Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 General Description Features The AP2111 is CMOS process low dropout linear • Output Voltage Accuracy: ±1.5% regulator with enable function, the regulator delivers • Output Current: 600mA (Min) a guaranteed 600mA (Min) continuous load current. • Foldback Short Current Protection: 50mA • Enable Function to Turn On/Off V OUT The AP2111 provides 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, • Low Dropout Voltage (3.3V): 4.8V regulated output and 0.8V to 5V adjustable 250mV (Typ) @ I =600mA OUT output, and provides excellent output accuracy 1.5%, • Excellent Load Regulation: 0.2%/A (Typ) it is also provides a excellent load regulation, line • Excellent Line Regulation: 0.02%/V (Typ) regulation and excellent load transient performance • Low Quiescent Current: 55μA (Typ) due to very fast loop response. The AP2111 has • Low Standby Current: 0.01μA (Typ) built-in auto discharge function. • Low Output Noise: 50μV RMS • PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz The AP2111 features low power consumption. • OTSD Protection • Stable with 1.0μF Flexible Cap: Ceramic, The AP2111 is available in SOIC-8, PSOP-8 Tantalum and Aluminum Electrolytic SOT-223 and SOT-23-5 packages. • Operating Temperature Range: -40°C to 85°C • ESD: MM 400V, HBM 4000V Applications • Laptop computer • Potable DVD • LCD Monitor SOIC-8 PSOP-8 SOT-223 SOT-23-5 Figure 1. Package Types of AP2111 Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 1

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Pin Configuration M Package MP Package (SOIC-8) (PSOP-8) GND 1 8 EN GND 1 8 EN VOUT 2 7 GN D VOUT 2 7 GND GND 3 6 GND GND 3 6 GND VIN 4 5 GND VIN 4 5 GND H/HA Package (SOT-223) 3 VIN 3 VOUT 2 VOUT 2 VIN 1 GND 1 GND K Package (SOT-23-5) EN 1 5 ADJ/NC GND 2 VIN 3 4 VOUT Figure 2. Pin Configuration of AP2111 (Top View) Pin Descriptions Pin Number Pin Name Function SOIC-8/PSOP-8 SOT-223(H) SOT-223(HA) SOT-23-5 4 3 2 3 VIN Input voltage 2 2 3 4 VOUT Output voltage Chip enable, H – normal work, L – 8 1 EN shutdown output 1, 3, 5, 6, 7 1 1 2 GND Ground Adjust output for ADJ version/No 5 ADJ/NC connected for fixed version Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 2

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Functional Block Diagram A (B) {C} A: SOIC-8/PSOP-8 B: SOT-223(H) C: SOT-223(HA) Figure 3. Functional Block Diagram of AP2111 for Fixed Version 1 3 EN UVLO & VIN Shutdown Logic Thermal Foldback Shutdown Current Limit 4 VOUT 3m 5 ADJ/NC V REF 2 GND SOT-23-5 Figure 4. Functional Block Diagram of AP2111 for Adjustable Version Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 3

