AOT412/AOB412L 100V N-Channel MOSFET SDMOSTM General Description Product Summary The AOT412 & AOB412L are fabricated with SDMOSTM VDS 100V trench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60A low gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V) < 15.8mW efficiency with controlled switching behavior. This R (at V = 7V) < 19.4mW universal technology is well suited for PWM, load DS(ON) GS switching and general purpose applications. 100% UIS Tested 100% R Tested g TO-263 TO220 Top View Bottom View Top View D2PAK Bottom View D D D D D G AGOT4D12S S DG G SAOB412L S G S Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 100 V DS Gate-Source Voltage V ±25 V GS Continuous Drain TC=25°C I 60 Current T =100°C D 44 A C Pulsed Drain Current C I 140 DM Continuous Drain TA=25°C I 8.2 A Current T =70°C DSM 6.6 A Avalanche Current C I ,I 47 A AS AR Avalanche energy L=0.1mH C E ,E 110 mJ AS AR T =25°C 150 C P W Power Dissipation B T =100°C D 75 C T =25°C 2.6 A P W Power Dissipation A T =70°C DSM 1.7 A Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 15 18 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 40 48 °C/W Maximum Junction-to-Case Steady-State RqJC 0.7 1 °C/W Rev2: Jul 2011 www.aosmd.com Page 1 of 7

AOT412/AOB412L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 100 V DSS D GS V =100V, V =0V 10 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 50 J I Gate-Body leakage current V =0V, V = ±25V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 2.6 3.2 3.8 V GS(th) DS GS ,D I On state drain current V =10V, V =5V 140 A D(ON) GS DS V =10V, I =20A 13.2 15.8 GS D mW TO220 T=125°C 25 30 J V =7V, I =20A GS D TO220 15.5 19.4 mW R Static Drain-Source On-Resistance DS(ON) V =10V, I =20A GS D mW TO263 12.9 15.5 V =7V, I =20A GS D TO263 15.2 19.1 mW g Forward Transconductance V =5V, I =20A 30 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.65 1 V SD S GS I Maximum Body-Diode Continuous Current 60 A S DYNAMIC PARAMETERS C Input Capacitance 2150 2680 3220 pF iss C Output Capacitance V =0V, V =50V, f=1MHz 180 260 340 pF oss GS DS C Reverse Transfer Capacitance 60 100 140 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1 1.5 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 36 45 54 nC g Q Gate Source Charge V =10V, V =50V, I =20A 14 17 20 nC gs GS DS D Q Gate Drain Charge 9 15 21 nC gd t Turn-On DelayTime 19 ns D(on) t Turn-On Rise Time V =10V, V =50V, R =2W , 16 ns r GS DS L t Turn-Off DelayTime R =3W 27 ns D(off) GEN t Turn-Off Fall Time 10 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 15 22 29 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 67 96 125 nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2: Jul 2011 www.aosmd.com Page 2 of 7

AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 10V VDS=5V 120 7.5V 7V 80 100 80 6.5V 60 A) A) I (D 60 I(D 40 6V 40 20 125°C 25°C V =5.5V 20 GS 0 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS (Volts) VGS(Volts) Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 17 2.6 2.4 16 VGS=7V ance 2.2 VGS=10V ) 15 sist 2 ID=20A e WWWW (mDS(ON) 14 VGS=10V ed On-R 11..68 1752 R 13 maliz 11..24 VGS=7V10 12 Nor 1 ID=20A 11 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 ID (A) Temperature (°C) 0 Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Te1m8perature Voltage (Note E) (Note E) 33 1.0E+02 I =20A D 1.0E+01 28 40 1.0E+00 125°C WWWWm) 23 125°C A) 25°C (N) I (S 1.0E-01 O RDS( 18 25°C 1.0E-02 13 1.0E-03 1.0E-04 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 5 6 7 8 9 10 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E) (Note E) Rev2: Jul 2011 www.aosmd.com Page 3 of 7

AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3600 V =50V DS 3200 I =20A 8 D 2800 Ciss F) 2400 p olts) 6 nce ( 2000 V a V (GS 4 pacit 1600 a 1200 C 800 2 Coss Crss 400 0 0 0 10 20 30 40 50 0 20 40 60 80 100 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 5000 100.0 10m s10m s 4000 TJ(Max)=175°C RDS(ON) 100m s TC=25°C I (Amps)D 110..00 limited DC 110mmss Power (W) 23000000 1752 10 0.1 TJ(Max)=175°C 1000 T =25°C C 0.0 0 0.01 0.1 1 10 100 1000 1E-05 0.0001 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) 18 Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- Operating Area (Note F) Case (Note F) 10 D=Ton/T In descending order nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsi nce RqJC=1°C/W 40 Tra sta 1 d si e e z R mali mal Nor her 0.1 PD CT J Zqqqq Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev2: Jul 2011 www.aosmd.com Page 4 of 7

AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 160 nt TA=25°C 140 e urr TA=100°C W)120 eak Avalanche C 110 TA=150°C TA=125°C wer Dissipation (1680000 P o 40 A) P (R 20 A I 0 0.1 0 25 50 75 100 125 150 175 1 10 100 1000 Time in avalanche, tA m(mmm s) TCASE (°C) Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F) C) 70 1000 60 T =25°C A A) 50 (D 100 ng I 40 W) 17 nt rati 30 ower ( 52 e P urr 20 10 10 C 10 0 1 0 25 50 75 100 125 150 175 0.00001 0.001 0.1 10 1000 0 TCASE (°C) Pulse Width (s) Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating J1un8ction-to- Ambient (Note G) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsi nce 1 RqJA=48°C/W 40 Tra sta d si e e z R 0.1 mali mal NorATher 0.01 PD J Zqqqq Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev2: Jul 2011 www.aosmd.com Page 5 of 7

AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 220 50 30 2 di/dt=800A/m s 125ºC di/dt=800A/m s 125ºC 25 180 40 1.5 20 Q (nC)rr 110400 Q 25ºC 2300 I (A)rm t (ns)rr 15 trr 25ºC 1 S rr 125ºC 10 25ºC S 0.5 60 I 10 rm 5 25ºC 125ºC 20 0 0 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 IS (A) IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Figure 18: Diode Reverse Recovery Time and Current vs. Conduction Current Softness Factor vs. Conduction Current 180 50 35 2 160 Is=20A 125ºC 30 125ºC Is=20A 40 140 1.5 25 Q (nC)rr 11802000 Q 25ºC 2300 I(A)rm t (ns)rr1250 25ºC trr 1 S rr 60 125ºC 10 25ºC S 0.5 10 40 Irm 25ºC 5 125ºC 20 0 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 di/dt (Am/mmm s) di/dt (Am/mmm s) Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and Peak Current vs. di/dt Softness Factor vs. di/dt Rev2: Jul 2011 www.aosmd.com Page 6 of 7

AOT412/AOB412L Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds + Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev2: Jul 2011 www.aosmd.com Page 7 of 7