AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary The AOT2610L & AOTF2610L uses trench MOSFET VDS 60V technology that is uniquely optimized to provide the most I (at V =10V) 55A / 35A D GS efficient high frequency switching performance. Both R (at V =10V) < 10.7mW DS(ON) GS conduction and switching power losses are minimized due R (at V =4.5V) < 13.5mW to an extremely low combination of R , Ciss and DS(ON) GS DS(ON) Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g Top View D TO-220 TO-220F G D S D S S AOT2610L G AOTF2610L G Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol AOT2610L AOTF2610L Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I 55 35 Current T =100°C D 39 25 A C Pulsed Drain Current C I 140 DM Continuous Drain TA=25°C I 9 A Current T =70°C DSM 7 A Avalanche Current C I 36 A AS Avalanche energy L=0.1mH C E 65 mJ AS T =25°C 75 31 C P W Power Dissipation B T =100°C D 37.5 15.5 C T =25°C 2.1 A P W Power Dissipation A T =70°C DSM 1.3 A Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol AOT2610L AOTF2610L Units Maximum Junction-to-Ambient A t ≤ 10s 15 15 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 60 60 °C/W Maximum Junction-to-Case Steady-State RqJC 2.0 4.8 °C/W Rev.1.0: March 2013 www.aosmd.com Page 1 of 7

AOT2610L/AOTF2610L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 60 V DSS D GS V =60V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V =±20V ±100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.4 2 2.5 V GS(th) DS GS，D I On state drain current V =10V, V =5V 140 A D(ON) GS DS V =10V, I =20A 8.7 10.7 GS D mW R Static Drain-Source On-Resistance T=125°C 15.7 18.9 DS(ON) J V =4.5V, I =20A 10.7 13.5 mW GS D g Forward Transconductance V =5V, I =20A 85 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.72 1 V SD S GS I Maximum Body-Diode Continuous Current 35 A S DYNAMIC PARAMETERS C Input Capacitance 2007 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 177 pF oss GS DS C Reverse Transfer Capacitance 12.5 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.2 1.8 W g GS DS SWITCHING PARAMETERS Qg(10V) Total Gate Charge 20.6 30 nC Qg(4.5V) Total Gate Charge V =10V, V =30V, I =20A 8.5 13 nC GS DS D Q Gate Source Charge 5 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 8.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==3300VV,, RR ==11..55WW ,, 33..55 nnss r GS DS L t Turn-Off DelayTime R =3W 27 ns D(off) GEN t Turn-Off Fall Time 3 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 19 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 69.5 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJAis the sum of the thermal impedance from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: March 2013 www.aosmd.com Page 2 of 7

AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V V =5V DS 4V 80 80 60 60 A) A) I(D 40 3.5V I(D 40 125°C 20 20 25°C V =3.0V 0 GS 0 0 1 2 3 4 5 1 2 3 4 5 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 14 2.4 2.2 e c 12 an 2 V =10V ) VGS=4.5V esist 1.8 IDG=S20A WWWWm R 17 (N) 10 On- 1.6 5 RDS(O alized 1.4 120 8 VGS=10V Norm 1.12 VIDG=S2=04A.5V 6 0.8 0 5 10 15 20 0 25 50 75 100 125 150 175 200 Figure 3: On-ResistanceID v(sA.) Drain Current and Gate Temperature (°C) 0 Voltage (Note E) Figure 4: On-Resistance vs. Junctio1n8 Temperature ((NNoottee EE)) 24 1.0E+02 I =20A D 1.0E+01 20 40 125°C 1.0E+00 WWWWm) 16 A) 1.0E-01 125°C (DS(ON) 12 I(S 1.0E-02 R 1.0E-03 25°C 8 25°C 1.0E-04 4 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5: On-ResistVanGSce(V vosl.t sG)ate-Source Voltage Figure 6: Body-DioVdSDe (CVhoaltrsa)cteristics (Note E) (Note E) Rev.1.0: March 2013 www.aosmd.com Page 3 of 7

AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2400 VID=S2=03A0V Ciss D 2000 8 F) 1600 p V(Volts)GS 46 pacitance ( 1200 Coss a 800 C 2 400 C rss 0 0 0 5 10 15 20 25 0 10 20 30 40 50 60 Qg(nC) VDS(Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 500 T =175°C J(Max) T =25°C 100.0 1100mmss 400 C R s) 10.0 limDSit(eOdN) 100m s W) 300 17 I(AmpD 1.0 DC 11m0mss Power ( 200 52 10 T =175°C 0.1 TJ(=M2ax5)°C 100 C 0.0 0 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 V (Volts) 0 DS Pulse Width (s) V > or equal to 4.5V 18 GS Figure 10: Single Pulse Power Rating Junction-to-Case FFiigguurree 99:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd SSaaffee OOppeerraattiinngg for AOT2610L (Note F) Area for AOT2610L (Note F) 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e Transistance 1 RqJC=2.0°C/W 40 d si ee zR malimal Norher 0.1 PD CT J Single Pulse Zqqqq T on T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2610L (Note F) Rev.1.0: March 2013 www.aosmd.com Page 4 of 7

AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.0 500 T =175°C J(Max) T =25°C 100.0 10m s 400 C RDS(ON) 100m s s) 10.0 W) 300 (AmpD 1.0 11m0mss ower ( 200 1.6 2.15 I DC P T =175°C J(Max) 0.1 TC=25°C 100 0.0 0 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 V (Volts) DS Pulse Width (s) 17 VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Jun5ction-to-Case Figure 9: Maximum Forward Biased Safe for AOTF2610L (Note F) 2 Operating Area for AOTF2610L (Note F) 10 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince RqJC=4.8°C/W d Trasista 1 0 zeRe 18 malimal NorJCTher 0.1 PD Zqqqq Single Pulse T on T 0.01 40 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 PPuullssee WWiiddtthh ((ss)) Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2610L (Note F) Rev.1.0: March 2013 www.aosmd.com Page 5 of 7

AOT2610L/AOTF2610L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 80 nt e he Curr 100 TA=25°C TA=100°C on (W) 60 alanc TA=150°C sipati 40 v s A) Peak A 10 TA=125°C Power Di 20 (R A I 1 0 1 10 100 1000 0 25 50 75 100 125 150 175 Time in avalanche, t m(mmm s) T (°°°°C) A CASE Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F) (Note C) 60 1000 T =25°C A 50 A) (D 40 100 g I W) urrent ratin 2300 Power (10 C 10 0 1 0 25 50 75 100 125 150 175 T (°°°°C) 0.001 0.1 10 1000 CASE FFiigguurree 1144:: CCuurrrreenntt DDee--rraattiinngg ((NNoottee FF)) PPuullssee WWiiddtthh ((ss)) Figure 15: Single Pulse Power Rating Junction- to-Ambient (Note H) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince 1 RqJA=60°C/W 40 Trasta d si ee malizmal R 0.1 Norher PD AT 0.01 J Zqqqq Single Pulse T on T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: March 2013 www.aosmd.com Page 6 of 7

AOT2610L/AOTF2610L Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds ++ Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev.1.0: March 2013 www.aosmd.com Page 7 of 7