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Ordering Information AP2111 - G1: Green Circuit Type Blank: Tube TR: Tape & Reel Package 1 . 2 : F ix e d O u tp u t 1 . 2 V M: SOIC-8 1.5: Fixed Output 1.5V MP: PSOP-8 1.8: Fixed Output 1.8V H/HA: SOT-223 2 . 5: Fixed Output 2.5V K: SOT-23-5 3.3: Fixed Output 3.3V 4.8: Fixed Output 4.8V ADJ: Adjustable Output Temperature Packing Package Part Number Marking ID Range Type AP2111M-1.2G1 2111M-1.2G1 Tube AP2111M-1.2TRG1 2111M-1.2G1 Tape & Reel AP2111M-1.5G1 2111M-1.5G1 Tube AP2111M-1.5TRG1 2111M-1.5G1 Tape & Reel AP2111M-1.8G1 2111M-1.8G1 Tube SOIC-8 -40 to 85°C AP2111M-1.8TRG1 2111M-1.8G1 Tape & Reel AP2111M-2.5G1 2111M-2.5G1 Tube AP2111M-2.5TRG1 2111M-2.5G1 Tape & Reel AP2111M-3.3G1 2111M-3.3G1 Tube AP2111M-3.3TRG1 2111M-3.3G1 Tape & Reel AP2111MP-1.2G1 2111MP-1.2G1 Tube AP2111MP-1.2TRG1 2111MP-1.2G1 Tape & Reel AP2111MP-1.5G1 2111MP-1.5G1 Tube AP2111MP-1.5TRG1 2111MP-1.5G1 Tape & Reel AP2111MP-1.8G1 2111MP-1.8G1 Tube PSOP-8 -40 to 85°C AP2111MP-1.8TRG1 2111MP-1.8G1 Tape & Reel AP2111MP-2.5G1 2111MP-2.5G1 Tube AP2111MP-2.5TRG1 2111MP-2.5G1 Tape & Reel AP2111MP-3.3G1 2111MP-3.3G1 Tube AP2111MP-3.3TRG1 2111MP-3.3G1 Tape & Reel AP2111H-1.2TRG1 GH11B Tape & Reel AP2111H-1.5TRG1 GH13G Tape & Reel AP2111H-1.8TRG1 GH11G Tape & Reel SOT-223(H) -40 to 85°C AP2111H-2.5TRG1 GH11H Tape & Reel AP2111H-3.3TRG1 GH11C Tape & Reel AP2111H-4.8TRG1 GH13D Tape & Reel Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 4

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Ordering Information (Continued) Temperature Packing Package Part Number Marking ID Range Type AP2111HA-1.2TRG1 GH11J Tape & Reel AP2111HA-1.5TRG1 GH14G Tape & Reel AP2111HA-1.8TRG1 GH11K Tape & Reel SOT-223(HA) -40 to 85°C AP2111HA-2.5TRG1 GH11L Tape & Reel AP2111HA-3.3TRG1 GH11M Tape & Reel AP2111HA-4.8TRG1 GH11N Tape & Reel AP2111K-1.5TRG1 G3S Tape & Reel SOT-23-5 -40 to 85°C AP2111K-ADJG1 G3Q Tube AP2111K-ADJTRG1 G3Q Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 5

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage V 6.5 V IN Operating Junction Temperature T 150 ºC Range J Storage Temperature Range T -65 to 150 ºC STG Lead Temperature (Soldering, 10sec) T 260 ºC LEAD SOIC-8 144 PSOP-8 143 Thermal Resistance (No Heatsink) θ ºC/W JA SOT-223 128 SOT-23-5 250 ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Supply Voltage V 2.5 6.0 V IN Operating Ambient Temperature T -40 85 °C Range A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 6

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics AP2111-1.2 Electrical Characteristic (Note 2) V =2.5V, C =1.0μF (Ceramic), C =1.0μF (Ceramic), Typical T =25°C, Bold typeface applies over -40°C≤T ≤85°C IN IN OUT A A ranges, unless otherwise specified (Note 3). Parameter Symbol Conditions Min Typ Max Unit V V Output Voltage V V =2.5V, 1mA ≤ I ≤ 30mA OUT 1.2 OUT V OUT IN OUT ×98.5% ×101.5% Maximum Output I V =2.5V, V =1.182V to 1.218V 600 mA Current OUT(Max) IN OUT (△V /V ) Load Regulation OUT OUT V =2.5V, 1mA ≤ I ≤600mA 0.2 %/A △I IN OUT OUT (△V /V ) Line Regulation OUT OUT 2.5V≤V ≤6V, I =30mA 0.02 %/V △V IN OUT IN I =10mA 1000 1300 OUT Dropout Voltage V I =300mA 1000 1300 mV DROP OUT I =600mA 1000 1300 OUT Quiescent Current I V =2.5V, I =0mA 55 80 μA Q IN OUT Standby Current I V =2.5V, V in OFF mode 0.01 1.0 μA STD IN EN Power Supply Ripple 0.5Vp-p f=100Hz 65 PSRR V =2.5V, dB Rejection Ratio IN I =100mA f=1kHz 65 OUT (△V /V ) Output Voltage OUT OUT I =30mA OUT ±100 ppm/°C Temperature Coefficient △T T =-40°C to 85°C A Short Current Limit I V =0V 50 mA SHORT OUT RMS Output Noise V No Load, 10Hz ≤ f ≤100kHz 50 μV NOISE RMS VEN High Voltage V Enable logic high, regulator on 1.5 6.0 IH V VEN Low Voltage V Enable logic low, regulator off 0 0.4 IL Start-up Time t No Load 20 μs S EN Pull Down Resistor R 3.0 mΩ PD VOUT Discharge R Set EN pin at Low 60 Ω Resistor DCHG Thermal Shutdown T 160 Temperature OTSD °C Thermal Shutdown T 30 Hysteresis HYOTSD SOIC-8 74.6 Thermal Resistance θ PSOP-8 43.7 °C /W (Junction to Case) JC SOT-223 50.9 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T =25°C. Over temperature specifications guaranteed by design only. A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 7

