162A/ AP2172A 15 of 16 April 2013 Document number: DS32192 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

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