AOT9N50/AOTF9N50 500V, 9A N-Channel MOSFET General Description Product Summary The AOT9N50 & AOTF9N50 have been fabricated using VDS 600V@150℃ an advanced high voltage MOSFET process that is I (at V =10V) 9A D GS designed to deliver high levels of performance and R (at V =10V) < 0.85W robustness in popular AC-DC applications. DS(ON) GS By providing low R , C and C along with DS(on) iss rss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add "L" suffix to part number: AOT9N50L & AOTF9N50L TO-220 Top View TO-220F D G G G D D S S S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol AOT9N50 AOTF9N50 Units Drain-Source Voltage V 500 V DS Gate-Source Voltage V ±30 V GS Continuous Drain TC=25°C I 9 9* Current T =100°C D 6.0 6* A C Pulsed Drain Current C I 30 DM Avalanche Current C I 3.2 A AR Repetitive avalanche energy C E 154 mJ AR Single plused avalanche energy G E 307 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25°C 192 38.5 W C P Power Dissipation B Derate above 25oC D 1.5 0.3 W/ oC Junction and Storage Temperature Range T, T -55 to 150 °C J STG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Symbol AOT9N50 AOTF9N50 Units Maximum Junction-to-Ambient A,D RqJA 65 65 °C/W Maximum Case-to-sink A RqCS 0.5 -- °C/W Maximum Junction-to-Case RqJC 0.65 3.25 °C/W * Drain current limited by maximum junction temperature. Rev3: July 2010 www.aosmd.com Page 1 of 6

AOT9N50/AOTF9N50 Electrical Characteristics (T=25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250µA, V =0V, T=25°C 500 BV Drain-Source Breakdown Voltage D GS J DSS I =250µA, V =0V, T=150°C 600 V D GS J BV Breakdown Voltage Temperature /∆TDJSS Coefficient ID=250µA, VGS=0V 0.56 V/ oC V =500V, V =0V 1 IDSS Zero Gate Voltage Drain Current VDS=400V, TG=S125°C 10 m A DS J I Gate-Body leakage current V =0V, V =±30V ±100 nA GSS DS GS V Gate Threshold Voltage V =5V I =250m A 3.4 4 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =4.5A 0.66 0.85 W DS(ON) GS D g Forward Transconductance V =40V, I =4.5A 10 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V SD S GS I Maximum Body-Diode Continuous Current 9 A S I Maximum Body-Diode Pulsed Current 30 A SM DYNAMIC PARAMETERS C Input Capacitance 694 868 1042 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 74 93 112 pF oss GS DS C Reverse Transfer Capacitance 6.2 7.8 9.4 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2 4 6 W g GS DS SWITCHING PARAMETERS Q Total Gate Charge 15 23.6 28 nC g Q Gate Source Charge V =10V, V =400V, I =9A 4 5.2 6.2 nC gs GS DS D Q Gate Drain Charge 8.5 10.6 12.7 nC gd t Turn-On DelayTime 19.5 ns D(on) t Turn-On Rise Time V =10V, V =250V, I =9A, 47 ns r GS DS D tD(off) Turn-Off DelayTime RG=25W 51.5 ns t Turn-Off Fall Time 38.5 ns f trr Body Diode Reverse Recovery Time IF=9A,dI/dt=100A/m s,VDS=100V 195 248 300 ns Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/m s,VDS=100V 2.5 3.5 4.5 m C A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P is based on T =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150°C, Ratings are based on low frequency and duty cycles to keep initial T J(MAX) J =25°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =3.2A, V =150V, R =25Ω, Starting T=25°C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3: July 2010 www.aosmd.com Page 2 of 6

AOT9N50/AOTF9N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 18 100 10V -55°C V =40V 15 DS 6.5V 12 10 6V I (A)D 9 I(A)D 125°C 6 1 V =5.5V GS 25°C 3 0 0.1 0 5 10 15 20 25 30 2 4 6 8 10 VDS (Volts) VGS(Volts) Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics 2.0 3 e 2.5 V =10V 1.5 stanc 2 IDG=S4.5A ) si WR (DS(ON) 1.0 d On-Re 1.5 e z 0.5 VGS=10V mali 1 or N 0.5 0.0 0 4 8 12 16 20 0 -100 -50 0 50 100 150 200 I (A) D Temperature (°C) Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature Voltage 1.2 1.0E+02 1.0E+01 d) 1.1 1.0E+4000 e z 125°C mali A) 1.0E-01 Nor 1 I (S 1.0E-02 25°C V (DSS 1.0E-03 B 0.9 1.0E-04 1.0E-05 0.8 0.0 0.2 0.4 0.6 0.8 1.0 -100 -50 0 50 100 150 200 V (Volts) T (°C) SD J Figure 6: Body-Diode Characteristics (Note E) Figure 5:Break Down vs. Junction Temperature Rev3: July 2010 www.aosmd.com Page 3 of 6

AOT9N50/AOTF9N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 VDS=400V Ciss I =9A 12 D 1000 F) p C olts) 9 nce ( oss V a 100 (S cit VG 6 pa a C 10 3 C rss 0 1 0 5 10 15 20 25 30 35 0.1 1 10 100 Qg (nC) VDS (Volts) Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100 100 10m s 10 RDS(ON) 10 RDS(ON) 10m s limited limited mps) 1 11m00sm s mps) 1 11m00sm s A A I (D 10ms I (D 10ms DC DC 0.1s 0.1 TJ(Max)=150°C 0.1 TJ(Max)=150°C 1s TC=25°C TC=25°C 0.01 0.01 1 10 100 1000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Figure 10: Maximum Forward Biased Safe Operating Operating Area for AOT9N50 (Note F) Area for AOTF9N50 (Note F) 10 8 A) (D g I 6 n ati nt r 4 e urr C 2 0 0 25 50 75 100 125 150 T (°C) CASE Figure 11: Current De-rating (Note B) Rev3: July 2010 www.aosmd.com Page 4 of 6

AOT9N50/AOTF9N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D=T /T on In descending order ent TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsi nce 1 RqJC=0.65°C/W Tra sta d si e e maliz mal R 0.1 PD NorJCTher0.01 Ton T Zq Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT9N50 (Note F) 10 D=T /T In descending order on ent TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse nsi nce 1 RqJC=3.25°C/W Tra sta d si e e z R 0.1 mali mal PD Nor her CT 0.01 T J on Zq T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF9N50 (Note F) Rev3: July 2010 www.aosmd.com Page 5 of 6

AOT9N50/AOTF9N50 Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds E A R= 1/2 LI AR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I t Isd F dI/dt rr + I Vgs VDC Vdd RM Vdd - Vds Ig Rev3: July 2010 www.aosmd.com Page 6 of 6