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-1.5 Electrical Characteristic (Note 2) V =2.5V, C =1.0μF (Ceramic), C =1.0μF (Ceramic), Typical T =25°C, Bold typeface applies over -40°C≤T ≤85°C IN IN OUT A A ranges, unless otherwise specified (Note 3). Parameter Symbol Conditions Min Typ Max Unit V V Output Voltage V V =2.5V, 1mA ≤ I ≤ 30mA OUT 1.5 OUT V OUT IN OUT ×98.5% ×101.5% Maximum Output I V =2.5V, V =1.478V to 1.523V 600 mA Current OUT(Max) IN OUT (△V /V ) Load Regulation OUT OUT V =2.5V, 1mA ≤ I ≤600mA 0.2 %/A △I IN OUT OUT (△V /V ) Line Regulation OUT OUT 2.5V≤V ≤6V, I =30mA 0.02 %/V △V IN OUT IN I =10mA 700 1000 OUT Dropout Voltage V I =300mA 700 1000 mV DROP OUT I =600mA 700 1000 OUT Quiescent Current I V =2.5V, I =0mA 55 80 μA Q IN OUT Standby Current I V =2.5V, V in OFF mode 0.01 1.0 μA STD IN EN Power Supply Ripple 0.5Vp-p f=100Hz 65 PSRR V =2.5V, dB Rejection Ratio IN I =100mA f=1kHz 65 OUT (△V /V ) Output Voltage OUT OUT I =30mA OUT ±100 ppm/°C Temperature Coefficient △T T =-40°C to 85°C A Short Current Limit I V =0V 50 mA SHORT OUT RMS Output Noise V No Load, 10Hz ≤ f ≤100kHz 50 μV NOISE RMS VEN High Voltage V Enable logic high, regulator on 1.5 6.0 IH V VEN Low Voltage V Enable logic low, regulator off 0 0.4 IL Start-up Time t No Load 20 μs S EN Pull Down Resistor R 3.0 mΩ PD VOUT Discharge R Set EN pin at Low 60 Ω Resistor DCHG Thermal Shutdown T 160 Temperature OTSD °C Thermal Shutdown T 30 Hysteresis HYOTSD SOIC-8 74.6 Thermal Resistance PSOP-8 43.7 θ °C /W (Junction to Case) JC SOT-223 50.9 SOT-23-5 150 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T =25°C. Over temperature specifications guaranteed by design only. A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 8

