AOT262L/AOB262L 60V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology VDS 60V • Low RDS(ON) ID (at VGS=10V) 140A • Low Gate Charge R (at V =10V) < 3.0mW (< 2.8mW *) DS(ON) GS • Optimized for fast-switching applications R (at V = 6V) < 3.2mW (< 3.0mW *) DS(ON) GS Applications 100% UIS Tested 100% R Tested g • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO-220 TO-263 D2PAK D Top View Bottom View Top View Bottom View D D D D G S G S G G D S D G S S Orderable Part Number Package Type Form Minimum Order Quantity AOT262L TO-220 Tube 1000 AOB262L TO-263 Tape & Reel 800 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V ±20 V GS Continuous Drain TC=25°C I 140 Current G T =100°C D 110 A C Pulsed Drain Current C I 500 DM Continuous Drain TA=25°C I 20 A Current T =70°C DSM 16 A Avalanche Current C I , I 115 A AS AR Avalanche energy L=0.1mH C E , E 661 mJ AS AR V Spike 10µs V 72 V DS SPIKE Peak diode recovery dv/dt dv/dt 8 V/ns T =25°C 333 C P W Power Dissipation B T =100°C D 167 C T =25°C 2.1 A P W Power Dissipation A T =70°C DSM 1.3 A Junction and Storage Temperature Range T, T -55 to 175 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 12 15 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 48 60 °C/W Maximum Junction-to-Case Steady-State RqJC 0.35 0.45 °C/W * Surface mount package TO263 Rev.1.0 : August 2014 www.aosmd.com Page 1 of 6

Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 60 V DSS D GS V =60V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250m A 2.2 2.7 3.2 V GS(th) DS GS D I On state drain current V =10V, V =5V 500 A D(ON) GS DS V =10V, I =20A 2.2 3.0 GS D TO220 T=125°C 3.6 J V =6V, I =20A GS D TO220 2.5 3.2 R Static Drain-Source On-Resistance mW DS(ON) V =10V, I =20A GS D TO263 2.0 2.8 V =6V, I =20A GS D TO263 2.3 3.0 g Forward Transconductance V =5V, I =20A 80 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.65 1 V SD S GS I Maximum Body-Diode Continuous Current G 140 A S DYNAMIC PARAMETERS C Input Capacitance 6500 8140 9800 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 830 1040 1350 pF oss GS DS C Reverse Transfer Capacitance 25 32 55 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1 1.5 W g GS DS SWITCHING PARAMETERS QQg(10V) TToottaall GGaattee CChhaarrggee 7755 9955 111155 nnCC Q Gate Source Charge V =10V, V =30V, I =20A 30 nC gs GS DS D Q Gate Drain Charge 5 nC gd t Turn-On DelayTime 27 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =1.5W , 22 ns r GS DS L t Turn-Off DelayTime R =3W 47 ns D(off) GEN t Turn-Off Fall Time 8 ns f trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/m s 21 30 39 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/m s 130 185 240 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSMis based on R qJAand the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25°C. J D. The RqJAis the sum of the thermal impedence from junction to case RqJCand case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0 : August 2014 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V V =5V DS 80 6V 80 10V 60 60 A) A) I(D 40 4V I(D 40 125°C 20 20 25°C V =3.5V GS 0 0 0 1 2 3 4 5 1 2 3 4 5 6 Fig 1: On-RegioVnD CSh(Vaoraltcst)eristics (Note E) Figure 2: TransfeVrG CS(hVaorlatsc)teristics (Note E) 6 2.2 e 2 ) 4 esistanc 1.8 VIDG=S2=01A0V W(mN) VGS=6V On-R 1.6 175 RDS(O 2 alized 11..24 VGS=6V120 VGS=10V orm ID=20A N 1 0 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200 Figure 3: On-ResistanceID v(sA.) Drain Current and Gate Temperature (°C) 0 Voltage (Note E) Figure 4: On-Resistance vs. Junctio1n 8Temperature ((NNoottee EE)) 8 1.0E+02 I =20A D 1.0E+01 6 1.0E+4000 125°C ) 125°C A) 1.0E-01 Wm ( (N) 4 IS 1.0E-02 25°C O RDS( 1.0E-03 2 1.0E-04 25°C 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage VSD(Volts) (Note E) Figure 6: Body-Diode Characteristics (Note E) Rev.1.0 : August 2014 www.aosmd.com Page 3 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 V =30V DS I =20A D 8 8000 C iss F) p V(Volts)GS 46 pacitance ( 46000000 a C 2 2000 C oss C rss 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 Q (nC) V (Volts) g DS Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000.0 600 10m s T =175°C J(Max) T =25°C 100.0 RDS(ON) 10m1s00m s C limited 500 1ms Amps) 10.0 DC 10ms er (W) 400 175 I(D 1.0 TJ(Max)=175°C Pow 2 T =25°C 10 C 300 0.1 0.0 200 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 V (Volts) 0 DS Pulse Width (s) 18 FFiigguurree 99:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd SSaaffee Figure 10: Single Pulse Power Rating Junction-to-Case Operating Area (Note F) (Note F) 10 D=T /T In descending order on nt TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince RqJC=0.45°C/W 40 Trasta 1 d si ee zR malimal PD Norher 0.1 CT T ZqJ Single Pulse on T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0 : August 2014 www.aosmd.com Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 400 nt e Curr W) 300 k Avalanche 100 TTAA==2155°0°CC TA=100°C Dissipation ( 200 ea er P T =125°C w A) A Po 100 (R A I 10 0 1 10 100 1000 0 25 50 75 100 125 150 175 Time in avalanche, tA(m s) TCASE(°C) Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F) C) 150 1000 T =25°C A 120 A) g I(D 90 W) 100 17 ent ratin 60 Power ( 10 1520 urr C 30 1 0 0.001 0.1 10 1000 0 25 50 75 100 125 150 175 0 TCASE(°C) Pulse Width (s) 18 FFiigguurree 1144:: CCuurrrreenntt DDee--rraattiinngg ((NNoottee FF)) FFiigguurree 1155:: SSiinnggllee PPuullssee PPoowweerr RRaattiinngg JJuunnccttiioonn--ttoo-- Ambient (Note H) 10 D=Ton/T In descending order nt TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e nsince 1 RqJA=60°C/W 40 Trasta d si ee zR 0.1 malimal P NorATher 0.01 D ZqJ Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0 : August 2014 www.aosmd.com Page 5 of 6

Gate Charge Test Circuit & Waveform Vgs Qg + 10V + VDC Qgs Qgd - Vds VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vgs DUT Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) tf ton toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 Vds EA R = 1/2 LIAR BVDSS Id Vds ++ Vgs Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev.1.0 : August 2014 www.aosmd.com Page 6 of 6