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-1.8 Electrical Characteristic (Note 2) V =2.8V, C =1μF (Ceramic), C =1μF (Ceramic), Typical T =25°C, Bold typeface applies over -40°C≤T ≤85°C ranges, IN IN OUT A A unless otherwise specified (Note 3). Parameter Symbol Conditions Min Typ Max Unit V V Output Voltage V V =2.8V, 1mA ≤ I ≤ 30mA OUT 1.8 OUT V OUT IN OUT ×98.5% ×101.5% V =2.8V, Maximum Output Current I IN 600 mA OUT(Max) V =1.773V to 1.827V OUT (△V /V ) V =1.8V, V =V +1V, Load Regulation OUT OUT OUT IN OUT 0.2 %/A △I 1mA ≤ I ≤600mA OUT OUT (△V /V ) OUT OUT Line Regulation △VIN 2.8V≤VIN≤6V, IOUT=30mA 0.02 %/V I =10mA 500 700 OUT Dropout Voltage V I =300mA 500 700 mV DROP OUT I =600mA 500 700 OUT Quiescent Current I V =2.8V, I =0mA 55 80 μA Q IN OUT Standby Current I V =2.8V, V in OFF mode 0.01 1.0 μA STD IN EN Ripple 0.5Vp-p f=100Hz 65 Power Supply Rejection PSRR V =2.8V, dB Ratio IN IOUT=100mA f=1kHz 65 OTeumtppuetr Vatoulrtea gCeo efficient (△VO△UTT/V OUT) ITOU=T-=4300°mCA to 85°C ±100 ppm/°C A Short Current Limit I V =0V 50 mA SHORT OUT RMS Output Noise V No Load, 10Hz ≤ f ≤100kHz 50 μV NOISE RMS VEN High Voltage V Enable logic high, regulator on 1.5 6.0 IH V VEN Low Voltage V Enable logic low, regulator off 0 0.4 IL Start-up Time t No Load 20 μs S EN Pull Down Resistor R 3.0 mΩ PD VOUT Discharge Resistor R Set EN pin at Low 60 Ω DCHG Thermal Shutdown T 160 Temperature OTSD °C Thermal Shutdown T 30 Hysteresis HYOTSD SOIC-8 74.6 Thermal Resistance 　θ PSOP-8 43.7 °C /W (Junction to Case) JC SOT-223 50.9 Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T =25°C. Over temperature specifications guaranteed by design only. A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 9

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-2.5 Electrical Characteristic (Note 2) V =3.5V, C =1μF (Ceramic), C =1μF (Ceramic), Typical T =25°C, Bold typeface applies over -40°C≤T ≤85°C ranges, IN IN OUT A A unless otherwise specified (Note 3). Parameter Symbol Conditions Min Typ Max Unit V V Output Voltage V V =3.5V, 1mA ≤ I ≤ 30mA OUT 2.5 OUT V OUT IN OUT ×98.5% ×101.5% V =3.5V, V =2.463V to Maximum Output Current I IN OUT 600 mA OUT(Max) 2.537V (△V /V ) V =2.5V, V =V +1V, Load Regulation OUT OUT OUT IN OUT 0.2 %/A △I 1mA ≤ I ≤600mA OUT OUT (△V /V ) Line Regulation OUT OUT 3.5V≤V ≤6V, I =30mA 0.02 %/V △V IN OUT IN I =10mA 5 8 OUT Dropout Voltage V I =300mA 125 200 mV DROP OUT I =600mA 250 400 OUT Quiescent Current I V =3.5V, I =0mA 55 80 μA Q IN OUT Standby Current I V =3.5V, V in OFF mode 0.01 1.0 μA STD IN EN Ripple 0.5Vp-p f=100Hz 65 Power Supply Rejection PSRR V =3.5V, dB Ratio IN IOUT=100mA f=1kHz 65 OTeumtppuetr Vatoulrtea gCeo efficient (△VO△UTT/V OUT) ITOU=T-=4300°mCA to 85°C ±100 ppm/°C A Short Current Limit I V =0V 50 mA SHORT OUT RMS Output Noise V No Load, 10Hz ≤ f ≤100kHz 50 μV NOISE RMS VEN High Voltage V Enable logic high, regulator on 1.5 6.0 IH V VEN Low Voltage V Enable logic low, regulator off 0 0.4 IL Start-up Time t No Load 20 μs S EN Pull Down Resistor R 3.0 mΩ PD VOUT Discharge Resistor R Set EN pin at Low 60 Ω DCHG Thermal Shutdown T 160 Temperature OTSD °C Thermal Shutdown T 30 Hysteresis HYOTSD SOIC-8 74.6 Thermal Resistance 　θ PSOP-8 43.7 °C /W (Junction to Case) JC SOT-223 50.9 Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T =25°C. Over temperature specifications guaranteed by design only. A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 10

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-3.3 Electrical Characteristic (Note 2) V =4.3V, C =1μF (Ceramic), C =1μF (Ceramic), Typical T =25°C, Bold typeface applies over -40°C≤T ≤85°C ranges, IN IN OUT A A unless otherwise specified (Note 3). Parameter Symbol Conditions Min Typ Max Unit V V Output Voltage V V =4.3V, 1mA ≤ I ≤ 30mA OUT 3.3 OUT V OUT IN OUT ×98.5% ×101.5% V =4.3V, V =3.251V to Maximum Output Current I IN OUT 600 mA OUT(Max) 3.350V (△V /V ) Load Regulation OUT OUT V =4.3V, 1mA ≤ I ≤600mA 0.2 %/A △I IN OUT OUT (△V /V ) Line Regulation OUT OUT 4.3V≤V ≤6V, I =30mA 0.02 %/V △V IN OUT IN I =10mA 5 8 OUT Dropout Voltage V I =300mA 125 200 mV DROP OUT I =600mA 250 400 OUT Quiescent Current I V =4.3V, I =0mA 55 80 μA Q IN OUT Standby Current I V =4.3V, V in OFF mode 0.01 1.0 μA STD IN EN Ripple 0.5Vp-p f=100Hz 65 Power Supply Rejection PSRR V =4.3V, dB Ratio IN IOUT=100mA f=1kHz 65 OTeumtppuetr Vatoulrtea gCeo efficient (△VO△UTT/V OUT) ITOU=T-=4300°mCA to 85°C ±100 ppm/°C A Short Current Limit I V =0V 50 mA SHORT OUT RMS Output Noise V No Load, 10Hz ≤ f ≤100kHz 50 μV NOISE RMS VEN High Voltage V Enable logic high, regulator on 1.5 6.0 IH V VEN Low Voltage V Enable logic low, regulator off 0 0.4 IL Start-up Time t No Load 20 μs S EN Pull Down Resistor R 3.0 mΩ PD VOUT Discharge Resistor R Set EN pin at Low 60 Ω DCHG Thermal Shutdown T 160 Temperature OTSD °C Thermal Shutdown T 30 Hysteresis HYOTSD SOIC-8 74.6 Thermal Resistance 　θ PSOP-8 43.7 °C /W (Junction to Case) JC SOT-223 50.9 Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T =25°C. Over temperature specifications guaranteed by design only. A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 11

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223) V =5.5V, C =1μF (Ceramic), C =1μF (Ceramic), Typical T =25°C, Bold typeface applies over -40°C≤T ≤85°C ranges, IN IN OUT A A unless otherwise specified (Note 3). Parameter Symbol Conditions Min Typ Max Unit V V Output Voltage V V =5.5V, 1mA ≤ I ≤ 30mA OUT 4.8 OUT V OUT IN OUT ×98.5% ×101.5% V =5.5V, V =4.751V to Maximum Output Current I IN OUT 600 mA OUT(Max) 4.850V (△V /V ) Load Regulation OUT OUT V =5.5V, 1mA ≤ I ≤600mA 0.2 %/A △I IN OUT OUT (△V /V ) Line Regulation OUT OUT 5.5V≤V ≤6V, I =30mA 0.02 %/V △V IN OUT IN I =10mA 5 8 OUT Dropout Voltage V I =300mA 100 200 mV DROP OUT I =600mA 200 400 OUT Quiescent Current I V =5.5V, I =0mA 55 80 μA Q IN OUT Standby Current I V =5.5V, V in OFF mode 0.01 1.0 μA STD IN EN Ripple 0.5Vp-p f=100Hz 65 Power Supply Rejection PSRR V =5.5V, dB Ratio IN IOUT=100mA f=1kHz 65 OTeumtppuetr Vatoulrtea gCeo efficient (△VO△UTT/V OUT) ITOU=T-=4300°mCA to 85°C ±100 ppm/°C A Short Current Limit I V =0V 50 mA SHORT OUT RMS Output Noise V No Load, 10Hz ≤ f ≤100kHz 50 μV NOISE RMS Thermal Shutdown T 160 Temperature OTSD Thermal Shutdown T 30 °C Hysteresis HYOTSD Thermal Resistance 　θ SOT-223 50.9 (Junction to Case) JC Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T =25°C. Over temperature specifications guaranteed by design only. A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 12

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-ADJ Electrical Characteristic (Note 2) (Only for SOT-23-5) V =2.5V, C =1.0μF (Ceramic), C =1.0μF (Ceramic), Typical T =25°C, Bold typeface applies over -40°C≤T ≤85°C IN IN OUT A A ranges, unless otherwise specified (Note 3). Parameter Symbol Conditions Min Typ Max Unit V V Reference Voltage V V =2.5V, 1mA ≤ I ≤ 30mA REF 0.8 REF V REF IN OUT ×98.5% ×101.5% Maximum Output I V =2.5V, V =0.788V to 0.812V 600 mA Current OUT(Max) IN REF (△V /V ) Load Regulation OUT OUT V =2.5V, 1mA ≤ I ≤600mA 0.2 %/A △I IN OUT OUT (△V /V ) Line Regulation OUT OUT 2.5V≤V ≤6V, I =30mA 0.02 %/V △V IN OUT IN Quiescent Current I V =2.5V, I =0mA 55 80 μA Q IN OUT Standby Current I V =2.5V, V in OFF mode 0.01 1.0 μA STD IN EN Power Supply Ripple 0.5Vp-p f=100Hz 65 PSRR V =2.5V, dB Rejection Ratio IN I =100mA f=1kHz 65 OUT (△V /V ) Output Voltage OUT OUT I =30mA OUT ±100 ppm/°C Temperature Coefficient △T T =-40°C to 85°C A Short Current Limit I V =0V 50 mA SHORT OUT RMS Output Noise V No Load, 10Hz ≤ f ≤100kHz 50 μV NOISE RMS VEN High Voltage V Enable logic high, regulator on 1.5 6.0 IH V VEN Low Voltage V Enable logic low, regulator off 0 0.4 IL Start-up Time t No Load 20 μs S EN Pull Down Resistor R 3.0 mΩ PD VOUT Discharge R Set EN pin at Low 60 Ω Resistor DCHG Thermal Shutdown T 160 Temperature OTSD °C Thermal Shutdown T 30 Hysteresis HYOTSD Thermal Resistance θ SOT-23-5 150 °C /W (Junction to Case) JC Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at T =25°C. Over temperature specifications guaranteed by design only. A Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 13

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics 1.6 4.0 1.4 3.5 V) 1.2 3.0 Output Voltage ( 00001.....24680 VNOoU TL= oTT 1Ta.AA2Ad===V -284550ooCoCC Output Voltage (V) 01122.....50505 VNOoU TL= oTTT3a.AAA3d===V-284550ooCCoC 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 5. Output Voltage vs. Input Voltage Figure 6. Output Voltage vs. Input Voltage 5.0 70 4.5 VOUT=4.8V 68 VIN=2.5V 4.0 TA=25OC 66 No Load A) 64 3.5 μ V) nt ( 62 ge ( 3.0 urre 60 ut Volta 22..05 I =0mA scent C 5568 Outp 1.5 IOOUUTT=100mA Quie 5524 1.0 IOUT=300mA 50 0.5 IOUT=600mA 48 0.0 46 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 -40 -20 0 20 40 60 80 Input Voltage (V) Temperature (oC) Figure 7. Output Voltage vs. Input Voltage Figure 8. Quiescent Current vs. Temperature Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 14

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 1.210 70 VIN=2.5V C =1μF 60 1.208 CIN =1μF OUT V) nt Current (A) μ 345000 utput Voltage ( 11..220046 e O Quiesc 20 No Lo TaAd=-40oC 1.202 IIOOUUTT==1100m0mAA 10 T=25oC I =300mA A OUT T=85oC I =600mA 0 A OUT 1.200 -40 -20 0 20 40 60 80 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Temperature (oC) Figure 9. Quiescent Current vs. Input Voltage Figure 10. Output Voltage vs. Temperature 1.3 3.35 1.2 V =4.3V 1.1 3.34 IN C =1μF 1.0 3.33 CIN =1μF V) 0.9 ge (V) 33..3312 OUT oltage ( 00..78 ut Volta 3.30 utput V 00..56 Outp 33..2289 IOUT=10mA O 00..34 VIN=2. 5TV= -40oC I =100mA 0.2 A 3.27 IOOUUTT=300mA 0.1 TA=25oC 3.26 I =600mA 0.0 T=85oC OUT A 3.25 -0.1 -40 -20 0 20 40 60 80 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Temperature (oC) Output Current (A) Figure 11. Output Voltage vs. Temperature Figure 12. Output Voltage vs. Output Current Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 15

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 4.0 1.2 V =2.0V 3.5 1.0 VIN=2.5V 3.0 V) VIN=5.0V Voltage (V) 22..05 put Voltage ( 00..68 VVIINNIN==56..50VV put 1.5 Out 0.4 Out 01..50 VIN=4 .T3AV=-40oC 0.2 TA=25oC T= 25oC CIN=1μF 0.0 TA= 85oC 0.0 COUT=1μF A -0.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Current (A) Output Current (A) Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current 4.0 5.0 3.5 4.5 VOUT=4.8V 4.0 3.0 V =4.0V ge (V) 2.5 VVIINN==45..30VV e (V) 33..05 a IN g Volt 2.0 VIN=5.5V olta 2.5 put 1.5 VIN=6.0V ut V 2.0 Out 1.0 T=25oC Outp 1.5 VVIN==55..03VV A 1.0 IN 0.5 CIN=1μF VIN=5.5V C =1μF 0.5 V =6.0V OUT IN 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Current (A) Output Current (A) Figure 15. Output Voltage vs. Output Current Figure 16. Output Voltage vs. Output Current Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 16

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 350 350 V =3.3V V =4.8V 300 OUT TA=-40oC 300 OUT TA=-40OC age (mV) 220500 TTAA== 2855ooCC ge (V) 220500 TTAA==2855OOCC Volt olta out 150 ut V 150 p o Dro 100 Drop 100 50 50 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Output Current (A) Output Current (A) Figure 17. Dropout Voltage vs. Output Current Figure 18. Dropout Voltage vs. Output Current 260 240 V =4.3V 70 IN 220 T=-40oC 65 A ent (A)μ 128000 TTAA== 2855ooCC B) 5650 Curr 160 R (d 50 V =2.5V Ground 111024000 PSR 4405 RVIiONpUpT=le I1=.02.V=51V0mA OUT 80 35 I =100mA OUT 60 30 IOUT=300mA 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 20 100 1k 10k 100k Output Current (A) Frequency (Hz) Figure 19. Ground Current vs. Output Current Figure 20. PSRR vs. Frequency Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 17

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) Figure 21. Load Transient Figure 22. Enable On Figure 23. Enable Off Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 18

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Application (Note 4) Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0μF ceramic capacitor is selected as input/output capacitors. Figure 24. Typical Application of AP2111 Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 19

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions SOIC-8 Unit: mm(inch) 4.700(0.185) 0.320(0.013) 5.100(0.201) 1.350(0.053) 7° 1.750(0.069) 8° 8° 7° 0.675(0.027) D 0.725(0.029) 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.100(0.004) 0.800(0.031) 0.300(0.012) 6) 0 0.200(0.008) 0 0. 0( 5 1 0. R 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.190(0.007) 1° 0.330(0.013) 0.250(0.010) 5° 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 20

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) PSOP-8 Unit: mm(inch) 3.202(0.126)3.402(0.134) Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 21

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) SOT-223 Unit: mm(inch) 6.700(0.264) 7.300(0.287) 3.300(0.130) 3.700(0.146) Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 22

Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 0.100(0.004) 0.200(0.008) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0° 0.950(0.037) 0.400(0.016) 8° TYP 1.800(0.071) 2.000(0.079) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) Dec. 2012 Rev. 1. 7 BCD Semiconductor Manufacturing Limited 23

BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IIMMPPOORRTTAANNTT NNOOTTIICCEE BBCCDD SSeemmiiccoonndduuccttoorr MMaannuuffaaccttuurriinngg LLiimmiitteedd rreesseerrvveess tthhee rriigghhtt ttoo mmaakkee cchhaannggeess wwiitthhoouutt ffuurrtthheerr nnoottiiccee ttoo aannyy pprroodduuccttss oorr ssppeecciiffii-- ccaattiioonnss hheerreeiinn.. BBCCDD SSeemmiiccoonndduuccttoorr MMaannuuffaaccttuurriinngg LLiimmiitteedd ddooeess nnoott aassssuummee aannyy rreessppoonnssiibbiilliittyy ffoorr uussee ooff aannyy iittss pprroodduuccttss ffoorr aannyy ppaarrttiiccuullaarr ppuurrppoossee,, nnoorr ddooeess BBCCDD SSeemmiiccoonndduuccttoorr MMaannuuffaaccttuurriinngg LLiimmiitteedd aassssuummee aannyy lliiaabbiilliittyy aarriissiinngg oouutt ooff tthhee aapppplliiccaattiioonn oorr uussee ooff aannyy iittss pprroodduuccttss oorr cciirrccuuiittss.. BBCCDD SSeemmiiccoonndduuccttoorr MMaannuuffaaccttuurriinngg LLiimmiitteedd ddooeess nnoott ccoonnvveeyy aannyy lliicceennssee uunnddeerr iittss ppaatteenntt rriigghhttss oorr ootthheerr rriigghhttss nnoorr tthhee rriigghhttss ooff ootthheerrss.. MMAAIINN SSIITTEE B- HCeDad Sqeumaritcerosnductor Manufacturing Limited - WaBfeCr FDa bSemiconductor Manufacturing Limited B- WCDa fSere mFaicbonductor Manufacturing Limited Shan-g hICai DSeIMsig-nB CGDro Suepmiconductor Manufacturing Co., Ltd. NShoa. n16g0h0a,i ZSiI MXi-nBgC RDo aSde,m Sihcaonngdhuaci tZoirZ Mhua Sncuifeanccteu-rbiansge dL Iinmdiutestdrial Park, 200241, China 800 YAi dSvhaannc Redoa Ad,n Sahloagn gChiaric 2u0it0s2 (3S3h, aCnhgihnaai) Corporation T8e0l0: ,+ Y8i6 S-2h1a-n2 R41o6a2d2, 6S6h,a Fnagxh:a +i 28060-2213-32,4 C1h6i2n2a77 Tel: +88F6, -Z21o-n6e4 B85, 910409,1 Y, iF Saxh:a n+ 8R6o-a2d1,- 5S4h5a0n g0h0a0i8 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE RShEeGnzIhOenN OAffLic eSALES OFFICE Taiwan Office USA Office SShhaennzghheani SOIfMfic-BeCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD TSaeimwiacno nOdfuficcteor (Taiwan) Company Limited UBSCAD OSeffmicieconductor Corp. SUhnaitn Agh Raoi oSmIM 1-2B0C3,D S kSyewmoicrtohn Bdludcgt.o, rG Maoaxninu fAavcteu.1r.iSn.g, NCaon.,s hLatnd .D Sihsterniczth, Senh eOnzffhiecne, 4F, 29B8C-1D, R Sueim Gicuoanngd uRcotoadr ,( NTaeiiw-Haun )D Cisotrmicpt,a Tnayi pLeiim, ited B30C9D20 S Hemunictwonodoud cAtovre .C Hoarypworaardti,on AChdivnaan ced Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwa4nF, 298-1, Rui Guang Road, Nei-Hu District, Taipei, 3C0A9 2904 5H4u4n,t UwSooAd Ave. Hayward, RTeolo: m+8 E6,- 755F5, -N8o8b2l6e 7C9e5n1ter, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, ChinTae l: +T8a8i6w-a2n-2656 2808 CTeAl :9 +4514-541, 0U-3.S2.4A-2988 TFealx:: ++8866--775555--88882266 77985615 Fax: +T8e8l:6 +-28-8266-526-2 2685066 2808 TFealx :: ++11--551100--332244--22978888 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 Fax: +1-510-324-2788

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: D iodes Incorporated: AP2111H-1.8TRG1 AP2111H-2.5TRG1 AP2111HA-3.3TRG1 AP2111H-3.3TRG1 AP2114UH-2.5TRG1 AP2111MP-1.2TRG1 AP2111H-4.8TRG1 AP2111MP-1.8TRG1 AP2111MP-2.5TRG1